Quasi-monolithic Integration Technology Research Articles

1.31–1.55-µm Hybrid integrated optoelectronic receiver using low-loss quasi-monolithic integration technology

In order to integrate photonic devices with electronic devices to realize the low-loss hybrid integrated devices. A wide spectral hybrid integrated optoelectronic receiver was fabricated by using quasi-monolithic integration technology (QMIT) in this paper. It consisted of a 8.5GHz InGaAs photodetector and a 1.25Gbps mature transimpedance pre-amplifier (TIA) complementrary metal oxide semiconductor (CMOS) chip. The Au layer was deposited on a designed Si platform to form planar waveguide electrode which replaced a part of bonding wire, so it reduced the parasitic parameters of the optoelectronic receiver, and then enhanced high-speed response characteristics and the stability of the hybrid integrated receiver. Finally, a 3Gbps clear open eye diagram of the hybrid integrated optoelectronic receiver was obtained.

Thermomechanical stress analysis and measurement in quasi-monolithic integration technology (QMIT)

This paper is dedicated to thermomechanical stress measurement and analysis with a new technology for microwave and millimeter-wave applications called quasi-monolithic integration technology (QMIT). A measurement-based method and a three-dimensional (3-D) finite-element simulator are applied to achieve the thermomechanical stress distribution under different temperatures for the different structures fabricated by QMIT. A closed-loop temperature measurement system consisting of a Pt-100 temperature sensor, a Peltier element, and a digitally controlled current source enables temperature measurements with a resolution of better than 0.1/spl deg/C. The surface profiles on the silicon substrate around the active devices have been measured using scanning probe microscopy (SPM), surface profiling (DEKTAK) (Veeco Instruments Inc., New York), or white-light interferometry [Tarraf et al. (2004)]. The measured results show very good agreement with the results of theoretical model calculations. The simulation results reveal a much lower induced thermomechanical stress for the enhanced QMIT structure than the earlier concept of QMIT, which results in a better lifetime and reliability for this technology.

Heat transfer improvement in quasi-monolithic integration technology

Static thermal analyses for the earlier concept and the enhanced quasi-monolithic integration technology (QMIT) are performed in detail. The effects of several parameters such as the properties of the materials involved and different geometries in all possible structures are described. Simulation results confirm a very low thermal resistance for the enhanced QMIT structure and highlight its superiority to the earlier concept of QMIT structures. This leads to a longer lifetime, a higher reliability and a better performance of the packaging.

An enhanced quasi-monolithic integration technology for microwave and millimeter wave applications

A new technology for integration of high frequency active devices into low cost silicon substrate has been introduced. The novel fabrication process gives excellent advantages such as extremely low thermal resistance, and a much lower thermo-mechanical stress than the earlier quasimonolithic integration technology (QMIT) concept . This highly improves the packaging lifetime and electrical characteristics of the active devices. The fabrication process is simple and compatible with fabrication of high-Q passive elements. Successful integration of high-Q passive elements on low resistivity silicon substrate in this technology has been possible for the first time. In comparison to the earlier concept of QMIT, elimination of air-bridges in this technology not only reduces the parasitic elements but also enables the fabrication of the rest of the circuit after measuring the microwave characteristics of the embedded active devices. This makes very accurate microwave and millimeter-wave designs possible. Using the new fabrication process, microwave and millimeter-wave circuits (with both coplanar and microstrip lines) containing power devices have for the first time been possible. Furthermore, the enhanced QMIT can be considered as an organic deposited multi chip module (MCM-D), which is a potential candidate for integration an system on a package (SOP) at microwave and millimeterwave frequencies.