Precursor Layer Research Articles

Sheet conductance of laser-doped layers using a Gaussian laser beam: an effective depth approximation

Laser doping of silicon with pulsed and scanned laser beams is now well-established to obtain defect-free, doping profile tailored, and locally selectively doped regions with a high spatial resolution. Picking the correct laser parameters (pulse power, pulse shape, and scanning speed) impacts the depth and uniformity of the melted region geometry. This work performs laser doping on the surface of single crystalline silicon, using a pulsed and scanned laser profile with a Gaussian intensity distribution. A deposited boron oxide precursor layer serves as a doping source. Increasing the local inter-pulse distance xirr\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$x_\ ext {irr}$$\\end{document} between subsequent pulses causes a quadratic decrease of the sheet conductance Gsh\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$G_\ ext {sh}$$\\end{document} of the doped surface layer. Here, we present a simple geometric model that explains all experimental findings. The quadratic dependence stems from the approximately parabolic shape of the individual melted regions directly after the laser beam has hit the Si surface. The sheet resistance depends critically on the intersection depth dch\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$d_\ ext {ch}$$\\end{document} and the distance xirr\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$x_\ ext {irr}$$\\end{document} of overlap between two subsequent, neighboring pulses. The intersection depth dch\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$d_\ ext {ch}$$\\end{document} quadratically depends on the pulse distance xirr\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$x_\ ext {irr}$$\\end{document} and therefore also on the scanning speed vscan\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$v_\ ext {scan}$$\\end{document} of the laser. Finally, we present a simple model that reduces the complicated three dimensional, laterally inhomogeneous doping profile to an effective two-dimensional, homogeneously doped layer which varies its thickness with the scanning speed.

Effects of Alkali Elements on Copper Indium Gallium Aluminum Selenide Flexible Solar Cells Fabricated on Polyimide Substrates.

Polycrystalline Cu(InGaAl)Se2 (CIGAS) thin films were prepared on polyimide (PI) foils by depositing aluminum (Al) and CIGS precursor layers. Three ceramic CIGS quaternary targets with different sodium (Na) contents were used for investigating the influences of alkali doping at an annealing temperature of 500 °C. The Al concentration was enriched at the front interfaces of absorber films with different Na doping amounts after annealing. Na in the precursor layer diffused to both interfaces during the annealing process, most Na diffused into the Mo layer, and Na existed in the annealed film as compounds Na2Sex and Na2SeO3. An appropriate amount Na element could be beneficial for grain growth in the region beneath the surface. Low Na doping had no significant effect on the crystallization property. High Na doping effected the diffusion of the Cu2-xSe liquid phase and reduced the grain size. On the basis of good crystallization, the passivation effect of Na can effectively improve the performance of cells. A certified power conversion efficiency of 16.19% of a CIGAS flexible solar cell with a 0.54 cm2 active area has been achieved.

Step-by-step in-situ preparation of magnesium-aluminum layered double hydroxide film to improve the corrosion resistance of AZ31 magnesium alloy

In this study, a hydrothermal method was employed to cultivate Mg(OH)2 precursor layers on the surface of AZ31 magnesium alloy samples. Subsequently, Mg-Al LDHs films were successfully synthesized through an in-situ growth approach. The phase composition of the films were analyzed using X-ray diffraction and infrared spectroscopy. The growth process and surface morphology of the films at the microstructure level were examined and interpreted using scanning electron microscopy and EDS. The corrosion resistance of the films was assessed through potentiodynamic polarization curves, electrochemical impedance spectroscopy, and hydrogen evolution tests. The findings indicate that the Mg(OH)2 precursor effectively mitigates defects in the Mg-Al LDHs films and improves the LDHs microstructure. Moreover, the precursor synthesized at a pH range of 10–12 better enhances the corrosion resistance of the Mg-Al LDHs film.

Correlating Molecular Precursor Interactions with Device Performance in Solution-Processed Cu2ZnSn(S,Se)4 Thin-Film Solar Cells.

Research efforts aimed at improving the crystal quality of solution-processed Cu2ZnSn(S,Se)4 (CZTSSe) absorbers have largely employed delicate pre- and postprocessing strategies, such as multistep selenization, heat treatment in mixed chalcogen atmospheres, and multinary extrinsic doping that are often complex and difficult to reproduce. On the other hand, understanding and tuning chemical interactions in precursor inks prior to the thin-film deposition have received significantly less attention. Herein, we show for the first time how the complexation of metallic and chalcogen precursors in solution have a stark influence on the crystallization and optoelectronic quality of CZTSSe absorbers. By varying thiourea to metal cation ratios (TU/M) in dimethylformamide (DMF) and isopropyl alcohol (IPA)-based inks, we observed the formation of nanoscale metal-organic complexes and submicron size aggregates which play a key role in the morphology of the precursor layers obtained by spin-coating and drying steps. We also identify the primary cations in the complexation and assembling processes in solution. The morphology of the precursor film, in turn, has an important effect on grain growth and film absorber structure after the reactive annealing in the presence of Se. Finally, we establish a link between metal complexes in precursor solutions and device performance, with power conversion efficiency increasing from approximately 2 to 8% depending on the TU/M and Cu/(Zn + Sn) ratios.

Simultaneous Li-Doping and Formation of SnO2-Based Composites with TiO2: Applications for Perovskite Solar Cells.

Tin oxide (SnO2) has been recognized as one of the beneficial components in the electron transport layer (ETL) of lead-halide perovskite solar cells (PSCs) due to its high electron mobility. The SnO2-based thin film serves for electron extraction and transport in the device, induced by light absorption at the perovskite layer. The focus of this paper is on the heat treatment of a nanoaggregate layer of single-nanometer-scale SnO2 particles in combination with another metal-dopant precursor to develop a new process for ETL in PSCs. The combined precursor solution of Li chloride and titanium(IV) isopropoxide (TTIP) was deposited onto the SnO2 layer. We varied the heat treatment conditions of the spin-coated films comprising double layers, i.e., an Li/TTIP precursor layer and SnO2 nanoparticle layer, to understand the effects of nanoparticle interconnection via sintering and the mixing ratio of the Li-dopant on the photovoltaic performance. X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HR-TEM) measurements of the sintered nanoparticles suggested that an Li-doped solid solution of SnO2 with a small amount of TiO2 nanoparticles formed via heating. Interestingly, the bandgap of the Li-doped ETL samples was estimated to be 3.45 eV, indicating a narrower bandgap as compared to that of pure SnO2. This observation also supported the formation of an SnO2/TiO2 solid solution in the ETL. The utilization of such a nanoparticulate SnO2 film in combination with an Li/TTIP precursor could offer a new approach as an alternative to conventional SnO2 electron transport layers for optimizing the performance of lead-halide perovskite solar cells.

In Situ Laser-Induced 3D Porous Graphene within Transparent Polymers for Encapsulation-Free and Tunable Ultrabroadband Terahertz Absorption.

Three-dimensional (3D) porous carbon materials have great potential for fabricating flexible tunable broadband absorbers owing to their high electrical conductivity, strong dielectric loss, and unique microstructure. Herein, we introduce an innovative method for synthesizing 3D porous graphene that incorporates advanced tuning and encapsulation processes to augment its functional efficacy. Through the modulation of both thermal and nonthermal interactions between a femtosecond (fs) laser and a polydimethylsiloxane (PDMS) film, we have synergistically fine-tuned the surface morphology and lattice properties of 3D porous graphene. This approach enabled us to create a flexible terahertz (THz) absorber with customizable characteristics, boasting an impressive absorbance range of 80%-99% in the 0.4-1.0 THz spectrum, alongside a peak reflection loss (RL) of up to 35.6 dB. Furthermore, we have successfully demonstrated the production of photoinduced 3D porous graphene within a PDMS film, which serves as both a carbon precursor and protective layer. This simplifies the conventional packaging process. These devices exhibit a RL of up to 41.6 dB and an absorption bandwidth of 2.5 THz (0.6-3.1 THz). Our study presents a production methodology for high-performance, flexible THz absorbers, offering a straightforward and innovative solution for the rapid development of sophisticated, flexible THz absorbing materials.

Precise Alkali Supply during and after Growth for High‐Performance Low Bandgap (Ag,Cu)InSe2 Solar Cells

Alkali treatments are crucial for low bandgap (Ag,Cu)InSe2 (ACIS) and Cu(In,Ga)Se2‐based solar cell performance. Traditionally, Ag‐alloying of CIS (ACIS) is grown on soda‐lime glass (SLG) at temperatures exceeding 500 °C, resulting in uncontrolled alkali diffusion from the substrate and variable photovoltaic properties. A substrate‐independent low‐bandgap ACIS growth process is introduced and the impact of controlled supplies of NaF and RbF alkali fluorides before and after absorber growth through precursor layers and post‐deposition treatments (PDT) are investigated. NaF and RbF precursor layers enhance carrier lifetimes and doping density, outperforming the previous SLG‐dependent strategy. Even small quantities of RbF significantly enhance device performance, while specific NaF amount during deposition are necessary to limit grain growth and achieve high doping densities and lifetimes. A certain density of grain boundaries appears crucial for high doping levels. Although subsequent NaF post‐deposition treatment (PDT) does not provide additional benefits with sufficient Na during growth, RbF‐PDT remains crucial. The best performance is achieved with a combination of NaF and RbF precursor layers along with RbF‐PDT, resulting in over 19% efficiency, 605 mV open‐circuit voltage (VOC), 73% fill factor (FF), a carrier density of 3 × 1016 cm−3, and a 700 ns lifetime. This approach supports high‐efficiency ACIS solar cell advancement, particularly for thin‐film tandem photovoltaic devices.

Rheological Investigation of Highly Filled Copper(II) Oxide Nanosuspensions to Optimize Precursor Particle Content in Reductive Laser-Sintering

In this article, the particle concentration of finely dispersed copper(II) oxide nanosuspensions as precursors for reductive laser sintering (RLS) is optimized on the basis of rheological investigations. For this metallization process, a smooth, homogeneous and defect-free precursor layer is a prerequisite for adherent and reproducible copper structures. The knowledge of the rheological properties of an ink is crucial for the selection of a suitable coating technology as well as for the adjustment of the ink formulation. Different dilutions of the nanosuspension were examined for their rheological behavior by recording flow curves. A strong shear thinning behavior was found and the viscosity decreases exponentially with increasing dilution. The viscoelastic behavior was investigated by a simulated doctor blade coating process using three-interval thixotropy tests. An overshoot in viscosity is observed, which decreases with increasing thinning of the precursor. As a comparison to these results, doctor blade coating of planar glass and polymer substrates was performed to prepare precursor layers for reductive laser sintering. Surface morphology measurements of the resulting coatings using laser scanning microscopy and rheological tests show that homogeneous precursor layers with constant thickness can be produced at a particle–solvent ratio of 1.33. A too-high particle content results in an irregular coating layer with deep grooves and a peak-to-valley height Sz of up to 7.8 μm. Precise dilution control allows the fabrication of smooth surfaces with a Sz down to 1.5 μm.

Metal-phenolic network as precursor complex coating for forward osmosis membrane with enhanced antifouling property.

In this study, a multi-functional layer was developed based on the commercially available cellulose triacetate (CTA) forward osmosis (FO) membrane to improve its antifouling property. Tannic acid/ferric ion (TA/Fe3+) complexes were firstly coated as a precursor layer on the membrane surface via self-assembly. Afterwards, the tannic acid/diethylenetriamine (TA/DETA) hydrophilic functional layer was further coated, following Ag/polyvinylpyrrolidone (PVP) anti-bacterial layer was formed in situ through the reducibility of TA to obtain TA/Fe3+-TA/DETA-Ag/PVP-modified membrane. The optimized precursor layer was acquired by adjusting the buffer solution pH to 8, TA/Fe3+ ratio to 4 and the number of self-assembled layers to 5. The permeability testing results illustrated that the functional layer had an insignificant effect on the membrane transport parameters. The TA/Fe3+-TA/DETA-Ag/PVP-modified membrane simultaneously exhibited excellent physical and chemical stability. The coated membrane also demonstrated enhanced anti-bacterial properties, achieving 98.63 and 97.30% inhibition against Staphylococcus aureus and Escherichia coli, respectively. Furthermore, the dynamic fouling experiment showed a 12% higher water flux decrease for the TA/Fe3+-TA/DETA-Ag/PVP CTA membrane compared to the nascent CTA membrane, which proved its excellent antifouling performance. This work provides a feasible strategy to heighten the antifouling property of the CTA FO membrane.

Improving antifouling performance of FO membrane by surface immobilization of silver nanoparticles based on a tannic acid: diethylenetriamine precursor layer for municipal wastewater treatment.

In this study, a facile method for multifunctional surface modification on forward osmosis (FO) membrane was constructed by surface immobilization of AgNPs based on tannic acid (TA)/diethylenetriamine (DETA) precursor layer. The cellulose triacetate (CTA) FO membranes modified by TA and DETA with different co-deposition time (6 h, 12 h, 24 h) were investigated. Results indicated that the TA/DETA (24)-Ag CTA membrane with a TA/DETA co-deposition time of 24 h was identified to be optimal, which attained more hydrophilic. And it had the bacterial mortality of Escherichia coli and Staphylococcus aureus reaching 98.23% and 99.83% respectively and possessed excellent physical and chemical binding stability. Meanwhile, the coating layer resulted in the antifouling ability without damaging the membrane intrinsic transport characteristics. As for synthetic municipal wastewater treatment, the water flux of CTA FO membrane decreased approximately 49% of the initial flux after running for 14 days. In contrast, the flux decline rate of TA/DETA (24)-Ag CTA membrane was about 37%. Furthermore, less foulant deposition and higher recovery rate of water flux was observed for TA/DETA (24)-Ag CTA membrane, implying that the modified membrane effectively alleviated membrane fouling and processed a lower flux decline during municipal wastewater treatment. It was attributed to the enhanced surface hydrophilicity and antibacterial property of the coating layer, which improved antifouling property.

Effect of Pre‐annealing Treatment on Growth and Properties of (Cu0.5Ag0.5)2ZnSnSe4 Thin Films

In this work, the preparation of “Ag” alloying Cu2ZnSnSe4 films using a two‐step process, comprising vacuum evaporated ([Sn/ZnSe/Ag/Sn/ZnSe/Cu] × 2) precursor layer deposition on glass substrates followed by low‐temperature pre‐annealing treatment (PAT) in Se ambiance (200–400 °C) for 30 min and high‐temperature annealing at 500 °C for 1 min, is reported. The low‐temperature PAT provides adequate Se diffusion into precursor layers and plays a pivotal influence on the growth and properties of (Cu,Ag)2ZnSnSe4 films. The Zn/Sn and Se/metals ratios are found to be varied in the range 0.77–1.32 and 1.07–0.86 with PAT (200–400 °C) followed by annealing at 500 °C for 1 min. The precursor layers are pre‐annealed at 300 °C for 30 min, followed by annealing at 500 °C for 1 min, found to be nearly stoichiometric with uniform distribution of constituents. The valence states of the constituents are confirmed by X‐Ray photoelectron spectroscopy. Both X‐Ray diffraction and Raman studies confirm the formation of single‐phase (Cu,Ag)2ZnSnSe4 along (112) orientation with a strong Raman mode at 194 cm−1. Large and well‐defined grains with a mean size of 0.7 μm are seen in the field‐emission scanning electron microscope images. The (Cu,Ag)2ZnSnSe4 films exhibit a direct bandgap of 1.12 eV and p‐type conductivity with high mobility, 5.23 cm2 V−1 s−1.

A backbone support structure and capillary effect-induced high-flux MOF-based mixed-matrix membrane for selective dye/salt separation

Metal-organic frameworks (MOFs) based mixed-matrix membranes (MMMs) exhibited an excellent promise for separating dye molecules and salt ions due to their permeability and selectability. However, controlling interfacial compatibility between the polymer and MOFs remained challenging, and MOF-based MMMs were poorly processable. Herein, the dual-bath coagulation method was developed to form the polyvinylidene fluoride (PVDF) and polyvinylpyrrolidone (PVP) polymer precursor layer, which provided a skeleton support structure. Inspired by the capillary effect, the nanosheet copper-ZIFs were in situ grown in the skeleton support structure, forming capillary microporous channels. The formation of capillary microporous channels endowed the MOF-based MMMs with high permeability of water molecules. Interestingly, the MOF@PVDF/PVP membrane exhibited excellent water permeance (ca. 635.7 L·m−2·h−1·bar) and selectivity for dye/salt separation (dye removal approaching 100 %, salt removal < 10 %). Even for the cationic small-molecule dyes, the MMMs showed an outstanding rejection (e.g., 96.3 % for malachite green and 96.7 % for methylene blue). The water permeance of the MOF@PVDF/PVP membrane was much higher than that of most membranes with similar rejection rates for dyes. Besides, the antifouling and antibacterial properties confirm that the MMMs could maintain long-term stability in practical dyeing wastewater treatment. This study provides an efficient approach to preparing MOF-based MMMs with capillary and skeleton support structures, which exhibited superior performance and outstanding stability for water purification.

Sequentially PVD‐Grown Indium and Gallium Selenides Under Compositional and Layer Thickness Variation: Preparation, Structural and Optical Characterization

AbstractGroup IIIA metal chalcogenides are an auspicious material system due to their variability of properties and hence the multitude of application options, for example, in the fields of optoelectronic, thermoelectric, piezo‐, and ferroelectric devices. Indium and gallium selenide films are innovatively grown in a sequential PVD (physical vapor deposition) process starting from metal precursor layers of various thicknesses, which are then subject to chalcogenization in different selenium contents. The resulting thin films are investigated for structural and optical properties by Raman, XRD (X‐ray diffraction), and UV–Vis–NIR spectrometry, revealing that all the compounds In2Se3, InSe, In4Se3, Ga2Se3, and GaSe as well as different polytypes can be achieved depending on the metal/chalcogen ratio. Results from Raman and XRD spectroscopy are highly consistent, and also from the optical measurements changes in absorption characteristics can be correlated. The results indicate, that by fine‐tuning the selenium content, deliberately growing ultra‐thin layers of the different indium and gallium phases will be possible, thus opening up a promising route for 2D material fabrication. Given the scalability of the fabrication method, it is highly promising for large‐scale deployment of the materials.

Protein–polyphenol nanoassemblies modulated construction of zeolitic imidazole framework-67 based nanofiltration membrane for effective separation of dye/salt mixtures

Metal–organic frameworks (MOFs) show great potential in various separation applications. However, fast nucleation rate and crystallization of MOFs, produce non-uniform and uncontrollable sized crystals, which are not suitable for the formation of MOF-based membranes. Herein, we propose the concept of utilizing protein polyphenol nanoassemblies (PPNs) as the building blocks for the confined growth of MOFs to fabricate zeolitic imidazolate frameworks (ZIF-67)-based membranes. We first demonstrated that colloidal PPNs as modulators in solution enables the formation of ZIF-67 MOFs with uniform and controllable crystal sizes. Subsequently, we utilized the metal salt coordinated PPNs (Co2+@PPN) as the precursor layer matrix deposited on porous polymeric support to fabricate ZIF-67 membranes via in-situ growth strategy at room temperature. The resultant membrane features a robust heterogeneous and well-integrated ZIF-67-reinforced PPN (ZIF-67@PPN) microporous networks. Benefiting from the rigid and multidimensional micropores of ZIF-67, the optimized ZIF-67@PPN1 composite membrane with improved water stability exhibited good water permeance (45.68 L m−2 h−1 bar−1), excellent dye desalination performance (Na2SO4/Congo red selectivity of 1271.47), and good antibiotic desalination performance (NaCl/Erythromycin selectivity of 21.46). The findings in this work provide important engineering concepts for the development of MOF-based membranes using sustainable nature-derived building blocks for emergent environment-relevant desalination applications in the chemical process industry.

Synthesis of BaZrS3 and BaS3 Thin Films: High and Low Temperature Approaches

Current research efforts in the field of the semiconducting chalcogenide perovskites are directed towards the fabrication of thin films and subsequently determine their performance in the photovoltaic application. These efforts are motivated by the outstanding properties of this class of materials in terms of stability, high absorption coefficient near the band edge and no significant health concerns compared to their halide counterparts. The approach followed here is to use stacked precursor layers and is adopted from other chalcogenide photovoltaic materials like the kesterites and chalcopyrites. The successful synthesis of BaZrS3 from stacked layers of BaS and Zr and annealing at high temperatures (~1100 °C) with the addition of elemental sulfur is demonstrated. However, the film shows the presence of secondary phases and a flawed surface. As an alternative to this, BaS3 could be used as precursor due to its low melting point of 554 °C. Previously, the fabrication of BaS3 films was demonstrated, but in order to utilize them in the fabrication of BaZrS3 thin films, their microstructure and processing are further improved in this work by reducing the synthesis temperature to 300 °C, resulting in a smoother surface. This work lays the groundwork for future research in the fabrication of chalcogenide perovskites utilizing stacked layers and BaS3.

Improving device performance of sputtered CZTSe based solar cells by Manganese doping

Despite many efforts, Cu2ZnSnSe4 (CZTSe) based solar cells have remained relatively low efficiency compared to other thin film-based devices. One of the prevalent strategies used to improve cell performance in CZTSe is cation substitution. In this contribution, the effects of substituting Mn for Zn on CZTSe solar cell performance were systematically examined. Samples with various Mn content were grown by a two-stage method involving high temperature annealing of precursor layers comprising Cu, Zn, Sn, Mn and Se. All of the samples were found to have Cu-poor and (Zn + Mn)-rich or nearly stoichometric compositions. They crystalized in kesterite phase irrespective of the Mn content as confirmed by X-ray diffraction (XRD), Raman and X-ray photoelectron spectroscopy (XPS) measurements. The highest efficiency solar cell (5.56%) was obtained employing the 5% Mn doped CZTSe absorber. This film was found to have improved microstructure and reduced defect density. This is the first report on over 5% efficient kesterite thin film solar cell fabricated on a Cu2Mn0.05Zn0.95SnSe4absorber layer.

Synthesis of ZnS/Al2O3/TaSe2 Core/Shell Nanowires Using Thin Ta Metal Film Precursor

This study introduces a novel approach for fabricating ZnS/Al2O3/TaSe2 heterostructured core/shell nanowires (NWs) through the selenization of a metallic Ta thin film precursor. The synthesis process involves a meticulously designed four-step protocol: (1) generating ZnS NWs on an oxidized silicon substrate, (2) encapsulating these NWs with a precisely controlled thin Al2O3 layer via atomic layer deposition (ALD), (3) applying a Ta precursor layer by magnetron sputtering, and (4) annealing in a Se-rich environment in a vacuum-sealed quartz ampoule to transform the Ta layer into TaSe2, resulting in the final core/shell structure. The characterization of the newly produced NWs using scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) was validated using the integrity and composition of the heterostructures. Our method not only establishes a new pathway for the synthesis of TaSe2-based core/shell NWs but also extends the potential for creating a variety of core/shell NW systems with chalcogenide shells by adapting the thin film metal precursor approach. This versatility opens the way for future advancements in nanoscale material applications, particularly in electronics and optoelectronics where core/shell geometries are increasingly important.

Synthesis of WS2 Ultrathin Films by Magnetron Sputtering Followed by Sulfurization in a Confined Space

In the quest for advanced materials suitable for next-generation electronic and optoelectronic applications, tungsten disulfide (WS2) ultrathin films have emerged as promising candidates due to their unique properties. However, obtaining WS2 directly on the desired substrate, eliminating the need for transfer, which produces additional defects, poses many challenges. This paper aims to explore the synthesis of WS2 ultrathin films via physical vapor deposition (PVD) followed by sulfurization in a confined space, addressing the challenge of film formation for practical applications. Precursor layers of tungsten and WS2 were deposited by RF magnetron sputtering. Subsequent sulfurization treatments were conducted in a small, closed, graphite box to produce WS2 films. The physical and chemical properties of these precursor and sulfurized layers were thoroughly characterized using techniques such as X-ray reflectometry (XRR), X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS). The findings reveal notable distinctions in film thickness, structural orientation, and chemical composition, attributable to the different precursor used. Particularly, the sulfurized layers from the tungsten precursor exhibited a preferred orientation of WS2 crystallites with their (00L) planes parallel to the substrate surface, along with a deviation from parallelism in a small angular range. This study highlights the necessity of precise control over deposition and sulfurization parameters to tailor the properties of WS2 films for specific technological applications.

Structuring Interdigitated Back Contact Solar Cells Using the Enhanced Oxidation Characteristics Under Laser‐Doped Back Surface Field Regions

Interdigitated back contact (IBC) architecture can yield among the highest silicon wafer‐based solar cell conversion efficiencies. Since both polarities are realized on the rear side, there is a definite need for a patterning step. Some of the common patterning techniques involve photolithography, inkjet patterning, and laser ablation. This work introduces a novel patterning technique for structuring the rear side of IBC solar cells using the enhanced oxidation characteristics under the locally laser‐doped n++ back surface field (BSF) regions with high‐phosphorous surface concentrations. Phosphosilicate glass layers deposited via POCl3 diffusion serve as a precursor layer for the formation of local heavily laser‐doped n++ BSF regions. The laser‐doped n++ BSF regions exhibit a 2.6‐fold increase in oxide thickness compared to the nonlaser‐doped n+ BSF regions after undergoing high‐temperature wet thermal oxidation. The utilization of oxide thickness selectivity under laser‐doped and nonlaser‐doped regions serves two purposes in the context of the IBC solar cell, first patterning rear side and second acting as a masking layer for the subsequent boron diffusion. Proof‐of‐concept solar cells are fabricated using this novel patterning technique with a mean conversion efficiency of 20.41%.

Improving the thermoelectric performance of p-type (BixSb1−x)2Te3 thin films via tuning the BixSb1−x layer

Through annealing the precursor layer BixSb1−x combined with thickness variation, the Seebeck coefficient and electrical conductivity are increased simultaneously in (BixSb1−x)2Te3. A resultant high PF of 37.78 μW cm−1 K−2 is obtained.