Abstract
In this work the effect of gamma irradiation (50 kGy and 100 kGy) on properties of InxSb20-x Ag10Se70 (x= 0,10,20) films has been discussed. X ray diffraction, Transmission Electron Microscopy, Optical properties and Electrical properties have been successfully studied. X Ray diffraction and TEM images reveal the amorphous nature of thin films. A change in the optical energy gap is observed after irradiation.The optical band gap increases accompanied with increase in tailing parameter.The value of N decreases with irradiation dose.It is found that crytallinity is higher for ternary system as compare to quarternary system. From electrical measurements it has been that conduction is in the localised state and the DC activation energy decrease upon gamma irradiations.
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