Quantum Well Emission Research Articles

Investigation of the Impact of Point Defects in InGaN/GaN Quantum Wells with High Dislocation Densities.

In this work, we report on the efficiency of single InGaN/GaN quantum wells (QWs) grown on thin (<1 µm) GaN buffer layers on silicon (111) substrates exhibiting very high threading dislocation (TD) densities. Despite this high defect density, we show that QW emission efficiency significantly increases upon the insertion of an In-containing underlayer, whose role is to prevent the introduction of point defects during the growth of InGaN QWs. Hence, we demonstrate that point defects play a key role in limiting InGaN QW efficiency, even in samples where their density (2-3 × 109 cm-2) is much lower than that of TD (2-3 × 1010 cm-2). Time-resolved photoluminescence and cathodoluminescence studies confirm the prevalence of point defects over TDs in QW efficiency. Interestingly, TD terminations lead to the formation of independent domains for carriers, thanks to V-pits and step bunching phenomena.

Selective Area Epitaxy of Highly Strained InGaAs Quantum Wells (980-990 nm) in Ultrawide Windows Using Metalorganic Chemical Vapor Deposition.

We employed the selective-area-epitaxy technique using metalorganic chemical vapor deposition to fabricate and study samples of semiconductor heterostructures that incorporate highly strained InGaAs quantum wells (980-990 nm emission wavelength). Selective area epitaxy of InGaAs quantum wells was performed on templates that had a patterned periodic structure consisting of a window (where epitaxial growth occurred) and a passive mask (where epitaxial growth was suppressed), each with a width of 100 µm for every element. Additionally, a selectively grown potential barrier layer was included, which was characterized by an almost parabolic curvature profile of the surface. We conducted a study on the influence of the curvature profile of the growth surface on the optical properties of InGaAs quantum wells and the spatial distribution of composition in an ultrawide window. Our results showed that, under fixed selective-area-epitaxy conditions, the composition of the InxGa1-xAs and the wavelength of the quantum-well emission changed across the width of the window. Our study demonstrates that increasing the curvature profile of the growth surface of highly strained quantum wells leads to a transition in the photoluminescence wavelength distribution profile across the window, from quasi-parabolic to inverted parabolic.

Surface lattice resonances for beaming and outcoupling green μ LEDs emission

Abstract Light-Emitting Diodes (LEDs) exhibit a typical Lambertian emission, raising the need for secondary optics to tailor their emission depending on specific applications. Here, we introduce plasmonic metasurfaces to InGaN green emitting quantum wells for LEDs to control their far-field emission directionality and enhance the collection efficiency. The proposed mechanism is based on surface lattice resonances (SLRs) and relies on the near-field coupling between the InGaN multiple quantum wells (MQWs) and periodic arrays of aluminum (Al) nanodisks. Fourier microscopy measurements reveal that the angular photoluminescence emission pattern depends on the lattice constant of the metasurfaces. We demonstrate that integrating Al metasurfaces in LED wafers can enhance the collected outcoupled light intensity by a factor of 5 compared to the same sample without metasurfaces. We have also performed numerical calculations of the far-field emission based on the reciprocity principle and obtained a very good agreement with the experimental data. The proposed approach controls the emission directionality without the need for secondary optics and it does not require post-etching of the GaN, which makes it a potential candidate to control and enhance the generated light from micro-LEDs.

Factors Affecting Terahertz Emission from InGaN Quantum Wells under Ultrafast Excitation

InGaN quantum wells (QWs) grown on c-plane sapphire substrate experience strain due to the lattice mismatch. The strain generates a strong piezoelectric field in QWs that contributes to THz emission under ultrafast excitation. Physical parameters such as QW width, period number, and Indium concentration can affect the strength of the piezoelectric field and result in THz emission. Experimental parameters such as pump fluence, laser energy, excitation power, pump polarization angle, and incident angle can be tuned to further optimize the THz emission. This review summarizes the effects of physical and experimental parameters of THz emission on InGaN QWs. Comparison and relationship between photoluminescence properties and THz emission in QWs are given, which further explains the origin of THz emission in InGaN QWs.

Highly Uniform Array of Hexagonally Symmetric Micro‐Pyramid Structures for Scalable and Single Quantum Dot Emitters

AbstractControlling the site, size, and shape of group III‐nitride quantum dots (QDs) is critical for the development of mass‐producible single‐photon sources for scalable quantum technologies operable at room temperature. Herein, a methodology is proposed for fabricating high‐purity single QD emitters by controlling site‐controlled GaN micro‐pyramid structures with a high degree of uniformity and symmetry. To achieve a uniformly grown, hexagonally symmetric micro‐pyramid array, the H2/N2 carrier gas ratio, growth temperature, and V/III ratio are controlled to attain self‐limited growth regime and self‐limited width at the GaN pyramid apex. A thin InGaN layer is consecutively grown on a pyramid array under the growth condition for enhancing the growth rate anisotropy to hinder the growth of InGaN quantum wells (QWs) at semi‐polar facets. As a result, single‐photon emission is observed from apex QD with suppressed background side QW emission while maintaining more than 90% high hexagonal QD symmetry over the large area of the wafer.

Surface plasmon coupling effects on the behaviors of radiative and non-radiative recombination in an InGaN/GaN quantum well

Although surface plasmon (SP) coupling has been widely used for enhancing the emission efficiency of an InGaN/GaN quantum well (QW) structure, the interplay of the carrier transport behavior in the QW with SP coupling, which is a crucial mechanism controlling the SP-coupling induced QW emission enhancement, is still an issue not well explored yet. To understand the effects of SP coupling on the radiative and non-radiative recombination behaviors of carriers in a QW structure, the temperature-dependent time-resolved photoluminescence spectroscopies of two QW samples of different indium contents with surface Ag nanoparticles are studied. A two-single-exponential model is used for calibrating their radiative and non-radiative decay times. The SP coupling process, which transfers carrier energy from a QW into the SP resonance mode for effective radiation and increases the effective radiative recombination rate, produces energy-dependent carrier depletion and, hence, disturbs the quasi-equilibrium condition of carrier distribution. In this situation, a strong carrier transport process occurs targeting a new quasi-equilibrium condition that enhances non-radiative recombination and, hence, reduces the benefit of using the SP coupling technique. To alleviate this problem of SP-coupling induced energy loss, a weak energy-dependent or broad-spectrum SP coupling process is recommended.

Photoluminescence study of exciton localization in InGaAs bulk and InGaAs/InAlAs wide quantum well on InP (001) substrate

Exciton localization has been investigated via photoluminescence (PL) measurements for a 50 nm InGaAs/InAlAs wide quantum well (QW) lattice-matched to an InP substrate. Discrete QW emission bands from both localized exciton (LE) recombination and free exciton (FE) recombination were observed, demonstrating modified state filling with increasing pump power. An “S” shaped dependence of the FE peak energy on the temperature represents a signature of exciton activation and transition from LEs into FEs. The exciton localization energy was measured to be 8.87 meV in the QW, which is much larger than the values of ∼3.39 meV found in the reference InGaAs bulk. In addition, a slightly longer lifetime was measured for LE emission than that of FEs. These results provide an in-depth assessment of carrier localization in the InGaAs/InAlAs/InP heterostructures and provide useful information for the design of optical devices.

The Nature of Auger Recombination in Type-I Quantum Well Lasers Operating in the Mid-Infrared

Auger recombination is known to be a significant non-radiative process limiting near- and mid-infrared quantum well lasers. The one-dimensional confinement of quantum wells and small band offsets (relative to the bandgap) permits two fundamentally different categories of Auger mechanisms to operate. These mechanisms may be identified as either <i>activated</i> or <i>thresholdless</i> in nature. In this work, we investigate the nature of the dominant Auger mechanism in mid-infrared emitting quantum wells by characterizing a range of type-I InGaAsSb quantum well lasers operating within the 2 - 3 &#x03BC;m wavelength range. The temperature dependence of both the threshold current density and integrated spontaneous emission reveal that the threshold current is dominated by radiative recombination up to a break-point temperature (occurring below 200 K). Beyond the break point temperature, the exponential dependence of the threshold current increases rapidly. The deterioration in the stability of lasing threshold indicates that a thermally activated Auger process is dominant in all devices and is sensitive to the population of heavy-holes in the quantum wells.

Multimicroscopy of cross-section zincblende GaN LED heterostructure

Zincblende GaN has the potential to bridge the “green gap” due to the absence of internal electric fields with respect to wurtzite GaN. However, at present, the quality of zincblende GaN light emitting diodes (LEDs) is not yet sufficient for useful efficient green devices. One of the major challenges is the poor spectral purity of the emitted light. A multimicroscopy approach, combining scanning electron microscopy-cathodoluminescence (SEM-CL), scanning transmission electron microscopy (STEM), and scanning electron diffraction (SED), is applied on a single feature to enable cross correlation between techniques and to investigate the possible causes for the broad optical emission of a zincblende GaN LED structure. This investigation demonstrates that SEM-CL on a site-specific TEM cross section prepared by focused ion beam (FIB) microscope can provide access to nanoscale light emission variations that can be directly related to structural differences seen in STEM. We demonstrate that the general large quantum well (QW) emission peak width relates to quantum well thickness and In content fluctuations. Multiple low-energy QW emission peaks are found to be linked with stacking fault bunches that intersect the QWs. Splitting of the QW emission peak is also found to be caused by the formation of wurtzite-phase inclusions associated with twins formed within the zincblende matrix. Our characterization also illustrates the quantum well structure within such wurtzite inclusions and their impact on the optical emission.

Effect of Si-doped InGaN underlayers on photoluminescence efficiency and recombination dynamics in InGaN/GaN quantum wells

A series of single InGaN/GaN quantum wells (QWs) with a Si-doped InGaN underlayer were studied to investigate the impact of the underlayer on photoluminescence efficiency and recombination dynamics. The thickness of the GaN capping layer was varied between samples, which changed the electric field across the QW due to band bending near the surface. When directly exciting the wells, thermionic emission of carriers results in a rapid drop in the photoluminesence efficiency with increasing temperature such that no emission is observed above 100 K. However, exciting above the energy of the barriers caused the intensity of the QW emission to drop more slowly, with up to 12% of the 10 K emission intensity remaining at 300 K. This difference is attributed to hole transfer from the underlayer into the QW, which increases in efficiency at higher temperatures, and is enhanced by stronger electric fields present in the GaN barriers of samples with thinner GaN capping layers. Further, the sample with the narrowest cap layer of 2 nm has a different shape and characteristic time for its photoluminescence decay transient and a different emission energy temperature dependence than the other samples. This behaviour was ascribed to a change in carrier localisation for this sample due to a reversal of the net field across the well compared to the other samples.

Study on higher-energy emission observed locally around V-pits on InGaN/GaN quantum wells grown on moderate-temperature GaN

We investigated the origin of the multi-peak higher-energy (HE) emission observed in the local photoluminescence (PL) spectra of InGaN/GaN quantum wells (QWs) grown on moderate-temperature-grown GaN (MT-GaN) layers and evaluated the relationship among the energy difference between the HE emission and InGaN/GaN single QW (SQW) emission corresponding to the potential barrier height and the V-pit diameter. The distribution of HE emissions and dark spots suggested the formation of so-called potential barriers around dislocations in the InGaN SQWs on the MT-GaN layers. Multiple HE emissions were observed in the local PL spectra acquired from the InGaN SQWs on the MT-GaN layers as well in the case of InGaN multiple QW on MT-GaN previously reported. This observation suggested that the origin of multi-peak HE emissions is an in-plane variation in In composition and/or well thickness. The energy difference between InGaN emission from c-plane QW and HE emission from V-pit facet increased as the MT-GaN layer thickness or V-pit diameter increased. The origin of both the multiple HE emissions and the increase in the energy difference with V-pit diameter in InGaN/GaN SQW on MT-GaN was probably the diffusion of group III atoms between different facets of the InGaN SQWs in sub-micrometer scale V-pits.

Factors Affecting Surface Plasmon Coupling of Quantum Wells in Nitride-Based LEDs: A Review of the Recent Advances.

Surface plasmon (SP)-enhanced quantum-well (QW) LEDs have proved their potential in replacing conventional lighting devices for their high-performance capabilities in ultraviolet (UV), blue and green spectral ranges. The SP-enhanced QW-LEDs have applications in light emission enhancement, light polarization, color conversion, and speed modulation. The electric field of the plasmonic mode of a metal couples with the exciton energy of QWs in resonance results in efficiency enhancement to several folds. The strength of the SP–QW coupling is mainly influenced by the type of metal used for SP enhancement, the metal nanostructure geometry, and the penetration depth of the SP fringing field in the p-GaN. The use of an appropriate dielectric interlayer between the metal and the p-GaN allows further control over SP resonance with QW emission wavelength. The penetration depth defines the p-GaN thickness and the QW period number for effective SP–QW coupling. The optimization of these parameters is key to achieve high efficiencies in SP-enhanced QW-LEDs for various applications. This review explains the SP enhancement mechanism and the key challenges facing the SP enhancement of QW-LEDs. The main factors that affect the SP–QW coupling have been explained in detail based on recent reports devoted to this field.

Nanoimprinting metal-containing nanoparticle-doped gratings to enhance the polarization of light-emitting chips by induced scattering

Polarized radiative luminous semiconductor chips have huge application potential in many highly value-added fields. The integration of a subwavelength grating is recognized to be the most promising method for the development of polarized chips, but still faces the challenge of low polarized radiative performance. This paper describes a proposal for, and the development of, a scattering-induced enhanced-polarization light-emitting diode chip by directly nanoimprinting a metal-containing nanoparticle-doped grating onto the top surface of a common flip chip. The rate at which quantum-well light emission is used by the developed polarized chip is improved by more than 30%. More attractively, the doped scattering nanoparticles function as a scattering-induced polarization state converter that is sandwiched in between the top aluminum grating and the bottom silver reflector of the chips. The originally non-radiated light, with an electric-field vector parallel to the grating lines, is reflected back and forth inside the sandwich until it changes to the perpendicular vibration mode and is radiated outside the chip. Therefore, the polarization extinction ratio is greatly improved, compared to undoped samples.

Coupling of quantum-well emission to waveguide–plasmon polaritons in rolled-up microtubes

We study the coupling of GaAs quantum wells to waveguide–plasmon polaritons supported by a thin InAlGaAs-based slab waveguide and a Ag grating. The hybrid photon–plasmon modes are excited in a freestanding emitter–waveguide–plasmon structure realized by rolling-up strained InAlGaAs-based layers and nanopatterned Ag structures. By varying the grating’s bar width, we tune the plasmonic resonance of the system. We observe by means of spatially, spectrally, and temporally resolved photoluminescence measurements, a coupling of the quantum-well emission to the waveguide–plasmon system for a specific grating’s bar width. Supported by finite-element simulations, we can assign the coupling to the excitation of a waveguide–plasmon polariton.

Important role of surface plasmon coupling with the quantum wells in a surface plasmon enhanced color-converting structure of colloidal quantum dots on quantum wells.

To improve the color-conversion efficiency based on a quantum-well (QW) light-emitting diode (LED), a more energy-saving strategy is needed to increase the energy transfer efficiency from the electrical input power of the LED into the emission of over-coated color-converter, not just from LED emission into converted light. In this regard, the efficiency of energy transfer of any mechanism from LED QW into the color-converter is an important issue. By overlaying blue-emitting QW structures and GaN templates with both deposited metal nanoparticles (DMNPs) and color-converting quantum dot (QD) linked synthesized metal nanoparticles (SMNPs) of different localized surface plasmon (LSP) resonance wavelengths for producing multiple surface plasmon (SP) coupling mechanisms with the QW and QD, we study the enhancement variations of their internal quantum efficiencies and photoluminescence decay times. By comparing the QD emission efficiencies between the samples with and without QW, one can observe the advantageous effect of QW coupling with LSP resonances on QD emission efficiency. Also, with the LSP resonance wavelengths of both DMNPs and SMNPs close to the QW emission wavelength for producing strong SP coupling with the QW and hence QD absorption, a higher QD emission or color-conversion efficiency can be obtained.

Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode

Light emitting diodes (LEDs) in the mid-infrared (MIR) spectral range require material systems with tailored optical absorption and emission at wavelengths λ &amp;gt; 2 μm. Here, we report on MIR LEDs based on In(AsN)/(InAl)As resonant tunneling diodes (RTDs). The N-atoms lead to the formation of localized deep levels in the In(AsN) quantum well (QW) layer of the RTD. This has two main effects on the electroluminescence (EL) emission. By electrical injection of carriers into the N-related levels, EL emission is achieved at wavelengths significantly larger than for the QW emission (λ ∼ 3 μm), extending the output of the diode to λ ∼ 5 μm. Furthermore, for applied voltages well below the flatband condition of the diode, EL emission is observed at energies much larger than those supplied by the applied voltage and/or thermal energy, with an energy gain ΔE &amp;gt; 0.2 eV at room temperature. We attribute this upconversion luminescence to an Auger-like recombination process.

Band structure engineering in strain-free GaAs mesoscopic systems

We investigate the optical properties of strain-free mesoscopic GaAs/AlxGa1 − xAs structures (MGS) coupled to thin GaAs/AlxGa1 − xAs quantum wells (QWs) with varying Al content (x). We demonstrate that quenching the QW emission by controlling the band crossover between AlGaAs (X-point) and GaAs (Γ-point) gives rise to long carrier lifetimes and enhanced optical emission from the MGS. For x = 0.33, QW and MGS show typical type-I band alignment with strong QW photoluminescence emission and much weaker sharp recombination lines from the MGS localized exciton states. For x ≥ 0.50, the QW emission is considerably quenched due to the change from type-I to type-II structure while the MGS emission is enhanced due to carrier injection from the QW. For x ≥ 0.70, we observe PL quenching from the MGS higher energy states also due to the crossover of X and Γ bands, demonstrating spectral filtering of the MGS emission. Time-resolved measurements reveal two recombination processes in the MGS emission dynamics. The fast component depends mainly on the X − Γ mixing of the MGS states and can be increased from 0.3 to 2.5 ns by changing the Al content. The slower component, however, depends on the X − Γ mixing of the QW states and is associated to the carrier injection rate from the QW reservoir into the MGS structure. In this way, the independent tuning of X − Γ mixing in QW and MGS states allows us to manipulate recombination rates in the MGS as well as to make carrier injection and light extraction more efficient.

Highly uniform InGaAs/InP quantum well nanowire array-based light emitting diodes

III-V semiconductor nanowire infrared light emitting diodes (LEDs) have great potential for the development of Si-based integrated photonics. In this paper, we report the growth of highly uniform triangular prism InGaAs/InP single quantum well (QW) nanowires using a 2-step growth by metal organic chemical vapour deposition by selective area epitaxy technique. Based on these nanowire arrays, we demonstrate nanowire array LEDs with strong electroluminescence at two main peaks, originating from the axial and radial QW respectively and control the relative emission of those two peaks. We further reveal that a long lateral contact of the nanowire LED results in more intense radial QW emission by shortening the current path to the radial quantum well. Our study provides an important foundation for the development of high-performance array nanowire-based devices such as high-power multi-wavelength LEDs, high power electrically switchable wavelength-selectors and QW infrared photodetectors.

Review—Defect-Tolerant Luminescent Properties of Low InN Mole Fraction InxGa1-xN Quantum Wells under the Presence of Polarization Fields

Different from the case of GaN or AlGaN alloys, the near-band-edge (NBE) emission of quantum wells (QWs) and even epilayers of InxGa1-xN alloys of low InN mole fractions (x) exhibits high quantum-efficiency (QE) against the presence of threading dislocations (TDs) as high as 109 cm−2. Accordingly InxGa1-xN alloys are exclusively used as an active region of green to ultraviolet light-emitting diodes (LEDs) and laser diodes, as well as the heart of white LEDs. Here, current understandings on the emission mechanisms of InxGa1-xN QWs, especially the defect-tolerant emission probability of localized excitons, are reviewed. There exist three disadvantages in obtaining high QE, namely a high density of TDs that cause the nonradiative recombination, kinetic immiscibility of In-containing alloys that introduces high-concentration Shockley-Read-Hall nonradiative recombination centers (NRCs) consisting of vacancy complexes, and high internal electric-fields across the QWs induced by the polarization discontinuities at heterointerfaces along the c-axis, which decrease the radiative recombination rate. The use of InxGa1-xN alloys of low x overcomes such disadvantages with the aid of In-originated localization effects that prevent excitons from trapping by TDs or NRCs. Simultaneous observation of short diffusion length and sufficiently long nonradiative recombination lifetime at room temperature indicates strong localization of holes or excitons.

Color conversion efficiency enhancement of colloidal quantum dot through its linkage with synthesized metal nanoparticle on a blue light-emitting diode.

Four surface-modified and, hence, positively charged metal nanoparticles (NPs) of different localized surface plasmon (LSP) resonance wavelengths are synthesized for linking with negatively charged, red-emitting colloidal CdZnSeS/ZnS quantum dots (QDs) on the top surface of a blue-emitting InGaN/GaN quantum well (QW) light-emitting diode (LED) through electro-static force. The metal NP-QD linkage leads to a short distance between them for producing their strong surface plasmon (SP) coupling, such that QD absorption and emission can be enhanced. Meanwhile, the small p-GaN thickness in the LED results in strong SP coupling between the LSP resonance of metal NP and the QWs of the LED, leading to enhanced QW emission and, hence, stronger QD excitation. All those factors together result in the increase of the color conversion efficiency of the QD.