We demonstrate the manipulation of electric and magnetic absorption coefficients within the chiral quantum dots (QDs) system. The described setup involves a pair of double chiral quantum dots ((In,Ga)As/GaAs), operating as a four-level quantum system. The system is influenced by control, magnetic, and probe fields, along with the strength of inter-dot tunneling. The investigation demonstrates that the electric and magnetic absorption coefficients are notably affected by the strength of inter-dot tunneling and the intensity of the control field. Significantly, the study reveals a maximum observed electric coefficient of −3.4×1014 and a maximum magnetic coefficient of −3.4×10−12 within the proposed system. Furthermore, the characteristics of the incident light, including divergence angle, group index, and advance/delay time, are intricately influenced by the strength of inter-dot tunneling and the intensity of the control field. The maximum observed divergence angle measures 0.4 rad, with a group index of ±1.3×1020 and an advance/delay time of ±4.0×1010 in the proposed chiral QDs system. This investigation not only contributes to the advancement of quantum dot research but also presents promising prospects for various applications in optoelectronics and quantum information processing.