Mode-locked Quantum Dot Laser Research Articles

12.1 terabit/second data center interconnects using O-band coherent transmission with QD-MLL frequency combs

Most current Data Center Interconnects (DCI) use intensity modulation direct detection (IMDD) configurations due to their low complexity and cost. However, significant scaling challenges allow coherent solutions to become contenders in these short reach applications. We present an O-band coherent optical fiber transmission system based on Quantum Dot—Mode Locked Lasers (QD-MLLs) using two independent free-running comb lasers, one each for the carrier and the Local Oscillator (LO). Using a comb-to-comb configuration, we demonstrate a 10 km single mode fiber, O-band, coherent, heterodyne, 12.1 Tbps system operating at 0.47 Tbps/λ using 26 λs. We used fewer comb lines (26 λs), faster symbol rate (56 GBaud) and higher constellation cardinality (32 QAM) relative to the highest capacity C-band systems reported to date. Through design, analysis, and experimentation, we quantify the optimum comb line spacing for this use case. We compare potential configurations for increasing data center interconnect capacities whilst reducing power consumption, complexity, and cost.

Quantum dot fourth-harmonic colliding pulse mode-locked laser for high-power optical comb generation

Quantum-dot mode-locked lasers have advantages such as high temperature stability, large optical bandwidth, and low power consumption, which make them ideal optical comb sources, especially for wavelength-division multiplexing (WDM) telecommunications, and optical I/O applications. In this work, we demonstrate an O-band quantum dot colliding pulse mode-locked laser (QD-CPML) to generate optical frequency combs with 200 GHz spacing with maximum channels of 12 within 3 dB optical bandwidth. To achieve the high output power of individual comb lines, four channel conditions are implemented at central wavelength of 1310 nm for WDM transmission experiments. Each channel exhibits more than 10 dBm output power with 200 Gb/s PAM-4 and 270 Gb/s PAM-8 modulation capability via thin-film LiNbO3 Mach–Zehnder interferometer modulator without the requirement of any optical amplifications. This high-order QD-CPML is an ideal comb source for power-efficient optical interconnects and large bandwidth optical data transmission.

Broadband quantum-dot frequency-modulated comb laser

Frequency-modulated (FM) laser combs, which offer a quasi-continuous-wave output and a flat-topped optical spectrum, are emerging as a promising solution for wavelength-division multiplexing applications, precision metrology, and ultrafast optical ranging. The generation of FM combs relies on spatial hole burning, group velocity dispersion, Kerr nonlinearity, and four-wave mixing (FWM). While FM combs have been widely observed in quantum cascade Fabry-Perot (FP) lasers, the requirement for a low-dispersion FP cavity can be a challenge in platforms where the waveguide dispersion is mainly determined by the material. Here we report a 60 GHz quantum-dot (QD) mode-locked laser in which both the amplitude-modulated (AM) and the FM comb can be generated independently. The high FWM efficiency of –5 dB allows the QD laser to generate FM comb efficiently. We also demonstrate that the Kerr nonlinearity can be practically engineered to improve the FM comb bandwidth without the need for GVD engineering. The maximum 3-dB bandwidth that our QD platform can deliver is as large as 2.2 THz. This study gives novel insights into the improvement of FM combs and paves the way for small-footprint, electrically pumped, and energy-efficient frequency combs for silicon photonic integrated circuits (PICs).

Group velocity dispersion in high-performance BH InAs/InP QD and InGaAsP/InP QW two-section passively mode-locked lasers.

High-performance buried heterostructure (BH) C-band InAs/InP quantum dot (QD) and L-band InGaAsP/InP quantum well (QW) two-section passively mode-locked lasers (MLLs) are investigated. From the irregularity of the longitudinal mode spacing in the comb spectra, we confirm that under stable passive mode locking, both devices have strong group velocity dispersion (GVD) and corresponding GVD-induced pulse width broadening. After compensation with anomalous dispersion fibers (SMF-28), short pulse trains with sub-ps pulse widths are achieved for both devices. This observation demonstrates our ability to generate high peak power sub-ps pulses using QD MLLs and QW MLLs for many photonic applications of optical communications.

Ultra-broadband flat-top quantum dot comb lasers

A quantum dot (QD) mode-locked laser as an active comb generator takes advantage of its small footprint, low power consumption, large optical bandwidth, and high-temperature stability, which is an ideal multi-wavelength source for applications such as datacom, optical interconnects, and LIDAR. In this work, we report a fourth-order colliding pulse mode-locked laser (CPML) based on InAs/GaAs QD gain structure, which can generate ultra-stable optical frequency combs in the O-band with 100 GHz spacing at operation temperature up to 100°C. A record-high flat-top optical comb is achieved with 3 dB optical bandwidth of 11.5 nm (20 comb lines) at 25°C. The average optical linewidth of comb lines is measured as 440 kHz. Single-channel non-return-to-zero modulation rates of 70 Gbit/s and four-level pulse amplitude modulation of 40 GBaud/s are also demonstrated. To further extend the comb bandwidth, an array of QD-CPMLs driven at separate temperatures is proposed to achieve 36 nm optical bandwidth (containing 60 comb lines with 100 GHz mode spacing), capable of a total transmission capacity of 4.8 Tbit/s. The demonstrated results show the feasibility of using the QD-CPML as a desirable broadband comb source to build future large-bandwidth and power-efficient optical interconnects.

Multimode Physics in the Mode Locking of Semiconductor Quantum Dot Lasers

Quantum dot lasers are an attractive option for light sources in silicon photonic integrated circuits. Thanks to the three-dimensional charge carrier confinement in quantum dots, high material gain, low noise and large temperature stability can be achieved. This paper discusses, both theoretically and experimentally, the advantages of silicon-based quantum dot lasers for passive mode-locking applications. Using a frequency domain approach, i.e., with the laser electric field described in terms of a superposition of passive cavity eigenmodes, a precise quantitative description of the conditions for frequency comb and pulse train formation is supported, along with a concise explanation of the progression to mode locking via Adler’s equation. The path to transform-limited performance is discussed and compared to the experimental beat-note spectrum and mode-locked pulse generation. A theory/experiment comparison is also used to extract the experimental group velocity dispersion, which is a key obstacle to transform-limited performance. Finally, the linewidth enhancement contribution to the group velocity dispersion is investigated. For passively mode-locked quantum dot lasers directly grown on silicon, our experimental and theoretical investigations provide a self-consistent accounting of the multimode interactions giving rise to the locking mechanism, gain saturation, mode competition and carrier-induced refractive index.

High-Efficiency Quantum Dot Lasers as Comb Sources for DWDM Applications

The trend of data center transceivers is to increase bandwidth while simultaneously decreasing their size, power consumption, and cost. While data center links have previously relied on vertical-cavity surface-emitting lasers (VCSELs) or in-plane lasers using coarse wavelength division multiplexing (WDM) to encode data, recently, dense WDM (DWDM) has moved to the forefront for next-generation links. Several approaches exist as light sources for DWDM links; DFB arrays, nonlinear microcombs, and semiconductor mode-locked lasers (MLLs). This paper focuses on quantum dot MLLs (QDMLLs), which currently offer the best efficiency, simplicity, and size. The efficiency of optical combs generated by QDMLLs is analyzed in depth in this study.

InAs/InP quantum dot mode-locked laser with an aggregate 12.544 Tbit/s transmission capacity.

Chip-scale optical frequency comb sources are ideal compact solutions to generate high speed optical pulses for applications in wavelength division multiplexing (WDM) and high-speed optical signal processing. Our previous studies have concentrated on the use of quantum dash based lasers, but here we present results from an InAs/InP quantum dot (QDot) C-band passively mode-locked laser (MLL) for frequency comb generation. By using this single-section QDot-MLL we demonstrate an aggregate line rate of 12.544 Tbit/s 16QAM data transmission capacity for both back-to-back (B2B) and over 100-km of standard single mode fiber (SSMF). This finding highlights the viability for InAs/InP QDot lasers to be used as a low-cost optical source for large-scale networks.

Multi-wavelength 128 Gbit s−1 λ −1 PAM4 optical transmission enabled by a 100 GHz quantum dot mode-locked optical frequency comb

Semiconductor mode-locked lasers (MLLs) with extremely high repetition rates are promising optical frequency comb (OFC) sources for their usage as compact, high-efficiency, and low-cost light sources in high-speed dense wavelength-division multiplexing transmissions. The fully exploited conventional C- and L- bands require the research on O-band to fulfil the transmission capacity of the current photonic networks. In this work, we present a passive two-section InAs/InGaAs quantum-dot (QD) MLL-based OFC with a fundamental repetition rate of ∼100 GHz operating at O-band wavelength range. The specially designed device favours the generation of nearly Fourier-transform-limited pulses in the entire test range by only pumping the gain section while with the absorber unbiased. The typical integrated relative intensity noise of the whole spectrum and a single tone are −152 and −137 dB Hz−1 in the range of 100 MHz–10 GHz, respectively. Back-to-back data transmissions for seven selected tones have been realised by employing a 64 Gbaud four-level pulse amplitude modulation format. The demonstrated performance shows the feasibility of the InAs QD MLLs as a simple structure, easy operation, and low power consumption OFC sources for high-speed fibre-optic communications.

Flexible Ultra-Wide Electro-Optic Frequency Combs for a High-Capacity Tunable 5G+ Millimeter-Wave Frequency Synthesizer

This paper presents a new scheme of a cost-effective tunable millimeter-wave (MMW) frequency synthesizer based on an ultra-wideband electro-optic frequency comb. The architecture for the quasi-tunable millimeter-wave frequency synthesizer mainly consists of a compact ultra-wide flat electro-optic frequency comb and a multi-tone frequency generator, which only includes a quantum dot mode-locked laser, a LiNbO3 dual-driving Mach–Zehnder modulator (DD-MZM) and Uni-traveling-carrier photodiode (UTC-PD). MMW signals generated with a quasi-tunable frequency are experimentally demonstrated. The difference in power is obtained for the different frequencies. The linewidth of the quasi-tunable frequency signals is less than 273 Hz. In addition, the single side band (SSB) phase noise of the 25, 37.5, 50 and 75 GHz is measured as −115, −106, −102 and −95 dBc/Hz at an offset of 1 kHz, respectively. The proposed frequency synthesizer has ultra-low phase noise, quasi-tunable frequency and simple structure. The research results of the frequency synthesizer are applied for 5G+ transmission with radio wave working at K-band and V-band. The flexible, compact and robust MMW frequency synthesizer is suitable for the future of ultra-high capacity 5G+ communication.

High-frequency short-pulse generation with a highly stacked InAs quantum dot mode-locked laser diode

A high-frequency pulse and a short pulse were generated using a quantum dot (QD) mode-locked laser diode (MLLD). We adopted a highly stacked QD structure using a strain-compensation technique within the active region of the QD-MLLD to fabricate a short-cavity MDDL. A two-section MLLD structure was fabricated with a cavity length of 500 μm. This laser exhibited lasing with a threshold current of approximately 34 mA with zero bias within the saturable absorber region. The spectrum of this laser has a well-defined, wide-range longitudinal mode. A short pulse of 464 fs in width and a high repetition rate of 81 GHz was observed through an interference measurement using a Michelson interferometer.

InAs/GaAs quantum dot single-section mode-locked lasers on Si (001) with optical self-injection feedback.

Silicon based InAs quantum dot mode locked lasers (QD-MLLs) are promising to be integrated with silicon photonic integrated circuits (PICs) for optical time division multiplexing (OTDM), wavelength division multiplexing (WDM) and optical clocks. Single section QD-MLL can provide high-frequency optical pulses with low power consumption and low-cost production possibilities. However, the linewidths of the QD-MLLs are larger than quantum well lasers, which generally introduce additional phase noise during optical transmission. Here, we demonstrated a single section MLL monolithically grown on Si (001) substrate with a repetition rate of 23.5 GHz. The 3-dB Radio Frequency (RF) linewidth of the QD-MLL was stabilized at optimized injection current under free running mode. By introducing self-injection feedback locking at a feedback strength of -24dB, the RF linewidth of MLL was significantly narrowed by two orders of magnitude from 900kHz to 8kHz.

Quantum dot mode-locked frequency comb with ultra-stable 25.5 GHz spacing between 20°C and 120°C

Semiconductor mode-locked lasers (MLLs) are promising frequency comb sources for dense wavelength-division-multiplexing (DWDM) data communications. Practical data communication requires a frequency-stable comb source in a temperature-varying environment and a minimum tone spacing of 25 GHz to support high-speed DWDM transmissions. To the best of our knowledge, however, to date, there have been no demonstrations of comb sources that simultaneously offer a high repetition rate and stable mode spacing over an ultrawide temperature range. Here, we report a frequency comb source based on a quantum dot (QD) MLL that generates a frequency comb with stable mode spacing over an ultrabroad temperature range of 20–120°C. The two-section passively mode-locked InAs QD MLL comb source produces an ultra-stable fundamental repetition rate of 25.5 GHz (corresponding to a 25.5 GHz spacing between adjacent tones in the frequency domain) with a variation of 0.07 GHz in the tone spacing over the tested temperature range. By keeping the saturable absorber reversely biased at − 2 V , stable mode-locking over the whole temperature range can be achieved by tuning the current of the gain section only, providing easy control of the device. At an elevated temperature of 100°C, the device shows a 6 dB comb bandwidth of 4.81 nm and 31 tones with > 36 dB optical signal-to-noise ratio. The corresponding relative intensity noise, averaged between 0.5 GHz and 10 GHz, is − 146 dBc / Hz . Our results show the viability of the InAs QD MLLs as ultra-stable, uncooled frequency comb sources for low-cost, large-bandwidth, and low-energy-consumption optical data communications.

Low phase noise and quasi-tunable millimeter-wave generator using a passively InAs/InP mode-locked quantum dot laser

A low phase noise millimeter-wave (MMW) signal generator is proposed and experimentally demonstrated with a C-band passively Fabry-Perot (F-P) quantum dot mode-locked laser. A novel method is proposed to generate low phase noise MMW signal, which is simply based on a commercial off-the-shelf dual-driven LiNbO3 Mach-Zehnder modulator and a passively F-P quantum dot mode-locked laser. MMW signal with the frequency of 30 GHz, 45 GHz and 90 GHz respectively is obtained experimentally. Single-sideband phase noise of the 30 GHz and 45 GHz MMW signal is −112 dBc/Hz and −106 dBc/Hz at an offset of 1 kHz, respectively. The linewidth of the 30 GHz and 45 GHz MMW signal is about from 225 Hz and 239 Hz. This is considered a very simple MMW generator with a quasi-tunable broadband and ultra-low phase noise.

Monolithic InP Quantum Dot Mode-Locked Lasers Emitting at 730 nm

This letter reports on InP/GaInP quantum dot mode-locked lasers emitting in the 730 nm wavelength region, extending the spectral range of previously reported monolithic mode-locked edge-emitting lasers. Modal gain and absorption measurements were used to identify a relatively broad spectrum which is utilised to support passive mode-locking in a monolithically integrated two-section ridge laser. The conditions for mode-locking were explored by varying the current to the gain section and reverse bias to the absorber section. For a total cavity length of 3 mm, the shortest pulse train observed was 6 ps in duration with a repetition rate of 12.55 GHz.

1.3-µm passively mode-locked quantum dot lasers epitaxially grown on silicon: gain properties and optical feedback stabilization

This work reports on an investigation of the optical feedback in an InAs/InGaAs passively mode-locked quantum dot (QD) laser epitaxially grown on silicon. Under the stably-resonant optical feedback condition, experiments demonstrate that the radio-frequency linewidth is narrowed whatever the bias voltage applied on the saturable absorber (SA) is; on the other hand, the effective linewidth enhancement factor of the device increases with the reverse bias voltage on the SA, hence it is observed that such an increase influences the mode-locking dynamic and the stability of device under optical feedback. This work gives insights for stabilizing epitaxial QD mode-locked lasers on silicon which is meaningful for their applications in future large-scale silicon electronic and photonic applications requiring low power consumption as well as for high-speed photonic analog-to-digital conversion, intrachip/interchip optical clock distribution and recovery.

Integrated dispersion compensated mode-locked quantum dot laser

Quantum dot lasers are excellent on-chip light sources, offering high defect tolerance, low threshold, low temperature variation, and high feedback insensitivity. Yet a monolithic integration technique combining epitaxial quantum dot lasers with passive waveguides has not been demonstrated and is needed for complex photonic integrated circuits. We present here, for the first time to our knowledge, a monolithc offset quantum dot integration platform that permits formation of a laser cavity utilizing both the robust quantum dot active region and the versatility of passive GaAs waveguide structures. This platform is substrate agnostic and therefore compatible with the quantum dot lasers directly grown on Si. As an illustration of the potential of this platform, we designed and fabricated a 20 GHz mode-locked laser with a dispersion-engineered on-chip waveguide mirror. Due to the dispersion compensation effect of the waveguide mirror, the pulse width of the mode-locked laser is reduced by a factor of 2.8.

Multichannel 16-QAM Single-Sideband Transmission and Kramers–Kronig Detection Using a Single QD-MLL as the Light Source

A 12-channel single-sideband transmission of 16-QAM signals at 18 GBd is experimentally demonstrated for the first time using a single quantum-dot mode-locked laser (QD-MLL) as the light source for both the modulated carriers and the continuous wave components. The Kramers–Kronig field reconstruction algorithm was used at the direct detection receiver for signal-signal beat interference cancellation. A total net data rate of >800 Gb/s is achieved over 78 km fiber of 1680 ps/nm accumulated chromatic dispersion with BER ≤ 2 × 10−3, which is lower than the threshold of hard-decision FEC with 7% overhead. Numerical simulations were also performed to assess the impact of noises from the laser source and the receiver front-end on the system performance.

On the Phase Noise Enhancement of a Continuous Wave in Saturated SOA Used for RIN Reduction

We report on the spectral characteristics of the phase noise enhancement of continuous-wave (CW) optical signals passing through a semiconductor optical amplifier (SOA) operating in the saturation regime and used for relative intensity noise (RIN) reduction. We show that the known effect of phase noise enhancement, attributed to the linewidth enhancement factor of the device, happens only at a limited band of the phase noise spectrum, and the actual measurable linewidth of the output CW signal may not be affected. While this phase noise enhancement is not shown as an increase of spectral linewidth, it can still affect system performance when coherent detection is used, especially in applications with relatively low symbol rates. Numerical simulations and experimental results are used to support the observation. A single spectral line from a quantum-dot mode-locked laser is used as the light source, which is known to have relatively high RIN (> −120 dB/Hz in the low frequency region). Experimental transmission of 16-QAM modulation with coherent detection has been performed at 5 GBd to assess the implication on system performance.

Indications on self mode-locking in a broad area single-section quantum dot laser

Broad-area edge-emitting monolithic mode-locked semiconductor quantum dot lasers emitting at 1.26 μm could potentially serve as ideal sources for the generation of high power broad optical frequency combs for short-reach inter and intra data-center links. In this contribution, the inter-mode beat frequency of a 2 mm long InAs/InGaAs quantum dot laser with a broad-ridge waveguide are studied experimentally. Laser output power, radio-frequency and spectral domain analysis is performed. -3 dB spectral widths ranging from 2nm to 5.3 nm and the existence of an inter-mode beat frequency at 20.4 GHz with a signal-to-noise ratio from 2 dB up to 11 dB are experimentally confirmed for injection currents from 0.225 A to 1 A. Our results indicate a potential way towards high output power optical frequency comb generation by electrically injected monolithic semiconductor lasers.