Price Of Indium Research Articles

Fabrication of fluorine-doped tin oxide by using Indonesian local stannic chloride precursors with spin coating method

Fluorine-doped tin oxide is a thin layer of transparent conductive oxide, which has a function as a semiconductor. Fabrication of fluorine tin oxide from this research was expected to replace indium-doped tin oxide. Indium-doped tin oxide function as a commercial transparent conductive oxide. The raw material of indium was limited, so the price of indium is higher than fluorine. The material used are Indonesia local tin (IV) Chloride, ammonium fluoride, and methanol. Conductive liquids has made by the sol - gel method. Sol gel liquids doped with ammonium fluoride to make a high conductivity. The transmittance value at the 1, 2, 3, 4, and 5 minutes deposition time were respectively 69.7; 43.6; 14.4; 14.1 and 34.7%. In this research, spin coating method under 3000 RPM on fix substrate temperature of 300°C. The results of the experiment shows, increased deposition time, make the thickness of the layer increased while resistivity and transmittance decreased. The optimum parameter for glass conductivity fabrication were obtained at 4 minutes time deposition, substrate temperature at 300°C has a resistivity of 125 k Ω, transmittance 14.1% and band gap energy 2.48 eV.

Dependences of Sputtering Times on the Structural and Electrical Properties of ZnO/Ag/ZnO Thin Films on PET by DC Sputtering

Transparent conductive oxide thin films are utilized as transparent electrode materials used in various displays due to its high conductivity and penetration ratio in a visible ray of spectrum. Indium zinc oxide (ITO) is one of the most widely used transparent conductive oxide films. However, recently replaceable resources have become imperative due to the increased price of indium used as the raw material. Zinc oxide (ZnO) has drawn attention as an alternative material for ITO due to its low cost, abundance, and eco-friendly characteristics. Much of the research work has been conducted because of its advantages. Meanwhile, due to the appearance of flexible thin film, researchers' attention to investigate the thin films on polyethylene terephthalate (PET) is continuously increasing. We studied the structural and electrical properties of ZnO/Ag/ZnO films which were deposited onto PET substrate at room temperature with the inclined opposite target type dc magnetron sputtering equipment. The ZnO/Ag/ZnO multilayer films having high transmittance of 78.3% and low sheet resistance of 1.974 Ω/sq are successfully fabricated and can be reproduced by controlling the preparation process parameters properly.

インジウムの循環解析と資源性の考察

The analyses on the resource and recycling problems of indium elements have been conducted. The electronic industry uses 80% of the total indium production in the world as ITO (indium tin oxide) for flat display panels. The refinery and application processes, material flow, present status of the resources, and recycling have been analyzed based on the data in 2003. The production shift and other items from 2003 to 2025 were estimated through 3 scenarios. The resources will be exhausted by 2010 if the current resource estimation is correct and production rate continues. The exhaustion will occur around 2025 or before even if recycling and technology advance, by which the amount of In used in flat panel displays can be reduced are developed. The toxicity of indium is uncertain as of now , but the mass flow in Japan is not very high, so the effect on pollution in Japanese society is expected to be very low. The price of indium is plotted on the line of the prices as a function of the separative work units of Fe, Cu, Zn, Ag, Au. This means that the price is reasonable although there is little resource and the usage is limited in flat display panels. The production, price and exhaustion will be strongly affected by zinc refinery, alternative technologies in the electronic industry and recycling technologies and systems.