We report cross sections for fluorescence quenching and branching ratios for chemical reaction in collisional deactivation of Ga(5s1 2S1/2) by added gases at room temperature following resonance 4p1 2P○1/2 →5s1 2S1/2 excitation at 403.30 nm with a pulsed laser. Total quenching cross sections are obtained from Stern–Volmer analysis of fluorescence lifetimes. Chemical contributions to fluorescence quenching are investigated by a pump and probe technique involving saturation of the resonance transition by a pump laser pulse to produce a known fraction of gallium atoms in the excited state, and measurement of the depletion of the gallium atom concentration due to chemical reaction in the excited state. Relative concentration measurements in the presence and absence of the saturating pump pulse are by resonance fluorescence excitation by a probe laser pulse suitably delayed relative to the pump pulse. An analysis of the experiment in terms of rate equations shows how branching ratios for chemical reaction may be obtained from the depletion measurements. Fluorescence quenching cross sections (Å2) are large for N2O (99±10), CO2 (100±20), CH4 (55±6), C2H6 (77±20), C3H8 (100±20), n-C4H10 (130±20), and C2H4 (75±20), moderately large for CO (11±4) and N2 (8±2), and very small for CF4 (<0.3) and H2 (<0.05). Among the efficient quenchers only C2H4 showed no detectable contribution from chemical quenching. Branching ratios for chemical removal of Ga(5 2S1/2) are N2O (0.96+0.04−0.1), CO2 (0.55±0.1), CH4 (0.27±0.07), C2H6 (0.33±0.1), C3H8 (0.26±0.1), and C2H4 (0.0+0.05−0.0). Results for H2 and the alkane hydrocarbons are discussed with reference to simple concepts of orbital interactions in the entrance channel.
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