Quantum Interference Of Electrons Research Articles

Absence of Weak Localization Effects in Strontium Ferromolybdate

Sr2FeMoO6-δ (SFMO) double perovskite is a promising candidate for room-temperature spintronic applications, since it possesses a half-metallic character (with theoretically 100% spin polarization), a high Curie temperature of about 415 K and a low-field magnetoresistance (LFMR). The magnetic, resistive and catalytic properties of the double perovskite SFMO are excellent for spintronic (non-volatile memory), sensing, fuel cell and microwave absorber applications. However, due to different synthesis conditions of ceramics and thin films, different mechanisms of electrical conductivity and magnetoresistance prevail. In this work, we consider the occurrence of a weak localization effect in SFMO commonly obtained in disordered metallic or semiconducting systems at very low temperatures due to quantum interference of backscattered electrons. We calculate the quantum corrections to conductivity and the contribution of electron scattering to the resistivity of SFMO. We attribute the temperature dependence of SFMO ceramic resistivity in the absence of a magnetic field to the fluctuation-induced tunneling model. We also attribute the decreasing resistivity in the temperature range from 409 K to 590 K to adiabatic small polaron hopping and not to localization effects. Neither fluctuation-induced tunneling nor adiabatic small polaron hopping favors quantum interference. Additionally, we demonstrate that the resistivity upturn behavior of SFMO cannot be explained by weak localization. Here, the fitted model parameters have no physically meaningful values, i.e., the fitted weak localization coefficient (B′) was three orders of magnitude lower than the theoretical coefficient, while the fitted exponent (n) of the electron–electron interaction term (CnTn) could not be assigned to a specific electron-scattering mechanism. Consequently, to the best of our knowledge, there is still no convincing evidence for the presence of weak localization in SFMO.

Universal conductance fluctuations in nanoscale topological insulator devices

Topological materials are promising candidates in fault-tolerant quantum information processing architectures, making it essential to understand the dephasing mechanisms in these materials. Here, we investigate gated, nanoscale mesas fabricated on thin films of cadmium arsenide (Cd3As2), a three-dimensional Dirac semimetal that can be tuned into different topological phases. We observe two independent types of conductance oscillations, one as a function of the applied magnetic field and the other as a function of the gate voltage. Varying the dimensions of the nanostructures allows the discrimination of a variety of scenarios for similar oscillations previously reported in the literature. We conclude that the conductance oscillations are not a signature of topological boundary states per se, but rather are universal conductance fluctuations. These results broadly inform future interpretations of electronic quantum interference in mesoscopic devices made from topological materials.

Quantum interference of electrons through electric-field-induced edge states in stacked graphene nanoribbons

In this work, we investigate, by means of numerical simulations, the quantum interference of electrons in stacked graphene structures consisting of two unequal width, armchair-edged graphene nanoribbons. Electronic states residing near the edges of the system are induced when an external electric field is applied normal to the ribbons. By reversing the direction of electric field in the central region, one can create an electronic analogue of the optical Fabry-Pérot (FP) interferometer. Electronic junctions formed at the boundaries between the central region and the left and right ones in the former play the role of the partially reflected mirrors in the latter. The observed conductance oscillations demonstrate that electrons in the edge states transporting through the system experience quantum interference similar to that of light waves passing through an optical FP interferometer. Moreover, electronic states formed at the junctions enhance inter-edge scattering which affects electron transmission significantly. The possibility to control electron transport via electric gates is also considered.

Probing two-path electron quantum interference in strong-field ionization with time-correlation filtering

Attosecond dynamics in strong-field tunnel ionization are encoded in intricate holographic patterns in the photoelectron momentum distributions. These patterns show the interference between two or more superposed quantum electron trajectories, which are defined by their ionization times and subsequent evolution in the laser field. We determine the ionization time separation between interfering pairs of electron orbits by performing a differential Fourier analysis on the measured momentum spectrum. We identify electron holograms formed by trajectory pairs whose ionization times are separated by less than a single quarter cycle, between a quarter cycle and half cycle, between a half cycle and three fourths of a cycle, and a full cycle apart. We compare our experimental results to the predictions of the Coulomb quantum orbit strong-field approximation (CQSFA) with significant success. We also time-filter the CQSFA trajectory calculations to demonstrate the validity of the technique on spectra with known time correlations. As a general analysis technique, the filter can be applied to all energy- and angularly resolved data sets to recover time correlations between interfering electron pathways, providing an important tool to analyze any strong-field ionization spectra. Moreover, it is independent of theory and can be applied directly to experiments, without the need of a direct comparison with orbit-based theoretical methods.

Direct probing of phonon mode specific electron\u2013phonon scatterings in two-dimensional semiconductor transition metal dichalcogenides

Electron–phonon scatterings in solid-state systems are pivotal processes in determining many key physical quantities such as charge carrier mobilities and thermal conductivities. Here, we report direct probing of phonon mode specific electron–phonon scatterings in layered semiconducting transition metal dichalcogenides WSe2, MoSe2, WS2, and MoS2 through inelastic electron tunneling spectroscopy measurements, quantum transport simulations, and density functional calculation. We experimentally and theoretically characterize momentum-conserving single- and two-phonon electron–phonon scatterings involving up to as many as eight individual phonon modes in mono- and bilayer films, among which transverse, longitudinal acoustic and optical, and flexural optical phonons play significant roles in quantum charge flows. Moreover, the layer-number sensitive higher-order inelastic electron–phonon scatterings, which are confirmed to be generic in all four semiconducting layers, can be attributed to differing electronic structures, symmetry, and quantum interference effects during the scattering processes in the ultrathin semiconducting films.

Magnetotransport and thermal properties of microwave synthesized nanostructured Bi2Te3

Magnetotransport and thermal properties of microwave-synthesized nanostructured Bi2Te3, a well-known material of topological interest, have been studied in detail. Temperature-dependent resistivity shows a disordered metal-like behavior at high temperature with unsaturated ln(T)-dependent upturns at low temperature manifesting localization tendency. The slopes (κ) of the normalized conductivity (Δσ) vs ln(T) curves change sharply with magnetic fields upto 1 T and then saturate at a certain higher field (Bϕ), which is an indication of a combined electron–electron interaction and quantum interference effect (QIE) dominated transport. A noteworthy result is a crossover from positive to negative Coulomb screening factor (F) in Bi2Te3. Low-field (H ≤ 1 T) magnetoconductivity at low temperature follows a 2D Hikami–Larkin–Nagaoka equation, thereby revealing the QIE and associated dephasing nature of the electronic states at high temperatures. High-field (14 T) magnetoresistance (MR) at 2 K shows interesting features like low-field weak antilocalization, possibly a defect-induced negative MR that vanishes after post-annealing treatment, and a high field parabolic character in place. The Seebeck coefficient (S) is negative and varies quasilinearly with a slight but notable slope change at intermediate temperatures. Heat capacity measurements are in line with a narrow gap degenerate semiconductor with a low θD of 140 K. A combined analysis of heat capacity and thermopower reveals the localization of carriers at low temperatures and is in line with transport data.

Electron quantum interference in epitaxial antiferromagnetic NiO thin films

The electron reflectivity from NiO thin films grown on Ag(001) has been systematically studied as a function of film thickness and electron energy. A strong electron quantum interference effect was observed from the NiO film, which is used to derive the unoccupied band dispersion above the Fermi surface along the Γ−X direction using the phase accumulation model. The experimental bands agree well with first-principles calculations. A weaker electron quantum interference effect was also observed from the CoO film.

Room‐Temperature Mesoscopic Fluctuations and Coulomb Drag in Multilayer WSe2

Mesoscopic fluctuations, manifesting the quantum interference (QI) of electrons, have been theoretically proposed in bilayer Coulomb drag systems. Unfortunately, these phenomena are usually observed at cryogenic temperatures, which severely limits their novel physics for pragmatic applications. In this paper, observation of room-temperature QI and Coulomb drag in a multilayer WSe2 transistor is reported via graphene contacts separately at its top and bottom layers. The central layers of WSe2 act as an insulating region with a width of few nanometers, which spatially separates the top and bottom conducting channels and provides a strong Coulomb interaction between them, leading to large conductance oscillations at room temperature. The gradual suppression of the oscillations with the increase in the applied magnetic field and/or injected current further confirms the QI phenomenon. With the decrease in temperature, the Coulomb drag effect is exhibited in the system owing to the increased thickness of the insulating region. This study reveals a novel approach for realization of advanced quantum electronics operating at high temperatures.

Suppression of the 0−π transition in a Josephson junction with parallel double-quantum-dot barriers

With the help of the numerical renormalization group method, we theoretically investigate the Josephson phase transition in a parallel junction with one quantum dot embedded in each arm. It is found that in the cases of uniform dot levels and dot-superconductor couplings, the Josephson phase transition will be suppressed. This is manifested as the fact that with the enhancement of the electron correlation, the supercurrent only arrives at its $\pi'$ phase but cannot enter its $\pi$ phase. Moreover, when the dot levels are detuned, one $\pi'$-phase island appears in the phase diagram. Such a result is attributed to the nonlocal motion of the Cooper pair in this structure. We believe that this work can be helpful in understanding the Josephson phase transition modified by the electron correlation and quantum interference.

Electronic Griffiths phase and quantum interference in disordered heavy-fermion systems

We investigated the specific heat and electrical resistivity of disordered heavy-fermion systems ${\mathrm{Ce}}_{2}{\mathrm{Co}}_{0.8}{\mathrm{Si}}_{3.2}$ and ${\mathrm{Ce}}_{2}{\mathrm{Co}}_{0.4}{\mathrm{Rh}}_{0.4}{\mathrm{Si}}_{3.2}$. Results show that pronounced non-Fermi-liquid behavior in these Kondo disordered compounds originates from approaching metal-insulator transition rather than from proximity to magnetic instability. Power-law divergence of the local Kondo temperature distribution, $P({T}_{K})$, in the limit of ${T}_{K}\ensuremath{\rightarrow}0$, and clear signature of the quantum interference corrections in the resistivity detected deep below the onset of Kondo coherent state, point to electronic Griffiths phase formation in the studied compounds.

Controlling the thermoelectric effect by mechanical manipulation of the electron\u2019s quantum phase in atomic junctions

The thermoelectric voltage developed across an atomic metal junction (i.e., a nanostructure in which one or a few atoms connect two metal electrodes) in response to a temperature difference between the electrodes, results from the quantum interference of electrons that pass through the junction multiple times after being scattered by the surrounding defects. Here we report successfully tuning this quantum interference and thus controlling the magnitude and sign of the thermoelectric voltage by applying a mechanical force that deforms the junction. The observed switching of the thermoelectric voltage is reversible and can be cycled many times. Our ab initio and semi-empirical calculations elucidate the detailed mechanism by which the quantum interference is tuned. We show that the applied strain alters the quantum phases of electrons passing through the narrowest part of the junction and hence modifies the electronic quantum interference in the device. Tuning the quantum interference causes the energies of electronic transport resonances to shift, which affects the thermoelectric voltage. These experimental and theoretical studies reveal that Au atomic junctions can be made to exhibit both positive and negative thermoelectric voltages on demand, and demonstrate the importance and tunability of the quantum interference effect in the atomic-scale metal nanostructures.

Heisenberg and Dzyaloshinskii-Moriya interactions controlled by molecular packing in trinuclear organometallic clusters

Motivated by recent synthetic and theoretical progress we consider magnetism in crystals of multi-nuclear organometallic complexes. We calculate the Heisenberg symmetric exchange and the Dzyaloshinskii-Moriya antisymmetric exchange. We show how, in the absence of spin-orbit coupling, the interplay of electronic correlations and quantum interference leads to a quasi-one dimensional effective spin model in a typical tri-nuclear complex, Mo$_3$S$_7$(dmit)$_3$, despite its underlying three dimensional band structure. We show that both intra- and inter-molecular spin-orbit coupling can cause an effective Dzyaloshinskii-Moriya interaction. Furthermore, we show that, even for an isolated pair of molecules the relative orientation of the molecules controls the nature of the Dzyaloshinskii-Moriya coupling. We show that interference effects also play a crucial role in determining the Dzyaloshinskii-Moriya interaction. Thus, we argue, that multi-nuclear organometallic complexes represent an ideal platform to investigate the effects of Dzyaloshinskii-Moriya interactions on quantum magnets.

Enhancement of giant magnetoresistance and oscillation by wave-vector filtering in Fe/Ag/Fe/InAs/Ag

The performance of a giant magnetoresistance (GMR) heterostructure Fe/Ag/Fe/InAs/Ag(100) in the current-perpendicular-to-plane geometry is presented. Calculations are based on a realistic tight-banding model with full $spd$ bands and the recursive Green's function algorithm. Results show that the system's GMR can reach values above 1000%. This GMR enhancement mainly is a result of the wave-vector filtering effect imposed by the InAs layer, restricting conductance within a small region around the $\mathrm{\ensuremath{\Gamma}}$ point in the 2D Brillouin zone. Calculations also reveal that when the Fermi level sits in the InAs band gap, MR gradually saturates as a function of InAs thickness with a smooth plateau; whereas when the Fermi level is in the InAs conduction band and close to the band bottom, GMR exhibits an oscillatory behavior with a large period. GMR oscillations are also observed with respect to Ag thickness, with oscillation amplitude determined by the Fermi level position relative to the InAs conduction band edge. The oscillation periods in both cases can be well explained by the concept of quantum-well states, and are determined by the spanning vector of the Fermi surface belly of the material whose thickness is varied. The observed GMR oscillations are due to the quantum interference of conduction electrons near the $\mathrm{\ensuremath{\Gamma}}$ point. The GMR and area-resistance (RA) product profiles at a wide range of Fermi energy positions relative to InAs bands are also compared. Near the GMR peak (with GMR above 1000%) in the conduction band, RA product can be as low as 8.$8\mathrm{\ensuremath{\Omega}}\phantom{\rule{0.16em}{0ex}}\ensuremath{\mu}{\text{m}}^{2}$. This feature of large GMR but small RA product results from the wave-vector filtering effect of doped InAs, and it makes the structure under study distinct from conventional GMR systems (small GMR, small RA) or magnetic tunnel junctions (large GMR, large RA).

Electron Interference in Ballistic Graphene Nanoconstrictions.

We realize nanometer size constrictions in ballistic graphene nanoribbons grown on sidewalls of SiC mesa structures. The high quality of our devices allows the observation of a number of electronic quantum interference phenomena. The transmissions of Fabry-Perot-like resonances are probed by insitu transport measurements at various temperatures. The energies of the resonances are determined by the size of the constrictions, which can be controlled precisely using STM lithography. The temperature and size dependence of the measured conductances are in quantitative agreement with tight-binding calculations. The fact that these interference effects are visible even at room temperature makes the reported devices attractive as building blocks for future carbon based electronics.

Using light and heat to controllably switch and reset disorder configuration in nanoscale devices

Quantum dots exhibit reproducible conductance fluctuations at low temperatures due to electron quantum interference. These fluctuations are not solely determined by dot geometry; they are also highly sensitive to the underlying disorder potential. Here we exploit this sensitivity to better understand the role that background impurities play in the electronic properties of undoped AlGaAs/GaAs heterostructures, and nanoscale devices based thereon. In particular, we report the remarkable ability to first alter the disorder potential in an undoped AlGaAs/GaAs heterostructure by optical illumination and then reset it back to its initial configuration by room temperature thermal cycling in the dark. We attribute this behavior to a mixture of C background impurities acting as shallow acceptors and deep trapping by Si background donor impurities, i.e., DX centers. This ``alter and reset'' capability is not possible in modulation-doped heterostructures and offers a route to new studies of how background impurities influence transport in nanoscale semiconductor devices.

Positive and negative magnetoresistance phenomena observed in magnetic electrospun polyacrylonitrile-based carbon nanocomposite fibers

Unique temperature dependent resistance behavior (positive/negative temperature coefficient switching at 240 K), and tunable negative and positive magnetoresistance switching phenomena were observed in the magnetic carbon nanocomposite fibers prepared from heat treatment of the nitrate soaked oxidation stabilized polyacrylonitrile (PAN) nanofibers. The physical mechanisms were revealed by considering the variable range hopping electron transportation model, electron quantum interference and spin-dependent scattering effects.

Direct photodetachment of F−by mid-infrared few-cycle femtosecond laser pulses

The recent adiabatic saddle-point approach of Shearer et al. [Phys. Rev. A 84, 033409 (2011)] is extended to multiphoton detachment of negative ions with outer $p$-state electrons. This theory is applied to investigate the strong-field photodetachment dynamics of F${}^{\ensuremath{-}}$ ions exposed to few-cycle femtosecond laser pulses, without taking into account the rescattering mechanism. Numerical calculations are considered for mid-infrared laser wavelengths of 1300 and 1800 nm at laser intensities of 7.7 $\ifmmode\times\else\texttimes\fi{}$ 10${}^{12}$, 1.1 $\ifmmode\times\else\texttimes\fi{}$ 10${}^{13}$, and 1.3 $\ifmmode\times\else\texttimes\fi{}$ 10${}^{13}$ W/cm${}^{2}$. Two-dimensional momenta saddle-point spectra exhibit a distinct distribution in the shape of a ``smile'' in the complex-time plane. Electron momentum distribution maps of direct electrons are investigated. These produce a distinct pattern of above-threshold detachment (ATD) concentric rings due to constructive and destructive quantum interference of electrons detached from their parent ions. Probability detachment distributions presented, capturing the influence of saturation effects that are found to become more significant with increasing laser intensity at a fixed wavelength. ATD photoangular distributions as functions of laser intensity and wavelength near channel closings are also investigated and found to be sensitive to initial-state symmetry. Nonmonotonic structures observed in the ejected photoelectron energy spectra are attributed to interference effects from coherent electronic wave packets. Additionally the profiles of all the photoelectron emission spectra show strong dependence on the carrier-envelope phase, indicating that it is a reliable parameter for characterizing the wave form of the pulse.

Ballistic interferences in suspended graphene

The low-energy electronic excitations in graphene are described by massless Dirac fermions that have a linear dispersion relation. Taking advantage of this 'optics-like' electron dynamics, generic optical elements like lenses and wave guides have been proposed for electrons in graphene. Tuning of these elements relies on the ability to adjust the carrier concentration in defined areas. However, the combination of ballistic transport and complex gating remains challenging. Here we report on the fabrication and characterization of suspended graphene p-n junctions. By local gating, resonant cavities can be defined, leading to complex Fabry-Pérot interferences. The observed conductance oscillations account for quantum interference of electrons propagating ballistically over distances exceeding 1 μm. Visibility of the interferences is demonstrated to be enhanced by Klein collimation at the p-n interface. This finding paves the way to more complex gate-controlled ballistic graphene devices and brings electron optics in graphene closer to reality.

Semiclassical approximation for transmission through open Sinai billiards

We use a semiclassical approximation to study the transport through the weakly open chaotic Sinai quantum billiards which can be considered as the schematic of a Sinai mesoscopic device, with the diffractive scatterings at the lead openings taken into account. The conductance of the ballistic microstructure which displays universal fluctuations due to quantum interference of electrons can be calculated by Landauer formula as a function of the electron Fermi wave number, and the transmission amplitude can be expressed as the sum over all classical paths connecting the entrance and the exit leads. For the Sinai billiards, the path sum leads to an excellent numerical agreement between the peak positions of power spectrum of the transmission amplitude and the corresponding lengths of the classical trajectories, which demonstrates a good agreement between the quantum theory and the semiclassical theory.

Review Article: Structures of phthalocyanine molecules on surfaces studied by STM

This review mainly focuses on progress recently achieved in the growth of phthalocyanine molecules on single-crystal surfaces of sub-monolayer up to few-monolayer thin films studied by scanning tunneling microscopy in our groups. On metallic surfaces such as Au(111), Ag(111) and Cu(111), molecular superstructures are determined by combining directional intermolecular interactions caused by symmetry reduction, molecule-substrate interactions and indirect long-range interactions due to quantum interference of surface state electrons. On semiconducting TiO2 surface, molecular assembling structures are dictated by the strong molecule-substrate interaction. However, on insulating NaCl film, molecule-molecule interaction dominates over the molecule-NaCl coupling, leading to molecular growth behavior. Knowledge obtained from these studies would help people better understand the physicochemical properties of the phthalocyanine molecules at surfaces so that their new applications could be further explored and uncovered in the future.