Metal–insulator–metal (MIM) thin-film capacitors having different dielectric layer thicknesses have been fabricated by forming bovine serum albumin (BSA) layers on electrically conductive and optically transparent indium tin oxide (ITO) coated polyethylene terephthalate (PET) substrates by using spin coating technique; the metal contacts at the top surface of BSA films have been deposited via thermal evaporation of gaseous phase aluminum. The capacitance-voltage (CV) measurements reveal the fact that the CV-characteristics of the BSA-based MIM capacitors show variable non-linearity with the change in the thickness of the insulating layer (BSA-layer). The experimentally measured CV-data are fitted with 2nd degree polynomial equations and it has been found that the quadratic voltage coefficient of capacitance (VCC) changes its sign from negative to positive as the thickness of the BSA-layer reduced below 2.0 µm. Finally, successful mechanical flexibility tests, as well as curvature tests have been carried out in order to confirm the possibility of using BSA-based MIM thin-film capacitors in flexible electronic applications in near future.
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