Quantum Efficiency Of Devices Research Articles

High-Performance, High-Resolution Quantum Dot Light-Emitting Diodes with Self-Assembly Single-Molecular Interface Modification.

With the development of near-eye displays, the demands for display resolution and performance are increasing. Quantum dot performance is virtually independent of pixel size, making it an efficient way to display ultrahigh resolution. However, the low efficiency of high-resolution quantum dot devices has been an urgent technical bottleneck to be solved. Here, we constructed a dense single-molecule modification layer and a leakage current blocking layer for high-resolution devices using self-assembly, thereby realizing ultrahigh-resolution, high-efficiency, and stable high-resolution quantum dot light-emitting diodes (QLEDs). The peak external quantum efficiencies of the red devices are 24.68% (8759 PPI) and 19.54% (26075 PPI), respectively, with an exceptional long lifetime (T95@1000 nit) up to 4871 h. In addition, we explored the feasibility of this modification strategy on non-Cd-based quantum dots. In conclusion, our strategy effectively improves the performance of high-resolution devices and provides a superior approach for realizing near-eye display applications.

Enhancing the Efficiency of Flexible, Large-Area, ITO-Free Organic Photovoltaic Devices.

The development of flexible ITO-free devices is crucial for the industrial advancement of organic photovoltaic (OPV) technology. Here, a novel ITO-free device architecture is proposed, and ITO-free OPV devices are realized on glass substrates with performance comparable to that of ITO-based devices. It is also demonstrated that the performance of ITO-free devices on polyethylene terephthalate (PET) substrates is limited due to the higher surface roughness of PET, leading to high voltage losses, low device quantum efficiency, and high device leakage current. To address the issue of high roughness on the PET surface, a polyimide (PI) modification strategy is developed and the PI-modified PET is employed as the substrate to construct flexible ITO-free OPV devices and large-area modules with an active area of up to 16.5cm2. This approach leads to decreased trap-assisted recombination losses, enhanced exciton dissociation efficiency, and a reduced density of pinholes in flexible OPV devices, resulting in improved photovoltaic performance under both strong and weak illumination conditions. The outcomes of this work are expected to advance the industrial development of flexible organic photovoltaic technology.

Saturated Red Electrophosphorescence From Novel Pyridinopyridazine‐Based Iridium Complexes

ABSTRACTTwo isomeric homoleptic Ir(III) complexes with pyridinopyridazine derivative ligands were prepared first. Due to its stronger intramolecular hydrogen bonding and intermolecular interactions, complex IrPPM has a higher decomposition temperature (5% weight loss) of 387°C than IrPPP (354°C). They have similar UV–Vis absorption and photoluminescence spectra in CH2Cl2 solution with photoluminescence peaks around 635–636 nm. However, the emission peak of IrPPM in neat powder obviously red‐shifted to 652 nm, and that of IrPPP blue‐shifted to 626 nm. Simultaneously, complex IrPPM has a lower photoluminescence quantum yield of 0.3 than IrPPP (0.5). Efficient saturated red OLED devices are developed with Commission Internationale de L'Eclairage color coordinates of (0.67, 0.32) and (0.66, 0.32), respectively. The maximum external quantum efficiencies of both devices exceed 11%. These results demonstrate the great potential of pyridinopyridazine derivatives for developing new iridium complexes for OLED applications.

Efficient Dual‐Functional Quantum Dot Light‐Emitting Diodes with UV‐Vis‐NIR Broad‐Spectrum Photosensitivity

AbstractPhotosensitive quantum dot light‐emitting diodes (PSQLEDs) possess the dual capabilities of generating and detecting light signals, which is of significant importance for the development of miniaturized and integrated optoelectronic devices. However, the state‐of‐the‐art PSQLEDs can only detect light signals within a certain wavelength range, and require switching between the two functions under different bias voltage directions. In this work, The use of a ZnO/quantum dots (QDs)/ZnO multilayer (ZQZ ML) architecture as both the electron transport layer and the photosensitive layer is pioneered. The QDs in this structure are composed of narrow‐bandgap lead sulfide QDs and wide‐bandgap cadmium selenide QDs, successfully realizing a unique PSQLED device with C photosensitive characteristics. As a result, the as‐fabricated device can respond to illumination from 365 to 1300 nm, and the device achieves a photoresponse rate of 20.9 mA W−1 in self‐powered mode to UV light. After UV light irradiation, the maximum external quantum efficiency and maximum luminance of device reached 11.8% and 64,549 cd m−2, respectively. The device shows a record‐high luminance ON/OFF ratio of 5500%, which is beneficial for high contrast and accurate information display.

Efficient Quasi-Two-Dimensional Perovskite Light-Emitting Diodes Achieved through the Passivation of Multi-Fluorine Phosphate Molecules.

The surface morphology of perovskite films significantly influences the performance of perovskite light-emitting diodes (PeLEDs). However, the thin perovskite thickness (~10 nm) results in low surface coverage on the substrate, limiting the improvement of photoelectric performance. Here, we propose a molecular additive strategy that employs pentafluorophenyl diphenylphosphinate (FDPP) molecules as additives. P=O and Pentafluorophenyl (5F) on FDPP can coordinate with Pb2+ to slow the crystallization process of perovskite and enhance surface coverage. Moreover, FDPP reduces the defect density of perovskite and enhances the crystalline quality. The maximum brightness, power efficiency (PE), and external quantum efficiency (EQE) of the optimal device reached 24,230 cd m-2, 82.73 lm W-1, and 21.06%, respectively. The device maintains an EQE of 19.79% at 1000 cd m-2 and the stability is further enhanced. This study further extends the applicability of P=O-based additives.

Enhancing the efficiency of InGaN-based micro-LEDs using indium tin oxide p-electrodes.

Here, we demonstrate replacing opaque Cr/Pt/Au metal p-electrodes with transparent indium tin oxide (ITO) p-electrodes to increase the light output of InGaN-based micro-light-emitting diodes (micro-LEDs). ITO p-electrodes exhibit high transmittance of ∼ 80% across the visible spectrum and low resistivity, while metal p-electrodes exhibit negligible transmittance and significant absorption. The 20 × 20 µm2 and 50 × 50 µm2 green micro-LED arrays with ITO p-electrodes yield 1.25 and 1.20 times improvement in light output power compared to conventional metal p-electrodes. The on-wafer external quantum efficiency (EQE) of ITO p-electrode devices reach 7.36% and 7.35% at a current density of ≤ 1.6 A/cm2 for 20 × 20 µm2 and 50 × 50 µm2 arrays, while the on-wafer EQE of metal-based ones remain at 5.98% and 6.16%, respectively. This work opens a straightforward yet universal strategy for enhancing micro-LEDs' performance, as ITO p-electrodes can be seamlessly integrated into red, green, and blue micro-LED configurations.

Hot Exciton versus Hot Exciplex TADF Mechanism – Effect of the Donor‐Acceptor Functionalization Pattern on Anthracene‐based Emitters

Hot exciton emitters based on 9,10‐substituted anthracenes are a well‐investigated class of molecules featuring thermally activated delayed fluorescence (TADF). TADF converts triplet excitons into singlet excitons and improve the internal quantum efficiency of electroluminescent devices to performance beyond the limit of spin‐statistics of conventional emitters. In this paper, we compare different 1,8‐functionalized donor/acceptor‐substituted anthracenes and compare these to established 9,10‐functionalized hot exciton emitters. Interestingly, our new 1,8‐substituted anthracenes make use of a beneficial hot exciplex pathway, resulting in improved emission characteristics and higher photoluminescence quantum yield.

Modeling the electroluminescence of atomic wires from quantum dynamics simulations.

Static and time-dependent quantum-mechanical approaches have been employed in the literature to characterize the physics of light-emitting molecules and nanostructures. However, the electromagnetic emission induced by an input current has remained beyond the realm of molecular simulations. This is the challenge addressed here with the help of an equation of motion for the density matrix coupled to a photon bath based on a Redfield formulation. This equation is evolved within the framework of the driven-Liouville von Neumann approach, which incorporates open boundaries by introducing an applied bias and a circulating current. The dissipated electromagnetic power can be computed in this context from the time derivative of the energy. This scheme is applied in combination with a self-consistent tight-binding Hamiltonian to investigate the effects of bias and molecular size on the electroluminescence of metallic and semiconducting chains. For the latter, a complex interplay between bias and molecular length is observed: there is an optimal number of atoms that maximizes the emitted power at high voltages but not at low ones. This unanticipated behavior can be understood in terms of the band bending produced along the semiconducting chain, a phenomenon that is captured by the self-consistency of the method. A simple analytical model is proposed that explains the main features revealed by the simulations. The methodology, applied here at a self-consistent tight-binding level but extendable to more sophisticated Hamiltonians such as density functional tight binding and time dependent density functional theory, promises to be helpful for quantifying the power and quantum efficiency of nanoscale electroluminescent devices.

Acceleration of radiative recombination for efficient perovskite LEDs

The increasing demands for more efficient and brighter thin-film light-emitting diodes (LEDs) in flat-panel display and solid-state lighting applications have promoted research into three-dimensional (3D) perovskites. These materials exhibit high charge mobilities and low quantum efficiency droop1–6, making them promising candidates for achieving efficient LEDs with enhanced brightness. To improve the efficiency of LEDs, it is crucial to minimize nonradiative recombination while promoting radiative recombination. Various passivation strategies have been used to reduce defect densities in 3D perovskite films, approaching levels close to those of single crystals3. However, the slow radiative (bimolecular) recombination has limited the photoluminescence quantum efficiencies (PLQEs) of 3D perovskites to less than 80% (refs. 1,3), resulting in external quantum efficiencies (EQEs) of LED devices of less than 25%. Here we present a dual-additive crystallization method that enables the formation of highly efficient 3D perovskites, achieving an exceptional PLQE of 96%. This approach promotes the formation of tetragonal FAPbI3 perovskite, known for its high exciton binding energy, which effectively accelerates the radiative recombination. As a result, we achieve perovskite LEDs with a record peak EQE of 32.0%, with the efficiency remaining greater than 30.0% even at a high current density of 100 mA cm−2. These findings provide valuable insights for advancing the development of high-efficiency and high-brightness perovskite LEDs.

Application of carbazole derivatives as a multifunctional material for organic light-emitting devices

The object of research is newly synthesized carbazole-derived compounds and organic light-emitting structures based on them. The problem lies in the complex solution of scientific and technical problems of improving the characteristics and stability of organic light-emitting diodes (OLEDs), namely improving the brightness and energy-efficient parameters. Organic light-emitting structures of blue, blue, and green radiation with color coordinates were formed by the thermovacuum sputtering method and the solution deposition method. The turn-on voltage of the white OLED is 6 V, the maximum brightness of the light-emitting structures was 10,000 cd/m2. The devices demonstrated a sufficiently high external quantum efficiency of 5 % to 7 %. This paper reports the multifunctional application of a simple donor-acceptor organic compound, as active and host material in the emission layer of organic light emitting devices. Em1 has been used as active components in OLEDs, where Em1 is the guest emitter (Device A), the acceptor part of the excited emitter (Device B) and the host matrix of the CdSeS/ZnS alloy quantum dot. At least four different OLEDs have been designed and characterized where Em1 plays the role of the guest emitter (Device C). The external quantum efficiencies of devices A–C are characterized by values common to pure fluorescent OLEDs (up to 5 % of the theoretical limit), but these devices sustain low-efficiency roll-off of electroluminescence over a wide range of current densities. Organic light-emitting diodes based on carbazole-derived compounds, due to their color characteristics, are promising candidates for use in the latest lighting systems. A separate advantage of the data light-emitting structures is a multifunctional application of one compound for different types of light-emitting structures. In addition, organic LEDs on based on carbazole-derived compounds have low energy consumption and are environmentally friendly due to the absence of toxic substances in their architecture, which creates prerequisites for saving energy resources and reducing the industrial burden on the environment.

Controlling Interfacial Amidation Reaction Rate to Regulate Crystal Growth toward High-Performance FAPbBr3-Based Inverted Light-Emitting Diodes.

Controlling interfacial reactions is critical for zinc oxide (ZnO)-based inverted perovskite light-emitting diodes (PeLEDs), boosting the external quantum efficiency (EQE) of the near-infrared device to above 20%. However, violent interfacial reactions between the bromine-based perovskites and ZnO-based films severely limit the performance of inverted green PeLEDs, whose efficiency and stability lag far behind those of their near-infrared counterparts. Here, a controllable interfacial amidation between the bromine-based perovskites and magnesium-doped ZnO (ZnMgO) film utilizing caprylyl sulfobetaine (SFB) is realized. The SFB molecules strongly interact with formamidinium bromide, decelerating the amidation reaction between formamidinium and carboxylate groups on the ZnMgO film, thus regulating the crystallization of FAPbBr3. Combined with the passivation of benzylamine, a FAPbBr3 bulk film directly deposited on a ZnMgO substrate with single-crystal characteristics is obtained, exhibiting a high photoluminescence quantum yield of above 80%. The resultant PeLEDs demonstrate a peak EQE of exceeding 20% at a high luminance of 120,000 cd m-2 and a half lifetime of 26 min at 11,000 cd m-2, representing the state-of-the-art inverted green electroluminescence. This work resolves the crucial issues of violent interfacial reactions and provides a strategy toward inverted green PeLEDs with outstanding performance.

High efficiency quantum dot light-emitting diodes with femtosecond laser post-treatment

Quantum dot light-emitting diodes (QLEDs), as an emerging display technology, have garnered widespread attention due to their excellent color rendering, high efficiency, and long lifespan. However, the inherent differences in the properties of charge transport layer materials inevitably lead to charge injection imbalances and low device performance. Herein, we developed a simple technique by using femtosecond laser scanning over the QLED devices. The results indicate that scanning with a femtosecond laser improves the conductivity of the hole transport layer and increases the external quantum efficiency of the QLED devices. Our work provides an effective route for realizing high performance QLED devices with efficient post-treatment.

Photo‐Induced Electrical Gating with the Inserting of an Interfacial Carrier Blocking Layer for Organic/Graphene Phototransistors

AbstractAlthough ultrahigh photoconductive gain is achieved in organic semiconductor‐sensitized graphene phototransistors, the response speed is limited by the photo‐induced carrier injection at the organic/graphene interface. In this work, an insulating hexagonal boron nitride layer is inserted between the organic heterostructure and graphene to block the interfacial carrier transport. Above the h‐BN layer, the organic heterostructure is adopted as the light‐absorbing layer, and the photoresponse of graphene is realized through electrical gating of the atop h‐BN dielectric layer, by the accumulated carriers in the organic heterostructure. Under this “photo‐induced electrical gating” mechanism, the recombination of nonequilibrium carriers takes place only within the organic heterostructure. Furthermore, monolayer perylene‐3,4,9,10‐tetracarboxylic dianhydride (PTCDA) is deposited on graphene before transfer of the h‐BN, by which the interfacial encapsulated bubbles are effectively reduced. As a step further, the trap states are pre‐filled with background light illumination, then the carrier recombination follows the band‐to‐band pathway. Finally, the response time of the organic/h‐BN/graphene phototransistor is reduced to 7.15 ms, and a high photoresponsivity is achieved even though the carrier multiplication is sacrificed, which is reconciled by the improvement of the device quantum efficiency.

Impact of Mo doping on photo-sensing properties of ZnO thin films for advanced photodetection applications

This work explored the impact of Mo-doping on the structural, optical, photophysical, and electrical characteristics of ZnO thin films and their potential application to the UV light detection properties was investigated. The hexagonal structure of the films without any impurities or extra phases was confirmed by X-ray diffraction and FT-Raman spectroscopy. The crystallite size reduced from 36 nm to 25 nm with the addition of 3 wt% of Mo in ZnO. The EDX/SEM e-mapping verified the elemental composition and uniform Mo doping throughout the films. The FESEM images revealed spherical nanoparticles with smaller grains size for higher Mo-doping levels. The absorption spectra were recorded from UV to NIR range, and the bandgap was observed to increase from 3.25 eV for pure ZnO to 3.42 for 3% Mo-doped ZnO sample. The Mo-doped ZnO film showed PL quenching, which indicates charge transfer and suppression of defect sates in the ZnO films via Mo-doping. The time-resolved fluorescence spectra (TRFS) of these films revealed that the carrier lifetime increased from 80 ps for pure ZnO to 144 ps for 3% Mo-doped ZnO thin film. The electrical parameters including resistivity, carrier mobility, concentrations, and sheet resistance of fabricated films were evaluated by Hall-effect measurement. The resistivity and mobility were observed to decrease from 9.33×104 Ω.cm, 55.1 cm2/V.s to 2.03×103 Ω.cm 15.4 cm2/V.s for 3% Mo-doped ZnO thin film, while carrier density increased. The photodetection study demonstrated that the responsivity, detectivity, external quantum efficiency and response time of devices were significantly enhanced with Mo idoping.

Reduced Surface Recombination in Extended-Perimeter LEDs toward Electroluminescent Cooling.

III-V semiconductor light-emitting diodes (LEDs) are a promising candidate for demonstrating electroluminescent cooling. However, exceptionally high internal quantum efficiency designs are paramount to achieving this goal. A significant loss mechanism preventing unity internal quantum efficiency in GaAs-based devices is nonradiative surface recombination at the perimeter sidewall. To address this issue, an unconventional LED design is presented, in which the distance from the central current injection area to the device's perimeter is extended while maintaining a constant front contact grid size. This approach effectively moves the perimeter beyond the lateral spread of current at an operating current density of 101-102 A/cm2. In p-i-n GaAs/InGaP double heterojunction LEDs fabricated with varying sizes and perimeter extensions, a 19% relative increase in external quantum efficiency is achieved by extending the perimeter-to-contact distance from 25 to 250 μm for a front contact grid size of 450 × 450 μm2. Utilizing an in-house developed Photon Dynamics model, the corresponding relative increase in internal quantum efficiency is estimated to be 5%. These results are ascribed to a significant reduction in perimeter recombination due to a lower perimeter-to-surface area (P/A) ratio. However, in contrast to lowering the P/A ratio by increasing the front contact grid size of LEDs, the present method enables these improvements without affecting the required maximum current density in the microscopic active LED area under the front contact grid. These findings aid in the advancement of electroluminescent cooling in LEDs and could prove useful in other dedicated semiconductor devices where perimeter recombination is limiting.

Enhanced luminescence efficiency in Eu-doped GaN superlattice structures revealed by terahertz emission spectroscopy

Eu-doped Gallium nitride (GaN) is a promising candidate for GaN-based red light-emitting diodes, which are needed for future micro-display technologies. Introducing a superlattice structure comprised of alternating undoped and Eu-doped GaN layers has been observed to lead to an order-of-magnitude increase in output power; however, the underlying mechanism remains unknown. Here, we explore the optical and electrical properties of these superlattice structures utilizing terahertz emission spectroscopy. We find that ~0.1% Eu doping reduces the bandgap of GaN by ~40 meV and increases the index of refraction by ~20%, which would result in potential barriers and carrier confinement within a superlattice structure. To confirm the presence of these potential barriers, we explored the temperature dependence of the terahertz emission, which was used to estimate the barrier potentials. The result revealed that even a dilutely doped superlattice structure induces significant confinement for carriers, enhancing carrier recombination within the Eu-doped regions. Such an enhancement would improve the external quantum efficiency in the Eu-doped devices. We argue that the benefits of the superlattice structure are not limited to Eu-doped GaN, which provides a roadmap for enhanced optoelectronic functionalities in all rare-earth-doped semiconductor systems.

193 nm laser annealing on p-GaN with enhanced hole concentration and wall-plug-efficiency in deep ultraviolet LED

The high acceptor ionization energy and, thus, low carrier concentration in p-type III-nitride have widely been recognized as the bottleneck preventing the development of high-efficiency light-emitting-diodes (LEDs). In this contribution, the influences of 193 nm pulsed laser annealing on the structure, electrical, and optical properties of p-type GaN were systematically analyzed. The hole concentration of p-GaN first increases and then decreases with increasing laser fluence, regardless of post-growth thermal annealing. The effective dopant activation due to laser annealing can be attributed to the dissociation of Mg–H complexes during the treatment. Laser-annealed p-GaN was utilized in a 280 nm deep ultraviolet LED. A maximum of 1.47 times higher wall-plug-efficiency enhancement factor was obtained compared to that without laser annealing, demonstrating that 193 nm laser annealing plays a decisive role in the boosting of quantum efficiency of optoelectronic devices.

Enhanced performance of solution processed OLED devices based on PFO induced TADF emission layers

The internal quantum efficiency (IQE) of the OLED devices based on thermally activated delayed fluorescence (TADF) materials was thought to nearly 100 % by assuming the light outcoupling efficiency of 20–25 %. However, the external quantum efficiency (EQE) is still limited by the ηout. One crucial factor that affects the light output coupling efficiency is the molecular transition dipole moment of the emission molecule. In this study, poly(9,9-di-n-octylfluorenyl-2,7-diyl) (PFO) was chosen as an orientation inducer to enhance the horizontal orientation ratio of a TADF emitter, 2-Phenyl-4,6-bis[4-(9,9-dimethyl-9,10-dihydroacridine) phenyl] pyrimidine (DMAc-PPM), prepared using a solution method. With doping PFO in weight ratios ranging from 1 wt% to 9 wt%, the orientation factor of TADF emitter increased, which testified the inducing function of PFO. The TADF-OLED devices using PFO as an inducer exhibited an EQE increasing with the PFO doping weight ratio. The maximum EQE of 7.3 % was achieved at the doping weight ratio of 7 wt%, which increase about 1.7 times compared to the device without the PFO inducer. This observed variation of EQE differs from the trend observed in maximum luminance intensity. The increase of EQE can be attributed to the improvement of light output efficiency caused by the variation of orientation factor. The lower carrier mobility lead to the lower maximum luminance intensity. The synergistic effect of light output efficiency and carrier mobility enhanced the performance of OLED devices.

Towards high photoresponse of perovskite nanowire/copper phthalocyanine heterostructured photodetector

One-dimensional nanowire structures composed of perovskite are widely recognized for their exceptional optoelectronic performance and mechanical properties, making them a popular area of investigation in photodetection research. In this work, a perovskite nanowire/copper phthalocyanine heterojunction-based photodetector was fabricated, which exhibits high photoresponse in the visible-near-infrared region. The incorporation of a heterojunction significantly enhanced the photoelectric performance. Specifically, the photoresponsivity and external quantum efficiency of the nanowire-based device were elevated from 58.5 A W−1 and 1.35 × 104% to 84.5 A W−1 and 1.97 × 104% at 532 nm, respectively. The enhanced photoresponse of the heterojunction device can be attributed to the unique microstructure of nanowire arrays. The wrapping of the nanowires by copper phthalocyanine forms heterojunctions with a larger dissociation area, which facilitated exciton dissociation and enhanced device performance. This work provides a promising example for optimizing the performance of nanowire devices.

Light management for perovskite light-emitting diodes.

Perovskite light-emitting diodes (LEDs) have reached external quantum efficiencies of over 20% for various colours, showing great potential for display and lighting applications. Despite the internal quantum efficiencies of the best-performing devices already approaching unity, around 80% of the internally generated photons are trapped in the devices and lose energy through a variety of lossy channels. Significant opportunities for improving efficiency and maximizing photon extraction lie in the effective management of light. In this Review we analyse light management strategies based on the intrinsic optical properties of the perovskite materials and the extrinsic properties related to device structures. These approaches should allow the external quantum efficiencies of perovskite LEDs to substantially exceed the conventional limits of planar organic LED devices. By revisiting lessons learned from organic LEDs and perovskite solar cells, we highlight possible directions of future research towards perovskite LEDs with ultrahigh efficiencies.