Emission Wavelength Of Quantum Wells Research Articles

Factors Affecting Surface Plasmon Coupling of Quantum Wells in Nitride-Based LEDs: A Review of the Recent Advances.

Surface plasmon (SP)-enhanced quantum-well (QW) LEDs have proved their potential in replacing conventional lighting devices for their high-performance capabilities in ultraviolet (UV), blue and green spectral ranges. The SP-enhanced QW-LEDs have applications in light emission enhancement, light polarization, color conversion, and speed modulation. The electric field of the plasmonic mode of a metal couples with the exciton energy of QWs in resonance results in efficiency enhancement to several folds. The strength of the SP–QW coupling is mainly influenced by the type of metal used for SP enhancement, the metal nanostructure geometry, and the penetration depth of the SP fringing field in the p-GaN. The use of an appropriate dielectric interlayer between the metal and the p-GaN allows further control over SP resonance with QW emission wavelength. The penetration depth defines the p-GaN thickness and the QW period number for effective SP–QW coupling. The optimization of these parameters is key to achieve high efficiencies in SP-enhanced QW-LEDs for various applications. This review explains the SP enhancement mechanism and the key challenges facing the SP enhancement of QW-LEDs. The main factors that affect the SP–QW coupling have been explained in detail based on recent reports devoted to this field.

Important role of surface plasmon coupling with the quantum wells in a surface plasmon enhanced color-converting structure of colloidal quantum dots on quantum wells.

To improve the color-conversion efficiency based on a quantum-well (QW) light-emitting diode (LED), a more energy-saving strategy is needed to increase the energy transfer efficiency from the electrical input power of the LED into the emission of over-coated color-converter, not just from LED emission into converted light. In this regard, the efficiency of energy transfer of any mechanism from LED QW into the color-converter is an important issue. By overlaying blue-emitting QW structures and GaN templates with both deposited metal nanoparticles (DMNPs) and color-converting quantum dot (QD) linked synthesized metal nanoparticles (SMNPs) of different localized surface plasmon (LSP) resonance wavelengths for producing multiple surface plasmon (SP) coupling mechanisms with the QW and QD, we study the enhancement variations of their internal quantum efficiencies and photoluminescence decay times. By comparing the QD emission efficiencies between the samples with and without QW, one can observe the advantageous effect of QW coupling with LSP resonances on QD emission efficiency. Also, with the LSP resonance wavelengths of both DMNPs and SMNPs close to the QW emission wavelength for producing strong SP coupling with the QW and hence QD absorption, a higher QD emission or color-conversion efficiency can be obtained.

Efficiency enhancement of light color conversion through surface plasmon coupling.

The efficiency enhancement of light color conversion from blue quantum well (QW) emission into red quantum dot (QD) emission through surface plasmon (SP) coupling by coating CdSe/ZnS QDs on the top of an InGaN/GaN QW light-emitting diode (LED) is demonstrated. Ag nanoparticles (NPs) are fabricated within a transparent conductive Ga-doped ZnO interlayer to induce localized surface plasmon (LSP) resonance for simultaneously coupling with the QWs and QDs. Such a coupling process generates three enhancement effects, including QW emission, QD absorption at the QW emission wavelength, and QD emission, leading to an overall enhancement effect of QD emission intensity. An Ag NP geometry for inducing an LSP resonance peak around the middle between the QW and QD emission wavelengths results in the optimized condition for maximizing QD emission enhancement. Internal quantum efficiency and photoluminescence (PL) decay time measurements are performed to show consistent results with LED performance characterizations, even though the QD absorption of PL excitation laser may mix with the SP-induced QD absorption enhancement effect in PL measurement.

Coupling of a light-emitting diode with surface plasmon polariton or localized surface plasmon induced on surface silver gratings of different geometries.

A metal grating on top of a light-emitting diode (LED) with a designed grating period for compensating the momentum mismatch can enhance the surface plasmon polariton (SPP) coupling effect with the quantum wells (QWs) to improve LED performance. Here, we demonstrate the experimental results showing that the induced localized surface plasmon (LSP) resonance on such a metal grating can dominate the QW coupling effect for improving LED performance, particularly when grating ridge height is large. The finding is illustrated by fabricating Ag gratings on single-QW, green-emitting LEDs of different p-type thicknesses with varied grating ridge height and width such that the distance between the grating ridge tip and the QW can be controlled. Reflection spectra of the Ag grating structures are measured and simulated to identify the SPP or LSP resonance behaviors at the QW emission wavelength. The measured results of LED performances show that in the LED samples under study, both SPP and LSP couplings can lead to significant enhancements of internal quantum efficiency and electroluminescence intensity. At the designated QW emission wavelength, with a grating period theoretically designed for momentum matching, the LSP coupling effect is stronger, when compared with SPP coupling.

Behaviors of Surface Plasmon Coupled Light-Emitting Diodes Induced by Surface Ag Nanoparticles on Dielectric Interlayers

The enhanced surface plasmon (SP) coupling effects in a blue light-emitting diode (LED) with regularly patterned (REG) surface Ag nanoparticles (NPs) on a dielectric interlayer (DI) of a lower refractive index overgrown on p-GaN are demonstrated. Without a DI, the surface Ag NPs-induced SP coupling with the quantum wells (QWs) in the LED can lead to the increases of internal quantum efficiency and LED output intensity, the reduction of the external quantum efficiency droop effect, and the enhancement of modulation response. By adding a DI, the SP coupling effect is enhanced, resulting in the further improvements of all the aforementioned factors. We compare the SP coupling effects in the LEDs with REG Ag NPs on DIs to those of randomly distributed (RAN) Ag NPs previously reported. Although the variation trends of the localized surface plasmon (LSP) resonance peaks and hence the SP coupling behaviors of REG and RAN Ag NPs are similar, their LSP resonance strengths at the QW emission wavelength are different due to their different spectral patterns of LSP resonance. In other words, although the REG Ag NPs can produce stronger collective LSP resonance with a narrower spectral width, the SP coupling effect depends mainly on the LSP resonance strength at the QW emission wavelength.

Enhanced light emission from InGaN/GaN quantum wells by using surface plasmonic resonances of silver nanoparticle array

The effect of silver nanostructures prepared by nanosphere lithography on the photoluminescence (PL) properties of blue-emitting InGaN/GaN quantum wells (QWs) is studied. Arrays of silver nanoparticles are fabricated to yield a collective surface plasmonic resonance (SPR) near to the QWs emission wavelength. A large enhancement in peak PL intensity is observed, when the induced SPR wavelength of the nanoparticles on the QWs sample matches the QWs emission wavelength. The study proves that the SPRs could enhance the light emission efficiency of semiconductor material.

Surface plasmon coupling dynamics in InGaN/GaN quantum-well structures and radiative efficiency improvement.

Surface plasmonics from metal nanoparticles have been demonstrated as an effective way of improving the performance of low-efficiency light emitters. However, reducing the inherent losses of the metal nanoparticles remains a challenge. Here we study the enhancement properties by Ag nanoparticles for InGaN/GaN quantum-well structures. By using a thin SiN dielectric layer between Ag and GaN we manage to modify and improve surface plasmon coupling effects, and we attribute this to the improved scattering of the nanoparticles at the quantum-well emission wavelength. The results are interpreted using numerical simulations, where absorption and scattering cross-sections are studied for different sized particles on GaN and GaN/SiN substrates.

Dependencies of the emission behavior and quantum well structure of a regularly-patterned, InGaN/GaN quantum-well nanorod array on growth condition.

To achieve green emission from the sidewall non-polar quantum wells (QWs) of a GaN nanorod (NR) light-emitting diode, regularly patterned InGaN/GaN QW NR arrays are grown under various growth conditions of indium supply rate, QW growth temperature, and QW growth time for comparing their emission wavelength variations of the top-face c-plane and sidewall m-plane QWs based on photoluminescence and cathodoluminescence (CL) measurements. Although the variation trends of QW emission wavelength by changing those growth conditions in the NR structure are similar to those in the planar structure, the emission wavelength range of the QWs on an NR is significantly shorter than that in a planar structure under the same growth conditions. Under the growth conditions for a longer NR QW emission wavelength, the difference of emission wavelength between the top-face and sidewall QWs is smaller. Also, the variation range of the emission wavelength from the sidewall QWs over different heights on the sidewall becomes larger. On the other hand, strain state analysis based on transmission electron microscopy is undertaken to calibrate the average QW widths and average indium contents in the two groups of QW of an NR. The variation trends of the calibrated QW widths and indium contents are consistent with those of the CL emission wavelengths from various portions of NR QWs.

STUDY ON PL ENHANCEMENT OF InGaAs/GaAs QUANTUM WELL EMISSION BY GOLD NANOPARTICLE ARRAYS

In this paper, enhancement of photoluminescence (PL) intensity from InGaAs / GaAs quantum well (QW) caused by coupling effect of surface plasmon (SP) resonance generated by Au nanodisk arrays with QW emission is demonstrated experimentally. To increase the coupling efficiency, a thin layer of SiO 2 is introduced between Au nanodisk and GaAs surface. To match SP wavelength with QW emission wavelength (945 nm), Au nanodisk arrays with periodicity of 290 nm, radius of 70 nm, and thickness of 10 nm is fabricated. 2.17-fold enhancement is observed.

Strain relaxation in InGaN/GaN micro-pillars evidenced by high resolution cathodoluminescence hyperspectral imaging

A size-dependent strain relaxation and its effects on the optical properties of InGaN/GaN multiple quantum wells (QWs) in micro-pillars have been investigated through a combination of high spatial resolution cathodoluminescence (CL) hyperspectral imaging and numerical modeling. The pillars have diameters (d) ranging from 2 to 150 μm and were fabricated from a III-nitride light-emitting diode (LED) structure optimized for yellow-green emission at ∼560 nm. The CL mapping enables us to investigate strain relaxation in these pillars on a sub-micron scale and to confirm for the first time that a narrow (≤2 μm) edge blue-shift occurs even for the large InGaN/GaN pillars (d > 10 μm). The observed maximum blue-shift at the pillar edge exceeds 7 nm with respect to the pillar centre for the pillars with diameters in the 2–16 μm range. For the smallest pillar (d = 2 μm), the total blue-shift at the edge is 17.5 nm including an 8.2 nm “global” blue-shift at the pillar centre in comparison with the unetched wafer. By using a finite element method with a boundary condition taking account of a strained GaN buffer layer which was neglected in previous simulation works, the strain distribution in the QWs of these pillars was simulated as a function of pillar diameter. The blue-shift in the QWs emission wavelength was then calculated from the strain-dependent changes in piezoelectric field, and the consequent modification of transition energy in the QWs. The simulation and experimental results agree well, confirming the necessity for considering the strained buffer layer in the strain simulation. These results provide not only significant insights into the mechanism of strain relaxation in these micro-pillars but also practical guidance for design of micro/nano LEDs.

Fabrication of surface metal nanoparticles and their induced surface plasmon coupling withsubsurface InGaN/GaN quantum wells

Based on the fabrication of Ag nanoparticles (NPs) with controlled geometry andsurface density on an InGaN/GaN quantum well (QW) epitaxial structure, whichcontains indium-rich nano-clusters for producing localized states and free-carrier(delocalized) states in the QWs, and the characterization of their localized surfaceplasmon (LSP) coupling behavior with the carriers in the QWs, the interplaybehavior of LSP coupling with carrier delocalization in the QWs is demonstrated.By using the polystyrene nanosphere lithography technique with an appropriatenanosphere size and adjusting the post-fabrication thermal annealing condition, theinduced LSP resonance wavelength of the fabricated Ag NPs on the QW samplecan match the QW emission wavelength for generating the coherent couplingbetween the carriers in the QWs and the induced LSP. The coupling leads to theenhancement of radiative recombination rate in the QWs and results in increasedphotoluminescence (PL) intensity, red-shifted PL spectrum, reduced PL decay time,and enhanced internal quantum efficiency. It is found that the observed effectsare mainly due to the LSP coupling with the delocalized carriers in the QWs.

Control of spontaneous emission in InGaAs/GaAs quantum structure lattices

We report the control of spontaneous emission wavelength of quantum wells (QWs) using an artificial design of semiconductor lattice, i.e., quantum structure lattice (QSL). Two-dimension square quantum box arrays fabricated in strained InGaAs/GaAs QW samples are used as active lattice units in QSL for this study. The photoluminescence peak wavelength of the QSL can be adjusted to blue-shift, red-shift, or unchanged from that of the as-grown QW by fitting the in-plane Bragg diffraction condition of the QSL. The wavelength-shift has values of multiple phonon energies indicating that the phonon-assisted recombination process may play a significant role in the observed spontaneous emission.

Properties of Blue and Green InGaN/GaN Quantum Well Emission on Structured Semipolar Surfaces

We investigate the properties of semipolar InGaN/GaN quantum wells (QWs) emitting in the blue and green spectral region. A single QW is grown on inverse V-shaped GaN pyramids which are formed by selective area epitaxy on a template masked with different hexagonally ordered patterns. Using photo- and locally resolved cathodoluminescence measurements the high material quality of the semipolar planes could be confirmed (full width at half maximum (FWHM) of D0X: 2.6 meV). Furthermore, it was found that the InGaN QW emission wavelength within one pyramid depends on the facet type as well as on the position along the facet.

GaAs-based room-temperature continuous-wave 1.59μm GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy

Starting from the growth of high-quality 1.3μmGaInNAs∕GaAs quantum well (QW), the QW emission wavelength has been extended up to 1.55μm by a combination of lowering growth rate, using GaNAs barriers and incorporating some amount of Sb. The photoluminescence properties of 1.5μm range GaInNAsSb∕GaNAs QWs are quite comparable to the 1.3μm QWs, revealing positive effect of Sb on improving the optical quality of the QWs. A 1.59μm lasing of a GaInNAsSb∕GaNAs single-QW laser diode is obtained under continuous current injection at room temperature. The threshold current density is 2.6kA∕cm2 with as-cleaved facet mirrors.