Abstract Non-thermal plasma demonstrates a significant enhancement in efficiency when oxygen is added into the plasma mixture, particularly in processes such as thin-film oxide deposition, poly film removal, and photoresist mask ashing. This study examines the behavior of metastable argon states (1s5 and 1s3) in Ar-O2 mixture plasma, generated by a 50 Hz pulsed DC power supply under low-pressure conditions ranging from 1 mbar to 7 mbar. The densities of metastable argon states were assessed at varying conditions of current density, argon concentration, and filling gas pressure, utilizing optical emission spectroscopy (OES). The argon emission line ratio technique was employed to determine the plasma parameters. Experimental results indicate that electron density increases with current density, driven by enhanced excitation and ionization processes, while higher argon concentrations facilitate efficient ionization. The declining trend of the electron density with an increase in filling gas pressure is attributed to higher-pressure collisional processes. Metastable argon atoms exhibit heightened density with increased current density and argon percentage but decrease with elevated pressure due to loss processes. The regulation of metastable states is crucial for processes like etching, surface modification, and sterilization, providing a crucial step to the optimization and enhancing these applications.
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