Ar+ ion bombardment (900 eV) of organosilicate glass (OSG) in the presence of NH3 (1 × 10−6 Torr) yields an overlayer containing Si-NHx bonds. The NHx layer decreases the rate of carbon loss from the remaining film upon subsequent oxygen plasma exposure, due to preferential removal of N from the surface region. Ab initio density functional theory calculations have been performed to investigate the stability of the bonds present in low-k dielectrics utilizing a trimethyltrisiloxane model system. Calculated bond energies are 6.30 eV (Si-NH2), 6.27 eV (Si-OH), 5.69 eV (Si-CH3), and 5.54 eV (Si-H). The slightly higher calculated Si-NH2 bond energy is consistent with experiment and indicates that the nitrided OSG surface layer inhibits carbon loss in part by inhibition of O2 diffusion into the bulk.
Read full abstract