AbstractWe have investigated the annealing‐temperature dependence on photoluminescence (PL) properties of InAs quantum dots (QDs) fabricated on GaAs substrate. The annealing temperatures were varied from 700 to 1000 °C. The observed PL spectra were drastically changed by changing the annealing temperature. The PL peaking‐wavelength of non‐annealed sample is around 1200 nm. However, the peaking‐wavelength is drastically blue‐shifted with increasing annealing temperature. The strongest PL intensity is observed from the sample annealed at 875 °C. This PL intensity is more than seven fold compared with that of the non‐annealed sample. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)