Properties Of Bismuth Titanate Research Articles

Synthesis and Characterization of Electrical Properties of Bismuth Titanate

Bismuth titanate solid solutions, Bi12+xTiO10+δ (0 ≤ x ≤ 0.6), were synthesized by conventional solid state method at sintering temperature of 700°C for 48 h. Structural studies were performed by powder X-ray diffraction (XRD) analysis and revealed that single-phase materials were obtained with a general formula of Bi12+xTiO10+δ (0 ≤ x ≤ 0.6). The electrical properties of all the single-phase samples were studied using the impedance spectroscopy technique. Further characterization of the materials was carried out using differential thermal analysis (DTA) and indicated that no phase transition was observed. The TGA analysis was observed and found that all the materials were thermally stable.

Control of the structure, morphology and dielectric properties of bismuth titanate ceramics by praseodymium substitution using an intermediate fuel agent-assisted self-combustion synthesis

The volatilization of bismuth (Bi) species and bismuth oxide (Bi2O3) leads to the presence of the oxygen vacancies (VO00) and consequently restrains the properties of bismuth titanate (BIT; Bi4Ti3O12). This report presents the incorporation of different atomic ratios of praseodymium ion (Pr3+: x = 0, 0.2, 0.4, 0.6, 0.8 and 1.0) into the BIT (Bi4−xPrxTi3O12) ceramics through an intermediate fuel agent-assisted self-combustion synthesis (IFSC). X-ray diffraction and Raman spectroscopy results revealed that some of bismuth ion (Bi3+) in the pseudo-perovskite layer containing Ti–O octahedra was substituted by Pr3+ ion. The substitution by ion with a smaller ionic radius caused the structure distortion and consequently resulted in the phase transformation from an orthorhombic symmetry to a tetragonal symmetry. Besides, it suppressed the volatilization of Bi and Bi2O3 and increased the stability of metal–oxygen octahedra in the BIT. These play a crucial role to control the crystal growth, as well as limit the VO00. Dense ceramic with a relative density up to 96.2% was obtained by incorporating Pr3+ with atomic ratio of 1.0. It exhibited high dielectric constant as 908.19 and low dissipation factor as 0.0011. The results address the possibility to control the structure, morphology and dielectric properties of BIT ceramic by incorporating Pr3+ ion through IFSC.

Synthesis, Structure, Thermal and Electrical Behavior of La-Doped Bismuth Titanate Ceramics

In this paper, we report the properties of bismuth titanate (Bi4Ti3O12, BIT) based nano powders with variation of La content synthesized by well known conventional solid state reaction method. These BIT based ceramic samples sintered above 1000°C had density in the range of 95 to 98% of the theoretical density. The effect of La-doping on structural, thermal and electrical properties of BIT has been studied. The results of XRD, TGA-DSC showed the presence of La-content which shifts the peaks to higher level. The change of dielectric constant, dc conductivity of BIT ceramics were observed as increase in the La concentration from x = 0 to 0.45.

Tuning the Structural and Optical Properties of Bismuth Titanate by Different Nd Substitution Content

We report the structural and optical properties variation of Bi4-xNdxTi3O12 by different Nd substitution content for the first time. Bi4-xNdxTi3O12 thin films were fabricated by sol-gel process. X-ray diffraction and Raman scattering analysis reveal degradation in crystallinity and increase in distortion upon Nd doping. Grain size is suppressed as the increase of Nd content. Optical transmittance decreases from 63% to 43% at the wavelength of 600 nm as the Nd content increases from 0 to 0.85. Band gap energy increases from 3.4 to 3.5 eV when Nd content increases. Refractive index and extinction coefficient variations are also investigated.

Fatigue properties of bismuth titanate annealed in the reduced atmosphere

Bi4Ti3O12 (BIT) ceramic is one of a typical bismuth layer-structured ferroelectrics (BLSF) and shows strong anisotropic properties with relatively large remanent polarization. However, it is unknown the mechanism of the fatigue behavior for BIT ceramic. The most obvious candidate for the fatigue behavior is oxygen vacancies. In this study, the fatigue characteristics of BIT ceramic were investigated for various annealing conditions in the reduction atmosphere. The BIT ceramic shows the fatigue or fatigue-free behavior by means of changing the reduced condition regardless the layer number m of the bismuth layer-structure.