The electron field emission from semiconductor based layered structures has been investigated. Among studied structures were silicon tips coated with ultra-thin DLC layer, multilayer structures Si–SiO 2–Si ∗–SiO 2 with delta-doped Si ∗ layer, nanocomposite layers SiO x N y (Si) with Si nanocrystals embedded in SiO x N y matrix, GaN layers and Si–SiGe heterostructures. All of them have such peculiarities of electron field emission as peaks on emission current–voltage characteristics and corresponding Fowler–Nordheim plots. A physical model is proposed for explanation of experimental results. All emitters have layer, cluster wire or dot with quantum-size restriction in it. As a result, the quantum well with splitted electron levels exists or appears at electric field. Additional mechanism of electron emission-resonance tunneling is realized at definite electric fields.