Crystal Quality Research Articles

Research on bubble-free Si/SiC hydrophilic bonding approach for high-quality Si-on-SiC fabrication

The electrical device fabricated by the Si-on-SiC substrate exhibits superior heat dissipation and minimal RF loss. However, a common challenge in hydrophilic direct bonding is the inevitable formation of bubbles at the Si/SiC interface, which compromises material utilization efficiency. To address this issue, a multi-bonding process was introduced in this research. Experimental findings revealed that this method effectively mitigated interfacial bubble formation, especially when incorporating a multi-step annealing–separating–bonding approach, yielding even more promising results. Ultimately, a bubble-free 3 × 3 cm2 Si-on-SiC substrate was fabricated. Material characterization techniques confirmed the high crystal quality and minimal surface roughness for the Si functional layer. Transmission electron microscopy further revealed the presence of an amorphous oxide layer (∼3.5 nm) at the interface, devoid of any defects or nanovoids. It is believed that with its excellent physical properties, Si-on-SiC will have a broader application prospect in extreme environments.

Liquid phase epitaxy of GaN films on sapphire substrates under an atmospheric pressure nitrogen ambience

GaN films were grown on sapphire substrates using liquid phase epitaxy under an atmospheric pressure nitrogen ambience, employing molten Ga and Fe3N as a source mixture. Single-crystal GaN (0001) films were successfully grown on sapphire (0001) substrates within a growth temperature (T g) range of 750 °C–900 °C. When varying the Fe3N concentration in the range of 0.05–3 mol%, lower iron nitride resulted in high crystallinity of GaN (0001) films. The incorporation of iron atoms in GaN can negatively impact crystal quality. Parameterizing T g at a concentration of 0.1 mol% Fe3N showed that higher T g led to a reduction in the peak width of GaN (0002) X-ray rocking curves. However, at 3 mol%, elevating T g resulted in the degradation of the crystallinity of GaN. This degradation may be attributed to the increased solubility of iron atoms in GaN with increasing T g.

Solar blind avalanche photodetector based on a n-β-Ga2O3/n-Si heterojunction via an introduction of AlN buffer layer for interface lattice and band Engineering

The ultrawide-band gap semiconductor Ga2O3 as a photodetector heteroepitaxially grown on Si is expected to be widely used for weak solar-blind signal detections because the optical filters typically used in Si-based UV detectors can be avoided. Photodetectors fabricated from Ga2O3/Si are promising for multi-color detection (Ga2O3-based for UV and Si-based for visible/IR) and are more compatible with traditional Si-based electronic circuits. This paper proposes an n-type semiconductor-barrier-n-type semiconductor (n/B/n) with a unipolar barrier β-Ga2O3/AlN/n-Si heterostructure as a solar-blind avalanche photodetector. Introducing the AlN buffer layer eliminates the native amorphous SiOx layer, reduces lattice mismatch between β-Ga2O3 and Si, and improves the quality of β-Ga2O3 crystallization. Embedding AlN increases the conduction band shift of β-Ga2O3/Si, limits electron migration, reduces device dark current, and increases the reverse breakdown voltage. The β-Ga2O3/AlN (150 nm)/n-Si heterostructure has a high responsivity of 131.3 A/W with a detectivity of 2.9 × 1015 Jones, and an ultrahigh UV/visible (Rpeak/R400nm) rejection ratio of 5.2 × 105 at −55 V. The avalanche gain can also reach 2.7 × 104 at an 85 V reverse bias. This work provides an effective strategy for constructing a high-performance avalanche solar-blind-UV/visible/IR as a multi-color photodetector on one “chip” of a Si-based integrated circuit.

Heteroepitaxially grown homojunction gallium oxide PN diodes using ion implantation technologies

Although advancements in n- and p-doping of gallium oxide (Ga2O3) are underway, the realization of functional pn diodes remains elusive. Here, we present the successful fabrication of a Ga2O3 pn diode utilizing ion implantation technology. The Ga2O3 epilayers were grown on c-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD). P-type conductivity Ga2O3 epilayer, confirmed by Hall effect analysis, was achieved by phosphorus (P) ion implantation followed with a rapid thermal annealing (RTA) process. This p-Ga2O3 epilayer reveals a significant reduction in resistivity (<106) compared to undoped Ga2O3, demonstrating the successful inclusion and activation of P within the crystal lattice. X-ray diffraction analysis shows that the Ga2O3 epilayers were grown in high crystal quality. Although the crystallinity of Ga2O3 was slightly degraded after P ion implantation, the structure was recovered to high-quality crystal after RTA treatment. For the device structure, p-type Ga2O3 was formed first, followed n-type Ga2O3 regrowth to create a pn junction diode. The obtained results demonstrate a built-in voltage of 4.8 V, 4.2 V, and 4.308 V from simulation, fabricated pn diodes measured by I–V and C–V, respectively. A high breakdown voltage of 900 V was also obtained for the lateral pn diode grown on sapphire substrate. As concerning temperature stability, I–V curves of Ga2O3 pn diode were measured from 25oC to 150oC in steps of 25 °C. At elevated temperatures, for both forward and reverse biases, consecutive increasing currents were measured. These could be resulted from dominant diffusion and drift currents over recombination current at a given bias. In addition, the reverse current saturated (@V > 3kT/q) and remained very low at 2✕10−8 A, as the diode operated at 150oC. The behavior could be due to Ga2O3 being a wide bandgap material.

Effect of gas pre-decomposition device on the growth of GaN epitaxial layer

In previous studies, the influence of gas phase and surface reactions on the growth of GaN was mainly calculated through simulations. In this study, a novel gas pre-decomposition device (GPDD) was designed to experimentally investigate the effects of gas phase and surface reactions on GaN growth by changing the length and height of the isolation plates (IPs). By varying the structure of the GPDD, the effects on the growth rate and thickness uniformity of the GaN films were studied. The growth rate of the GaN sample slowed with the extension of the IPs because the longer partition plates led to insufficient gas mixing and premature consumption of the precursor trimethylgallium (TMG). The use of GPDD simultaneously achieves high crystal quality and smooth surface morphology of the GaN film. Owing to the use of GPDD, the decomposition of TMG in the pyrolysis pathway was promoted, which suppressed Ga vacancies and C impurities, resulting in weak yellow luminescence bands in the photoluminescence. This study provides a comprehensive understanding of the chemical reaction mechanism of GaN and plays an important role in promoting the development of metal-organic chemical vapor deposition equipment.

Crystal Quality and Efficiency Engineering of InGaN‐Based Red Light‐Emitting Diodes

This article is aimed at understanding of the complex design of metalorganic chemical vapour deposition ‐grown InGaN‐based red light‐emitting diode (LED) structure. The contribution of different elements of red LED structure to the stress distribution and threading dislocation density (TDD) evolution is theoretically investigated. For this purpose a self‐consistent modeling of the structure growth process is used, taking into account stress‐modulated indium incorporation, mismatch stress relaxation by threading dislocations and V‐pits, and nucleation of new threading dislocations. The simulation results, consisting of composition, stress, and TDD profiles, are then utilized for modeling of device operation, which allows to analyze contribution of different elements to the heterostructure operation.

MgSnO3 epitaxial thin films for solar-blind photodetection: Fabrication and properties

In alkaline earth stannates, MgSnO3 has low density, high specific strength and wide bandgap (∼4.0 eV), which is a particularly promising semiconductor material. However, the lack of single crystal film limits the application of such materials in photoelectric devices. Here, high-quality MgSnO3 epitaxial film was grown on SrTiO3 substrate by pulsed laser deposition (PLD). The film grown under an oxygen pressure of 5 Pa at 900 °C presented the best crystal quality, which has high transmittance (>93 %) and wide bandgap (3.94 eV). The in-plane and out-of-plane epitaxial relationships between the film and substrate are MgSnO3[1 1‾ 00] ⎜⎜SrTiO3[1 1‾ 0] and MgSnO3(0001) ⎜⎜SrTiO3(111), respectively. Due to the lower formation energy of Mg vacancies compared to Sn vacancies, the Mg/Sn molar ratio in the film is less than 1, increasing with the oxygen pressure rising during the film. For the solar-blind photodetector based on 10 Pa sample, the device presents a photo-responsivity of 3.76 × 10−3 A ∙ W−1 and a fast speed of photoresponse (<0.05 s). The excellent performance exhibited by single crystal thin films will undoubtedly promote the development of MgSnO3 based single crystal devices.

Fabrication and Enhanced Performance Evaluation of TiO2@Zn/Al-LDH for DSSC Application: The Influence of Post-Processing Temperature.

A sequence of dye-sensitized solar cells is proposed, utilizing TiO2@Zn/Al-layered double hydroxide (LDH) as their starting materials, in which Ruthenizer N719 was used as a photon absorber. The anticipated system was turned into sheet-like TiO2@mixed metal oxide (MMO) via post-processing treatment. The crystal quality indicated a relation to power conversion efficiency (PCE); this was combined with a comparable morphology profile. In detail, the optimum DSSC device exhibited average sheet-like thickness and a dye loading amount of 43.11 nm and 4.28 ×10-3 mM/cm-2, respectively. Concurrently, a considerable PCE enhancement of the optimum DSSC device (TiO2@MMO-550°) was attained compared to pristine MMO (0.91%), which could be due to boosted electron transfer efficiency. Of the fabricated devices, DSSC fabricated at 550° exhibited the highest PCE (1.91%), with a 35.6% enhancement compared to that obtained at 450°, as a result of its increased open-circuit voltage (3.29 mA/cm2) and short-circuit current (0.81 V). The proposed work delivers an enhanced efficiency as compared to similar geometries.

Zinc oxide doped with graphene quantum dots as improved electron transport layers for planner perovskite solar cells

Zinc oxide (ZnO), a material with excellent electron mobility and a low-temperature requirement for production, is a promising option for use as an electron transport layer in perovskite solar cells (PSCs). However, it does have the drawback of having a low open-circuit voltage ([Formula: see text]). Herein, to increase the [Formula: see text] parameter of ZnO-based PSCs, graphene quantum dots (GQDs) are incorporated into the ZnO precursor and used as desirable ETL for PSCs. The presence of GQDs in ZnO ETL facilitated photo-electrons at the ETL/perovskite interface by reducing charge transfer resistance in this interface. Compared to the net ZnO-based PSCs, solar cells using GQD-doped ZnO as ETL have better stability, comparable [Formula: see text], higher [Formula: see text], and FF. The best GQD-doped-ZnO ETL-based PSCs recorded the highest power conversion efficiency of 20.23% with [Formula: see text] of 1.130[Formula: see text]V. Meanwhile, the boosted PCE of FAPbI3-based PSCs is achieved due to the improved perovskite crystal quality, the effective defect passivation effect of GQDs at ZnO/FAPbI3 interface, and the increased electrical conductivity of ZnO ETL. In addition, the GQD-doped ETL devices showed higher ambient air stability than the devices with net ZnO ETLs.

Upgrade and performance evaluation of G8+ large-size cast mono-Si ingot

With the rapid growth of CZ mono-Si solar cell technology in the global market, the development of cast mono-Si faces challenges in terms of crystal quality and cost. This study introduces the first preparation of a G8+ large-size casting furnace by upgrading a G7 furnace to enhance casting mono-Si's performance and economic benefits. The effects of the G8+ casting furnace on the preparation cost of mono-Si ingot, crystal quality and its impact on the performance of solar cells were thoroughly investigated. Modifying the thermal field and optimizing the seed pavement strategy increased the G8+ cast mono-Si ingot weight to 1600 kg, raised the monocrystalline ratio to approximately 98 %, and achieved an effective yield exceeding 50 %. Solar cells made from G8+ cast mono-Si demonstrated electrical performance comparable to CZ mono-Si cells, achieving an average efficiency of 22.64 % with only a 0.3 % efficiency gap. Consequently, the upsizing of cast mono-Si ingots and adopting rigorous defect control strategies could significantly enhance the electrical performance and manufacturing productivity of cast mono-Si.

Modeling rough surfaces as a strategy to control the crystal quality, spatial and size distribution in semiconductor nanoparticles growth: A theoretical-experimental approach

Modeling rough surfaces as a strategy to control the crystal quality, spatial and size distribution in semiconductor nanoparticles growth: A theoretical-experimental approach

Combined effects of annealing treatment and compounding with FeOOH cocatalyst on efficiency and stability of BiVO4/Ag3PO4 photoanode

Bismuth vanadate (BiVO4) is a promising metal oxide photoabsorber for photoanode applications but is limited by its relatively short hole diffusion length resulting in severe charge complexation and limited performance. Herein, Ag3PO4 was compounded on BiVO4 through photodeposition of Ag followed by solution oxidation. The annealing of the composite BiVO4/Ag3PO4 heterojunction at 400 °C precipitated some Ag from Ag3PO4 on BiVO4/Ag3PO4 to form a new ternary photoanode BiVO4/Ag3PO4/Ag. Compared to the unannealed sample, the light trapping and crystal quality enhanced, resulting in increased photocurrent density of the annealed BiVO4/Ag3PO4 photoanode (4.46 mA cm−2) by 59.9 % when compared to the unannealed photoanode (2.79 mA cm−2). To further optimize the photoanode, co-catalyst iron hydroxyl oxide (FeOOH) was deposited to yield BiVO4/Ag3PO4/Ag/FeOOH photoanode with maximum photocurrent density of 4.71 mA cm−2 at 1.23 V (vs. reversible hydrogen electrode, VRHE), equivalent to about 3.7-fold the value of BiVO4 photoanode. The photoanode maintained 90.8 % of its initial current density after 3 h stability tests. Besides, the photoelectrocatalytic degradation of Rhodamine B pollutant by BiVO4/Ag3PO4/Ag and BiVO4/Ag3PO4/Ag/FeOOH photoanode showed performance enhancement when compared to BiVO4/Ag3PO4. Overall, the proposed strategy looks very promising for the rational fabrication of high-efficiency heterojunction photoanodes.

Tuning the mechanical and thermoelectric properties of self‐standing stretchable PEDOT:PSS/SDBS films

AbstractPoly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) has recently attracted significant attention as a potential candidate for small‐scale thermoelectric conversion because of its ease of doping, and solution processability. This study addressed the fabrication of self‐standing PEDOT:PSS films modified with sodium dodecylbenzene sulfonate (SDBS) surfactant, presuming different annealing temperatures. According to the investigation, optimizing the annealing temperature improves crystal quality and increases the efficiency of PEDOT:PSS films. The resulting PEDOT:PSS films showed the highest electrical conductivity of about 623.68 Scm−1 and maximum power factor of 25.87 μWm−1 K−2. In addition to confirming thermoelectric properties; SDBS surfactants are being investigated to plasticize PEDOT:PSS films at different concentrations and annealing temperatures. With an optimization in annealing temperature, the elongation at break value similarly improves; and the highest elongation at break was observed at 0.94 wt% SDBS concentration, reaching 32%. To completely understand the underlying reasons for this dependence, higher‐order structures and electronic states of polymer films have been examined using electronic reflectance spectroscopy and X‐ray diffraction analysis. Overall, the outcomes of this work show how important surfactants and their annealing temperature are for improving the mechanical and thermoelectric characteristics of self‐standing PEDOT:PSS films.

Dual-junction gallium nitride solar cells with hybrid tunnel junction layers

The authors reported the fabrication of a dual-junction (2J) GaN solar cell (SC) with hybrid tunnel junction (TJ) layers. Compared with the single-junction (1J) SCs, it was found from the XRD spectra that the crystal quality of the SC with TJ was almost identical. However, the efficiencies of bottom 1J SC, top 1J SC, and 2J SC increase from 1.18 to 1.07, 1.12 to 1.20, and 1.59 to 1.73, respectively, when the concentrated suns increased from 1 to 100 suns. It was found that the use of hybrid TJ layers could result in a higher conversion efficiency in 2J SC and was essential in SCs for serially connecting multiple active junctions.

Assessment of superconducting and structural stability of advanced Y-123 and Y-358 ceramics with Tb/Y substitution in main matrices

In this study, the performances of Y1-x(Tb)xBa2Cu3O7-δ (Y-123) and Y3-x(Tb)xBa5Cu8O18-δ (Y-358) advanced ceramics prepared by sol-gel preparation route are investigated by the advanced characterization methods including X-ray diffraction (XRD), temperature dependent resistivity (ρ-T), vibrating sample magnetometry (VSM), scanning electron microscopy (SEM) and energy distribution spectroscopy (EDS) measurements and theoretical approaches. The EDS results illustrated that the Tb impurities were replaced successfully by the yttrium sites in the YBa2Cu3O7-y main matrix. Similarly, it was noted that the presence of excess impurities in the crystal structure led to the oxygenation problems. Electrical properties were determined by temperature dependent resistivity (ρ-T) measurements. ρ-T results indicated that Tb doping reduced the critical transition temperature (Tc) values for the transition to superconductivity for all samples in two YBCO phases. Although it appears to have negative effects of Tb ions on the number of mobile charge carrier concentrations in the σ antibonding in-plane Cu-O bonds, bipolaron formations in the polarizable lattices, oxidation states, and amplitude of the pair wave function of both phases, the other valuable properties (morphology, crystallinity quality, interaction between adjacent layers, critical current density, and flux pinning ability) were noted to improve remarkably in the case of the optimum amount in the Y-123 superconducting phase. In this context, the Y-358 superconducting phase was harshly affected by the substitution due to the change of the ortorombicity, localization problem, impurity phases, structure stabilization, crystal structure quality, crystallization system, homogeneities of oxidation states, oxygen ordering degree, and impurity scatterings. Besides, the analysis of the fluctuation induced conductivity indicated that the Y-123 ceramics with longer c-axis coherence length and less anisotropic nature exhibited well superconducting properties. Additionally, the doping ratio of x=0.01 led to the formation and distribution of more nucleation centers for the thermal fluxon motions of 2D pancake vortices. Similarly, the optimum Tb doped Y-123 system exhibited much durable to applied field strengths due to the best interaction quality between grains. Accordingly, this study recommended that the Y1-x(Tb)xBa2Cu3O7-δ advanced ceramic structure with new functionalities can find much more application areas in innovative, heavy-industrial technologies, and advanced engineering-related sectors.

Perovskite Colloidal Nanocrystal Solar Cells: Current Advances, Challenges, and Future Perspectives.

The power conversion efficiencies (PCEs) of polycrystalline perovskite (PVK) solar cells (SCs) (PC-PeSCs) have rapidly increased. However, PC-PeSCs are intrinsically unstable without encapsulation, and their efficiency drops during large-scale production; these problems hinder the commercial viability of PeSCs. Stability can be increased by using colloidal PVK nanocrystals (c-PeNCs), which have high surface strains, low defect density, and exceptional crystal quality. The use of c-PeNCs separates the crystallization process from the film formation process, which is preponderant in large-scale fabrication. Consequently, the use of c-PeNCs has substantial potential to overcome challenges encountered when fabricating PC-PeSCs. Research on colloidal nanocrystal-based PVK SCs (NC-PeSCs) has increased their PCEs to a level greater than those of other quantum-dot SCs, but has not reached the PCEs of PC-PeSCs; this inferiority significantly impedes widespread application of NC-PeSCs. This review first introduces the distinctive properties of c-PeNCs, then the strategies that have been used to achieve high-efficiency NC-PeSCs. Then it discusses in detail the persisting challenges in this domain. Specifically, the major challenges and solutions for NC-PeSCs related to low short-circuit current density Jsc are covered. Last, the article presents a perspective on future research directions and potential applications in the realm of NC-PeSCs.

Evolution of 2-inch AlN single crystal grown on SiC seed via PVT method

The crystallization of aluminum nitride (AlN) hetero-epitaxial seeding on silicon carbide (SiC) by physical vapor transport (PVT), was systematically studied using XRD, UV–Vis, PL, SIMS, Raman and stress simulation. The evolution of crystal quality, transmittance, purity and residual stress of 2-inch AlN crystal in the growth process are described. The crystal quality of AlN growth layer gradually improves with the crystal thickness, as reflected in the decrease of XRD full width at half maximum (FWHM) from higher than 300 arcsec to 85 arcsec, SIMS yielded Si concentrations decreases from 1020 cm−3 to 1018 cm−3, absorbance coefficient @320 nm from 56 cm−1 to 9 cm−1, and simulated residual stress from 270 MPa to 50 MPa, indicating a comprehensively improved quality by simply increasing the crystal thickness of AlN crystal on SiC seed. Furthermore, a 2-inch crack-free AlN single crystal with high quality was successfully fabricated by inducing a layered structure.

Influence of pH on growth, structural, thermal, linear and nonlinear optical properties of L-asparagine monohydrate single crystal

This report presents investigation on influence of pH on growth, structural, thermal, linear and nonlinear optical properties of L-asparagine monohydrate (LAM) single crystal for the first time. Single crystals of LAM were grown at different pH by solution growth method by allowing slow evaporation of solvent. Crystal grown at pH 6.4 grows slowly as compare to other crystals grown at other pH values. The slight variation in lattice parameters of grown crystals has been confirmed by powder X-ray diffraction study. FT-IR study confirms the presence of functional groups of LAM in all grown crystals. Influence of pH on optical quality of crystals has been discussed. The crystal grown at pH 5.4 has maximum optical transparency and shows 2 and 20 % more transmission than crystals grown at pH 4.4 and 6.4, respectively. Other optical parameters like cutoff wavelength (λmax), band gap (Eg), linear refractive index (n), reflectance, extinction coefficient (k), electrical susceptibility (χ), optical conductivity(σop), electrical conductivity (σel) and Urbach energy (Eu) of all crystals have been evaluated from transmission data. The LAM crystal grown at pH 6.4 show high values of third order nonlinear optical parameters, as compare to other grown crystals, that attest its suitability for applications like higher harmonic generation, optical switching, optical limiting and other photonic applications over other grown crystals. Thermal stability of the grown crystals has been attested by TG-DTA study.

SnSe2 Quantum Dots and Chlorhexidine Acetate Suppress Synergistically Non-radiative Recombination Loss for High Efficiency and Stability Perovskite Solar Cells.

Non-radiative recombination losses limit the property of perovskite solar cells (PSCs). Here, a synergistic strategy of SnSe2QDs doping into SnO2 and chlorhexidine acetate (CA) coating on the surface of perovskite is proposed. The introduction of 2D SnSe2QDs reduces the oxygen vacancy defects and increases the carrier mobility of SnO2. The optimized SnO2 as a buried interface obviously improves the crystallization quality of perovskite. The CA containing abundant active sites of ─NH2/─NH─, ─C═N, CO, ─Cl groups passivate the defects on the surface and grain boundary of perovskite. The alkyl chain of CA also improves the hydrophobicity of perovskite. Moreover, the synergism of SnSe2QDs and CA releases the residual stress and regulates the energy level arrangement at the top and bottom interface of perovskite. Benefiting from these advantages, the bulk and interface non-radiative recombination loss is greatly suppressed and thereby increases the carrier transport and extraction in devices. As a result, the best power conversion efficiency (PCE) of 23.41% for rigid PSCs and the best PCE of 21.84% for flexible PSCs are reached. The rigid PSC maintains 89% of initial efficiency after storing nitrogen for 3100 h. The flexible PSCs retain 87% of the initial PCE after 5000 bending cycles at a bending radius of 5 mm.

Efficient and Highly Stable Lateral Perovskite Single‐Crystal Solar Cells through Crystal Engineering and Weak Ion Migration

AbstractThe lateral device structure for perovskite solar cells (PSCs) has garnered significant attention, primarily due to its elimination of the need for expensive transparent electrodes. However, the performance of lateral devices, which are more sensitive to crystal quality and charge carrier transport bottlenecks, has lagged far behind the predominant vertical PSCs. Herein, by modulating the crystal nucleation and growth processes of thin FA0.75MA0.25PbI3 (FA = formamidinium; and MA = methylammonium) single crystals, crystal quality and carrier transport are improved, resulting in a power conversion efficiency (PCE) of 12.64%, a record for lateral PSCs. Investigation of the device's stability reveals that iodide ion migration is suppressed due to a reduction in the iodide vacancy concentration combined with weak interface iodide ion migration. It is shown that the latter effect is a result of the perpendicular direction of the ion migration and the electric field in the lateral PSCs. Consequently, these lateral single‐crystal PSCs display remarkable operational stability, retaining 100% of their initial PCE after 1200 h of steady‐state output at the maximum power point voltage (Vmpp) under 1 sun illumination. This work highlights the advantages of lateral single‐crystal devices and their potential to address key ion migration issues of PSCs.