Preparation Of Single Crystals Research Articles

The Microstructure characteristic and Its influence on the stray grains of Nickel-based single crystal superalloys prepared by Laser directed energy deposition

The microstructure adjustment and the stray grains inhibition are important for the preparation of Nickel-based single crystal (SX) superalloys by laser directed energy deposition (L-DED). In this work, the single channel monolayer and single channel five-layers DD6 SX superalloys have been prepared by L-DED. The macroscopic simulations in the deposition processing and multiscale characterizations of deposition structure were used to analyze the formation and evolution mechanisms of unique precipitations and stray grains. Results shows that the larger laser power and higher powder feed rate have a positive impact on the epitaxial growth of columnar dendrite and the elimination of stray grains. The residual stress caused by the complex thermal cycles is not the direct reason that induce the formation of SGs, but the rapid movement of dislocations result in the formation of sub-grain boundary. According to the columnar transition to equiaxed theory (CET), temperature field simulation and analysis of element segregation behaviors, the element segregation results in the unique microstructure, include petal-shaped γ/γ′ eutectic and demarcation band with a thickness of a single γ/γ′ eutectic. Besides, the geometric size of γ/γ′ eutectic decrease with respect to the deposition height. With the change of height at deposition region, dendritic orientation deviations affect the uniformity of element segregation, resulting in variations in γ′ phase and γ/γ′ eutectic dimensions between dendritic core and the inter-dendrite zone at the microscopic level and manifesting as grain boundaries at the mesoscale. At the same time, the formation mechanisms of carbide and adjacent γ/γ′ eutectic leads to the misorientations between the dendrite core and the inter-dendrite zone, which also appears as stray grains at the mesoscopic scale.

Preparation of single crystals of palmatine-sulfophenyl acids pharmaceutical salts by substituting Cl− in palmatine chloride to improve hygroscopic stability and antibacterial activity of palmatine and to preserve its solubility

To enhance the hygroscopic stability of palmatine chloride (PMTCl) while maintaining its solubility, several unexplored pharmaceutical salts of palmatine (PMT) were synthesised using benzenesulfonic acid (PMT-BSA), p-toluenesulfonic acid (PMT-PTSA), and aminobenzenesulfonic acid (PMT-SUL). These novel salts were thoroughly characterized using techniques such as single-crystal X-ray diffraction, powder X-ray diffraction (PXRD), infrared spectroscopy (IR), and Hirshfeld surface analysis to determine their structural properties. Surprisingly, it was discovered that these salts exhibited improved antibacterial activity in addition to their enhanced hygroscopic stability. As anticipated, all three pharmaceutical salts demonstrated improved hygroscopic stability. This improvement might be attributed, to some extent, to the introduction of safe, stable, and less electronegative anions (BSA, PTSA, and SUL) to replace the more electronegative chloride (Cl−) in PMTCl. The replacement of Cl− hindered the binding of the pharmaceutical with external water molecules, thus increasing its resistance to moisture. Moreover, the interaction between PMT and the anions from the benzenesulfonic acid group via hydrogen bonding might have played a role in the improved hygroscopic stability. The crystal structure formed by the PMT molecules exhibited long-range order, while the benzenesulfonic acid anions cleverly avoided potential binding sites for water molecules. Additionally, the antibacterial activities of all three pharmaceutical salts were enhanced. This improvement can be attributed to the alteration of electron cloud density (ρe) in the isoquinoline group of PMT upon the introduction of benzenesulfonate anions to form the pharmaceutical salts. This hypothesis was supported by analyzing the molecular electrostatic potential, electron cloud density, and Hirshfeld surface. The successful outcome of this study suggests that modifying the ρe of the isoquinoline group in protoberberines through the introduction of benzenesulfonic acid anions to form pharmaceutical salts can potentially alter their physicochemical properties and biological activities. This finding paves the way for future research on improving the physicochemical properties of protoberberines-based pharmaceuticals.

Preparation, crystal structure and physicochemical characterization of a semi-organic l-glutamic acid lithium chloride single crystal for nonlinear optical applications

Preparation, crystal structure and physicochemical characterization of a semi-organic l-glutamic acid lithium chloride single crystal for nonlinear optical applications

Research on Classification Algorithm of Silicon Single-Crystal Growth Temperature Gradient Trend Based on Multi-Level Feature Fusion.

In the process of silicon single-crystal preparation, the timely identification and adjustment of abnormal conditions are crucial. Failure to promptly detect and resolve issues may result in a substandard silicon crystal product quality or even crystal pulling failure. Therefore, the early identification of abnormal furnace conditions is essential for ensuring the preparation of perfect silicon single crystals. Additionally, since the thermal field is the fundamental driving force for stable crystal growth and the primary assurance of crystal quality, this paper proposes a silicon single-crystal growth temperature gradient trend classification algorithm based on multi-level feature fusion. The aim is to accurately identify temperature gradient changes during silicon crystal growth, in order to promptly react to early growth failures and ensure the stable growth of high-quality silicon single crystals to meet industrial production requirements. The algorithm first divides the temperature gradient trend into reasonable categories based on expert knowledge and qualitative analysis methods. Then, it fuses the original features of actual production data, shallow features extracted based on statistical information, and deep features extracted through deep learning. During the fusion process, the algorithm considers the impact of different features on the target variable and calculates mutual information based on the difference between information entropy and conditional entropy, ultimately using mutual information for feature weighting. Subsequently, the fused multi-level feature vectors and their corresponding trend labels are input into a Deep Belief Network (DBN) model to capture process dynamics and classify trend changes. Finally, the experimental results demonstrate that the proposed algorithm can effectively predict the changing trend of thermal field temperature gradients. The introduction of this algorithm will help improve the accuracy of fault trend prediction in silicon single-crystal preparation, thereby minimizing product quality issues and production interruptions caused by abnormal conditions.

Optimization of grain-selection behavior in the spiral selector during Cusp-magnetic-field-assisted directional solidification of single-crystal superalloy

Cusp magnetic field (CMF) could overcome the damage of the longitudinal or transverse magnetic fields on the directional growth of dendrites in single crystal (SC) superalloy, which shows the promising prospects in the industrial application. The SC preparation is obtained by the spiral selector in industry. Thus, the work investigates the effect of CMF on the grain selection of SC superalloy with starter-block heights and temperature gradients in the spiral selector for the first time. The results show that the favorable effect of CMF on SC selection in the spiral selector is all related with the starter-block heights at the temperature gradients. At the high starter-block height, the CMF decreases the height of the selected SC in the spiral section and optimizes the selected orientation. The less grains in the entrance make the favorable effect of CMF on SC selection be realized in the spiral section. The CMF effect on SC selection in the spiral selector origins from the change of the flow field structure near the liquid-solid interface. It not only enhances the effect of grain competition and selection in the high starter block but also makes the liquid-solid interface less tilt for favorably competition growth of dendrites in the spiral channel. The investigation provides a new means and a theory instruction for optimizing the SC selection in the spiral selector.

9-Ethyl-6,6-dimethyl-8-[4-(morpholin-4-yl)piperidin-1-yl]-11-oxo-6,11-dihydro-5H-benzo[b]carbazole-3-carbonitrile Hydrochloride

Alectinib hydrochloride is an anticancer medication used for the first-line treatment of non-small cell lung cancer. Although it was approved for medical use ten years ago, and three polymorphs of this substance were proposed based on X-ray diffraction patterns, their crystal structures remained unknown to date. The main problem was the preparation of high quality single crystals due to the very low solubility of the salt. Herein, we report on the molecular and crystal structure of form I of alectinib hydrochloride as obtained using powder X-ray diffraction data from a laboratory source. Short Cl…N distances between the anion and the nitrogen atoms of the morpholine and benzo[b]carbazole rings indicate the positions of the H(N) atoms. As a result, the cation and anion form infinite Cl…H(N)-bonded chains.

Large-area single-crystal TMD growth modulated by sapphire substrates.

Transition metal dichalcogenides (TMDs) have recently attracted extensive attention due to their unique physical and chemical properties; however, the preparation of large-area TMD single crystals is still a great challenge. Chemical vapor deposition (CVD) is an effective method to synthesize large-area and high-quality TMD films, in which sapphires as suitable substrates play a crucial role in anchoring the source material, promoting nucleation and modulating epitaxial growth. In this review, we provide an insightful overview of different epitaxial mechanisms and growth behaviors associated with the atomic structure of sapphire surfaces and the growth parameters. First, we summarize three epitaxial growth mechanisms of TMDs on sapphire substrates, namely, van der Waals epitaxy, step-guided epitaxy, and dual-coupling-guided epitaxy. Second, we introduce the effects of polishing, cutting, and annealing processing of the sapphire surface on the TMD growth. Finally, we discuss the influence of other growth parameters, such as temperature, pressure, carrier gas, and substrate position, on the growth kinetics of TMDs. This review might provide deep insights into the controllable growth of large-area single-crystal TMDs on sapphires, which will propel their practical applications in high-performance nanoelectronics and optoelectronics.

Single crystals and optical ceramics based on solid solutions of AgCl – AgBr – AgI system

The development of infrared (IR) and terahertz (THz) optical materials is work, that is connected with prospective applications in wide-spectral systems, medicine, IR and THz techniques. This work is focused on the development of new optical materials based on silver halides in the AgCl – AgBr – AgI system, selection of technological modes, preparation of single crystals and optical ceramics and investigation of their optical properties. The phase diagram of the AgCl – AgI system was refined, and a new phase diagram of AgCl – AgBr0.7I0.3 was investigated and constructed. In both diagrams, homogeneity and heterogeneity regions were found. In the AgCl – AgI diagram, the homogeneity region covers the concentration range from 0 to 7 mol. % AgI in AgCl, and the heterogeneity region from 7 to 98 mol. % AgI in AgCl. The phase diagram of AgCl – AgBr0.7I0.3 shows two regions of homogeneity in the concentration ranges of 0–49 and 78–100 mol. % AgBr0.7I0.3 in AgCl and one heterogeneous region from 47 to 87 mol. % AgBr0.7I0.3 in AgCl. In both systems in the regions of homogeneity it is possible to grow single crystals of the cubic NaCl crystal structure, space group Fm3m. For compositions of heterogeneous regions, it is possible to synthesize two-phase optical ceramics based on the cubic phase Fm3m and the hexagonal β-modification of AgI of wurtzite type (P63mc). The results of studies of phase diagrams of AgCl – AgI and AgCl – AgBr0.7I0.3 allowed us to determine the concentration ranges in the quasi three-component isothermal section of the AgCl – AgBr – AgI system. The obtained results allowed us to determine the compositions and select optimal technological modes, according to which single crystals of AgCl0.85Br0.10I0.05, AgCl0.72Br0.19I0.09, AgCl0.58Br0.29I0.13, AgCl0.97I0.03 and AgCl0.94I0.06 compositions were grown and optical ceramics of AgCl0.14Br0.60I0.26 composition were synthesized. The structure of the materials was determined by SEM analysis. The studied transmission ranges showed that single crystals and optical ceramics transmit radiation in the range from 0.48 to 41.7 μm and more with a maximum transparency level of up to 83 %. There are no absorption windows in the transmission spectra of the materials, which allows the developed optical materials to be used in the specified spectral ranges as transmission optics.

Highly Anisotropic Magnetism and Nearly Isotropic Magnetocaloric Effect in Mn3Sn2 Single Crystals

Mn3Sn2 has been proposed as an ideal material for magnetic refrigeration. It undergoes two successive ferromagnetic transitions (T C1 = 262 K and T C2 = 227 K) and one antiferromagnetic transition (T N = 192 K). Herein we report, for the first time, the preparation of single crystals of Mn3Sn2 from Bi flux. The resultant anisotropic magnetic properties and magnetocaloric effect are investigated along the three principal crystallographic directions of the crystal. Significant anisotropy of magnetic susceptibility and multiple field-induced metamagnetic transitions were found at low fields, whereas the magnetocaloric effect was found to be almost isotropic and larger than that of the polycrystalline one. The maximum magnetic entropy change amounts to −ΔS M = 4.01 J⋅kg−1⋅K−1 near T C1 under a magnetic field change of μ 0ΔH = 5 T along the c-axis, with the corresponding refrigerant capacity of 1750 mJ⋅cm−3. Combined with a much wider cooling temperature span (∼ 80 K), our results demonstrate Mn3Sn2 single crystal to be an attractive candidate working material for active magnetic refrigeration at low temperatures.

Comparative of HPHT and CVD diamond: performance and defect analysis for alpha radiation detector

Currently, the high-purity single crystal diamond preparation is still a challenging task, which restricts the application of diamond in electronics. In this paper, the chemical vapor deposition (CVD) IIa type single crystal diamond was prepared on the IIa type high pressure high temperature (HPHT) substrate by combining the chamber design with the plasma purifying technology, and the performance of diamond detectors using both IIa type single crystal diamonds were compared based on the defect analysis. The dislocations in diamonds were directly observed by synchrotron radiation X-ray white-beam topography. The CVD diamond shows the comparatively low dislocation density resulting from the high-quality HPHT diamond substrate. No observable NV impurity could be found in photoluminescence (PL) spectrum. The trace impurity of substitutional nitrogen (Ns) was characterized by electron paramagnetic resonance (EPR). It shows the very low concentration in the CVD diamond (2.1 ppb) compared with the several tens ppb in HPHT diamond. This value is comparable with the electronic-grade diamond reported by Element Six. Furthermore, both of the HPHT and CVD single crystal diamonds were packaged as the α-particle radiation detectors with the typical sandwich structure and used Ni/Al (50 nm/500 nm) as metal electrodes. The energy resolution of HPHT and CVD diamond detectors were 2.04% and 0.86%, respectively. Based on Schottky contact and defect regulation, at 0 voltage, the CVD diamond detector achieved response of α-particle radiation and the charge collection efficiency (CCE) was 10.76%. Under positive voltage, the CCE of HPHT and CVD diamond detectors were 38.11% and 86.65%, respectively. The deep level trapping effect of Ns impurities on charge carriers resulted in low CCE of HPHT diamond detector. The spatial polarization effect caused by defects leaded to the formation of an internal electric field, which was the main reason affecting the transport of charge carriers in CVD diamond.

Preparation and Characterization of Lithium Niobate Single Crystals Doped with 4.02–5.38 mol % Zn

Preparation and Characterization of Lithium Niobate Single Crystals Doped with 4.02–5.38 mol % Zn

Investigating the Fundamental Conditions for Quantitative Growth to Obtain High-Quality WS2 Using a Process of Physical Vapor Deposition

Two-dimensional layered transition-metal dichalcogenides (2D-TMDs) have garnered significant attention due to their layer number-dependent electronic properties, making them promising candidates for atomically thin electronics and optoelectronics. However, current research has primarily focused on exfoliated TMD materials, which have limitations in size, layer number control, and yield. Therefore, a crucial challenge remains in producing large single TMD crystals with precise control over the layer number. A comprehensive understanding and precise control of the growth conditions are imperative to address this challenge. This study systematically investigated key growth conditions, including temperature, precursor flow, growth duration, material quantity, gas flow, and slide position. By optimizing these parameters, we successfully synthesized TMD materials with an impressive size of 850 µm. Notably, we achieved the preparation of monolayer WS2 single crystals on a large scale within a remarkably short duration of 10 min, exhibiting a lateral growth rate of up to 1.4 μm/s, which is comparable to the best-exfoliated monolayers. The findings from our study provide a robust pathway for the rapid growth of high-quality TMD single crystals, facilitating further advancements in this field.

Growth of TiO2 single crystals by the Verneuil method at different gas flow ratio

The oxygen-rich atmosphere is a prerequisite for the preparation of high-quality TiO2 single crystals using the Verneuil method. However, too much oxygen will bring down the temperature of the growing chamber, so the key to growing high-quality TiO2 single crystals is to ensure that the temperature distribution is stable and that the heat in the growth chamber is in equilibrium. In this paper, TiO2 single crystals were prepared by the Verneuil method under different gas flow ratio. Due to the inability to obtain a stable temperature field, the crystals produced at the hydrogen-to-oxygen ratios of 1.4 and 1.8 both had substantial dislocation densities and low optical transmittance. The heat in the growth chamber reaches equilibrium and the temperature distribution is steady-state when the hydrogen-to-oxygen ratio is 1.6. The FWHM of the crystal obtained under this condition is 0.02334°, the transmittance is nearly 70 %, and the etch pit density is only 6.21 × 104 cm−2. This work is a major boost to the industrial production of rutile crystals.

Preparation and characterization of large-sized CdZnTe epitaxial single crystal

CdZnTe (CZT) epitaxial single crystal with a diameter of 2 inches and a thickness exceeding 1 mm was prepared by the closed spaced sublimation. In order to test the uniformity of the large-sized CZT epitaxial single crystal, the composition, crystalline quality, X-ray response performance and carrier transport property of the central and edge parts of the CZT crystal were characterized. The morphology images show that different areas have flat surfaces with dislocation densities between 3.5 × 104 cm−2 and 4.5 × 104 cm−2, respectively. The crystal quality shows a trend of better in the central region than in the edge. The bandgap is between 1.56 eV and 1.57 eV, and the resistivity is between 5 × 109Ω cm and 6 × 109Ω cm. The sensitivities of the detectors prepared with the edge and central areas to X-ray is 276.22 μCGy−1 cm−2 and 283.43 μCGy−1 cm−2, respectively. The carrier lifetime products of the edge and central parts were tested to be 3.932 × 10−4 cm 2 V−1 and 4.511 × 10−4 cm2 V−1, by fitting the Hecht equation. The lower (μτ)e values of the edge part may be higher dislocation density, which has a great impact on the transport process of charge carriers, as demonstrated by the photoluminescence (PL) results. The fabricated detectors have a stable response to 241Am@59.5 KeV gamma-ray, which shows great potential for future applications in the field of photon counting imaging.

Tailoring the defects and resistivity in CdZnTe single crystal via one-step annealing with CdTe compound

Defects deteriorate the optical and electronic properties of the cadmium zinc telluride (CZT) single crystal. However, the growth of defects, such as vacancies and precipitation, could not be avoided in the industrial-grade preparation of CZT single crystal. Therefore, it is crucial to explore ways to eliminate defects after growth. This paper employs one-step heat treatment with the CdTe compound as an annealing atmosphere source. After annealing, some large-size Te inclusions are eliminated in CZT crystal, but nano Te precipitates still exist. At the same time, the crystal surface becomes rougher, caused by the thermal migration of Te droplets, dislocation proliferation, and aggregation. Increasing annealing time, dislocations migrate, decompose, and interact with each other to form dislocation walls, stacking faults or terminating at the surface, reducing dislocation etch pit density. In addition, a large number of ordered phases are still found in the crystal. Single annealing with CdTe significantly improved the crystal's optical and electrical properties. After 180 h annealing, the infrared (IR) transmittance of the as-grown wafer increased from 40% to 65%, and resistivity increased from 2.2 × 109 Ω cm to 1.7 × 1011 Ω cm. Compared to reducing the Te precipitation phase, these increasements were mainly dominated by replacing point defects, like Cd vacancies.

Soluble and Processable Single-Crystalline Cationic Polymers.

Single-crystal-to-single-crystal (SCSC) polymerization offers an effective protocol for the environmentally friendly preparation of polymer single crystals (PSCs) with extremely high crystallinity and very large molecular weights. Single-crystal X-ray diffraction (SCXRD) serves as a powerful technique for the in-depth characterization of their structures at a molecular level. Hence, a fundamental understanding of the structure-property relationships of PSCs is within our reach. Most of the reported PSCs, however, suffer from poor solubility, a property which hampers their post-functionalization and solution processability when it comes to practical applications. Here, we report soluble and processable PSCs with rigid polycationic backbones by taking advantage of an ultraviolet-induced topochemical polymerization from an elaborately designed monomer that results in a multitude of photoinduced [2 + 2] cycloadditions. The high crystallinity and excellent solubility of the resulting polymeric crystals enable their characterization both in the solid state by X-ray crystallography and electron microscopy and in the solution phase by NMR spectroscopy. The topochemical polymerization follows first-order reaction kinetics to a first approximation. Post-functionalization of the PSCs by anion exchange renders them super-hydrophobic materials for water purification. Solution processability endows PSCs with excellent gel-like rheological properties. This research represents a major step towards the controlled synthesis and full characterization of soluble single-crystalline polymers, which may find application in the fabrication of PSCs with many different functions.

The Growth Pits Filling Mechanism of CdZnTe Epitaxial Film Prepared by Close-Spaced Sublimation Based on the First-Principles Calculation

The preparation of high quality II-VI semiconductor single crystal still is a challenging task. The II-VI ternary compound Cd1-xZnxTe is an outstanding candidate for room temperature nuclear radiation detectors. Therefore, the epitaxial mechanism of its film is profound to clarify for accurate growth regulation and quality improvement. However, determining the essence of epitaxial growth remains challenge only using experiments to explore the effects of growth conditions on film epitaxy. In this work, the growth pits filling mechanism of CdZnTe epitaxial film has been elucidated by combining the experimental results with the first-principles calculation. Based on the Atomic Force Microscope data, the structural characteristics of growth pits were analyzed, and the layered growth model and the lateral step growth model were proposed. According to Gibbs-Wulff crystal growth law, the stability of two growth pits filling models was compared through the first-principles simulations. By comparing surface energies, we identified that the filling process of growth pits relies on the movement of steps along the interface. These results well describe the deposition mechanism of CdZnTe film prepared by close-spaced sublimation and provide inspirations to accurately regulate the II-VI film growth and obtain high quality films.

General Spatial Confinement Recrystallization Method for Rapid Preparation of Thickness-Controllable and Uniform Organic Semiconductor Single Crystals.

Organic semiconductor single crystals (OSSCs) are ideal materials for studying the intrinsic properties of organic semiconductors (OSCs) and constructing high-performance organic field-effect transistors (OFETs). However, there is no general method to rapidly prepare thickness-controllable and uniform single crystals for various OSCs. Here, inspired by the recrystallization (a spontaneous morphological instability phenomenon) of polycrystalline films, a spatial confinement recrystallization (SCR) method is developed to rapidly (even at several second timescales) grow thickness-controllable and uniform OSSCs in a well-controlled way by applying longitudinal pressure to tailor the growth direction of grains in OSCs polycrystalline films. The relationship between growth parameters including the growth time, temperature, longitudinal pressure, and thickness is comprehensively investigated. Remarkably, this method is applicable for various OSCs including insoluble and soluble small molecules and polymers, and can realize the high-quality crystal array growth. The corresponding 50 dinaphtho[2,3-b:2″,3″-f]thieno[3,2-b]thiophene (DNTT) single crystals coplanar OFETs prepared by the same batch have the mobility of 4.1 ± 0.4 cm2 V-1 s-1 , showing excellent uniformity. The overall performance of the method is superior to the reported methods in term of growth rate, generality, thickness controllability, and uniformity, indicating its broad application prospects in organic electronic and optoelectronic devices.

Crystal Chemistry of the Copper Oxalate Biomineral Moolooite: The First Single-Crystal X-ray Diffraction Studies and Thermal Behavior.

Moolooite, Cu(C2O4)·nH2O, is a typical biomineral which forms due to Cu-bearing minerals coming into contact with oxalic acid sources such as bird guano deposits or lichens, and no single crystals of moolooite of either natural or synthetic origin have been found yet. This paper reports, for the first time, on the preparation of single crystals of a synthetic analog of the copper-oxalate biomineral moolooite, and on the refinement of its crystal structure from the single-crystal X-ray diffraction (SCXRD) data. Along with the structural model, the SCXRD experiment showed the significant contribution of diffuse scattering to the overall diffraction data, which comes from the nanostructural disorder caused by stacking faults of Cu oxalate chains as they lengthen. This type of disorder should result in the chains breaking, at which point the H2O molecules may be arranged. The amount of water in the studied samples did not exceed 0.15 H2O molecules per formula unit. Apparently, the mechanism of incorporation of H2O molecules governs the absence of good-quality single crystals in nature and a lack of them in synthetic experiments: the more H2O content in the structure, the stronger the disorder will be. A description of the crystal structure indicates that the ideal structure of the Cu oxalate biomineral moolooite should not contain H2O molecules and should be described by the Cu(C2O4) formula. However, it was shown that natural and synthetic moolooite crystals contain a significant portion of "structural" water, which cannot be ignored. Considering the substantially variable amount of water, which can be incorporated into the crystal structure, the formula Cu(C2O4)·nH2O for moolooite is justified.

Controllable Oxidation of ZrS2 to Prepare High-κ, Single-crystal m-ZrO2 for 2D Electronics.

High-κ materials that exhibit large permittivity and band gaps are needed as gate dielectrics to enhance capacitance and prevent leakage current in downsized technology nodes. Among these, monoclinic ZrO2 (m-ZrO2 ) shows good potential because of its inertness and high-κ with respect to SiO2 , but a method to produce ultrathin single crystal is lacking. Here, the controllable preparation of ultrathin m-ZrO2 single crystals via the in situ thermal oxidation of ZrS2 is achieved. As-grown m-ZrO2 presents an equivalent oxide thickness of ≈0.29nm, a high dielectric constant of ≈19, and a breakdown voltage (EBD ) of ≈7.22 MV cm-1 . MoS2 field effect transistor (FET) by using m-ZrO2 as a dielectric layer shows comparable mobility to that using SiO2 dielectric. The ultraclean interface of m-ZrO2 /MoS2 and high crystalline quality of m-ZrO2 lead to negligible hysteresis in transfer curves. Single crystal m-ZrO2 dielectric shows potential application in digital complementary metal oxidesemiconductor (CMOS) logic FET.