The reaction mechanism of chemically amplified resist (CAR) after irradiation with ionizing radiation is important for developing extreme-ultraviolet and electron-beam lithography. The acid generation after the ionization is an essential reaction in CAR. In this study, the intermediate of the proton source of acid (a radical cation of the base polymer) in the presence of a photoacid generator (PAG) was investigated by the pulse radiolysis method. The deprotonation kinetics of the radical cation of poly(4-hydroxystyrene) (PHS) in solutions with and without PAG shows only a small difference. However, the yield of radical cations of poly(4-methoxystyrene) (PMOS) as a model of the resist with a protecting (releasing) group increases upon adding PAG. The formation of the ion pair between the PMOS radical cation and the dissociated anion with a lifetime of approximately 30 to 40 µs is suggested. The lower acid yield in PMOS than in PHS film is also discussed in terms of the stability of the radical cation.