Properties Of Solar Cells Research Articles

Hybrid Organic-Inorganic ZnO/PCBM Electron Transport Layer with Organic Lead Halide Perovskite Solar Cell Materials CH3NH3PbIX2, X is Cl or I

An experimental investigation has been undertaken to explore a variety of properties of organic perovskite solar cells (OPSCs) that are distinct in their photovoltaic response. In this study, OPSCs were constructed using zinc oxide, ZnO and [6,6]-phenylC[Formula: see text]-acid methyl ester, PCBM, as electron transfer materials (ETM), poly(3-hexylthiophene), P3HT, as hole transport material (HTM), and CH3NH3PbIX2 as a photosensitizer, where X is either Cl or I. The structural and optical characteristics of the ETM and HTM layers and the perovskite materials of OPSCs were investigated. The [Formula: see text]–[Formula: see text] and [Formula: see text]–[Formula: see text] curves of each solar cell prepared in OPSCs were measured using an integrated cell tester. This comprises a photovoltaic [Formula: see text]–[Formula: see text] measurement system and a solar simulation system. As a result of these results, the OPSC’s performance is evaluated. The calculations in this work suggest that the highest power conversion efficiency (PCE = 6.31%) was achieved in photovoltaic devices using CH3NH3PbI3 as the effective absorber layer and ZnO with PCBM as the ETM layer. At a light intensity of 100 mW/cm2, each OPSC cell was performed. Under the same conditions, the [Formula: see text]–[Formula: see text] curves were evaluated for each OPSC device. By improving the selection of organic and inorganic active materials in the ETM layer, OPSC performance may be improved.

Influence of temperature on bandgap shifts, optical properties and photovoltaic parameters of GaAs/AlAs and GaAs/AlSb p–n heterojunctions: insights from ab-initio DFT + NEGF studies

The III–V group semiconductors are highly promising absorbers for heterojunctions based solar cell devices due to their high conversion efficiency. In this work, we explore the solar cell properties and the role of electron–phonon coupling (EPC) on the solar cell parameters of GaAs/AlSb and GaAs/AlAs p–n heterojunctions using non-equilibrium Green function method (NEGF) in combination of ab-initio density functional theory (DFT). In addition, the band offsets at the heterointerfaces, optical absorption and bandgap shifts (BGSs) due to temperature are estimated using DFT + NEGF approach. The interface band gaps in heterostructures are found to be lower than bulk band gaps leading to a shift in optical absorption coefficient towards lower energy side that results in stronger photocurrent. The temperature dependent electronic BGS is significantly influenced by the phonon density and phonon energy via EPC. The phonon influenced BGS is found to change the optical absorption, photocurrent density and open-circuit voltage. In case of GaAs/AlSb junction, the interface phonons are found to have significantly higher energies as compared to the bulk phonons and thereby may have important implications for photovoltaic (PV) properties. Overall, the present study reveals the influence of EPC on the optical absorption and PV properties of GaAs/AlSb and GaAs/AlSb p–n heterojunctions. Furthermore, the study shows that the DFT + NEGF method can be successfully used to obtain the reasonable quantitative estimates of temperature dependent BGSs, optical absorption and PV properties of p–n heterojunctions.

Performance of Large Area n-TOPCon Solar Cells with Selective Poly-Si Based Passivating Contacts Prepared by PECVD Method.

Selective emitter (SE) technology significantly influences the passivation and contact properties of n-TOPCon solar cells. In this study, three mask layers (SiOx, SiNx, and SiOxNy) were employed to fabricate n-TOPCon solar cells with phosphorus (P)-SE structures on the rear side using a three-step method. Additionally, phosphosilicon glass (PSG) was used to prepare n-TOPCon solar cells with P-SE structure on the rear side using four-step method, and the comparative analysis of electrical properties were studied. The SiOx mask with a laser power of 20 W (O2 group) achieved the highest solar cell efficiency (Eff, 24.85%), The open-circuit voltage (Voc) is 2.4 mV higher than that of the H1 group, and the fill factor (FF) is 1.88% higher than that of the L1 group. Furthermore, the final Eff of solar cell is 0.17% higher than that of the L1 group and 0.20% higher than that of the H1 group. In contrast, using the four-step method and a laser power of 20 W (P2 group), a maximum Eff of 24.82% was achieved. Moreover, it exhibited an Voc, which is elevated by 3.2 mV compared to the H1 group, and FF increased by 1.49% compared to the L1 group. Furthermore, the overall Eff of the P2 group outperforms both the L1 and H1 groups by approximately 0.14% and 0.17%, respectively. In the four-step groups, the Eff of each laser condition group was improved compared with the L1 group and H1 group, The stability observed within the four-step method surpassed that of the three-step groups. However, in terms of full-scale electrical properties, the three-step method can achieve comparable results as those obtained from the four-step method. This research holds significant guiding implications for upgrading the n-TOPCon solar cell rear-side technology during mass production.

Influence of N-type electron acceptors in perovskite absorbers for stabilized perovskite absorbers for high-performance perovskite solar cells

In this study, the impact of n-type organic electron acceptors incorporated in perovskite absorbers via antisolvent-assisted crystallization process is investigated on optical, electrical, and photovoltaic properties of perovskite solar cells (PSCs). The study examines the effect of three representative electron acceptors, including fullerene derivative (PC61BM), non-fullerene acceptor (ITIC), and fluorinated non-fullerene acceptor (ITIC-4F). The findings demonstrate that the inclusion of these electron acceptors stabilizes perovskite absorbers due to strong interaction between the organic acceptors and [PbI6]4- octahedra, leading to the successful passivation of defective antisites. Furthermore, ITIC-4F plays a crucial role in the tailored electronic structure of the perovskite absorber surface, facilitating efficient charge transport and suppressing carrier recombination in the device. The synergetic effect of defect passivation and electrical doping achieved by ITIC-4F resulted in an efficiency improvement of 17.31 % of MAPbI3-based PSCs under 1-Sun illumination, exceeding that of the pristine device (15.62 %) under the same conditions. The device passivated with ITIC-4F also delivered an efficiency of 20.00 % under dim-light irradiation conditions for indoor photovoltaic applications. The results highlight the potential of n-type organic semiconducting molecules as effective additives in the antisolvent-assisted crystallization of perovskite absorbers, offering valuable insights into the design of organic semiconducting additives for improving the film quality of perovskite absorbers and achieving high-performance PSCs. The findings provide a foundation for future research aimed at enhancing the optoelectronic properties and photovoltaic performance of PSCs.

Heterostructure of TiO2 and SnS for enhancing the structural, optical and photovoltaic properties of solar cells

In this article a novel heterostructure of TiO2@SnS has been prepared by sol-gel technique for increase the current density and performance of solar cells. The main objective of this study is to prepare efficient solar cell materials with a simple chemical technique. XRD confirmed orthorhombic structure of SnS and tetragonal structure of TiO2 Raman analysis confirm the formation of heterostructure. Heterostructure TiO2@SnS showed large grain size (38 nm), small d-spacing (3.50 Å), and low value of Eg (2.7 eV). Photoluminesence show that peaks are shifted due to heterostructures and defects are remove. These materials' solar cells are created using the configuration glass/FTO/TiO2/SnS/P3HT/Au. TiO2@SnS based solar cell has high values of open circuit voltage (0.66 V), short circuit current density (4.57 mA cm−2), fill factor (0.79), and efficiency η (2.37 %). These findings reveals that heterostructure of TiO2@SnS could be a promising materials for improving the efficiency of solar cells.

Long-chain organic molecules enable mixed dimensional perovskite photovoltaics: a brief view.

The remarkable optoelectronic properties of organometal halide perovskite solar cells have captivated significant attention in the energy sector. Nevertheless, the instability of 3D perovskites, despite their extensive study and attainment of high-power conversion efficiency, remains a substantial obstacle in advancing PSCs for practical applications and eventual commercialization. To tackle this issue, researchers have devised mixed-dimensional perovskite structures combining 1D and 3D components. This innovative approach entails incorporating stable 1D perovskites into 3D perovskite matrices, yielding a significant improvement in long-term stability against various challenges, including moisture, continuous illumination, and thermal stress. Notably, the incorporation of 1D perovskite yields a multitude of advantages. Firstly, it efficiently passivates defects, thereby improving the overall device quality. Secondly, it retards ion migration, a pivotal factor in degradation, thus further bolstering stability. Lastly, the inclusion of 1D perovskite facilitates charge transport, ultimately resulting in an elevated device efficiency. In this succinct review, we thoroughly encapsulate the recent progress in PSCs utilizing 1D/3D mixed-dimensional architectures. These advancements encompass both stacked bilayer configurations of 1D/3D structures and mixed monolayer structures of 1D/3D. Additionally, we tackle critical challenges that must be surmounted and offer insights into the prospects for further advancements in this domain.

Predicting the bandgap and efficiency of perovskite solar cells using machine learning methods.

Rapid and accurate prediction of bandgaps and efficiency of perovskite solar cells is a crucial challenge for various solar cell applications. Existing theoretical and experimental methods often accurately measure these parameters; however, these methods are costly and time-consuming. Machine learning-based approaches offer a promising and computationally efficient method to address this problem. In this study, we trained different machine learning(ML) models using previously reported experimental data. Among the different ML models, the CatBoostRegressor performed better for both bandgap and efficiency approximations. We evaluated the proposed model using k-fold cross-validation and investigated the relative importance of input features using Shapley Additive Explanations (SHAP). SHAP interprets valuable insights into feature contributions of the prediction of the proposed model. Furthermore, we validated the performance of the proposed model using an independent dataset, demonstrating its robustness and generalizability beyond the training data. Our findings show that machine learning-based approaches, with the aid of SHAP, can provide a promising and computationally efficient method for the accurate and rapid prediction of perovskite solar cell properties. The proposed model is expected to facilitate the discovery of new perovskite materials and is freely available at GitHub (https://github.com/AsadKhanJBNU/perovskite_bandgap_and_efficiency.git) for the perovskite community.

Excitation Energy Transfer via Electron Transfer between a Semi‐Conducting Single Walled‐Carbon Nanotube and Encapsulated Zinc Porphyrin or Photovoltaic Application

AbstractIn this paper, the encapsulating effect of single molecule of zinc porphyrin (Zn−P) inside semiconducting single walled carbon nanotubes (NT17) on the stability and optoelectronic properties of organic solar cells is investigated, assuming that this nano‐hybrid system will serve as the active layer in solar cell device. Making use of density functional theory (DFT), we looked at the optoelectronic characteristics of the isolated Zn−P molecules as well as two different configurations of the hybrid system that has a single Zn−P molecule inserted into NT17 (Zn−P@NT17 and Zn−P2@NT17). The addition of a zinc atom at the core of a porphyrin molecule results in the emergence of novel electronic and chemical characteristics, leading to distinct behavior compared to a free‐base porphyrin. These distinctions hold substantial implications for a range of applications, encompassing catalysis, sensing, and energy conversion processes. According to the study's outcomes, a charge transfer (CT) between the Zn−P molecules and the NT17 nanotube caused the structure to remain stable, and assuming to the electronic and optical computations the CT in Zn−P@NT17 hybrid nanosystems has been identified, along with its orientation. The results show that type II heterojunctions on filled semiconducting carbon nanotubes are likely to make them a viable choice for charge and light transport in the active layer, which can help create filled NT‐based OSCs that are extremely efficient.

Unveiling symmetry: a comparative analysis of asymmetric and symmetric non-fullerene acceptors in organic solar cells

This study investigates the design and analysis of symmetric and asymmetric non-fullerene acceptors (NFAs), focusing on the burgeoning interest in asymmetric NFAs due to their exceptional solar cell properties.

A A Comparative Study on Optoelectronic Properties of Dye-sensitized Solar Cells using TiO2-ZnO Photo anodes

A A Comparative Study on Optoelectronic Properties of Dye-sensitized Solar Cells using TiO2-ZnO Photo anodes

Evaluating the influence of novel charge transport materials on the photovoltaic properties of MASnI3 solar cells through SCAPS-1D modelling.

In recent decades, substantial advancements have been made in photovoltaic technologies, leading to impressive power conversion efficiencies (PCE) exceeding 25% in perovskite solar cells (PSCs). Tin-based perovskite materials, characterized by their low band gap (1.3 eV), exceptional optical absorption and high carrier mobility, have emerged as promising absorber layers in PSCs. Achieving high performance and stability in PSCs critically depends on the careful selection of suitable charge transport layers (CTLs). This research investigates the effects of five copper-based hole transport materials and two carbon-based electron transport materials in combination with methyl ammonium tin iodide (MASnI3) through numerical modelling in SCAPS-1D. The carbon-based CTLs exhibit excellent thermal conductivity and mechanical strength, while the copper-based CTLs demonstrate high electrical conductivity. The study comprehensively analyses the influence of these CTLs on PSC performance, including band alignment, quantum efficiency, thickness, doping concentration, defects and thermal stability. Furthermore, a comparative analysis is conducted on PSC structures employing both p-i-n and n-i-p configurations. The highest-performing PSCs are observed in the inverted structures of CuSCN/MASnI3/C60 and CuAlO2/MASnI3/C60, achieving PCE of 23.48% and 25.18%, respectively. Notably, the planar structures of Cu2O/MASnI3/C60 and CuSbS2/MASnI3/C60 also exhibit substantial PCE, reaching 20.67% and 20.70%, respectively.

The structural, optical and photovoltaic properties of Zn-doped MAPbI2Br perovskite solar cells.

The spin coating method was used to deposit MAPbI2Br films on FTO-glass substrates. Zn2+ (zinc) doping was used for these films at intensity rates of 2% and 4%, respectively. XRD analysis proved that MAPbI2Br films had a cubic structure and a crystalline character. 2% Zn doping into the MAPbI2Br film had a modest large grain size (38.09 nm), Eg (1.95 eV), high refractive index (2.66), and low extinction coefficient (1.67), according to XRD and UV-vis analyses. To facilitate and enhance carrier transit, at contacts as well as throughout the bulk material, the perovskite's trap-state densities decreased. The predicted MAPbI2Br valence and conduction band edges are -5.44 and -3.52, respectively. The conduction band (CB) edge of the film that was exposed to Zn atoms has been pressed towards the lower value, assembly it a better material for solar cells. EIS is particularly useful for understanding charge carrier transport, recombination mechanisms, and the influence of different interfaces within the device structure. Jsc is 11.09 mA cm-2, Voc is 1.09, PCE is 9.372% and FF is 0.777. The cell made with the 2% Zn doped into the MAPbI2Br film demonstrated a superior device.

The effect of rigid-block length in elastomer-containing photoactive block copolymers on the photovoltaic and mechanical properties of polymer solar cells

The development of elastomer-containing photoactive block copolymers with regulated rigid-block lengths results in organic solar cells with high power conversion efficiency (17.3%) and mechanical robustness (toughness = 1.8 MJ m−3).

A machine learning approach for in silico prediction of the photovoltaic properties of perovskite solar cells based on dopant-free hole-transport materials

Machine learning approaches for building robust autoQSPR models for the prediction of the photovoltaic properties of PSCs based on dopant free hole transport materials.

Enhancing the charge transport and luminescence properties of ethyl 4-[(E)-(2-hydroxy-4-methoxyphenyl)methyleneamino]benzoate through complexation: a DFT and TD-DFT study.

Organic light emitting diode (OLED) and organic solar cell (OSC) properties of ethyl 4-[(E)-(2-hydroxy-4-methoxyphenyl)methyleneamino]benzoate (EMAB) and its Pt2+, Pd2+, Ni2+, Ir3+, Rh3+, and Zn2+ complexes have been theoretically studied herein. Geometry optimizations have been performed via the r2SCAN-3c composite method while single-point calculations have been carried out at the PBE0-D3(BJ)/def2-TZVP level of theory. Results have shown that complexation with selected metal ions improves hole and electron transfer rates in Pt[EMAB]2 and Rh[EMAB]2 +. Specifically, the hole transport rate of Pt[EMAB]2, (k ct(h) = 6.15 × 1014 s-1), is found to be 44 times greater than that of [EMAB], (k ct(h) = 1.42 × 1013 s-1), whereas electron transport rate of Pt[EMAB]2, (k ct(e) = 4.6 × 1013 s-1) is 4 times that of EMAB (k ct(e) = 1.1 × 1013 s-1). Charge mobility for holes and electrons are equal to 19.182 cm2 V-1 s-1 and 1.431 cm2 V-1 s-1 respectively for Pt[EMAB]2, and equal to 4.11 × 10-1 cm2 V-1 s-1 and 3.43 × 10-1 cm2 V-1 s-1 for EMAB respectively. These results show that, charge transport in EMAB can be tuned for better performance through complexation with transition metals such as Pt2+. OSC properties of the complexes were also studied by comparing their HOMO/LUMO energies with those of (6,6)-phenyl-C61-butyric acid methyl ester (PCBM) and poly(3-hexylthiophene) (P3HT). It turned out that the energy gap of EMAB reduced significantly upon complexation from 2.904 eV to 0.56 eV in [Rh(EMAB)2]+ and to a lesser extent in the other complexes. The energy values of the HOMOs remained higher than those of PCBM while those of the LUMOs were found to be greater than that of P3HT with the exception of [Rh(EMAB)2]+. These findings show that the aforementioned species are good electron donors to PCBM. The open circuit voltage, V OC, of the compounds ranged between 0.705 × 10-19 V and 6.617 × 10-19 V, values that are good enough for practical usage in OSC applications. The UV-visible absorption spectra revealed absorption maxima well below 900 nm in all compounds, vital in the efficient functioning of solar cells. In general, this study has shown that platinoid complexation of EMAB can successfully modify both its OLED and OSC properties, making them better precursors in the electronic industry.

Impact of Nitroxyl Radicals on Photovoltaic Conversion Properties of Dye-Sensitized Solar Cells.

Nitroxyl radicals, characterized by unique redox properties, have been investigated for their potential influence on the photovoltaic conversion properties of dye-sensitized solar cells (DSSCs). In this study, we investigated the influence of nitroxyl radicals as donor sites in DSSCs. We observed that the redox activity of nitroxyl radicals significantly enhanced the photovoltaic conversion efficiency of DSSCs; this finding can offer new insights into the application of these radicals in solar energy conversion. Furthermore, we found that increasing the proportion of nitroxyl radicals improved the DSSC performance. Through a combination of experimental and analytical approaches, we elucidated the mechanism underlying this enhancement and highlighted the potential for more efficient DSSCs using nitroxyl radicals as key components. These findings provide new avenues for developing advanced DSSCs with improved performances and sustainability.

Abnormal high stability halide perovskite thin films and solar cells to alpha and gamma irradiations with varying fluence

Solar cells (SCs) and thin films made of methylammonium lead tri-iodide (MAPbI3) have demonstrated remarkable robustness when irradiated with alpha (He2+) and gamma radiations from americium-241. This study investigates changes in the structure, absorption, and surface morphology of perovskite thin films, as well as the photoelectronic properties of MAPbI3 SCs, with and without irradiation with He2+. According to the XRD analysis, tetragonal MAPbI3 showed increased crystallinity and a decrease in compression micro-strain with an increased flux of He2+. UV–Vis absorption remained unchanged until the flux exceeded 7.36 x 1012 He2+ cm−2. The bandgaps for irradiated films decreased similarly to pristine films up to a dose of 3.07 x 1012 He2+cm−2, with significant differences observed beyond this point. Digital images showed significant changes in thin films irradiated at fluences exceeding 3.07 x 1012 He2+ cm−2, with pits forming in grains responsible for the changes, confirmed by scanning electron microscopy. In conclusion, this study found that MAPbI3 thin films and SCs can withstand doses of He2+ up to 3.07 x 1012 He2+ cm−2 in a He2+ radiation environment.

Probing the Interfacial Properties of ACIGS Solar Cells with Targeted Proton Irradiation

ACIGS solar cells are exposed to targeted radiation to probe the front and back interfaces of the absorber to assess the impact of space environments on these systems. These data suggest ACIGS cells are more radiation‐hard than early CIGS devices likely due to the lower defect densities and more ideal interfaces in the ACIGS system. A combination of J–V and external quantum efficiency measurements indicates some improvement in the performance of the device due to the effects of local heating in the dominant ionizing electronic energy loss regime of proton irradiation that anneal the upper CdS/ACIGS interface. However, nonionizing energy losses at the base of the solar cell also appear to inhibit minority carrier collection from the back of the cell at the ACIGS/Mo interface, which is discussed in terms of defect‐mediated changes in the doping profile, the Ga/Ga+In ratio, and impurity composition after proton irradiation.

Tunneling-enhanced interface recombination and current loss curves in kesterite solar cells

An approach to developing durable, light-weight, flexible, and semi-transparent solar cells is through the utilization of Cu2ZnSnS4 (CZTS) monograin powder. However, CZTS cells are currently far from their theoretically predicted efficiency. One reason for this is tunneling-enhanced interface recombination, which leads to a decrease in VOC and FF under higher forward bias conditions. We calculated the current loss curves JR–V of three different CZTS monograin layer solar cells for this report by subtracting the dark J–V curve from the light curve and adding a short circuit current density JSC. By quantum tunneling of holes through a bell-shaped potential barrier with additional recombination at the interface between CdS and CZTS, the shape of the current loss curve was examined. We showed that using the derivative dJR/dV of the measured curves allows us to simplify our analysis. The maximum position of this curve is proportional to the effective barrier height, and the intensity and the full width at half maximum give information about the width. At lower temperatures, the effective barrier height increases according to our theoretical model. We demonstrated that the properties of CZTS solar cells may be significantly enhanced by eliminating current loss at higher bias voltages.

Improving the Device Performance of CZTSSe Thin-Film Solar Cells via Indium Doping.

Cation incorporation emerges as a promising approach for improving the performance of the kesterite Cu2ZnSn(S,Se)4 (CZTSSe) device. Herein, we report indium (In) doping using the chemical bath deposition (CBD) technique to enhance the optoelectronic properties of CZTSSe thin-film solar cells (TFSCs). To incorporate a small amount of the In element into the CZTSSe absorber thin films, an ultrathin (<10 nm) layer of In2S3 is deposited on soft-annealed precursor (Zn-Sn-Cu) thin films prior to the sulfo-selenization process. The successful doping of In improved crystal growth and promoted the formation of larger grains. Furthermore, the CZTSSe TFSCs fabricated with In doping exhibited improved device performance. In particular, the In-CZTSSe-2-based device showed an improved power conversion efficiency (PCE) of 9.53%, open-circuit voltage (Voc) of 486 mV, and fill factor (FF) of 61% compared to the undoped device. Moreover, the small amount of In incorporated into the CZTSSe absorber demonstrated reduced nonradiative recombination, improved carrier separation, and enhanced carrier transport properties. This study suggests a simple and effective way to incorporate In to achieve high efficiency and low Voc loss.