Radiation Effects Characterization Research Articles

Equivalent small-signal model of InP-based HEMTs with accurate radiation effects characterization

In this paper, an effective equivalent modeling technique has been proposed to describe small-signal characteristics of InP-based high electron mobility transistors (HEMTs) after proton radiation, which is composed of an artificial neural network and equivalent-circuit models. Small-signal intrinsic parameters of InP-based HEMTs are extracted from S-parameters before and after 2 MeV proton radiation as modeling objects. The deep learning model of a generative adversarial network has been explored to expand the measured finite data samples. Four feedforward neural networks are incorporated to equivalent-circuit topology to form the equivalent model, which are trained to accurately predict the radiation-induced variations of Cgs, Cgd, Rds, and gm, respectively. The prediction accuracy of the developed equivalent model has been well verified in terms of the broad-band S-parameters under radiation fluence of 1 × 1014 and 5 × 1013 H+/cm2. This equivalent modeling method with characterization of radiation damage effects could provide significant guidance for the aerospace monolithic millimeter-wave integrated circuit design.

Radiation effect characterization and test methods of single-chip and multi-chip stacked 16 Mbit DRAMs

This paper presents radiation effects characterization performed by the NASA Goddard Space Flight Center (GSFC) on spaceflight candidate 16 Mbit DRAMs. This includes heavy ion, proton, and Co/sup 60/ irradiations on single-chip devices as well as proton irradiation of a stacked DRAM module. Lastly, a discussion of test methodology is undertaken.

Characterization of radiation effects on trench-isolated bipolar analog microcircuit technology

Radiation effects on trench-isolated bipolar analog microcircuits have been characterized through measurement of neutron damage, long-term ionizing radiation damage, transient photoresponse, and pulsed radiation-induced latchup. The characterization was done to provide basic information on the hardness of the technology for potential system application. The principal means of evaluation was through characterization of process-control and custom test chips. Results of the test chip characterization were compared to radiation effects characterization of basic microcircuits of identical process technologies. The goal of the characterization was to determine if there were any surprises in the radiation susceptibility. None was found in the displacement damage, transient photoresponse, or radiation-induced latchup. Displacement damage effects are determined by transistor gain degradation. Transient photoresponse is dominated by the substrate photocurrent. The presence of deep trenches does not prevent latchup but latchup can be mitigated by the process doping profile. There were some questions remaining associated with the long-term ionization radiation damage. Test chip data were not completely consistent and some further investigation is necessary.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

Radiation characterization of the ADSP2100A digital signal processor

A comprehensive radiation effects characterization of the Analog Devices ADSP2100A digital signal processor for the space environment has been completed using Californium fission fragments, laser light, heavy ions and protons. Results of these investigations led to the design of a latchup immune device that has been characterized with respect to SEU and total dose effects, as well as a thoroughly tested latchup protection and fault tolerant circuit. >

Radiation effects characterization of infrared focal plane arrays using the Mosaic Array Test System

The Mosaic Array Test System (MATS) has been developed to perform radiation effects characterization of single-element infrared detectors, readout devices, and infrared flocal plane arrays (IRFPAs). MATS has been used to perform radiation effects characterization of low background IRFPAs in various radiation environments. We describe the components and capabilities of the MATS and present representative data to demonstrate the testing capabilities of the MATS.

Radiation Effects Characterization of the SBP9900A 16-Bit Microprocessor

Characterization of the Texas Instruments SBP9900A 16-bit microprocessor has been performed in radiation environments. The test results indicate that the devices will remain functional at reduced electrical performance following exposures to ionizing radiation levels of 3×106rads(Si) or neutron fluences of 3×1013n/cm2. Transient logic upset was not observed at ionizing radiation dose rates of less than 1×109rads(Si)/sec. The primary failure mode in the neutron and total ionizing dose environments was found to be a reduction in up-gain of the npn portion of the I2L cell. Methods of enhancing the radiation hardness of the SBP9900A are discussed.