Abstract

Polarized radiative luminous semiconductor chips have huge application potential in many highly value-added fields. The integration of a subwavelength grating is recognized to be the most promising method for the development of polarized chips, but still faces the challenge of low polarized radiative performance. This paper describes a proposal for, and the development of, a scattering-induced enhanced-polarization light-emitting diode chip by directly nanoimprinting a metal-containing nanoparticle-doped grating onto the top surface of a common flip chip. The rate at which quantum-well light emission is used by the developed polarized chip is improved by more than 30%. More attractively, the doped scattering nanoparticles function as a scattering-induced polarization state converter that is sandwiched in between the top aluminum grating and the bottom silver reflector of the chips. The originally non-radiated light, with an electric-field vector parallel to the grating lines, is reflected back and forth inside the sandwich until it changes to the perpendicular vibration mode and is radiated outside the chip. Therefore, the polarization extinction ratio is greatly improved, compared to undoped samples.

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