Presence Of Charged Impurities Research Articles

Density of states in a two-dimensional electron gas: Impurity bands and band tails

We calculate the density of states of a two-dimensional electron gas in the presence of charged impurities within Klauder's best multiple-scattering approach. The silicon metal-oxide-semiconductor (MOS) system with impurities at the interface is studied in detail. The finite extension of the electron wave function into the bulk is included as well as various dependences of the density of states on the electron, the depletion, and the impurity densities. The transition from an impurity band at low impurity concentration to a band tail at high impurity concentration is found to take place at a certain impurity concentration. If the screening parameter of the electron gas is decreased, the impurity band shifts to lower energy. For low impurity density we find excited impurity bands. Our theory at least qualitatively explains conductivity and infrared-absorption experiments on impurity bands in sodium-doped MOS systems and deep band tails in the gap observed for high doping levels in these systems.

De Haas-van Alphen effect studies in dilute alloys of silver and gold

De Haas-van Alphen experiments have been used to determine the scattering temperatures which characterize the [111] neck and belly extremal orbits in some dilute alloys of silver and gold. The relaxation time is anisotropic withτ N/τ B≃2 in both Ag(Au) and Au(Ag) when the scattering is dominated by the solute. This anisotropy is in the opposite sense to that observed in another homovalent alloy Ag(Cu) and to that observed in the presence of charged impurities.