Abstract
The effect of silver nanostructures prepared by nanosphere lithography on the photoluminescence (PL) properties of blue-emitting InGaN/GaN quantum wells (QWs) is studied. Arrays of silver nanoparticles are fabricated to yield a collective surface plasmonic resonance (SPR) near to the QWs emission wavelength. A large enhancement in peak PL intensity is observed, when the induced SPR wavelength of the nanoparticles on the QWs sample matches the QWs emission wavelength. The study proves that the SPRs could enhance the light emission efficiency of semiconductor material.
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