Presence Of Defects In Material Research Articles

Computing spectral properties of topological insulators without artificial truncation or supercell approximation

AbstractTopological insulators (TIs) are renowned for their remarkable electronic properties: quantized bulk Hall and edge conductivities, and robust edge wave-packet propagation, even in the presence of material defects and disorder. Computations of these physical properties generally rely on artificial periodicity (the supercell approximation, which struggles in the presence of edges), or unphysical boundary conditions (artificial truncation). In this work, we build on recently developed methods for computing spectral properties of infinite-dimensional operators. We apply these techniques to develop efficient and accurate computational tools for computing the physical properties of TIs. These tools completely avoid such artificial restrictions and allow one to probe the spectral properties of the infinite-dimensional operator directly, even in the presence of material defects, edges and disorder. Our methods permit computation of spectra, approximate eigenstates, spectral measures, spectral projections, transport properties and conductances. Numerical examples are given for the Haldane model, and the techniques can be extended similarly to other TIs in two and three dimensions.

Correlation between quasistatic und fatigue properties of additively manufactured AlSi10Mg using Laser Powder Bed Fusion

In order to find a resource efficient approach for the fatigue lifetime prediction of laser powder bed fusion (L-PBF) processed AlSi10Mg material, results of tensile and fatigue tests were compared. The specimens were manufactured with three different L-PBF machines and studied in different heat treatment conditions (as-built, annealed, T6 heat treated). The investigations showed that the high attainable tensile strength properties after the manufacturing process are not beneficial in the high cycle fatigue (HCF) regime. In contrast, the applied heat treatments, which lead typically to a decrease of ultimate tensile strength, improved dramatically the fatigue behavior. Additionally, a clear correlation between the elongation at fracture and HCF resistance has been found for individual heat treatment conditions. This empiric relationship provides an estimation of the fatigue resistance in the presence of material defects and can be implemented in part and process approvals.

Bearing Health Monitoring Based on the Orthogonal Empirical Mode Decomposition

Bearing is a crucial component of industrial equipment, since any fault occurring in this system usually affects the functionality of the whole machine. To manage this problem, some currently available technologies enable the remote prognosis and diagnosis of bearings, before that faults compromise the system function and safety, respectively. A system for the in-service monitoring of bearing, to detect any inner fault or damage of components and material, allows preventing undesired machine stops. Moreover, it even helps in performing an out-monitoring action, aimed at revealing any anomalous behaviour of the system hosting bearings, through their dynamic response. The in-monitoring can be based on the vibration signal measurement and exploited to detect the presence of defects in material. In this paper, the orthogonal empirical mode decomposition is analysed and tested to investigate how it could be effectively exploited in a lean in-service monitoring operation and remote diagnosis. The proposed approach is validated on a test rig, where an elementary power transmission line was set up. The activity highlights some main properties and practical issues of the technological implementation, as well as the precision of the Orthogonal Empirical Mode Decomposition, as a compact approach for an effective detection of bearing faults in operation.

Structural, electrical, and optical properties of CdMnTe crystals grown by modified floating-zone technique

Cadmium manganese telluride (CdMnTe or CMT), a compound semiconductor, is considered a promising material for the fabrication of high-performance room-temperature x-ray and gamma-ray detectors. The presence of material defects, e.g., high density of Te inclusions, has been a long-standing issue in CMT crystals grown by various Bridgman methods, since these defects degrade the device performance via charge-trapping. To address this issue, we employed the modified floating-zone method (MFZ) to grow CMT crystals and obtained as-grown crystals free of Te inclusions. This represents a new and distinct feature, absence of Te inclusions, compared to CMT crystals grown by Bridgman methods. White-beam x-ray diffraction topography (WBXDT) measurements demonstrated the existence of a high stress field within the MFZ-grown CMT crystals, which originates from the steep temperature gradient near the growth interface. Furthermore, we achieved a resistivity of 109 Ωcm for the MFZ-grown CMT crystals. The low-temperature photoluminescence (PL) measurements show that the intensity of the dislocation-related Y band is much higher than that of the principal exciton peaks, (D0,X) and (A0,X), confirming that the crystalline quality is affected by the high stress field. A long-term in-situ or post-growth thermal annealing will help to release such stress to improve the crystalline quality. Open image in new window

Effect of silicon content and defects on the lifetime of ductile cast iron

In this work, the influence of microstructure on the mechanical properties has been studied for different grades of ferritic ductile cast iron. Mechanical tests were carried out and the effect of silicon on the resistance of material was well noticed. An increasing silicon content increases the strength and decreases the ductility of material. The lifetime and endurance limit of material were affected by the presence of defects in material and microstructure heterogeneity. Metallurgical characterizations showed that the silicon was highly segregated around graphite nodules which leads to the initiation of cracks. The presence of defects causes the stress concentration and leads to the initiation and propagation of cracks.

Evolution of nanoscale defects to planar cracks in a brittle solid

Fracture of a solid is a highly multiscale process that associates atomic scale bond breaking with macroscopic crack propagation, and the process can be dramatically influenced by the presence of defects in materials. In a nanomaterial, defect formation energy decreases with the reduction of material size, and therefore, the role of defects in crack formation and subsequent crack growth in such materials may not be understood from the classical laws of fracture mechanism. In this study, we investigated the crack formation process of a defective (with missing atoms) nanostructured material (NaCl) using a series of molecular dynamics (MD) simulations. It was demonstrated that simple defects in the form of several missing atoms in the material could develop into a planar crack. Subsequently, MD simulations on failures of nanosized NaCl with pre-defined planar atomistic cracks of two different lengths under prescribed tensile displacement loads were performed. These failure loads were then applied on the equivalent continuum models, separately, to evaluate the associated fracture toughness values using the finite element analysis. For small cracks, the fracture toughness thus obtained is cracksize dependent and the corresponding critical energy release rate is significantly smaller than Griffith’s theoretical value. Explanation for this discrepancy between LEFM and the atomistic model was attempted.

An accurate, repeatable, and well characterized measurement of laser damage density of optical materials

Known for more than 40 years, laser damage phenomena have not been measured reproducibly up to now. Laser resistance of optical components is decreased by the presence of material defects, the distribution of which can initiate a distribution of damage sites. A raster scan test procedure has been used for several years in order to determine laser damage density of large aperture UV fused silica optics. This procedure was improved in terms of accuracy and repeatability. We describe the equipment, test procedure, and data analysis to perform this damage test of large aperture optics with small beams. The originality of the refined procedure is that a shot to shot correlation is performed between the damage occurrence and the corresponding fluence by recording beam parameters of hundreds of thousands of shots during the test at 10 Hz. We characterize the distribution of damaging defects by the fluence at which they cause damage. Because tests are realized with small Gaussian beams (about 1 mm at 1e), beam overlap and beam shape are two key parameters which have to be taken into account in order to determine damage density. After complete data analysis and treatment, we reached a repeatable metrology of laser damage performance. The measurement is destructive for the sample. However, the consideration of error bars on defect distributions in a series of parts allows us to compare data with other installations. This will permit to look for reproducibility, a necessary condition in order to test theoretical predictions.

Effects of imperfections on fatigue initiation in railway wheels

The paper begins with a description of three observed types of fatigue failure. It continues with a discussion on fatigue mechanisms and numerical modelling of rolling contact fatigue, especially in the presence of material defects. Based on this discussion, the main mechanisms behind the three types of failure are analysed from a mechanical point of view. Finally, practical implications of the results in this paper are discussed and some suggestions of means of preventing fatigue failure of railway wheels are put forward. Future research areas are indicated.

Analytical and simulation studies of failure modes in SRAMs using high electron mobility transistors

Gallium arsenide memories, which are now beginning to be used commercially, are subject to certain unusual parametric faults, not normally seen in silicon or other memory devices. This paper studies the behavior of gallium arsenide high electron mobility transistor (HEMT) memories in the presence of material defects, processing errors and design errors to formulate efficient testing schemes. All defects and errors are mapped into equivalent circuit modifications and the resulting circuits are analyzed and simulated to observe the fault effects. Certain complex pattern-sensitive faults described in the testing literature are not observed at all, while certain other faults which have not been previously studied, are observed. It is shown that by slightly modifying and reordering existing test procedures, all faults in these RAMs can be tested. >