This work investigates the potential of Cs2AgBiBr6 as an absorber layer for solar cell applications and explores ways to advance the PV performance of cells by studying different electron transport layers (ETLs) and hole transport layers (HTLs). The energy band diagrams of the Cs2AgBiBr6 based cell are analyzed with different ETLs and HTLs to illustrate how electrons and holes flow within the cell. Specifically, one of the proposed cells substitutes TiO2 with chlorine passivated tin oxide (Cl@SnO2), while the other uses phenyl-C60 -butyric acid methyl ester on tin oxide (C60 -SnO2) as the ETL. The PV characteristics of the Cs2AgBiBr6-based solar cell is evaluated using SCAPS 1D. The PV performance parameters of Cs2AgBiBr6-based solar cells has been analyzed in search of optimum thickness of Cs2AgBiBr6 layer. Subsequently, the impact of bulk defect density in Cs2AgBiBr6 layer at the obtained optimum thickness i.e., 611 nm has also been explored. C60-SnO2 is found to have higher electron mobility, work function, and stability than Cl@SnO2, making it a better choice for the ETL. The resulting PV parameters for the cell Cl@SnO2/CS2AgBiBr6/Me4PACz are: VOC - 1.527 V, JSC - 10.42 mA/cm2, FF − 75.66%, and PCE - 12.08%. While the cell SnO2-C60/Cs2AgBiBr6/Me4PACz delivers PV parameters VOC- 1.53 V, JSC- 12.81 mA/cm2, FF - 79.15%, and PCE - 13.43%.