Properties Of Semiconductors Research Articles

Internalization of Ionic Transport Ability of Polymer Semiconductors via Photochemical Cross-Linking.

In the field of organic electronics and optics, there is rapidly growing interest in enhancing both charge transport and the ion transport properties of semiconductors, particularly in light of recent emerging technologies such as organic electrochemical transistors (OECTs) and switchable organic nanoantennas. Herein, we propose a universal method for internalizing the ionic transport properties of conventional polymer semiconductors. The incorporation of a tetrafluorophenyl azide-based photochemical cross-linker with a tetraethylene glycol bridge into poly(3-hexylthiophene) (P3HT) significantly enhances the performance and operational stability of ion-gating devices. Changes in the characteristics of the OECTs with cross-linked P3HT are minimal even after 100 cycles of operation; moreover, the cross-linked OECTs exhibit faster switching properties. In addition, the enhanced doping efficiency allows for the clear observation of plasmon resonances in nanostructured, highly doped P3HT. We believe that the proposed technique for internalizing ionic transport abilities can be applied to various ion-based semiconductor applications.

Semiconducting Cu(I) Framework for Room Temperature NO2 Sensing via Efficient Charge Transfer.

Efficient room-temperature sensors for toxic gases are essential to ensure a safe and healthy life. Conducting frameworks have shown great promise in advancing gas sensing technologies. In this study, two new organic-inorganic frameworks [Cu2X2(PPh3)2(L)]n, CP1 (X = I) and CP2 (X = Br) have been synthesized using (pyridin-4-yl)-N-(4H-1,2,4-triazol-4-yl)methanimine (L) and triphenylphosphine. These frameworks exhibit distinct structural arrangements to generate 1D coordination polymers (CPs). Due to their semiconducting properties, both CPs are fabricated into conventional interdigitated electrodes by drop-casting. Benefitting from the higher electron density of the Cu(I) center, CP1 demonstrates selective sensing for NO2 gas with excellent sensitivity and reversibility. The material offers one of the best room temperature NO2 chemiresistive sensing performances among the MOF/CP-based materials with ultrafast response time (15.5 s @10 ppm). Additionally, convenient synthesis and ease of device fabrication for sensing give the material a distinct advantage. The experimental and theoretical findings collectively suggest that the adsorption of NO2 on the material's surface and the concomitant effective charge transfer between Cu(I) and NO2 are key to its efficacious gas sensing capabilities.

Semiconducting Overoxidized Polypyrrole Nano-Particles for Photocatalytic Water Splitting.

Capturing sunlight to fuel the water splitting reaction (WSR) into O2 and H2 is the leitmotif of the research around artificial photosynthesis. Organic semiconductors have now joined the quorum of materials currently dominated by inorganic oxides, where for both families of compounds the bandgaps and energies can be adjusted synthetically to perform the Water Splitting Reaction. However, elaborated and tedious synthetic pathways are necessary to optimize the photophysical properties of organic semiconductors. This study reports here, that when pyrrole dissolved distilled water is exposed to high energy radiation, this leads to the formation of nanostructured spherical polypyrrole (Nano-PPy) particles that are characterized as overoxidized polypyrrole. Electrochemical studies and Tauc's plot highlight the production of a semiconducting material with a bandgap of ≈1.8eV with the conduction band at ≈-0.5V and a valence band at ≈+1.3V vs NHE. When suspended in water and under irradiation at wavelengths higher than 420nm, Nano-PPy materials lead to O2 evolution, while electrons and protons can be recovered in the form of reduced quinone. Interestingly, upon intermittent visible irradiation and dark phases, a consumption of the evolved O2 from oxidation of water is observed. This concomitant O2 reduction is found to produce H2O2.

Direct observations of nucleation and early-stage growth of Au-catalyzed GaAs nanowires on Si(111).

Developing a reliable procedure for the growth of III-V nanowires (NW) on silicon (Si) substrates remains a significant challenge, as current methods rely on trial-and-error approaches with varying interpretations of critical process steps such as sample preparation, Au-Si alloy formation in the growth reactor, and nanowire alignment. Addressing these challenges is essential for enabling high-performance electronic and optoelectronic devices that combine the superior properties of III-V NW semiconductors with the well-established Si-based technology. Combining conventional scalable growth methods, such as Metalorganic Chemical Vapor Deposition (MOCVD) with in situ characterization using Environmental Transmission Electron Microscopy (ETEM-MOCVD) enables a deeper understanding of the growth dynamics, if that knowledge is transferable to the scalable processes. We report on successful epitaxial growth of Au-catalyzed GaAs NWs on Si(111) substrates using micro-electromechanical system (MEMS) chips with monocrystalline Si-cantilevers in both conventional MOCVD and ETEM-MOCVD systems. The conventional MOCVD provided a framework for initial parameter tuning, while ETEM-MOCVD offered valuable insights into early nucleation and catalyst-substrate interactions. Our findings show that nucleation is significantly influenced by the removal of native oxide layers and the initial formation of the Au-Si alloy. Our in situ studies revealed different NW-substrate interfaces, essential for optimizing the epitaxial growth process. We identified three typical configurations of NW "roots", each impacted by growth conditions and preparation steps, affecting the structural and potentially the optical properties of the NWs. Similarly, doping from the Si-substrate may affect both optical and electrical properties; however, compositional analysis revealed no traces of Si in NWs post-nucleation and a small amount in the catalytic droplet. Our research highlights the importance of in situ studies for a comprehensive understanding of nucleation mechanisms, paving the way for optimizing III-V NW growth on Si substrates and developing high-performance III-V/Si devices.

Preparation of p-type Fe2O3 nanoarray and its performance as photocathode for photoelectrochemical water splitting

Photoelectrochemical (PEC) water splitting has the potential to convert solar energy into chemical energy, emerging as a promising alternative to fossil fuel combustion. In PEC systems, p-type semiconductors are particularly noteworthy for their ability to directly produce hydrogen. In this work, Fe2O3 with p-type semiconductor properties grown directly on the conductive glass substrate were successfully synthesized through a simple one-step hydrothermal method. The analysis results indicate that the Fe2O3 exhibits a spindle shaped nanoarray structure and possesses a small band gap, thereby demonstrating excellent photoelectrochemical performance as a photocathode with photocurrent density of −23 μA cm−2 at 0.4 V vs. RHE. Further band structure tests reveal that its conduction band position is more negative compared to the hydrogen evolution potential, highlighting its significant potential as a photocathode material.

Functionalized Interlayers in Self‐Powered Organic Photodiodes for Enhanced Near‐Infrared Sensing

AbstractThere is a growing interest in fabricated organic material‐based photodiodes (OPDs) since they are lightweight, flexible, and cost‐effective to manufacture. Notably, they exhibit near‐infrared photo‐sensing capabilities that are self‐powered, a feature attributed to the tunable optical properties of organic semiconductor (OSC) materials. Nonetheless, the application of OPDs in the semiconductor industry encounters challenges compared to their inorganic counterparts, such as low sensitivity and limited durability. In this study, a self‐powered OPD using a poly[4,8‐bis(5‐(2‐ethylhexyl)thiophen‐2‐yl)benzo [1,2‐b:4,5‐b′]dithiophene‐2,6‐diyl‐alt‐(4‐(2‐ethylhexyl)‐3‐fluorothieno[3,4‐b]thiophene‐)‐2‐carboxylate‐2‐6‐diyl)]:biaxial active layer of phenyl‐C70‐butyric acid methyl ester (PTB7‐Th:PC70BM) and an organic hole transport layer (HTL) composed of poly(3,4‐ethylenedioxythiophene) and poly(styrene sulfonate) (PPY:PSS) is developed. These results highlight the effectiveness of PPY:PSS as an HTL, demonstrating distinct improvements in efficiency, photosensitivity, photo‐detectivity, and operational stability of the OPD when the weight ratio between the PPY and PSS is 1:2.

Chiral induction at the nanoscale and spin selectivity in electron transmission in chiral methylated BEDT-TTF derivatives.

Great efforts have been made in the last few decades to realize electronic devices based on organic molecules. A possible approach in this field is to exploit the chirality of organic molecules for the development of spintronic devices, an applicative way to implement the chiral-induced spin selectivity (CISS) effect. In this work we exploit enantiopure tetrathiafulvalene (TTF) derivatives as chiral inducers at the nanoscale. The aim is to make use of TTF's well-known and unique semiconducting properties, to be expressed in the fields of enantio-selectivity and the chiral-induced spin selectivity (CISS) effect. The experimental results shown in this paper further demonstrate how chirality and spin are deeply interrelated, as foreseen within the CISS effect theory, paving the way for the application of TTF derivatives in the field of spintronics. In this work, we demonstrate that tetramethyl-bis(ethylenedithio)-tetrathiafulvalene (TM-BEDT-TTF) (1) behaves as an efficient spin filter, as evidenced by magneto-atomic force microscopy (mc-AFM) measurements. Additionally, it is shown to be effective in transferring chirality to CdS/CdSe core-shell nanoparticles, as inferred from the analysis of circularly resolved photoluminescence spectra. This makes 1 a promising candidate for a variety of applications, ranging from plasmonics to quantum computing.

Mapping the Energy Carrier Diffusion Tensor in Perovskite Semiconductors.

Understanding energy transport in semiconductors is critical for the design of electronic and optoelectronic devices. Semiconductor material properties, such as charge carrier mobility or diffusion length, are commonly measured in bulk crystals and determined using models that describe transport behavior in homogeneous media, where structural boundary effects are minimal. However, most emerging semiconductors exhibit nano- and microscale heterogeneity. Therefore, experimental techniques with high spatial resolution paired with models that capture anisotropy and domain boundary behavior are needed. We develop a diffusion tensor-based framework to analyze experimental photoluminescence (PL) diffusion maps accounting for material nano- and microstructure. Specifically, we quantify both carrier transport and recombination in single crystal and polycrystalline lead halide perovskites by globally fitting diffusion maps with spatial, temporal, and PL intensity data. We reveal a 29% difference in principal diffusion coefficients and alignment between electronically coupled grains for CH3NH3PbI3 polycrystalline films. This framework allows for understanding and optimizing anisotropic energy transport in heterogeneous materials.

Temperature‐Dependent Charge‐Carrier Dynamics in Lead‐Halide Perovskites: Indications for Dynamic Disorder Dominated Scattering Mechanism

AbstractLead‐halide perovskites have emerged as a promising material class in light‐harvesting and light‐emitting applications due to their exceptional semiconductor properties. Nonetheless, crucial semiconducting properties such as the charge carrier scattering mechanism and its impact on recombination dynamics are not well studied. Here, five different lead‐halide perovskite compositions are systematically examined to determine their temperature‐dependent mobility, and the prevalent scattering mechanisms involved are identified. Dynamic disorder is proposed to be the predominant scattering mechanism at room temperature and above, as evidenced by a change in the power‐law Tm. Notably, the onset temperature for this behavior varies with the perovskite composition. Additionally, it is found that this scattering process coincides with changes in fast‐trapping behavior in MAPbI3 perovskite, which in turn alters recombination dynamics such as carrier lifetime and diffusion length. These results suggest that this scattering mechanism contributes to the defect tolerance of perovskites, providing valuable insights for further investigations.

Infinite Organic Solid-Solution Semiconductors with Continuous Evolution in Film Morphology, Crystalline Lattice and Electrical Properties.

Constructing a solid solution is an effective strategy for regulating the properties of composite organic semiconductors. However, there presents significant challenges in fabrication and understanding of organic solid-solution semiconductors. In this study, infinite solid-solution semiconductors are successfully achieved by integrating rod-like organic molecules, thereby overcoming the limitations of current organic composite semiconductors. Within these solid solutions, one type of molecule are incorporated into the crystalline lattice of another through random substitution. The continuous evolution in film morphology, crystalline lattice parameters and physical properties are observed as component ratios vary, accompanying with changes in the growth behavior of films. Molecular-level intercalation is evidenced by Davydov splitting, photoluminescence spectroscopy, and optical absorption analyses. Moreover, the continuous variation in ionization potential is demonstrated through organic Schottky diodes. This advancement in organic solid solutions can not only satisfy diverse requirements for device fabrication but also facilitate novel designs in device architecture.

Simulating Ionized States in Realistic Chemical Environments with Algebraic Diagrammatic Construction Theory and Polarizable Embedding.

Theoretical simulations of electron detachment processes are vital for understanding chemical redox reactions, semiconductor and electrochemical properties, and high-energy radiation damage. However, accurate calculations of ionized electronic states are very challenging due to their open-shell nature, importance of electron correlation effects, and strong interactions with chemical environment. In this work, we present an efficient approach based on algebraic diagrammatic construction theory with polarizable embedding that allows to accurately simulate ionized electronic states in condensed-phase or biochemical environments (PE-IP-ADC). We showcase the capabilities of PE-IP-ADC by computing the vertical ionization energy (VIE) of thymine molecule solvated in bulk water. Our results show that the second- and third-order PE-IP-ADC methods combined with the basis of set of triple-ζ quality yield a solvent-induced shift in VIE of -0.92 and -0.93 eV, respectively, in an excellent agreement with experimental estimate of -0.9 eV. This work demonstrates the power of PE-IP-ADC approach for simulating charged electronic states in realistic chemical environments and motivates its further development.

Synthesis and characterization of Cu2O and CuO nanoparticles in distilled water using electrochemical process

The synthesis of metal oxide semiconductors has garnered considerable attention due to their wide-ranging applications in fields such as electronics, optoelectronics, catalysis, and photovoltaics. This study presents the synthesis of copper oxide nanoparticles (NPs) in distilled water through a two-probe electrochemical process at varying applied voltages. The synthesized copper oxide NPs exhibited a color spectrum from light to dark brown, suggesting the formation of copper oxide in the distilled water. Preliminary observations utilizing the Tyndall effect with a red laser light confirmed the colloidal nature of the solution. Photoluminescence emissions highlighted the semiconducting properties of the synthesized copper oxide NPs. The copper oxide NPs exhibited small size into quantum dots (QDs) at lower applied voltages, whereas higher voltages produced larger sizes. The appearance of ring-like patterns suggested a polycrystalline structure, which was further corroborated by selected area electron diffraction analysis, confirming the crystalline structure of Cu2O at low voltages and CuO at higher voltages. This study, therefore, demonstrates a straightforward method for synthesizing copper oxide using a two-probe electrochemical process, with the potential to produce QD and NP structures by modulating the applied voltage

Flat-Band Electronic Bipolarity in a Janus and Kagome van der Waals Semiconductor Nb3TeI7.

Janus materials, a novel class of materials with two faces of different chemical compositions and electronic polarities, offer significant potential for various applications with catalytic reactions, chemical sensing, and optical or electronic responses. A key aspect for such functionalities is face-dependent electronic bipolarity, which is usually limited by the chemical distinction of terminated surfaces and has not been exploited in the semiconducting regime. Here, it is showed that a Janus and Kagome van der Waals (vdW) material Nb3TeI7 has ferroelectric-like coherent stacking of the Janus layers and hosts strong electronic bipolar states in the semiconducting regime. A large potential difference of ∼ 0.7eV between the I4 and TeI3 terminated surfaces is observed, despite only one fourth of the I atoms being replaced by Te atoms on one side of the layers. Additionally, robust semiconducting properties with the face-dependent n-type and p-type field-effect transistor behaviors are demonstrated. These unique properties are attributed to Nb 4d orbital flat bands of the breathing-Kagome lattice, of which significantly large electron mass makes the semiconducting properties immune to impurity doping, and inherent strong electron correlation enhances asymmetric electron distribution, thereby amplifying a built-in electric field. These findings highlight that naturally-grown Janus and Kagome vdW semiconductors provide a promising material platform for utilizing strong electronic bipolarity in 2D-material-basedapplications.

Ray Tracing of Aluminum Nitride as Anti-Reflective Coating on Silicon for Photovoltaic Devices

III-nitride materials have attracted wide interests for optoelectronic and electronic applications due to their unique and tunable semiconducting and optical properties. Aluminum nitride (AlN) exhibits an ultra-wide bandgap of 6.2[Formula: see text]eV and wide transparency window from ultraviolet to mid-infrared, making it a promising candidate as an anti-reflective coating (ARC) material on silicon for photovoltaic (PV) devices. In this work, ray tracing is utilized to investigate the optical properties of AlN ARC on 150[Formula: see text][Formula: see text]m-thick c-Si absorber. AlN with thicknesses of 60–90[Formula: see text]nm are studied and the effects towards light absorption (within 300–1200[Formula: see text]nm wavelength region) and short-circuit current density ([Formula: see text] of the solar cell are analyzed. In the ray tracing, planar c-Si absorber without an ARC is used as a reference. The reference condition exhibits weighted average reflection (WAR) of 39.8% within the 300–1200[Formula: see text]nm wavelength region with [Formula: see text] of 25.49[Formula: see text]mA/cm2. AlN with 80[Formula: see text]nm is found to be the optimum ARC thickness, which leads to the enhanced broadband absorption with WAR of 19.7% within the spectral region. This thickness represents the highest [Formula: see text] achieved in this work (35.71[Formula: see text]mA/cm[Formula: see text].

Synthesis and Optoelectronic Characterizations of Conjugated Polymers Based on Diketopyrrolopyrrole and 2,2'-(thieno[3,2-b]thiophene-2,5-diyl)diacetonitrile Via Knoevenagel Condensation.

Conjugated polymers have attracted extensive attention as semiconducting materials in wearable and flexible electronics. In this study, we utilize atom-economical Knoevenagel reaction to construct two conjugated polymers, PTDPP-CNTT and PFDPP-CNTT, based on dialdehyde-thiophene/furan-flanked diketopyrrolopyrrole (DPP) and 2,2'-(thieno[3,2-b]thiophene-2,5-diyl)diacetonitrile (CNTT). The resulting polymers exhibited suitable highest occupied molecular orbital/lowest unoccupied molecular orbital (HOMO/LUMO) energy levels, small bandgaps, and broad UV-vis-NIR absorptions (≈400-1000nm), endowing them with photothermal and balanced ambipolar semiconducting properties with hole and electron mobilities over 10-3 cm2V-1s-1. Additionally, PTDPP-CNTT-based organic field-effect transistors (OFETs)devices show photo-responsive characteristics at 808 and 980nm in the hole transport channel with the photo-responsivenesses of 9.0 × 10-3 A/W and 0.4 A/W, respectively, suggesting potential application in organic NIR-phototransistors.

A Low-Symmetry Copper Benzenehexathiol Coordination Polymer with In-Plane Electrical Anisotropy.

Electrically conductive coordination polymers (ECCPs), particularly those incorporating benzenehexathiol (BHT) ligands, are emerging as a distinctive class of electronic materials with tunable semiconducting and metallic properties. However, the exploration of novel ECCPs with low-symmetry structures and electrical anisotropy remains under development. Here, we report the on-water surface synthesis of a novel ECCP, namely Cu5BHT, which exhibits a low-symmetry structure and unique in-plane electrical anisotropy that differs from the well-known Cu3BHT phase. Utilizing imaging and diffraction techniques, we elucidate the unit cell and crystal structure of Cu5BHT, revealing an asymmetric arrangement of the kagome resembling lattice connected by two different secondary building units: square planar CuS4 and non-planar Cu2S4. Theoretical studies indicate that Cu5BHT is metallic and exhibits in-plane electrical anisotropy due to the structure arranged in interconnected well-conducting CuS4 chains and less-conducting Cu2S4 slabs oriented along single crystal direction. Single-crystal electrical measurements confirm a metallic character characterized by the increase of conductance upon cooling. Notably, the measured conductance along different crystal directions within the ab plane unambiguously reveals a significant anisotropy, with an anisotropic factor reaching ~8. This work demonstrates a novel low-symmetry ECCP and highlights its potential for achieving in-plane electrical anisotropy.

A Low‐Symmetry Copper Benzenehexathiol Coordination Polymer with In‐Plane Electrical Anisotropy

Electrically conductive coordination polymers (ECCPs), particularly those incorporating benzenehexathiol (BHT) ligands, are emerging as a distinctive class of electronic materials with tunable semiconducting and metallic properties. However, the exploration of novel ECCPs with low‐symmetry structures and electrical anisotropy remains under development. Here, we report the on‐water surface synthesis of a novel ECCP, namely Cu5BHT, which exhibits a low‐symmetry structure and unique in‐plane electrical anisotropy that differs from the well‐known Cu3BHT phase. Utilizing imaging and diffraction techniques, we elucidate the unit cell and crystal structure of Cu5BHT, revealing an asymmetric arrangement of the kagome resembling lattice connected by two different secondary building units: square planar CuS4 and non‐planar Cu2S4. Theoretical studies indicate that Cu5BHT is metallic and exhibits in‐plane electrical anisotropy due to the structure arranged in interconnected well‐conducting CuS4 chains and less‐conducting Cu2S4 slabs oriented along single crystal direction. Single‐crystal electrical measurements confirm a metallic character characterized by the increase of conductance upon cooling. Notably, the measured conductance along different crystal directions within the ab plane unambiguously reveals a significant anisotropy, with an anisotropic factor reaching ~8. This work demonstrates a novel low‐symmetry ECCP and highlights its potential for achieving in‐plane electrical anisotropy.

Capacitorless Dynamic Random Access Memory with 2D Transistors by One-Step Transfer of van der Waals Dielectrics and Electrodes.

Dynamic random access memory (DRAM) has been a cornerstone of modern computing, but it faces challenges as technology scales down, particularly due to the mismatch between reduced storage capacitance and increasing OFF current. The capacitorless 2T0C DRAM architecture is recognized for its potential to offer superior area efficiency and reduced refresh rate requirements by eliminating the traditional capacitor. The exploration of two-dimensional (2D) materials further enhances scaling possibilities, though the absence of dangling bonds complicates the deposition of high-quality dielectrics. Here, we present a hexagonal boron nitride (h-BN)-assisted process for one-step transfer of van der Waals dielectrics and electrodes in 2D transistors with clean interfaces. The transferred aluminum oxide (Al2O3), formed by oxidizing aluminum (Al), exhibits exceptional flatness and uniformity, preserving the intrinsic properties of the 2D semiconductors without introducing doping effects. The MoS2 transistor exhibits an extremely low interface trap density of about 3 × 1011 cm-2 eV-1 and a leakage current density down to 10-7 A cm-2, which enables effective charge storage at the gate stack. This method allows for the simultaneous fabrication of two damage-free MoS2 transistors to form a capacitorless 2T0C DRAM cell, enhancing compatibility with 2D materials. The ultralow leakage current optimizes data retention and power efficiency. The fabricated 2T0C DRAM exhibits a rapid write speed of 20 ns, long data retention exceeding 1,000 s, and low energy consumption of approximately 0.2 fJ per write operation. Additionally, it demonstrates 3-bit storage capability and exceptional stability across numerous write/erase cycles.

Tunable in-plane conductance anisotropy in 2D semiconductive AgCrP2S6 by ion-electron co-modulations.

In-plane anisotropic two-dimensional (2D) semiconductors have gained much interest due to their anisotropic properties, which opens avenues in designing functional electronics. Currently reported in-plane anisotropic semiconductors mainly rely on crystal lattice anisotropy. Herein, AgCrP2S6 (ACPS) is introduced as a promising member to the anisotropic 2D semiconductors, in which, both crystal structure and ion-electron co-modulations are used to achieve tunable in-plane conductance anisotropy. Scanning tunneling electron microscopy and polarized Raman spectroscopy show the structural anisotropy of ACPS. Electrical transport measurements show that its tunable in-plane conductance anisotropy is related to the ion-electron co-modulations, where Ag ion migration is anisotropic along a axis and b axis. Electrical transport measurements show the semiconducting properties of ACPS, as also supported by photoluminescence results. Moreover, the transfer curves of ACPS showcase large Vg-related hysteresis, which is directionally controlled by anisotropic Ag ion migration. This work offers a possibility of using anisotropic charge transport in functional electronics by ion-electron co-modulations.

Swift heavy ion induced electronic structure modifications in ZnO thin films: X-ray absorption spectroscopy study

Abstract The ZnO is a potential material for electronic devices application due to its versatile semiconducting properties with a direct band gap of 3.3 eV.
This research represents a modification in the electronic structure of ZnO thin films (350 nm) irradiated with swift heavy ions (SHI) at different fluence. ZnO thin films were grown on silicon substrate (100) using radio-frequency (RF) magnetron sputtering which are highly oriented in single phase/plane (002). These deposited thin films were subjected to SHI of 100 MeV O-ion with fluence of 3$\times$10$^{12}$ ions/cm$^2$, 45 MeV Li-ion beams with fluence of 3$\times$10$^{12}$ ions/cm$^2$, and 120 MeV Au-ion with varying fluence from 1$\times$10$^{11}$ to 5$\times$10$^{12}$ ions/cm$^2$. {SRIM/TRIM software was utilized to studied theoretical effect of SHI like ion ranges, phonon energy, etc.} Modifications in the structure and the electrical properties of ZnO thin films were investigated using the high-resolution X-ray diffraction (HRXRD), {Atomic Force Microscopy (AFM)} and Near Edge X-ray Absorption Fine Structure (NEXAFS) spectroscopy at the O K- and Zn L$_{3,2}$-edges. HRXRD revealed the structure, crystallinity and phase of the system whereas NEXAFS revealed the local atom bonding symmetry via the molecular orbital hybridization between Zn and O. Further, Density functional theory (DFT) based first principle FEFF9.6 software has been discussed for the understanding of the various parameter and cards for the good fitting of NEXAFS. Simulations were utilized to support the NEXAFS experimental data for the determination of various physical entity and their interpretations for diverse applications. NEXAFS measurements provide the deeper understanding of the effects of SHI for the promising applications through controlled fluence rate of ion beam irradiations.