Quaternary Films Research Articles

Multi-Component Lithiophilic Alloy Film Modified Cu Current Collector for Long-Life Lithium Metal Batteries by a Novel FCVA Co-Deposition System.

Surface modification of Cu current collectors (CCs) is proven to be an effective method for protecting lithium metal anodes. However, few studies have focused on the quality and efficiency of modification layers. Herein, a novel home-made filtered cathode vacuum arc (FCVA) co-deposition system with high modification efficiency, good repeatability and environmental friendliness is proposed to realize the wide range regulation of film composition, structure and performance. Through this system, ZnMgTiAl quaternary alloy films, which have good affinity with Li are successfully constructed on Cu CCs, and the fully enhanced electrochemical performances are achieved. Symmetrical cells constructed with modified CCs maintained a fairly low voltage hysteresis of only 13mV after 2100h at a current density of 1mA cm-2. In addition, the capacity retention rate is as high as 75.0% after 100 cycles in the full cells. The influence of alloy films on the dynamic evolution process of constructing stable artificial solid electrolyte interphase (SEI) layer is revealed by in situ infrared (IR) spectroscopy. This work provides a promising route for designing various feasible modification films for LMBs, and it displays better industrial application prospects than the traditional chemical methods owing to the remarkable controllability and scale-up capacity.

Optimization of photocurrent and surface wettability of new As10Bi30Se30Te30 thin films through annealing at different temperatures for optoelectronic applications

Group V-VI-based metal-doped double chalcogenides are essential in thermoelectric and suitable optoelectronic devices. The present investigation is based on optimising various optical, structural, and electrical behaviours of quaternary As10Bi30Se30Te30 films through thermal annealing at different temperature scales. The structural study by X-ray diffraction (XRD) exhibited the presence of various Bi2Se3, Bi2SeTe2, and Bi2Te3 phases in the annealed films. The crystallinity gradually enhanced after the annealing process. The microstructural modifications in the material have been confirmed through the Raman spectra. The elemental confirmation was verified from the energy dispersive X-ray (EDX) spectra, whereas the cross-sectional scanning electron microscopy (SEM) view showed the annealing-induced modifications in the films. The granular structure in the films is seen from the surface morphology study. The reduction of the energy gap from 1.36 ± 0.002 eV to 1.26 ± 0.001 eV upon annealing induced the increment in refractive index from 3.08 to 3.15. With annealing, the non-linear refractive index varied from 4.341x10−10 esu to 5.218 x10−10 esu. This indicates the narrowing of the bandgap and enhancement in the non-linear optical response of the material after the annealing process. The 3rd-order nonlinear susceptibility is also increased by annealing, thus making it suitable for nonlinear device applications. Annealing-induced surface change in the material enhances its surface wettability and makes it more hydrophilic. The linear enhancement in photocurrent with the voltage is ohmic and makes it suitable for various optoelectronic applications.

Quaternary ammonium chitosan-based active packaging films incorporated with dialdehyde guar gum-proanthocyanidins conjugates: Characterization and application in the edible coating of pork

In this study, antioxidant and antibacterial proanthocyanidins (PA) were covalently conjugated with dialdehyde guar gum (DGG) to produce DGG-PA conjugates. Then DGG-PA conjugates were incorporated into quaternary ammonium chitosan (QAC)-based matrix to create QAC/DGG-PA films. The structure, physicochemical properties, and antioxidant and antibacterial effects of DGG-PA conjugates and QAC/DGG-PA films were analyzed. The active packaging potentials of QAC/DGG-PA film-forming solutions in the edible coating of pork loins were evaluated. Results showed DGG-PA conjugates had unique UV absorption peak (280 nm), infrared bands (1610 and 1521 cm−1) and proton nuclear magnetic resonance signals (6.82 ppm) of PA groups. DGG-PA conjugates showed amorphous state with sheet-like and fibrous morphology. DGG-PA conjugates had good biocompatibility and antioxidant and antibacterial effects. After adding DGG-PA conjugates, the surface of QAC-based films became smooth and the crystallographic nature of the films declined. DGG-PA conjugates elevated the light/water vapor/oxygen barrier performances, mechanical properties, and antioxidant and antibacterial effects of QAC-based films. QAC/DGG-PA edible coatings effectively prolonged the shelf life of pork loins from 4 days to 6−10 days. Results verified QAC/DGG-PA films and their film-forming solutions had good application potentials in active packaging.

Phase formation, structure and properties of quaternary MAX phase thin films in the Cr-V-C-Al system: A combinatorial study

Tailoring of individual atomic layers via alloying to synthesize quaternary MAX phases allows for expanding their chemical diversity and fine-tuning of their properties. In this study, Cr-V/C/Al multilayered precursors were deposited via combinatorial magnetron sputtering, creating nanostructured architectures with periodic stacking of nanolayers and varying Cr:V ratios. Their phase transformation and underlying reaction mechanisms during subsequent thermal annealing in argon towards the prospective quaternary solid solution (CrV)n+1AlCn MAX phases formation was systematically studied. Crystallization of (CrV)2AlC starts at approximately 500°C, while growth of higher-ordered (CrV)4AlC3 is observed from 960°C. Notably, intergrowth of (CrV)2AlC and (CrV)4AlC3 structures with coherent interface suggests that (CrV)2AlC acts as template for nucleation of (CrV)4AlC3. Thermal stability and high-temperature oxidation tests found that (CrV)2AlC exhibits higher thermal stability compared to (CrV)4AlC3 and films with Cr72.7V27.3 displayed good oxidation resistance at 1000°C, forming a protective bilayer oxide scale consisting of (Cr,Al)2O3 and Al2O3.

Effect of growth conditions on magnetization reversal and magnetic anisotropy in Co2Fe0.5Ti0.5Si quaternary Heusler alloy thin films

Ferromagnetic resonance and magneto-optic Kerr effect (MOKE) techniques are employed to unravel the nature of ‘in-plane’ (IP) magnetic anisotropy and magnetization reversal (MR) processes in magnetron-sputtered 100 nm Co2Fe0.5Ti0.5Si (CFTS) thin films, deposited (and subsequently annealed) at different substrate temperatures (Ts) ranging from 200 °C to 550 °C. By varying TS, the CFTS films are produced with different amounts of anti-site (AS) atomic disorder. Irrespective of the degree of AS disorder, the IP uniaxial magnetic anisotropy (UMA) is prevalent in all the CFTS films. The TS450 and TS500 films, deposited at T S = 450 °C and 500 °C, stand out as they have (i) the least AS disorder, (ii) lowest value (α = 0.0055) of the Gilbert damping constant, (iii) high saturation magnetization ( ≅770 G ) at 300 K, (iv) UMA energy density as high as ≅1.6×104erg/cc at 120 K dropping to ≅1.0×104erg/cc at 300 K, (v) spin-wave stiffness ( D ) at T = 0 K, D0≅175 meVÅ2 and, as in other CFTS films, the electron–magnon interaction is primarily responsible for the thermal renormalization of D . Furthermore, in the TS450 and TS500 films, MOKE hysteresis loops at various angles ( ψH ) that the field makes with the easy axis in the film plane, reveals two mutually exclusive UMAs, UMA1≫UMA2 , with easy axes perpendicular to each other. By contrast, only a single UMA is observed in all the remaining films. When ψH=0∘ , MOKE domain images reveal that, consistent with the uniaxial nature of magnetic anisotropy, an abrupt reversal of magnetization is accompanied by the formation of 180° domains. When ψH = 90°, due to the presence of two UMAs in TS450 and TS500 films, following the field reversal, first the reverse domains nucleate and then grow at the expense of the fundamental domains through field-induced domain wall motion.

Growth mechanism and the properties of CIGS thin films for zero bias photodetector devices

CuInGaSe2 quaternary thin films have been deposited using a single-source, single-step thermal evaporation technique using hydrothermally fabricated CIGS powder. Highly crystalline, homogeneous, and stoichiometric CIGS powder source was prepared by a hydrothermal method and then evaporated at substrate temperatures of room temperature, 150°C, and 300°C. The bulk and surface structural, morphological, and optical properties of the samples were analyzed. The sample deposited at room temperature did not show any phase formation; however, increasing the substrate temperature resulted in the formation of binary and quaternary phases due to interdiffusion of the species. XPS and Raman spectra analysis revealed nanocrystalline Cu2Se phase formation at the interface, while the bulk of the sample remained single-phase CIGS. A higher deposition temperature also facilitated larger grain size and a more compact surface morphology. Increasing the substrate temperature increased the likelihood of interdiffusion of the species from the evaporation flux and controlled the bulk and surface properties of the samples. CIGS/CdS active photodetectors were fabricated by deposition of a CdS buffer layer, with the sample deposited at 150°C showing the highest photocurrent along with low response and recovery times at 0 V bias.

Study on Bulk-Surface Transport Separation and Dielectric Polarization of Topological Insulator Bi1.2Sb0.8Te0.4Se2.6.

This study successfully fabricated the quaternary topological insulator thin films of Bi1.2Sb0.8Te0.4Se2.6 (BSTS) with a thickness of 25 nm, improving the intrinsic defects in binary topological materials through doping methods and achieving the separation of transport characteristics between the bulk and surface of topological insulator materials by utilizing a comprehensive Physical Properties Measurement System (PPMS) and Terahertz Time-Domain Spectroscopy (THz-TDS) to extract electronic transport information for both bulk and surface states. Additionally, the dielectric polarization behavior of BSTS in the low-frequency (10-107 Hz) and high-frequency (0.5-2.0 THz) ranges was investigated. These research findings provide crucial experimental groundwork and theoretical guidance for the development of novel low-energy electronic devices, spintronic devices, and quantum computing technology based on topological insulators.

In vitro cytotoxicity and wound healing activities of quaternary blended carboxymethyl cellulose-hydroxypropyl methylcellulose composite film

In vitro cytotoxicity and wound healing activities of quaternary blended carboxymethyl cellulose-hydroxypropyl methylcellulose composite film

Ionic liquid-assisted preparation of Ag–Zn–In–S quaternary quantum dot thin films and luminescence performance optimized by machine learning

Machine learning-assisted synthesis of new materials has been an ongoing hot topic. Luminescent Ag–Zn–In–S quaternary semiconductor quantum dot thin films have great application potential in many fields because of their excellent photoelectric performance. In this study, an environmentally friendly ionic liquid-assisted approach was employed to prepare high-performance Ag–Zn–In–S luminescent thin films, and machine learning methods were applied to screen the optimal preparation conditions. The photoluminescence (PL) performance, crystal structure, and morphology of the thin films were also been studied. The initial data set was obtained by high-throughput experiments. By comparing machine learning algorithms of Xgboost, Random Forest, Bagging, SVM, Extra Tree, and Gradient Boosting, the Random Forest achieved the best accuracy (r = 0.84, R2 = 0.847) and was selected to predict the optimal preparation conditions of Ag–Zn–In–S quaternary quantum dot thin films. The machine learning predicted results are in great agreement with the subsequent experimental results, which verifies the accuracy and effectiveness of the machine learning model. This study offers a theoretical foundation for preparing optimal inorganic quantum dot luminescent materials using machine learning.

An electrochemical impedance study to analyse the phase transformation pattern and stability during electro-crystallization of CIGS photo-voltaic thin films

In this study, an effort has been made to gain a thorough knowledge of the phase transformation mechanism of quaternary thin films Cu (In, Ga) Se2 on FTO-glass substrates through electrochemical impedance spectroscopy (EIS). Here, a methodical strategy that starts with the investigation of unitary (Cu, Se, In and Ga), binary (Cu-In, Cu-Se, Cu-Ga, In-Se, In-Ga, and Se-Ga), tertiary (Cu-In-Se, Cu-In-Ga, In-Se-Ga, and Cu-Se-Ga), and finally quaternary (Cu-In-Ga-Se) deposition has been put forward. CuCl2, H2SeO4, InCl3, and GaCl3 were the salts utilized, and their combinations for each stage of deposition. The information obtained from EIS i.e., solution resistance (Rs), double layer capacitance (Cdl), charge transfer resistance (Rct), film resistances (Rfilm), and film capacitances (Cfilm) were used to find the mechanism. For unitary baths, Cu has the highest Rct and high Cdl under the optimized concentration. Binary baths further explained that Se-Ga and In-Ga can be used to perform one stage of deposition considering the low Rct and moderate Cdl. The tertiary bath combinations favored CIS as one stage of deposition in a similar manner (i.e., low Rct and Cdl). While using the quaternary bath, Rct and Cdl were found to have values of 483.6 Ω.cm2 and 285.78 µF/cm2. From the impedance pattern, it was deduced that the deposition takes place in two layers i.e., CIS and CGS tertiary films which eventually give the quaternary composition. Further, the stability of the films was also evaluated in the Na2SO4 solution, the CIGS film is found to be sufficiently stable.

Ameliorating and tuning the optical, dielectric, and electrical properties of hybrid conducting polymers/metal oxide nanocomposite for optoelectronic applications

Quaternary nanocomposite films with favorable electrical and optical properties have been produced by adding nickel oxide nanoparticles (NiO NPs) to polyvinyl alcohol (PVA), poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS), and polypyrrole (PPy) with a solution casting technique. In this study, different concentrations of NiO NPs were added to pure PVA/PEDOT:PSS/PPy blends and investigated through various characterization methods. From transmission electron microscopy (TEM) and X-ray diffraction (XRD) observations, the synthesized NiO NPs have a cubic phase and a diameter that varies between 6 and 40 nm. XRD analysis also indicates that the filling of PVA/PEDOT:PSS/PPy with NiO NPs results in a decrease in the crystallinity of the nanocomposites prepared. Raman analysis demonstrated the existence of prominent distinctive peaks associated with vibrational groups that characterize the synthesized samples, which change randomly with increasing concentrations of NiO NPs. In the UV/VIS spectrum for the PVA/PEDOT:PSS/PPy blend, there were two absorbance peaks at 202 and 224 nm that may result from π→π* and n→π* transitions. The results show that, by increasing NiO NP concentrations, UV/Vis absorbance increased by about 44 % at wavelength ranges from 190 to 240 nm, while optical band gap energies for indirect transitions decreased from 4.96 to 4.85 eV. The AC electrical conductivity of the films has been investigated via impedance spectroscopy at frequencies from 10−1 to 107 Hz. As the NiO NPs concentration in the blend rises, the AC electrical conductivity increases and is shown to follow Jonscher's rule. Additionally, it has been demonstrated that nanoparticle concentration causes a rise in composite dielectric loss and dielectric constant. The reduction in the optical bandgap energies and the enhancement of electrical properties due to the filling with NiO NPs suggest the possibility of using the prepared nanocomposites in optoelectronic devices.

Oxidation properties of quaternary Zr-based diboride thin films grown by hybrid high-power impulse/DC magnetron co-sputtering

Sputter-deposited transition metal diborides are subject of increasing attention for protective hard coatings. However, they suffer from high brittleness and rapid oxidation. Alloying with Ta increases their toughness, but their oxidation resistance requires further enhancement. Here, the influence of adding Si on the microstructure, mechanical, and oxidation properties of quaternary Zr1−(x + y)TaxSiyBz thin films grown by hybrid high-power impulse/DC magnetron co-sputtering (ZrB2-DCMS/Ta-HiPIMS/Si-DCMS) is studied. The layers are deposited at two different conditions of Ta-target HiPIMS powers and frequencies (30 W/100 Hz and 60 W/200 Hz series) with Si-target DCMS powers PSi = 0, 10, 15, and 20 W, while the ZrB2-target DCMS power is maintained constant at 200 W. For the 30 W/100 Hz series, x decreases from 0.20 to 0.15, y increases from 0 to 0.22, and z decreases from 2.0 to 1.8 by increasing PSi. The Ta/metal ratio remains constant at x = 0.3 for the 60 W/200 Hz series, while y increases from 0 to 0.1, and z decreases from 1.7 to 1.4. All layers show columnar growth and crystallize in a hexagonal-diboride structure, but crystal orientations change by increasing PSi. The 60 W/200 Hz series have much denser microstructure than the 30 W/100 Hz series. The 60 W/200 Hz series have high hardness values (≥35 GPa), while the hardness of the 30 W/100 Hz series significantly decreases from ∼37 to ∼21 GPa as a function of PSi. Zr0.7Ta0.3B1.7 has markedly better high-temperature oxidation resistance than Zr0.8Ta0.2B2.0 due to the formation of protective B-containing oxide scales. Alloying with Si considerably decreases the oxidation rate of the 30 W/100 Hz series owing to the formation of oxide scales containing a ZrSiO4 phase with a thin Si oxide top layer; however, the oxidation rate increases for the 60 W/200 Hz series as these quaternary alloys do not contain sufficiently high B and Si to form oxidation protective barriers.

Combinatorial Screening of Electronic and Geometric Effects in Compositionally Complex Solid Solutions Toward a Rational Design of Electrocatalysts

AbstractAlloying dissimilar elements presents an effective strategy for enhancing the electrocatalytic properties of multi‐metal materials. This enhancement can be attributed to the modification of electronic and geometric effects, which play a crucial role in determining the overall electrocatalytic performance. However, these effects are intricately intertwined and often interrelated due to their coexistence. As a result, the improved catalytic performance of multi‐metal systems is frequently attributed to synergistic or “cocktail” effects, without clear explanations of the role of alloying and the individual contribution of each element. A high‐throughput experimentation approach is employed to investigate 342 compositions within the quaternary thin film system Pd─Ag─Cu─Fe. The substitution of Cu with Fe (different number of valence electrons) or Ag (different atomic sizes) allows for selective manipulation of electronic or geometric effects, respectively. The substitution of Ag with Fe allows for the simultaneous variation of both effects. The number of valence electrons per unit cell volume is used as a descriptor for electrocatalytic activity, specifically with respect to the hydrogen evolution reaction (HER) and the oxygen evolution reaction (OER), which can be optimized through independent or simultaneous alteration of electronic and geometric effects.

Quaternary ZrCuCa-based thin films metallic glasses deposited by cathodic arc deposition

The current study’s aim is to obtain quaternary ZrCuCa based thin films using a physical vapor deposition method (PVD) - cathodic arc approach – in order to improve the surface properties of 316L stainless steel and Ti6Al4V implantable materials. The developed ZrCuCa-based layers could be potential candidates in the medical industry if they are able to combine their exceptional mechanical properties with the corrosion resistance of amorphous metallic glasses. Furthermore, addition of Mo, Mg, Si, and Sr was taken into consideration for the ZrCuCa structure and the resulted quaternary systems were analysed in detail, through electrochemical tests and bioactivity assay, which were carried out in synthetic body fluid (SBF) at human body temperature (37 °C). Surface morphology and roughness of the specimens before and after the tests were also evaluated. The results showed that regardless the substrate type, the roughness of the surface has increased for all coatings from 19 nm for 316L, and 50 nm for Ti6Al4V, to 2000 nm). The adhesion of obtained coatings was reached from 8 N to 18, the coatings on Ti6Al4V alloy was found to be from 12 N to 18 N, while on 316L steel was from 8 N to 15 N, indicating that the coatings deposited on Ti alloy have a better adhesion. The corrosion current density parameter for ZrCuCaMo and ZrCuCaMg sjowe the lowest value (316L: 21.99 µA/cm2 and 11.37 µA/cm2; Ti6Al4V: 1.62 µA/cm2 and 13.37 µA/cm2), indicating the best corrosion resistance. The mass evolution of the coatings deposited on 316L was ranged from the −0.47 mg to 1.37 mg, while for those deposited on Ti6Al4V, the values were ranged from −0.08 mg to 2.66 mg, indicating a degradation and biomineralization process, respectively. In conclusion, the electrochemical studies and bioactivity experiments demonstrated that the suggested coatings improve the substrate’s behaviour in simulated conditions, highlighting their potential as biomaterials.

Formation of quaternary [formula omitted] epilayers driven by thermally induced interdiffusion between spinel [formula omitted] epilayer and [formula omitted] substrate

Zinc aluminogallate, Zn(AlxGa1−x)2O4 (ZAGO), a single-phase spinel structure, offers considerable potential for high-performance electronic devices due to its expansive compositional miscibility range between aluminum (Al) and gallium (Ga). Direct growth of high-quality ZAGO epilayers however remains problematic due to the high volatility of zinc (Zn). This work highlights a novel synthesis process for high-quality epitaxial quaternary ZAGO thin films on sapphire substrates, achieved through thermal annealing of a ZnGa2O4 (ZGO) epilayer on sapphire in an ambient air setting. In-situ annealing x-ray diffraction measurements show that the incorporation of Al in the ZGO epilayer commenced at 850 °C. The Al content (x) in ZAGO epilayer gradually increased up to around 0.45 as the annealing temperature was raised to 1100 °C, which was confirmed by transmission electron microscopy (TEM) and energy dispersive x-ray spectroscopy. X-ray rocking curve measurement revealed a small full width at half maximum value of 0.72 °, indicating the crystal quality preservation of the ZAGO epilayer with a high Al content. However, an epitaxial intermediate β–(AlxGa1−x)2O3 layer (β - AGO) was formed between the ZAGO and sapphire substrate. This is believed to be a consequence of the interdiffusion of Al and Ga between the ZGO thin film and sapphire substrate. Using density functional theory, the substitution cost of Ga in sapphire was determined to be about 0.5 eV lower than substitution cost of Al in ZGO. Motivated by this energetically favorable substitution, a formation mechanism of the ZAGO and AGO layers was proposed. Spectroscopic ellipsometry studies revealed an increase in total thickness of the film from 105.07 nm (ZGO) to 147.97 nm (ZAGO/AGO) after annealing to 1100 °C, which were corroborated using TEM. Furthermore, an observed increase in the direct (indirect) optical bandgap from 5.06 eV (4.7 eV) to 5.72 eV (5.45 eV) with an increasing Al content in the ZAGO layer further underpins the formation of a quaternary ZAGO alloy with a tunable composition.

Electrical and Structural Properties of Chemically Deposited Photoconducting Films

In this study, we investigated the rise and decay of the chemically deposited quaternary metal sulfide thin films, which were deposited at different concentrations, temperatures, and deposition durations. On a glass substrate, films were deposited using a chemical bath deposition technique (CBD method). A graph plotted for the study of the rise and decay curves for these quaternary films was deposited. In addition to calculating the photocurrent and dark current values for the entire sample, the photoconductivity gain was also examined. There are reports and discussions about the X-ray diffraction pattern of our sample. The resulting films have thin-filmlike structures. This provides a unique outcome for photoconduction applications. Photoconducting gain ranges from 2.9 x 105 to 47.5 x 106are observed for various concentration, temperature, and deposition time combinations.

Time dependent laser irradiation induced structural, linear-nonlinear optical changes in Ag10Te10As20Se60 quaternary film for optoelectronic applications

Time dependent laser irradiation induced structural, linear-nonlinear optical changes in Ag10Te10As20Se60 quaternary film for optoelectronic applications

Structural, optical and electrical properties of ZnO–InN quaternary compound films

The ZnO–InN compound films were fabricated via both RF and DC sputtering by using indium and zinc metal target, where N2O and N2 gases were employed as the sputtering gas. The optical band gap was continuously tuned from 1.9 to 3.4 eV by precisely tailoring the chemical composition of the compound film. Both optical band gap and lattice spacing can be described by Vegard rule well. The carrier density can be adjusted up to 6.20 × 1020 cm−3 by varying the chemical composition of ZnO–InN compound. When the carrier density exceeds ∼1020 cm−3, the ZnO–InN compound films show the characteristics of degenerated semiconductor. Our experiments also reveal that the grain boundary scattering dominates carrier transport for ZnO–InN compound films with carrier density below 1020 cm−3.

Synthesis of tetramethylammonium lead iodide perovskite and investigation of its structural, vibrational, and optical characterizations

Organicinorganic halide perovskite is an intriguing material for solar cells and light emitting diodes. In this study, high-quality quaternary ammonium lead iodide materialN(CH3)4PbI3 powder and film were synthesized from a lead nitrate precursor system. Whereas characterizations were made by XRD, TEM, EDX, Raman, UV-VIS and PL spectroscopy to investigate the structural, morphological, vibrational, and optical properties of tetramethylammonium lead iodide perovskite. The hexagonal structure of the N(CH3)4PbI3 was revealed through X-ray diffraction. Also, a hexagonal rod-like morphology was observed by the transmission electron microscope. While a direct optical band gap of about 2.301eV was deduced using Tauc equation. The optical parameters of absorption coefficient, refractive index, extinction coefficient, optical conductivity, energy of the dispersion, effective single oscillator energy and dielectric constant were studied. And finally, tetramethylammonium lead iodide perovskite vibrational modes were examined using Raman spectroscopy.

Gamma irradiation effects on Ag based ternary and quaternary chalcogenide films

In this work the effect of gamma irradiation (50 kGy and 100 kGy) on properties of InxSb20-x Ag10Se70 (x= 0,10,20) films has been discussed. X ray diffraction, Transmission Electron Microscopy, Optical properties and Electrical properties have been successfully studied. X Ray diffraction and TEM images reveal the amorphous nature of thin films. A change in the optical energy gap is observed after irradiation.The optical band gap increases accompanied with increase in tailing parameter.The value of N decreases with irradiation dose.It is found that crytallinity is higher for ternary system as compare to quarternary system. From electrical measurements it has been that conduction is in the localised state and the DC activation energy decrease upon gamma irradiations.