Quantum Confined Stark Effect Research Articles

Introducing boron gallium nitride as carriers’ source layer for efficient near-ultraviolet microLED

Abstract This study explored the impact of boron gallium nitride (BGaN) in buffer layer and hole source layer. We employed B0.05Ga0.95N which reduced the lattice mismatch as well as the electric field. BGaN not only minimized the number of electrons leaking out of quantum wells (QWs) but also improved the hole injection. It is evident from our simulations that internal quantum efficiency (IQE) is enhanced significantly as more carriers are available for radiative recombination in multiple quantum wells (MQWs). Along with the increase in IQE, droop is also reduced in BGaN ultraviolet light-emitting diodes. Significantly high luminous power and emission intensity were observed along with slight blueshift because of minimized quantum confinement stark effect (QCSE).

Chiral Nematic Cellulose Nanocrystal Films for Enhanced Charge Separation and Quantum-Confined Stark Effect.

Efficient charge separation is essential in various optoelectronic systems, yet it continues to pose substantial challenges. Building upon the recent evidence that chiral biomolecules can function as electron spin filters, this study aims to extend the application of chirality-driven charge separation from the molecular level to the mesoscale and supramolecular scale. Utilizing cellulose nanocrystals (CNCs) derived from cellulose, the most abundant biomaterial on Earth, this research leverages their self-assembly into chiral nematic structures and their dielectric properties. A device is introduced featuring a chiral nematic hybrid film composed of CNCs and quantum dots (QDs), decorated with iron oxide nanoparticles. Using the quantum-confined Stark effect (QCSE) to probe charge separation, we reveal significant sensitivity to the circular polarization of light and the chiral nematic structure of the film. This approach achieves effective, long-lasting charge separation, both locally and across length scales exceeding 1 μm, enabling potential applications such as self-assembled devices that combine photovoltaic cells with electric capacitance as well as optical electric-field hybrid biosensors.

Spectrally Pure, High Operational Dynamic Range, Deep Red Micro-LEDs.

III-nitride-based micro-light-emitting diodes (micro-LEDs) are currently under rapid development for next-generation high-resolution and high-brightness displays and augmented/virtual reality (AR/VR) technologies. However, it remains elusive to achieve red-emitting III-nitride micro-LEDs with a microscale size, high efficiency, and high spectral stability, posing significant impediments to the development of full-color micro-LEDs. In this work, through detailed strain engineering and control of charge carrier transport, we achieved pure red emission (≥620 nm) micro-LEDs over 2 orders of magnitude of injection current variation. We show both theoretically and experimentally that the combination of a short-period InGaN/GaN superlattice and a thick n-type GaN interlayer can not only relieve the quantum-confined Stark effect in the active region but also suppress parasitic emission from the superlattice. The optimized deep red micro-LEDs with a device lateral dimension of ∼1 μm feature a maximal external quantum efficiency of over 3% emitting at ∼660 nm.

Ultra-dense Green InGaN/GaN Nanoscale Pixels with High Luminescence Stability and Uniformity for Near-Eye Displays.

Ultra-dense (>4,000 pixels per inch) and highly stable full-color III-nitride nanoscale pixels are crucial for near-eye display technologies like virtual and augmented-reality glasses. In this context, InGaN-based long wavelength green microscale light-emitting diodes face major bottlenecks, such as low efficiency and inadequate wavelength stability. These challenges are associated with the presence of both nonradiative surface defects and the strain induced quantum-confined Stark effect. Herein, we report nanoscale pixelation of green InGaN/GaN LEDs incorporating strain-engineered ultra-dense nanowire (NW) arrays, corresponding to ∼36,000 pixels per inch. The NW pixel arrays exhibit a stable peak wavelength emission at ∼500 nm for over 3 orders of magnitude of injection current densities (from ∼4 A/cm2 to ∼1 kA/cm2). The observed wavelength stability enhancement (a reduced blue-shift of just ∼4 nm) directly results from the suppressed built-in electric field achieved by strain relaxation of the axial multi quantum wells in the NWs. Finite difference time domain simulations show that emission of the pixel array is significantly increased owing to the enhanced spontaneous emission rate (characterized by a high Purcell factor of ≈2) of the ultra-dense NWs. We have demonstrated top-down NWs, where each NW (diameter ranging down to 200 nm) shows excellent uniformity and light output characteristics in direct contrast to bottom-up grown NW heterostructures. The results of this study establish a viable route for realizing nanoscale pixels with high luminescence stability and wafer-scale uniformity with high (>20%) indium composition InGaN/GaN LED heterostructures, for next-generation near-eye displays.

Inverted V-shaped size-dependent emission wavelength shift in InGaN micro-LEDs with size down to 1 μm

The size-dependent emission wavelength shift of micro-scale light emitting diodes (micro-LEDs) has been frequently reported in recent publications, but its underlying physical mechanism has not yet been thoroughly elucidated. Here, we fabricate and characterize the red, green, and blue InGaN micro-LED mesas with different diameters down to 1 μm. As the size decreases, all the samples of different colors show an inverted V-shaped photoluminescence wavelength variation trend, first a red shift and then a blue shift, and the shifting range is larger for samples with longer wavelengths. Micro-Raman spectrum confirms that the stress was significantly released after scaling down the size from epitaxial wafer to 1 μm. The theoretical simulations show that the red and blue shifts are, respectively, attributed to the bandgap narrowing and the weakening of the quantum-confined Stark effect caused by strain relaxation, which dominate successively.

Highly efficient AlGaN-based deep-ultraviolet light-emitting diodes: from bandgap engineering to device craft

AlGaN-based light-emitting diodes (LEDs) operating in the deep-ultraviolet (DUV) spectral range (210–280 nm) have demonstrated potential applications in physical sterilization. However, the poor external quantum efficiency (EQE) hinders further advances in the emission performance of AlGaN-based DUV LEDs. Here, we demonstrate the performance of 270-nm AlGaN-based DUV LEDs beyond the state-of-the-art by exploiting the innovative combination of bandgap engineering and device craft. By adopting tailored multiple quantum wells (MQWs), a reflective Al reflector, a low-optical-loss tunneling junction (TJ) and a dielectric SiO2 insertion structure (IS-SiO2), outstanding light output powers (LOPs) of 140.1 mW are achieved in our DUV LEDs at 850 mA. The EQEs of our DUV LEDs are 4.5 times greater than those of their conventional counterparts. This comprehensive approach overcomes the major difficulties commonly faced in the pursuit of high-performance AlGaN-based DUV LEDs, such as strong quantum-confined Stark effect (QCSE), severe optical absorption in the p-electrode/ohmic contact layer and poor transverse magnetic (TM)-polarized light extraction. Furthermore, the on-wafer electroluminescence characterization validated the scalability of our DUV LEDs to larger production scales. Our work is promising for the development of highly efficient AlGaN-based DUV LEDs.

Tuning Stark effect by defect engineering on black titanium dioxide mesoporous spheres for enhanced hydrogen evolution

Defects can strongly affect the lattice, strain, and electronic structures of nanomaterials photocatalysts, like a double-edged sword of both positive significance and negative influence on photocatalytic performances. To date, most studies into defects only partially elucidated their beneficial or detrimental roles in photocatalysis. However, a quantitative understanding of the photocatalytic performances modulated by defect concentration still needs to be discovered. Here, a series of TiO2−X mesoporous spheres (MS) with different oxygen vacancy concentrations for photocatalytic applications were prepared by high-temperature chemical reduction. The link between oxygen vacancy concentration and photocatalytic performance was successfully established. The localization of carriers dominated by the Stark effect is first enhanced and then weakened with increasing oxygen vacancy concentration, which is a crucial factor in explaining the double-edged sword role of defect concentration in photocatalysis. As the reduction temperature rises to 300 °C, carrier localization dominated by the quantum-confined Stark effect maximizes the separation ability of photo generated electron hole pairs, thus exhibiting the best catalytic performance for photocatalytic hydrogen production and the degradation of organic pollutants, as demonstrated by a hydrogen evolution rate of 523.7 µmol g-1 h-1 and a ninefold higher RhB photodegradation rate compared to TiO2 MS. The work offers excellent flexibility for precisely constructing high-performance photocatalysts by understanding vacancy engineering.

Wavelength-tunable high-fidelity entangled photon sources enabled by dual Stark effects

The construction of a large-scale quantum internet requires quantum repeaters containing multiple entangled photon sources with identical wavelengths. Semiconductor quantum dots can generate entangled photon pairs deterministically with high fidelity. However, realizing wavelength-matched quantum-dot entangled photon sources faces two difficulties: the non-uniformity of emission wavelength and exciton fine-structure splitting induced fidelity reduction. Typically, these two factors are not independently tunable, making it challenging to achieve simultaneous improvement. In this work, we demonstrate wavelength-tunable entangled photon sources based on droplet-etched GaAs quantum dots through the combined use of AC and quantum-confined Stark effects. The emission wavelength can be tuned by ~1 meV while preserving an entanglement fidelity f exceeding 0.955(1) in the entire tuning range. Based on this hybrid tuning scheme, we finally demonstrate multiple wavelength-matched entangled photon sources with f > 0.919(3), paving the way towards robust and scalable on-demand entangled photon sources for quantum internet and integrated quantum optical circuits.

Efficient and droop-free AlGaN-based UV-C LED using the inverted linearly graded active region and engineered hole source layer

The poor efficiency of the aluminum gallium nitride (AlGaN)-based ultraviolet (UV)-C light emitting diode (LED) remains as the major hindrance towards its commercialization. Thus, to enhance the internal quantum efficiency (IQE) and light output power (LOP) and to mitigate the efficiency droop of AlGaN-based UV-C LED, this simulation work proposes and examines a new engineering strategy, i.e., inverted linearly graded quantum wells along with quantum barriers over a series of samples A, B and C. To further improve the characteristics of AlGaN-based UV-C LED, an engineered linearly graded p-AlGaN layer has been proposed in the device structure. This increases the electron and hole concentrations by ∼2-fold and ∼8-fold, respectively. The 1.2-fold reduction in hole effective potential barrier height improves the hole injection. Also, the 1.5-fold increase in electron effective potential barrier height limits electron spill-off from the active region. The proposed structural-engineering reduces quantum confined stark effect (QCSE) confirmed by the reduction of quantum well slopes. Reducing carrier spill-off and QCSE increases average radiative recombination rate by ∼8-fold. The maximum IQE is improved by ∼44 % and the efficiency droop is also reduced to a promising level of ∼2 % in case of the sample under consideration. Finally, the LOP increases 10-fold, promisingly. Thus, the proposed structure is supposed to be highly potential for improving the UV-C LED performance. The electroluminescence spectra show that despite the gradual differences introduced in the structure, all the samples emit at ∼276 nm with similar full width at half maximum providing a reference for the comparison.

Nonvolatile Control of Valley Polarized Emission in 2D WSe2-AlScN Heterostructures.

Achieving robust and electrically controlled valley polarization in monolayer transition metal dichalcogenides (ML-TMDs) is a frontier challenge for realistic valleytronic applications. Theoretical investigations show that the integration of 2D materials with ferroelectrics is a promising strategy; however, an experimental demonstration has remained elusive. Here, we fabricate ferroelectric field-effect transistors using a ML-WSe2 channel and an Al0.68Sc0.32N (AlScN) ferroelectric dielectric and experimentally demonstrate efficient tuning as well as non-volatile control of valley polarization. We measure a large array of transistors and obtain a maximum valley polarization of ∼27% at 80 K with stable retention up to 5400 s. The enhancement in the valley polarization is ascribed to the efficient exciton-to-trion (X-T) conversion and its coupling with an out-of-plane electric field, viz., the quantum-confined Stark effect. This changes the valley depolarization pathway from strong exchange interactions to slow spin-flip intervalley scattering. Our research demonstrates a promising approach for achieving non-volatile control over valley polarization for practical valleytronic device applications.

Performance Enhancement of Multiple Quantum Shell Nanowire‐Based Micro‐Light Emitting Diodes with Underlying GaInN/GaN Superlattices

GaInN/GaN multiple quantum shell (MQS) nanowires (NWs) are of great interest as high‐efficiency micro‐light emitting diodes (micro‐LEDs), mainly due to their quantum confined Stark effect suppression and dry etching insensitivity features. Herein, morphological and device properties corresponding to NW‐LEDs with different numbers of GaInN/GaN superlattices (SLs) are evaluated. The scanning electron microscopy measurements revealed that the polar‐plane MQS are shrunken, while the semipolar‐plane underwent expansion upon the introduction of the SLs. The current density–voltage–light output analysis at low current density indicates that samples with a greater number of SL pairs exhibit higher light output. Electroluminescence spectra show that NWs lacking SLs exhibit an emission wavelength of 700 nm, which is derived from indium‐rich clusters in polar‐plane MQS, whereas those with SLs emit at a significantly shorter wavelength of 560 nm. The reduction in the polar‐plane MQS coupled with the enhancement in MQS quality resulting from the SLs is identified as the primary contributing factor. Additionally, the external quantum efficiency factor for NW‐LEDs, which remained consistent even as the emission area decreased, is assessed. These findings suggest that NW‐LEDs with SLs possess the potential to mitigate the emission degradation associated with sidewall etching and realize high‐efficiency micro‐LEDs.

Impact of Crystal Orientation on Modulation Bandwidth: Towards GaN LED-Based High-Speed Visible Light Communication

Light-emitting diodes (LEDs) with high modulation bandwidth are required for high-speed visible light communication applications. Crystal orientation in the GaN LED structure plays a key factor in its modulation bandwidth as the recombination lifetime is highly dependent on crystal orientation owing to the Quantum-Confined Stark Effect (QCSE). In this study, six different crystal orientation multi-quantum well (MQW) GaN LEDs are simulated to understand the impact of heterostructure orientation on modulation bandwidth, radiative recombination rates, and emission intensity. The results of this study demonstrate that semi-polar 101¯3¯ MQW LEDs provide the highest bandwidth in the current density range of 9–20 kA/cm2 compared to the other five orientations. For instance, the semi-polar 101¯3¯-based LED offers a modulation bandwidth of 912.7 MHz at 20 kA/cm2 current density. These results suggest that the semi-polar 101¯3¯ orientation-based LED has the potential to support a high-speed visible light communication system.

High Performance Electrically‐Injected InGaN Microdisk Lasers through Simultaneous Enhancement of Optical Confinement and Overlap Factor

AbstractDespite the considerable research interest in InGaN‐based microdisk lasers, owing to their unique circular geometry distinct from vertical cavity surface‐emitting lasers (VCSEL) or edge‐emitting lasers, commercial products remain scant due to deficient performance under electrical injection. This study proposes an innovative method integrating a thin‐film configuration with a metallic undercut, significantly augmenting optical confinement, overlap factor, and thus lasing performance. This approach results in a diminished lasing threshold from 1500 to 670 Wcm−2 and a record high quality (Q) factor of 10100 under electrical injection. Strain relaxation in the metallic undercut, identified via scanning near‐field optical microscopy (SNOM), beneficially mitigates the Quantum Confined Stark Effect (QCSE), boosting the internal quantum efficiency of the laser. Furthermore, a beneficial blue‐shift in the emission spectrum aligns with the lasing peak, strengthening the Q factor. A tactfully implemented recessed top contact enables electrical injection lasing without optical performance compromise. The study provides invaluable insights for future microdisk laser technology advancements, potentially leading to specialized functionalities, including quantum optics, thereby opening new avenues for research and applications in this field.

The Influence Mechanism of Quantum Well Growth and Annealing Temperature on In Migration and Stress Modulation Behavior.

This study explores the effects of growth temperature of InGaN/GaN quantum well (QW) layers on indium migration, structural quality, and luminescence properties. It is found that within a specific range, the growth temperature can control the efficiency of In incorporation into QWs and strain energy accumulated in the QW structure, modulating the luminescence efficiency. Temperature-dependent photoluminescence (TDPL) measurements revealed a more pronounced localized state effect in QW samples grown at higher temperatures. Moreover, a too high annealing temperature will enhance indium migration, leading to an increased density of non-radiative recombination centers and a more pronounced quantum-confined Stark effect (QCSE), thereby reducing luminescence intensity. These findings highlight the critical role of thermal management in optimizing the performance of InGaN/GaN MQWs in LEDs and other photoelectronic devices.

The Effect of AlN Epilayer Growth Rate on the Growth of Semipolar (11–22) InGaN/GaN Light Emitting Diode

This article presents the effect of aluminium nitride (AlN) epilayer (EPL) growth rate on the growth of semipolar (11–22) InGaN/GaN light emitting diode (LED). Three samples are grown with different AlN EPL growth rates, which are low (L1, 1.0 nm s−1), intermediate (L2, 1.3 nm s−1), and high (L3, 1.6 nm s−1) growth rate. The root‐mean‐square (RMS) and peak‐to‐valley roughness show an increasing trend with the increasing AlN EPL growth rate which is attributed to an increment in indium composition as justified by the photoluminescence results. The sample with AlN EPL growth rate of 1.3 nm s−1 (L2) exhibits an outstanding crystal quality in terms of defect densities reduction, with a minimum basal stacking fault density of 1.60 × 104 cm−1 as calculated. Besides that, the obvious fringes of InGaN/GaN peaks observed in 2θ−ω scan proves that a high abruptness multi‐quantum well is attained. Sample L2 also shows a single peak profile in both photoluminescence and electroluminescence spectra with green wavelength emission of 506 and 537 nm, respectively, indicating a homogeneous indium composition. As the injection current is swept from 5 to 40 mA for sample L2, a weak blueshift of ≈6 nm is observed which indicates a reduction in quantum‐confined Stark effect (QCSE).

Enhancing the blue GaN laser diodes by modifying the first barrier structure and adjusting the growth conditions of quantum wells

The structure of the first barrier (FB) of quantum wells was modified from the single-layer GaN to the GaN-InGaN-GaN composite structure. Experiments have shown that the composite first barrier can improve the crystal quality of the quantum wells, which increase the luminous power and reduce the stress accumulation before the InGaN quantum well. Furthermore, the composite first barrier can reduce the polarized electric fields and suppress the impact of quantum confinement Stark effect (QCSE) on the luminescence properties of the quantum wells. The growth conditions of the InGaN/GaN quantum wells were studied. Both the growth rate and the ammonia flow are related to the incorporation of In in InGaN quantum wells and the formation of In clusters. These two parameters have optimal values when the other one is fixed. After optimizing the growth rate and the ammonia flow, the internal quantum efficiency of the quantum wells was finally improved from 24.14 % to a commercial level of 77.2 %.

Electrically Tunable Single Polaritonic Quantum Dot at Room Temperature.

Exciton-polaritons confined in plasmonic cavities are hybridized light-matter quasiparticles, with distinct optical characteristics compared to plasmons and excitons alone. Here, we demonstrate the electric tunability of a single polaritonic quantum dot operating at room temperature in electric-field tip-enhanced strong coupling spectroscopy. For a single quantum dot in the nanoplasmonic tip cavity with variable dc local electric field, we dynamically control the Rabi frequency with the corresponding polariton emission, crossing weak to strong coupling. We model the observed behaviors based on the quantum confined Stark effect in the strong coupling regime.

Spatial and time-resolved properties of emission enhancement in polar/semi-polar InGaN/GaN by surface plasmon resonance

Abstract Light-emitting diodes (LEDs) are widely used as next-generation light sources because of their various advantages. However, their luminous efficiency is remarkably low at the green-emission wavelength. The luminous efficiencies of InGaN/GaN quantum wells (QWs) significantly decrease with increasing indium content in the green wavelength region, mainly owing to the quantum-confined Stark effect (QCSE). This green gap problem can be solved using QWs grown on semi-polar GaN substrates, such as the {11–22} planes, to reduce the QCSE. We propose that the use of surface plasmons (SPs) is a promising way to improve the light emission efficiency of light-emitting materials such as InGaN/GaN QWs. SP resonance increases the spontaneous emission rates of the excited states, causes a relative reduction in non-radiative relaxation, and ultimately increases the internal quantum efficiencies. In this study, the light emissions of InGaN/GaN QWs grown on polar and semi-polar GaN were investigated using micro-photoluminescence (PL). We successfully enhanced the light emission of semi-polar GaN via SP resonance. The PL peak intensities and wavelengths were mapped and compared to determine the underlying mechanisms. We also measured the emission lifetimes by time-resolved PL and interpreted the detailed mechanism of SP-enhanced emissions. It was found that SP resonances can control not only the emission efficiency but also the exciton dynamics, such as exciton localization effects, QCSE screening, and defect level saturation. We conclude that the green gap problem can be solved by SP-enhanced light emission in semipolar InGaN/GaN.

Enhanced Photocurrent and Electrically Pumped Quantum Dot Emission from Single Plasmonic Nanoantennas.

Integrating cavity-enhanced colloidal quantum dots (QDs) into photonic chip devices would be transformative for advancing room-temperature optoelectronic and quantum photonic technologies. However, issues with efficiency, stability, and cost remain formidable challenges to reach the single antenna limit. Here, we present a bottom-up approach that delivers single QD-plasmonic nanoantennas with electrical addressability. These QD nanojunctions exhibit robust photoresponse characteristics, with plasmonically enhanced photocurrent spectra matching the QD solution absorption. We demonstrate electroluminescence from individual plasmonic nanoantennas, extending the device lifetime beyond 40 min by utilizing a 3 nm electron-blocking polymer layer. In addition, we reveal a giant voltage-dependent redshift of up to 62 meV due to the quantum-confined Stark effect and determine the exciton polarizability of the CdSe QD monolayer to be 4 × 10-5 meV/(kV/cm)2. These developments provide a foundation for accessing scalable quantum light sources and high-speed, tunable optoelectronic systems operating under ambient conditions.

Strain modulation effect of superlattice interlayer on InGaN/GaN multiple quantum well

The strong piezoelectric field in InGaN/GaN heterostructure quantum wells severely reduces the light emission efficiency of multiple quantum well (MQW) structures. To address this issue, a strain modulation interlayer is commonly used to mitigate the piezoelectric polarization field and improve the luminescence performance of the devices. To investigate the influence and mechanism of strain modulation in the InGaN/GaN superlattice (SL), epitaxial wafers with an n-type InGaN/GaN SL interlayer sample, and their corresponding control samples are prepared. The measured temperature-dependent photoluminescence (PL) spectra of the epitaxial wafers, show that the introduction of an SL interlayer leads to a shorter-wavelength emission and enhancement of internal quantum efficiency. As the temperature increases, a blue shift of the PL peak is observed. However, for the sample with an SL interlayer, the blue shift of the PL peak with temperature increasing is relatively small. Electroluminescence (EL) experiments indicate that the introduction of an SL interlayer significantly increases the integrated intensity of the EL peak and reduces its full width at half maximum. These phenomena collectively indicate that the incorporation of a superlattice interlayer can partly suppress the quantum-confined Stark effect (QCSE) that affects the light emission efficiency. Theoretical calculations show that the introduction of a superlattice strain layer before growing an active multiple quantum well can weaken the polarization-induced built-in electric field in the active quantum well, reduce the tilt of the energy band in the multiple quantum well active region, increase the overlap of electron and hole wave functions, enhance the emission probability, shorten the radiative recombination lifetime, and promote competition between radiative recombination and non-radiative recombination, thereby achieving higher recombination efficiency and improving light emission intensity. This study provides experimental and theoretical evidence that the strain modulation SL interlayer can effectively improve the device performance and offer guidance for optimizing the structural design of devices.