The Single Event Upset (SEU) characterization on the partially depleted (PD) Silicon-On-Insulator (SOI) SRAMs manufactured by 0.5/0.35 μm CMOS technology has been studied by using the experimental accelerator’s testing and Monte Carlo simulation. The results show that, in spite of the good consistent between the simulated data and experimental testing, one notable phenomenon is that, linear energy transfer (LET) as the input has no manifest influence on the saturation of SEU cross-section. This non-negligible trend led us to use the term ion velocity instead of LET. The characteristics of ion velocity have certainly been proved by the experiment, while the unsimilar results are found for the simulation with no any difference from the SEU cross-section. Consequently, a more straightforward calculation in the deposited energy within sensitive volume (SV) has performed by inspecting directly into the underlying mechanism of the undetected energy loss. The loss of deposited energy has been obtained in the assumption that the heavy ions strike on the hypothetical device at oblique incidence. The unexpected energy loss resulted from incident ions at oblique incidence as edge effect indicates the importance of quantifying the efficiency of energy collection with respect to the dimensions of SV, including the variance of surface area and thickness. It is illustrated that the deposited energy induced by heavy ions on the condition of changeable surface area has more sensitivity on the incident angle and ionic characterization compared with those for the SV of variable thicknesses. Moreover, it is obtained that the fractional changes of deposited energy within the SVs of different thicknesses present a saturating trend, which can be accelerated by the increment of incident angle, and this evidence would be helpful for deeply comprehending why the implicit inaccuracy of the SEU saturated cross-section happened under the metrics of LET or ion velocity. Ultimately, the dependence of deposited energy on the surface area and thickness is further explored and discussed based on the geometrical property and radial track profile.
Read full abstract