A new technique has been developed to measure etch rate uniformity in situ using a charge coupled device (CCD) camera which views the wafer during plasma processing. The technique records the temporal modulation of plasma emission or laser illumination reflected from the wafer; this modulation is caused by interferometry as thin films are etched or deposited. The measured etching rates compared very well with those determined by helium‐neon laser interferometry. This technique is capable of measuring etch rates across 100 mm or larger wafers. It can resolve etch rate variations across a wafer or within a die. The CCD measurement technique is a valuable tool for process development and has potential use as a real‐time diagnostic for process control.