Quantum Information Processing Devices Research Articles

Integrated Manipulation and Addressing of Spin Defect in Diamond.

Scalable and addressable integrated manipulation of qubits is crucial for practical quantum information applications. Different waveguides have been used to transport the optical and electrical driving pulses, which are usually required for qubit manipulation. However, the separated multifields may limit the compactness and efficiency of manipulation and introduce unwanted perturbation. Here, we develop a tapered fiber-nanowire-electrode hybrid structure to realize integrated optical and microwave manipulation of solid-state spins at nanoscale. Visible light and microwave driving pulses are simultaneously transported and concentrated along an Ag nanowire. Studied with spin defects in diamond, the results show that the different driving fields are aligned with high accuracy. The spatially selective spin manipulation is realized. And the frequency-scanning optically detected magnetic resonance (ODMR) of spin qubits is measured, illustrating the potential for portable quantum sensing. Our work provides a new scheme for developing compact, miniaturized quantum sensors and quantum information processing devices.

Geometric phase and photonic spin Hall effect in thin films with architected columnar morphology

We have detected spin-dependent splitting of light, the signature of the photonic spin Hall effect (PSHE), via quantum weak measurements on two types of thin films with architected columnar morphology. Specifically, we fabricated columnar thin films comprising parallel tilted nanocolumns and chiral sculptured thin films comprising parallel upright nanohelices by resistively heating zinc selenide (ZnSe) in a low-pressure chamber and collecting the collimated vapor flux of ZnSe on planar substrates with dynamically varying orientation. The architected columnar morphology creates a spin-dependent geometric Pancharatnam–Berry (PB) phase corresponding to the evolution of polarization states on the Poincaré sphere. Morphology-controlled anisotropy and spatial inhomogeneity result in the depolarization and optical rotation of incident plane-polarized light, and intrinsic spin-precession coupling with the propagation vector, contributing to the efficient generation and two-dimensional manipulation of both in-plane and out-of-plane spin splitting and steering the PB phase in the propagation process. The first experimental observations of widely tailorable PSHE and PB phase in thin films with architected columnar morphology may lead to new applications ranging from spin-controlled nanophotonics to optoelectronic devices for quantum information processing and optical communication.

Sn/InAs Josephson Junctions on Selective Area Grown Nanowires with in Situ Shadowed Superconductor Evaporation.

Superconductor-semiconductor nanowire hybrid structures are useful in fabricating devices for quantum information processing. While selective area growth (SAG) offers the flexibility to grow semiconductor nanowires in arbitrary geometries, in situ evaporation of superconductors ensures pristine superconductor-semiconductor interfaces, resulting in strong induced superconductivity in the semiconducting nanowire. In this work, we used high-aspect-ratio SiOx dielectric walls to in situ evaporate islands of superconductor tin on in-plane InAs SAG nanowires. Our technique enables customization in the designs of such hybrid nanostructures, while simultaneously performing the nanowire and superconductor growth without breaking vacuum. Using this technique, we grew super(S)-normal(N)-super(S), NS, and SNSNS junctions. We performed cryogenic electron transport measurements revealing the presence of gate and field tunable supercurrents. We further measured the superconducting gap and critical fields in the hybrid nanostructures and the crossover from 2e to 1e periodicity in the SNSNS junctions as a proof of the usability of these hybrid nanostructures.

Transporting Cold Atoms towards a GaN-on-Sapphire Chip via an Optical Conveyor Belt

Trapped atoms on photonic structures inspire many novel quantum devices for quantum information processing and quantum sensing. Here, we demonstrate a hybrid photonic-atom chip platform based on a GaN-on-sapphire chip and the transport of an ensemble of atoms from free space towards the chip with an optical conveyor belts. Due to our platform’s complete optical accessibility and careful control of atomic motion near the chip with a conveyor belt, successful atomic transport towards the chip is made possible. The maximum transport efficiency of atoms is about 50% with a transport distance of 500 μm. Our results open up a new route toward the efficient loading of cold atoms into the evanescent-field trap formed by the photonic integrated circuits, which promises strong and controllable interactions between single atoms and single photons.

Brightening and Control of Spin‐Forbidden Dark Excitons in a Strained Monolayer Semiconductor

AbstractDark excitons are fascinating for condensed matter physics, quantum information processing, and optoelectronics due to their long lifetimes. However, direct optical access to dark excitons is still challenging due to the violation of the spin selection rule. Here, a new scheme for the brightening of spin‐forbidden dark exciton in WS2 monolayers by creating artificial out‐of‐plane shear strain that induces an effective in‐plane pseudo‐magnetic field is proposed. To reveal dark excitons, low‐temperature magneto‐photoluminescence experiments on the strained WS2 monolayers are performed. It is found that the dark excitons appear at 59 meV below the bright ones and exhibit an asymmetric magnetic field dependence, which is in agreement with the model taking into account the effect of the out‐of‐plane shear strain on spin‐flip processes of exciton states. The fieldless scheme has great potential in the application of dark excitons for new quantum information processing devices.

Sample-efficient verification of continuously-parameterized quantum gates for small quantum processors

Most near-term quantum information processing devices will not be capable of implementing quantum error correction and the associated logical quantum gate set. Instead, quantum circuits will be implemented directly using the physical native gate set of the device. These native gates often have a parameterization (e.g., rotation angles) which provide the ability to perform a continuous range of operations. Verification of the correct operation of these gates across the allowable range of parameters is important for gaining confidence in the reliability of these devices. In this work, we demonstrate a procedure for sample-efficient verification of continuously-parameterized quantum gates for small quantum processors of up to approximately 10 qubits. This procedure involves generating random sequences of randomly-parameterized layers of gates chosen from the native gate set of the device, and then stochastically compiling an approximate inverse to this sequence such that executing the full sequence on the device should leave the system near its initial state. We show that fidelity estimates made via this technique have a lower variance than fidelity estimates made via cross-entropy benchmarking. This provides an experimentally-relevant advantage in sample efficiency when estimating the fidelity loss to some desired precision. We describe the experimental realization of this technique using continuously-parameterized quantum gate sets on a trapped-ion quantum processor from Sandia QSCOUT and a superconducting quantum processor from IBM Q, and we demonstrate the sample efficiency advantage of this technique both numerically and experimentally.

Asymmetric Fraunhofer diffraction in a quantum dot molecule via tunneling-induced transparency

We manipulate the coupling effect between interdot tunneling and the external control field to study the optical diffractive property in a quantum dot molecule (QDM) system. Based on the density matrix approach, an analytical relation is obtained for the optical susceptibility, which shows tunneling-induced transparency (TIT) in the absorption spectra. We propose an innovative optoelectronic device called tunneling-induced grating, which operates based on the diffraction of the forward-transmitted probe laser light. The diffraction integrals for the far-field regime (i.e., Fraunhofer diffraction) are numerically solved, and the effect of interdot tunneling coupling strength on the diffraction patterns is studied. It is shown that the transmission is increased under tunneling-induced quantum coherence. The weak probe light can be diffracted into higher-order directions upon applying a standing-wave control field. The optimal parametric condition for maximum first- and second-order diffractions is obtained. The results find the potential applications in quantum information processing devices, such as all-optical grating and switches at low light levels.

Origin of metallic-like behavior in disordered carbon nano-onions

Carbon nano-onions are a class of nanomaterials that can exhibit long electron spin relaxation times at room temperature and thus hold promise as potential building blocks for spintronics and quantum information processing devices. Despite first being synthesized 30 years ago, there exists a gap in understanding electronic and magnetic properties of these nanostructures. Here we investigate the origin of the metallic-like behavior that has been observed experimentally in disordered nano-onions. Employing a density functional tight-binding approach and starting from ordered multi-shell fullerenes, we develop realistic models of highly disordered nano-onions comprised of nanometer-scale graphitic flakes. We find that multiple parameters such as flake size, edge structure and substituent groups can give rise to in-gap metallic states, effectively closing the HOMO-LUMO gap.

Spin-Dependent Dynamics of Photocarrier Generation in Electrically Detected Nitrogen-Vacancy-Based Quantum Sensing

Electrical detection of nitrogen-vacancy (N-V) centers in diamond is advantageous for developing and integrating quantum information processing devices and quantum sensors and has the potential to achieve a higher collection efficiency than that of optical techniques. However, the mechanism for the electrical detection of N-V spins is not fully understood. In this study, we observe positive contrast in photocurrent detected magnetic resonance (PDMR). Note that negative PDMR contrast is usually observed. To discuss the sign of the PDMR contrast, we numerically analyze the dynamics of photocarrier generation by N-V centers using a seven-level rate model. It is found that the sign of the PDMR contrast depends on the difference in the photocurrent generated from the excited states and the metastable state of N-V centers. Furthermore, we demonstrate ac magnetic field sensing using spin coherence with the PDMR technique. ac magnetic field measurement with the PDMR technique is still challenging because the noise from a fluctuating magnetic environment is greater than the measured signal. Here, we introduce noise suppression using a phase-cycling-based noise-canceling technique. We demonstrate electrically detected ac magnetic field sensing with a sensitivity of 29 nT ${\mathrm{Hz}}^{\ensuremath{-}1/2}$. Finally, we discuss sensitivity enhancement based on the proposed model.

Diffraction grating via position dependent incident light in a closed-loop quantum system

We have proposed a new model for controlling the electromagnetically induced grating in a three-level closed-loop quantum system. The quantum system interacts with three-laser fields which one of them is the weak probe light and two of them are strong driving and coupling laser fields. These two strong laser fields have standing wave (SW) patterns in two x and y directions. This makes that the absorption and dispersion properties of the media change periodically which leads to diffraction of the transmitted light. We have shown that because of the closed-loop configuration of the quantum system the relative phase between applied lights can affect the diffraction grating pattern of the transmitted light. We have also discussed the Rabi-frequency effect of the driving and coupling lights on the different orders of the grating. We have shown that our proposed model may be used as a new tool for developing the future quantum information processing devices.

Programmable Polariton Topological Insulators All-Optically Controlled by the Stark Effect.

Efficiently and flexibly manipulating unidirectional edge states is key to developing topological insulators as functional devices. In this work, we propose an all-optical method that utilizes the valley-selective optical Stark effect to realize programmable topological insulators. We pattern a two-dimensional honeycomb structure in an exciton-polariton platform resulting from a strong light-matter coupling in a monolayer transition metal dichalcogenide. The optical Stark effect is induced to generate a pseudo magnetic field, combined with spin-orbit coupling to form the topological one-way edge states of the polariton. On account of the ultrafast switching speed and precisely spatial controllability of the optical Stark effect, two applications, i.e., ports ratio tunable polariton splitter and programmable polariton router, were demonstrated, showing designable and rewritable functionality of all-optically controllable polariton topological insulators. This study paves the way to robustly and intelligently control/form polaritonic and spintronic devices for future classical and quantum information processing and application.

Suppressing Decoherence in Quantum State Transfer with Unitary Operations

Decoherence is the fundamental obstacle limiting the performance of quantum information processing devices. The problem of transmitting a quantum state (known or unknown) from one place to another is of great interest in this context. In this work, by following the recent theoretical proposal, we study an application of quantum state-dependent pre- and post-processing unitary operations for protecting the given (multi-qubit) quantum state against the effect of decoherence acting on all qubits. We observe the increase in the fidelity of the output quantum state both in a quantum emulation experiment, where all protecting unitaries are perfect, and in a real experiment with a cloud-accessible quantum processor, where protecting unitaries themselves are affected by the noise. We expect the considered approach to be useful for analyzing capabilities of quantum information processing devices in transmitting known quantum states. We also demonstrate the applicability of the developed approach for suppressing decoherence in the process of distributing a two-qubit state over remote physical qubits of a quantum processor.

Transfer of Orbital Angular Momentum of Light Using Autler-Townes Splitting

We propose a scheme to exchange optical vortices beyond electromagnetically induced transparency (EIT) but based on four-wave mixing (FWM) in a five-level atomic system consisting of two Λ subsystems linked via a weak driving field. When the laser fields are strong enough, the quantum interference responsible for the EIT in each Λ subsystem is washed out, giving rise to the Autler-Townes splitting (ATS). When only one of the control fields carries an optical vortex, it is shown that the generated FWM field obtains the vorticity of the vortex control. We distinguish between three different regimes, i.e., a pure EIT, a joint EIT-ATS, and a dual-ATS, where the optical angular momentum (OAM) translation can take place. Elaborating on the distinction between three regimes through numerical analysis, we find that the maximum energy conversion efficiency is obtained in the joint EIT-ATS and dual-ATS regimes. The latter is more favorable as the absorption losses vanish as the beam propagates into the atomic cloud. The results may find applications in the implementation of high-efficient frequency and OAM conversion devices for quantum information processing.

A Wideband Balun-Based Microwave Device for Quantum Information Processing With Nitrogen–Vacancy Centers in Diamond

We present a wideband balun-based microwave device for quantum manipulation of nitrogen-vacancy centers in diamond. The device employs a balun with multi-section Chebyshev impedance transformer to realize the conversion from the unbalanced feed line to the balanced feed line and ensures impedance matching. A bandwidth of 2.2 GHz with the maximum resonance frequency up to 4.4 GHz has been realized, which is important for multi-qubit quantum control of the nitrogen-vacancy centers. We also carry out optically detected magnetic resonance to observe Rabi oscillations and calibrate the strength of the microwave magnetic field generated by the microwave device. With an input power of 0.5 W, the Rabi frequencies can reach 6.17 MHz and 6.06 MHz for resonant microwave at 1.40 GHz and 4.34 GHz, respectively. Combining with large bandwidth and excellent magnetic field homogeneity, the device can be applied in solid-state quantum information processing.

Selectively Addressing Plasmonic Modes and Excitonic States in a Nanocavity Hosting a Quantum Emitter.

Controlling the interaction between the excitonic states of a quantum emitter and the plasmonic modes of a nanocavity is key for the development of quantum information processing devices. In this Letter we demonstrate that the tunnel electroluminescence of electrically insulated C60 nanocrystals enclosed in the plasmonic nanocavity at the junction of a scanning tunneling microscope can be switched from a broad emission spectrum, revealing the plasmonic modes of the cavity, to a narrow band emission, displaying only the excitonic states of the C60 molecules by changing the bias voltage applied to the junction. Interestingly, excitonic emission dominates the spectra in the high-voltage region in which the simultaneously acquired inelastic rate is low, demonstrating that the excitons cannot be created by an inelastic tunnel process. These results point toward new possible mechanisms for tunnel electroluminescence of quantum emitters and offer new avenues to develop electrically tunable nanoscale light sources.

Selective Area Growth of PbTe Nanowire Networks on InP

AbstractHybrid semiconductor–superconductor nanowires are promising candidates as quantum information processing devices. The need for scalability and complex designs calls for the development of selective area growth techniques. Here, the growth of large scale lead telluride (PbTe) networks is introduced by molecular beam epitaxy. The group IV‐VI lead‐salt semiconductor is an attractive material choice due to its large dielectric constant, strong spin‐orbit coupling, and high carrier mobility. A crystal re‐orientation process during the initial growth stages leads to single crystalline nanowire networks despite a large lattice mismatch, different crystal structure, and diverging thermal expansion coefficient to the indium phosphide (InP) substrate. The high quality of the resulting material is confirmed by Hall bar measurements, indicating mobilities up to 5600 cm2 (Vs)−1, and Aharonov–Bohm experiments, indicating a low‐temperature phase coherence length exceeding 21 µm. Together, these properties show the high potential of the system as a basis for topological networks.

Classical-to-quantum transition in multimode nonlinear systems with strong photon-photon coupling

With advanced micro- and nano-photonic structures, the vacuum photon-photon coupling rate is anticipated to approach the intrinsic loss rate and lead to unconventional quantum effects. Here, we investigate the classical-to-quantum transition of such photonic nonlinear systems using the quantum cluster-expansion method, which addresses the computational challenge in tracking large photon number states of the fundamental and harmonic optical fields involved in the second harmonic generation process. Compared to the mean-field approximation used in weak coupling limit, the quantum cluster-expansion method solves multimode dynamics efficiently and reveals the quantum behaviors of optical parametric oscillations around the threshold. This work presents a universal tool to study quantum dynamics of multimode systems and explore the nonlinear photonic devices for continuous-variable quantum information processing.

Topologically protected optomechanically induced transparency in a one-dimensional optomechanical array

We investigate the optomechanically induced transparency (OMIT) in an optomechanical lattice. By controlling the frequency of the external drivings in a periodic manner, the optomechanical lattice can be regarded as a Su-Schrieffer-Heeger model. By calculating the local photon density of states for the system, we investigate the response of the system to a weak probe field. In the nondeep topological nontrivial phase, we find that the system has two nondegenerate edge modes due to the finite size of the system. In this regime, a narrow transparency window of the probe field, which is much narrower than the scale set by photon decay, can be observed due to the destructive interference of the probe field absorption paths induced by the two nondegenerate edge modes. In the deep topological nontrivial phase, the two edge modes become degenerate and the narrow transparency window changes into a wide absorption window. The OMIT of the optomechanical array can also be observed in the presence of large disorders of the many-photon optomechanical couplings. Our work generalizes the OMIT of a single optomechanical cavity to a topological optomechanical system and might have potential applications in quantum information processing and quantum optical devices.

Modulation of topological phase transitions and topological quantum states in one-dimensional superconducting transmission line cavities lattice

We propose a theoretical scheme for a one-dimensional lattice based on a superconducting quantum circuit system consisting of two types of superconducting microwave cavities, the interaction between nearest-neighbor and next-nearest-neighbor unit cells that can be adjusted by the magnetic flux, the system can obtain the collective dynamic evolution and study the topological properties of the system.First, we investigate the energy spectrum and edge states of the odd-even lattice size and find that the odd-even lattice number affects the topological properties of the system. Furthermore, considering the next-nearest interactions, it is found that there are constraints on the next-nearest interactions, which can be tuned to study the topological phase transitions of the system and the transfer of topological quantum states.In addition, considering the influence of defects on topological properties, it is found that the defect potential energy is small, the system energy band is stable, the edge states remain unchanged, and the energy spectrum fluctuation is small and distinguishable. Conversely, the energy band distribution is destroyed, it will become disordered and chaotic. The research results can design some new quantum devices for quantum optics and quantum information processing.

Full-Wave Methodology to Compute the Spontaneous Emission Rate of a Transmon Qubit

The spontaneous emission rate (SER) is an important figure of merit for any quantum bit (qubit), as it can play a significant role in the control and decoherence of the qubit. As a result, accurately characterizing the SER for practical devices is an important step in the design of quantum information processing devices. Here, we specifically focus on the experimentally popular platform of a transmon qubit, which is a kind of superconducting circuit qubit. Despite the importance of understanding the SER of these qubits, it is often determined using approximate circuit models or is inferred from measurements on a fabricated device. To improve the accuracy of predictions in the design process, it is better to use full-wave numerical methods that can make a minimal number of approximations in the description of practical systems. In this work, we show how this can be done with a recently developed field-based description of transmon qubits coupled to an electromagnetic environment. We validate our model by computing the SER for devices similar to those found in the literature that have been well-characterized experimentally. We further cross-validate our results by comparing them to simplified lumped element circuit and transmission line models as appropriate.