Quantum Dot Superlattice Structures Research Articles

Stable and Ultrafast Blue Cavity-Enhanced Superfluorescence in Mixed Halide Perovskites.

Cavity-enhanced superfluorescence (CESF) in quantum dot (QD) system is an ultrafast and intense lasing generated by combination of quantum coupling effect and optically stimulated amplification effect, which can provide a new idea for realizing high quality blue light sources and address the limitation of conventional inefficient blue light sources. Modifying halide composition is a straightforward method to achieve blue emission in perovskite QD system. However, the spectral instability introduced by photoinduced halide phase segregation and low coupling efficiency between QDs and optical cavities make it challenging to achieve stable blue CESF in such halide-doped QD system. Herein, long-range-ordered, densely packed CsPbBr2 Cl QD-assembled superlattice microcavities in which the two core issues can be appropriately addressed are developed. The QD superlattice structure facilitates excitonic delocalization to decrease exciton-phonon coupling, thus alleviating photoinduced phase segregation. By combination of theoretical analysis and temperature-dependent photoluminescence (PL) measurements, the underlying photoinduced phase segregation mitigation mechanism in mixed halide superlattices is clarified. Based on the CsPbBr2 Cl QD superlattices with regularly geometrical structures, in which the gain medium can be strongly coupled to the naturally formed microcavity, stable and ultrafast (3ps) blue CESF with excellent optical performance (threshold ≈33 µJ cm-2 , quality factor ≈1900) is realized.

Optical properties of InN/GaN quantum dot superlattice by changing dot size and interdot spacing

Abstract InN-based III nitride quantum dot (QD) technology has attracted much attention for extended potential applications in photonic devices covering a broad spectrum compared to conventional semiconductors. In this research we have investigated electronic transitions in InN/GaN QD super-lattice structure (QDSL) from valence band (VB) to intermediate band (IB) and from IB to conduction band (CB), which cause the inter and intra band photonic absorption, leading to higher photo-generated current. The ground state energy, absorption coefficient and hence the overall device efficiency dependence on position and width of QDSL have been calculated. The time-independent Schrodinger equation with effective mass approximation in three dimensions is resolved by using Kronig-Penny approximation. The ground state energy is E0 = 1.29 eV, first excited state energy is E1 = 1.9 eV and second excited state energy is E2 = 2.4 eV in a period up to 10 QD layers. Range of transition energy is 197–1415 meV between VB and IB and CB, for which absorption coefficient is 3.5 × 105 µm−1.

Optical properties of InAs/GaAs quantum dot superlattice structures

Quantum dot (QD) structure has potential applications in modern highly efficient optoelectronic devices due to their band-tuning. The device dimensions have been miniatured with increased efficiencies by virtue of this discovery. In this research, we have presented modified analytical and simulation results of InAs/GaAs QD superlattice (QDSL). We have applied tight binding model for the investigation of ground state energies using timeindependent Schrödinger equation (SE) with effective mass approximation. It has been investigated that the electron energies are confined due to wave function delocalization in closely coupled QD structures. The minimum ground state energy can be obtained by increasing the periodicity and decreasing the barrier layer thickness. We have calculated electronics and optical properties which includes ground state energies, transition energies, density of states (DOS), absorption coefficient and refractive index, which can be tuned by structure modification. In our results, the minimum ground state energy of QDSL is achieved to be 0.25 eV with a maximum period of 10 QDs. The minimum band to band and band to continuum transition energies are 63 meV and 130 meV with 2 nm barrier layer thickness respectively. The absorption coefficient of our proposed QDSL model is found to be maximum 1.2 × 104 cm−1 and can be used for highly sensitive infrared detector and high efficiency solar cells.

Control of phonon transport by the formation of the Al2O3 interlayer in Al2O3-ZnO superlattice thin films and their in-plane thermoelectric energy generator performance.

Recently, significant progress has been made in increasing the figure-of-merit (ZT) of various nanostructured materials, including thin-film and quantum dot superlattice structures. Studies have focused on the size reduction and control of the surface or interface of nanostructured materials since these approaches enhance the thermopower and phonon scattering in quantum and superlattice structures. Currently, bismuth-tellurium-based semiconductor materials are widely employed for thermoelectric (TE) devices such as TE energy generators and coolers, in addition to other sensors, for use at temperatures under 400 K. However, new and promising TE materials with enhanced TE performance, including doped zinc oxide (ZnO) multilayer or superlattice thin films, are also required for designing solid-state TE power generating devices with the maximum output power density and for investigating the physics of in-plane TE generators. Herein, we report the growth of Al2O3/ZnO (AO/ZnO) superlattice thin films, which were prepared by atomic layer deposition (ALD), and the evaluation of their electrical and TE properties. All the in-plane TE properties, including the Seebeck coefficient (S), electrical conductivity (σ), and thermal conductivity (κ), of the AO/ZnO superlattice (with a 0.82 nm-thick AO layer) and AO/ZnO films (with a 0.13 nm-thick AO layer) were evaluated in the temperature range 40-300 K, and the measured S, σ, and κ were -62.4 and -17.5 μV K-1, 113 and 847 (Ω cm)-1, and 0.96 and 1.04 W m-1 K-1, respectively, at 300 K. Consequently, the in-plane TE ZT factor of AO/ZnO superlattice films was found to be ∼0.014, which is approximately two times more than that of AO/ZnO films (ZT of ∼0.007) at 300 K. Furthermore, the electrical power generation efficiency of the TE energy generator consisting of four couples of n-AO/ZnO superlattice films and p-Bi0.5Sb1.5Te3 (p-BST) thin-film legs on the substrate was demonstrated. Surprisingly, the output power of the 100 nm-thick n-AO/ZnO superlattice film/p-BST TE energy generator was determined to be ∼1.0 nW at a temperature difference of 80 K, corresponding to a significant improvement of ∼130% and ∼220% compared to the 100 nm-thick AO/ZnO film/p-BST and n-BT/p-BST film generators, respectively, owing to the enhancement of the TE properties, including the power factor of the superlattice film.

Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix

We investigate the effects of hydrogen plasma treatment (HPT) on the properties of silicon quantum dot superlattice films. Hydrogen introduced in the films efficiently passivates silicon and carbon dangling bonds at a treatment temperature of approximately 400°C. The total dangling bond density decreases from 1.1 × 1019 cm-3 to 3.7 × 1017 cm-3, which is comparable to the defect density of typical hydrogenated amorphous silicon carbide films. A damaged layer is found to form on the surface by HPT; this layer can be easily removed by reactive ion etching.

Sputter-grown Si quantum dot nanostructures for tandem solar cells

Silicon quantum dot (QD)-based ‘all-silicon’ tandem solar cells have emerged as a promising third generation photovoltaic approach to realize high-efficiency and cost effective solar cells. This approach exploits the quantum confinement effect of silicon QDs embedded in a dielectric matrix to engineer the effective electronic bandgap of a solar cell material. Research work in our group has shown that such a Si QD solar cell can be fabricated by co-sputtering of thin layers of Si-rich dielectric sandwiched between stoichiometric dielectric layers which crystallize to form Si QDs of uniform size on annealing. The Si-richness in the Si-rich layer plays an important role in formation of uniform size and shape. The matrix and barrier layer materials also affect the formation of Si QDs. The bandgap tunability of such Si QD superlattice structures has been clearly demonstrated by photoluminescence and electroluminescence measurements. Doping of Si QD layers has been achieved by impurity incorporation of P, Sb or B in the Si-rich layers. Strong evidence of effective doping has been demonstrated from the enhanced conductivity, from the dopant concentrations extracted from MOS structures and from the formation of rectifying p–n junctions which give an open circuit voltage (Voc) of 492 mV. The doping mechanism is more likely to be modified interface doping rather than direct doping to the Si QDs.

Investigation of Bonding Characteristics Between Si Quantum Dots and a SiO2 Matrix

In order to understand and control the properties of Si quantum dot (QD) superlattice structures (SLS), it is necessary to investigate the bonding between the dots and their matrix and also the structures' crystallinities. In this study, a SiOx matrix system was investigated and analyzed for potential use as an all-silicon multi-junction solar cell. Si QD SLS were prepared by alternating deposition of Si rich SiOx (x = 0.8) and SiO2 layers using RF magnetron co-sputtering and subsequent annealing at temperatures between 800 and 1,100 degrees C under nitrogen ambient. Annealing temperatures and times affected the formation of Si QDs in the SRO film. Raman and FTIR spectra revealed that nanocrystalline Si QDs started to precipitate after annealing at 1,100 degrees C for 1 hour. TEM images clearly showed SRO/SiO2 SLS and Si QDs formation in SRO layers after annealing at 1,100 degrees C for 2 hours. XPS analysis showed that Si-Si and Si-O bonding changes occurred above 1,100 degrees C. XPS analysis also revealed that Si QD SLSs started stabilizing after 2 hours' annealing and approached completion after 3 hours'. The systematic investigation of Si QDs in SiO2 matrices and their properties for solar cell application are presented.

Room-temperature optical absorption in the InAs/GaAs quantum-dot superlattice under an electric field

Electroluminescence and absorption spectra of a ten-layer InAs/GaAs quantum dot (QD) superlattice built in a two-section laser with sections of equal length is experimentally studied at room temperature. The thickness of the GaAs spacer layer between InAs QD layers, determined by transmission electron microscopy, is ∼6 nm. In contrast to tunnel-coupled QDs, QD superlattices amplify the optical polarization intensity and waveguide absorption of the TM mode in comparison with the TE mode. It is found that variations in the multimodal periodic spectrum of differential absorption of the QD superlattice structure are strongly linearly dependent on the applied electric field. Differential absorption spectra exhibit the Wannier-Stark effect in the InAs/GaAs QD superlattice, in which, in the presence of an external electric field, coupling of wave functions of miniband electron states is suppressed and a series of discrete levels called the Wannier-Stark ladder states are formed.

Tunnel current through a miniband in InGaAs quantum dot superlattice solar cells

We report the tunnel current through a miniband in In 0.4Ga 0.6As quantum dot (QD) superlattice solar cells fabricated using molecular beam epitaxy. High-quality and well-aligned In 0.4Ga 0.6As QD superlattice structures with an interdot spacing of 3.5 nm were grown without using a strain balancing technique. 10-stack In 0.4Ga 0.6As QD superlattice solar cells had a high open circuit voltage and good cell characteristics even when the interdot spacing was reduced to 3.5 nm. Moreover, a short-circuit current density increases as the interdot spacing decreases. From the temperature dependence of the external quantum efficiency for QD solar cells with different interdot spacings, we observed the tunnel current through a miniband in QD superlattices with an interdot spacing of 3.5 nm.

Fabrication of Silicon Quantum Dots in Si3N4 Matrix Using RF Magnetron Co-Sputtering

Films consisting of a silicon quantum dot superlattice were fabricated by alternating deposition of silicon rich silicon nitride and <TEX>$Si_3N_4$</TEX> layers using an rf magnetron co-sputtering system. In order to use the silicon quantum dot super lattice structure for third generation multi junction solar cell applications, it is important to control the dot size. Moreover, silicon quantum dots have to be in a regularly spaced array in the dielectric matrix material for in order to allow for effective carrier transport. In this study, therefore, we fabricated silicon quantum dot superlattice films under various conditions and investigated crystallization behavior of the silicon quantum dot super lattice structure. Fourier transform infrared spectroscopy (FTIR) spectra showed an increased intensity of the <TEX>$840\;cm^{-1}$</TEX> peak with increasing annealing temperature due to the increase in the number of Si-N bonds. A more conspicuous characteristic of this process is the increased intensity of the <TEX>$1100\;cm^{-1}$</TEX> peak. This peak was attributed to annealing induced reordering in the films that led to increased Si-<TEX>$N_4$</TEX> bonding. X-ray photoelectron spectroscopy (XPS) analysis showed that peak position was shifted to higher bonding energy as silicon 2p bonding energy changed. This transition is related to the formation of silicon quantum dots. Transmission electron microscopy (TEM) and electron spin resonance (ESR) analysis also confirmed the formation of silicon quantum dots. This study revealed that post annealing at <TEX>$1100^{\circ}C$</TEX> for at least one hour is necessary to precipitate the silicon quantum dots in the <TEX>$SiN_x$</TEX> matrix.

Characteristics of SiO2/Si Quantum Dots Super Lattice Structure Prepared by Magnetron Co-Sputtering Method

Solar cells have been more intensely studied as part of the effort to find alternatives to fossil fuels as power sources. The progression of the first two generations of solar cells has seen a sacrifice of higher efficiency for more economic use of materials. The use of a single junction makes both these types of cells lose power in two major ways: by the non-absorption of incident light of energy below the band gap; and by the dissipation by heat loss of light energy in excess of the band gap. Therefore, multi junction solar cells have been proposed as a solution to this problem. However, the <TEX>$1^{st}$</TEX> and <TEX>$2^{nd}$</TEX> generation solar cells have efficiency limits because a photon makes just one electron-hole pair. Fabrication of all-silicon tandem cells using an Si quantum dot superlattice structure (QD SLS) is one possible suggestion. In this study, an <TEX>$SiO_x$</TEX> matrix system was investigated and analyzed for potential use as an all-silicon multi-junction solar cell. Si quantum dots with a super lattice structure (Si QD SLS) were prepared by alternating deposition of Si rich oxide (SRO; <TEX>$SiO_x$</TEX> (x = 0.8, 1.12)) and <TEX>$SiO_2$</TEX> layers using RF magnetron co-sputtering and subsequent annealing at temperatures between 800 and <TEX>$1,100^{\circ}C$</TEX> under nitrogen ambient. Annealing temperatures and times affected the formation of Si QDs in the SRO film. Fourier transform infrared spectroscopy (FTIR) spectra and x-ray photoelectron spectroscopy (XPS) revealed that nanocrystalline Si QDs started to precipitate after annealing at <TEX>$1,100^{\circ}C$</TEX> for one hour. Transmission electron microscopy (TEM) images clearly showed SRO/<TEX>$SiO_2$</TEX> SLS and Si QDs formation in each 4, 6, and 8 nm SRO layer after annealing at <TEX>$1,100^{\circ}C$</TEX> for two hours. The systematic investigation of precipitation behavior of Si QDs in <TEX>$SiO_2$</TEX> matrices is presented.

Characterization of excitonic features in self-assembled InAs/GaAs quantum dot superlattice structures via surface photovoltage spectroscopy

This work systematically investigates the influence of InAs growth conditions and superlattice parameters on the optical properties of InAs/GaAs quantum dot (QD) superlattice structures grown by molecular beam epitaxy. Using surface photovoltage spectroscopy, one directly obtains the absorption spectra up to the highest confined QD levels at room temperature. Based on photoluminescence measurements at different excitation wavelengths, a feature below the fundamental transition is attributed to the transition from uncoupled dots in the bottom layers. The QD transition energy shift was found to be correlated with material intermixing, driven by enhanced strain strength with the increase of layer number and the decrease of spacer thickness, and the growth rate of InAs. A blueshift observed in low growth rate samples is indicative of greatly enhanced intermixing. For QD superlattices grown at a relatively high deposition rate of InAs, the material intermixing effect is gradually enhanced with increasing layer numbers, which will compensate the electronically coupled effect and will prevent further energy shift toward the lower energy side. The absorption wavelengths in 10- and 30-period InAs/GaAs QD superlattices with higher growth rates are near 1.32 μm. The results suggest that these QD superlattice structures can be used as promising active media for long-wavelength QD lasers operating at room temperature.

Electrical and Thermal Conductivity of Ge ∕ Si Quantum Dot Superlattices

Recently proposed thermoelectric applications of quantum dot superlattices made of different material systems depend crucially on the values of the electrical and thermal conductivities in these nanostructures. We report results of the measurements of Hall mobility and thermal conductivity in a set of quantum dot superlattices. The average measured in-plane Hall mobility for the undoped quantum dot superlattices on a p-type substrate is at room temperature and at 77 K. The average value of the thermal conductivity measured by method is about at room temperature and at 77 K. In the low-temperature region, the thermal conductivity is proportional to . Relatively large values of the carrier mobility and its temperature dependence suggest that the carrier transport in the investigated structures is likely of the band conduction type rather than hopping type. The thermal conductivity of the quantum dot superlattices is strongly reduced and has its peak value shifted toward the high temperatures as compared to the constituent bulk materials. Obtained results can be used for quantum dot superlattice structure optimization for the high-temperature thermoelectric applications.

Quantum dot superlattice thermoelectric materials and devices.

PbSeTe-based quantum dot superlattice structures grown by molecular beam epitaxy have been investigated for applications in thermoelectrics. We demonstrate improved cooling values relative to the conventional bulk (Bi,Sb)2(Se,Te)3 thermoelectric materials using a n-type film in a one-leg thermoelectric device test setup, which cooled the cold junction 43.7 K below the room temperature hot junction temperature of 299.7 K. The typical device consists of a substrate-free, bulk-like (typically 0.1 millimeter in thickness, 10 millimeters in width, and 5 millimeters in length) slab of nanostructured PbSeTe/PbTe as the n-type leg and a metal wire as the p-type leg.

Characterization of (In,Ga,Al)As/GaAs quantum-dot superlattice structures by high-resolution X-ray diffraction

High-resolution X-ray diffraction measurements have been performed on (In,Ga,Al)As/GaAs quantum-dot superlattice structures. We are able to observe up to 31 satellite peaks from 6 periods of a quantum-dot superlattice. Theoretical simulations of the rocking curves based on the Takagi–Taupin equations of dynamical diffraction theory agree well with the experimental data. It is found, however, that to obtain agreement between theory and experiment, the height of the quantum dot, including the wetting layer under the dot, must be used in the simulations; furthermore, the indium composition is apparently reduced from its nominal value. Our results appear to support the notion that for the (In,Ga,Al)As materials system, the dots play an important role in contributing to the diffraction signature from the superlattice structure.

Intraband absorption in the 8–12 μm band from Si-doped vertically aligned InGaAs/GaAs quantum-dot superlattice

Normal-incident infrared absorption in the 8–12-μm-atmospheric spectral window in the InGaAs/GaAs quantum-dot superlattice is observed. Using cross-sectional transmission electron microscopy, we find that the InGaAs quantum dots are perfectly vertically aligned in the growth direction (100). Under the normal incident radiation, a distinct absorption peaked at 9.9 μm is observed. This work indicates the potential of this quantum-dot superlattice structure for use as normal-incident infrared imaging focal arrays application without fabricating grating structures.