The paper presents the results of experimental observation of two types of stimulated emission (SE) under pulsed laser pumping at 532 nm in diamond with NV centers. A comprehensive spectroscopic characterization of multisectorial HPHT diamond plate was performed. At low pumping power, the stimulated emission from NV¯ centers was recorded as a broad (≥80 nm wide) band with a maximum at 706 nm in the {111} and {311} sectors of the diamond plate. As the pump power increased in the {111} sector, narrow-band stimulated emission (<10 nm wide) was detected, with a maximum at 716 nm and a luminescence impulse duration of 1.5–3 ns. As the pump density increased, a fine structure in the spectrum of narrow-band stimulated emission was revealed for the first time. The concentration of NV¯ centers in the {111} and {311} growth sectors was ≈10 ppm. However, there were considerable differences in the concentrations of C (35 and 3.5 ppm) and C+ centers (6.1 and 3.2 ppm, respectively). It was demonstrated that the presence of a high concentration of NV¯ centers is not the only necessary condition for the initiation of narrow-band SE in the 710–720 nm range. In the {311} sector, lighting at 360, 405, and 488 nm reduced the concentration of NV¯ centers by 15 % while increasing the concentration of C+ centers in the {311} sector. This effect is weak in the {111} sector. The authors suggested a model for narrow-band SE at the transition Valence Band → C+ with charge-state conversion of C↔C+ and NV0↔NV¯ centers. Further research on the dynamic processes is required in order to a detailed understanding of the operation of NV centers in diamond during SE generation.
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