Precursors For Deposition Research Articles

Vapor Infiltration Synthesis of Indium Sulfide Magic Size Cluster.

The energetically favorable formation of atomically precise clusters, known as magic size clusters, in the solution phase enables a precision nanoscale synthesis with exquisite uniformity. We report the synthesis of magic size clusters via vapor infiltration of atomic layer deposition precursors directly in a polymer thin film. Sequential infiltration of trimethylindium vapor and hydrogen sulfide gas into poly(methyl methacrylate) leads to the formation of clusters with uniform properties consistent with a magic size cluster─In6S6(CH3)6. While an increase in cluster size might be expected with additional sequential infiltration cycles of the reactive In and S precursors, uniform properties consistent with magic size clusters form in multiple polymers under a range of processing conditions. Ultraviolet-visible absorption spectra of In6S6(CH3)6 are largely independent of the number of sequential infiltration cycles and exhibit air stability, both of which are attributed to an energetically favorable synthetic pathway that is evaluated with density functional theory.

Influence of the Carrier Gas Flow in the CVD Synthesis of 2-Dimensional MoS2 Based on the Spin-Coating of Liquid Molybdenum Precursors

Atomically thin molybdenum disulfide (MoS2) is a two-dimensional semiconductor with versatile applications. The recent adoption of liquid molybdenum precursors in chemical vapor deposition has contributed significantly to the reproducible wafer-scale synthesis of MoS2 monolayer and few-layer films. In this work, we study the effects of the carrier gas flow rate on the properties of two-dimensional molybdenum disulfide grown by liquid-precursor-intermediate chemical vapor deposition on SiO2/Si substrates. We characterized the samples using Optical Microscopy, Scanning Electron Microscopy, Raman spectroscopy, and Photoluminescence spectroscopy. We analyzed samples grown with different nitrogen carrier flows, ranging from 150 to 300 sccm, and discussed the effect of carrier gas flows on their properties. We found a correlation between MoS2 flake lateral size, shape, and number of layers, and we present a qualitative growth model based on changes in sulfur provision caused by different carrier flows. We show how the use of liquid precursors can allow for the synthesis of homogeneous, single-layer flakes up to 100 µm in lateral size by optimizing the gas flow rate. These results are essential for gaining a deeper understanding of the growth process of MoS2.

Ambient pressure x-ray photoelectron spectroscopy study on the initial atomic layer deposition process of platinum

The initial adsorption of MeCpPtMe3 is investigated using synchrotron-based ambient pressure x-ray photoelectron spectroscopy (XPS). The experiments are done on a native oxide-covered Si substrate. In addition, a reaction with O2 and the created Pt surface was investigated. Inspiration for the reaction studies was found from atomic layer deposition of metallic Pt, process that uses the same compounds as precursors. With time-resolved XPS, we have been able to observe details of the deposition process and especially see chemical changes on the Pt atoms during the initial deposition of the Pt precursor. The change of the binding energy of the Pt 4f core level appears to occur on a different timescale than the growth of the active surface sites. The very long pulse of the Pt precursor resulted in a metallic surface already from the beginning, which suggest chemical vapor deposition-like reactions occurring between the surface and the precursor molecules in this experiment. Additionally, based on the XPS data measured after the Pt precursor pulse, we can make suggestions for the reaction pathway, which point toward a scenario that leaves carbon from the MeCpPtMe3 precursor on the surface. These carbon species are then efficiently removed by the subsequent coreactant pulse, leaving behind a mostly metallic Pt film.

Growth Kinetics of Graphene on Cu(111) Foils from Methane, Ethyne, Ethylene, and Ethane

AbstractChemical vapor deposition of carbon precursors on Cu‐based substrates at temperatures exceeding 1000 °C is currently a typical route for the scalable synthesis of large‐area high‐quality single‐layer graphene (SLG) films. Using molecules with higher activities than CH4 may afford lower growth temperatures that might yield fold‐ and wrinkle‐free graphene. The kinetics of growth of graphene using hydrocarbons other than CH4 are of interest to the scientific and industrial communities. We measured the growth rates of graphene islands on Cu(111) foils by using C2H2, C2H4, C2H6 and CH4, respectively (each mixed with H2). From such kinetics data we obtain the activation enthalpy (ΔH≠) of graphene growth as shown in parentheses (C2H2 (0.93±0.09 eV); C2H4 (2.05±0.19 eV); C2H6 (2.50±0.11 eV); CH4 (4.59±0.26 eV)); C2Hy (y=2, 4, 6) show similar growth behavior but CH4 is different. Computational fluid dynamics and density functional theory simulations suggest that C2Hy differs from CH4 due to different values of adsorption energy and the lifetime of relevant carbon precursors on the Cu(111) surface. Combining experimental and simulation results, we find that the rate determining step (RDS) is the dissociation of the first C−H bond of CH4 molecules in the gas phase, while the RDS using C2Hy is the first dehydrogenation of adsorbed C2Hy that happens with assistance of H atoms adsorbed on the Cu(111) surface. By using C2H2 as the carbon precursor, high‐quality single‐crystal adlayer‐free SLG films are achieved on Cu(111) foils at 900 °C.

Growth Kinetics of Graphene on Cu(111) Foils from Methane, Ethyne, Ethylene, and Ethane.

Chemical vapor deposition of carbon precursors on Cu-based substrates at temperatures exceeding 1000 °C is currently a typical route for the scalable synthesis of large-area high-quality single-layer graphene (SLG) films. Using molecules with higher activities than CH4 may afford lower growth temperatures that might yield fold- and wrinkle-free graphene. The kinetics of growth of graphene using hydrocarbons other than CH4 are of interest to the scientific and industrial communities. We measured the growth rates of graphene islands on Cu(111) foils by using C2H2, C2H4, C2H6 and CH4, respectively (each mixed with H2). From such kinetics data we obtain the activation enthalpy (ΔH≠) of graphene growth as shown in parentheses (C2H2 (0.93±0.09 eV); C2H4 (2.05±0.19 eV); C2H6 (2.50±0.11 eV); CH4 (4.59±0.26 eV)); C2Hy (y=2, 4, 6) show similar growth behavior but CH4 is different. Computational fluid dynamics and density functional theory simulations suggest that C2Hy differs from CH4 due to different values of adsorption energy and the lifetime of relevant carbon precursors on the Cu(111) surface. Combining experimental and simulation results, we find that the rate determining step (RDS) is the dissociation of the first C-H bond of CH4 molecules in the gas phase, while the RDS using C2Hy is the first dehydrogenation of adsorbed C2Hy that happens with assistance of H atoms adsorbed on the Cu(111) surface. By using C2H2 as the carbon precursor, high-quality single-crystal adlayer-free SLG films are achieved on Cu(111) foils at 900 °C.

Silyl- and Germyl-Substituted Boranes: Synthesis and Investigation as Potential Atomic Layer Deposition Precursors.

Boranes featuring bulky hypersilyl or supersilyl groups and/or sterically unencumbered trimethylgermyl substituents were synthesized for investigation as potential precursors for atomic layer deposition (ALD) of elemental boron. The envisaged ALD process would employ a boron trihalide coreactant, exploiting the formation of strong silicon-halogen and germanium-halogen bonds as a driving force. The alkali metal silyl and germyl compounds hypersilyl lithium, {(Me3Si)3Si}Li(THF)3 (1), supersilyl sodium, (tBu3Si)Na(THF)n (2, n = 2-3), and trimethylgermyl lithium, {Me3GeLi(THF)2}2 (3), were used for the synthesis of the silyl- and germyl-substituted boranes in this work. Compounds 1 and 2 were synthesized as previously reported, and compound 3 was isolated from the reaction of trimethylgermane with tert-butyl lithium. Compounds 2 and 3 were crystallographically characterized. Reaction of B(NMe2)Cl2 with 2 equiv of 1 afforded previously reported {(Me3Si)3Si}2B(NMe2) (4), whereas reactions of B(NMe2)Cl2 or {B(NMe2)F2}2 with excess 2 only afforded the monosilyl boranes (tBu3Si)B(NMe2)X {X = Cl (5) and F (6)}. Reaction of 5 with 0.5 equiv of {Me3GeLi(THF)2}2 (3) provided the first example of a mixed silyl/germyl-substituted borane, (tBu3Si)(Me3Ge)B(NMe2) (7). Attempts to synthesize (Me3Ge)2B(NMe2) from the 1:1 reaction of B(NMe2)Cl2 with {Me3GeLi(THF)2}2 afforded a mixture of two major products, one of which was identified as the tri(germyl)(amido)borate {(Me3Ge)3B(NMe2)}Li(THF)2 (8); compound 8 was isolated from the 1:1.5 reaction. Reaction of more sterically encumbered B(TMP)Cl2 with 1 equiv of {Me3GeLi(THF)2}2 afforded the di(germyl)(amido)borane (Me3Ge)2B(TMP) (9). Boranes 4, 7, and 9 and borate 8 were crystallographically characterized. The thermal stability and volatility of boranes 4, 7, and 9 was evaluated, the solution reactivity of 4 and 7 with boron trihalides was assessed, and ALD was attempted using 4 in combination with BCl3 and BBr3 at 150 and 300 °C.

Complexes of a Frustrated Lewis Pair-Supported P(-1) Ligand.

Several complexes of the intramolecular frustrated Lewis pair (FLP)-supported P(-1) ligand [iPr2P(C6H4)BCy2{P}]- are presented (Cy=cyclohexyl). Chief among these is the first example of a monomeric zinc bis(phosphido) complex, which was synthesized as a potential precursor for the solution-phase deposition of Zn3P2. While this goal was ultimately unsuccessful, the Zn(II) complex acts as a convenient springboard to other metal phosphide species via transmetallation: affording a tellurium bis(phosphido) complex and a formal adduct of the phosphorus subhalide PPCl2. Trapping experiments show that the PPCl2 adduct can also be prepared directly through the in situ reduction of PCl3 in the presence of an intramolecular FLP ligand. Lastly, we report a formal η2-phosphaborene complex of cobalt(-1) which is isoelectronic to olefin complexes, and explore its bonding via density functional theory (DFT) computations.

Solvent-vapor-assisted crystallization of covalent organic framework films for CO2/CH4 separation

Abstract Covalent organic framework (COF) films were prepared using alternating vapor deposition of precursors followed by solvent vapor annealing. When an as-deposited film was annealed in appropriate solvent vapors, the prepared COF film exhibited an “onion-like” structure. This result opens a way to synthesize COF films with highly ordered planar layers through the interaction between layers. The CO2/CH4 separation performance of COF film was significantly improved due to the decrease in defects caused by crystallization.

Deposition of nanocomposite carbon-based thin films doped with copper and fluorine

This paper is focused on plasma-enhanced chemical vapor deposition (PECVD) of novel carbon-based thin films. Unique thin films were deposited from a mixture of methane, hydrogen, and a precursor containing fluorine and copper: (hfac)copperVTMS (hfac = hexafluoroacetylacetonato and VTMS = vinyltrimethylsilane). Using the (hfac)copperVTMS precursor in PECVD deposition results in the advantageous chemical composition of carbon-based thin films while maintaining sufficient mechanical properties. Furthermore, with optimized plasma parameters, the films deposited on the substrate exhibit a nanocomposite structure. This nanostructured surface can increase the surface area, which is beneficial for various applications, including antibacterial and antiviral properties. The radiofrequency glow discharge at low pressure (≈70Pa) and power P=25W and P=250W was used for deposition. Deposited thin films were analyzed using X-ray photoelectron spectroscopy, water contact angle measurement, atomic force microscopy, and nanoindentation techniques. Despite the doping of carbon-based thin films with soft copper, the prepared films exhibited sufficient mechanical properties, which are crucial for the future implementation of this deposition process.

Molecular Transformations for Direct Synthesis of Thorium Dioxide Films

New Th(IV) complexes with high volatility were synthesized and applied as molecular single‐source precursors for chemical vapor deposition (CVD) of ThO2 thin films. The change in the steric profile of alkoxide ligands and concomitant reduction in the molecular weight of [Th(L)2(OR)2] (1‐OR, R = iso‐propyl (1‐OiPr) or tert‐butyl (1‐OtBu), L = N‐(4,4,4‐trifluorobut‐1‐ene‐3‐one)‐methoxyethylamide)) had a profound effect on the vapor pressure (at 10‐5 mbar) evident in the drop in sublimation temperature to 100 °C for the iso‐propoxide derivative against 130 °C observed for the tert‐(1‐OtBu). Hirshfeld surface analysis of both complexes showed different degrees of intermolecular H⋅⋅⋅F interactions responsible for the observed differences in the volatilities of the two complexes. Both mixed‐ligand compounds (1‐OiPr, 1‐OtBu) were applied in the CVD process to deposit thorium oxide thin films without any carrier or reactive gas that verified their suitability as single‐source precursors to ThO2 coatings. Thin films of ThO2 were grown at 500 °C and 600 °C on Si/SiO2 substrates, which showed presence of C, N, and F presumably originating from the incorporation of ligand fragments in the growing CVD deposits. Subsequent calcination of CVD‐grown ThO2 films at 800 °C in air led to phase pure ThO2 coatings with uniform morphology.

Selective Synthesis of 3D Aligned VO2 and V2O5 Carbon Nanotube Hybrid Materials by Chemical Vapor Deposition.

3D carbon nanotube hybrid materials containing VO2 and V2O5 evenly distributed onto vertically aligned carbon nanotubes (VACNTs) is reported. Adjustable loading of particles in controllable sizes onto the VACNTs was developed via a stepwise chemical vapour deposition (CVD) approach. Solid VO(acac)2 is chosen as vanadium source. CO2 acts as reactive gas for the pre-functionalisation of the VACNTs. The process temperature was identified as key parameter to control the deposited vanadium oxide phase. A temperature of 550°C results in monoclinic VO2, while 600 °C results in the deposition of V2O5 onto the VACNT support. The morphology and the amount of deposited material was found to be dependent on the reactor dimensions and the degree of functionalization of the carbon support. An increase of the D/G ratio of the VACNT from 0.75 to 1.08 caused by a CO2 treatment step within the process led to an increase of the particle coverage from a scarce coverage without prior CO2 treatment to a dense coverage of the VACNT support after 15 min of CO2 exposure time. Size and crystallinity of the as deposited particles can be further adjusted by a controlled heat treatment after VO(acac)2 precursor deposition.

Surface engineering of CuO-Cu2O heterojunction thin films for improved photoelectrochemical water splitting

The efficient production of green hydrogen poses a significant challenge that requires the development of active, low-cost, and stable catalysts. Copper oxide has emerged as a highly effective photocatalyst for water splitting, offering the advantages of being nontoxic, abundant, and inexpensive. Nonetheless, the photoelectrochemical water splitting (PEC) process can be enhanced through surface modification. In this study, we utilized single-source precursors for aerosol-assisted chemical vapor deposition (AACVD) in order to deposit thin films of copper oxide (CuO-Cu2O) heterojunctions onto a substrate composed of fluorine-doped tin oxide (FTO). The chosen precursor for this purpose was copper (II) nitrate hemi(pentahydrate). To further optimize the CuO-Cu2O films, a novel acid treatment involving the addition of varying quantities of acetic acid (AA) to the precursor solution was employed. Remarkably, this acid treatment resulted in a significant improvement in the photocurrent density of the CuO-Cu2O heterojunction. Notably, a 3 mL acid-treated CuO-Cu2O thin film exhibited an impressive photocurrent measure of −6.8 mA/cm2 at 0.0 V vs RHE in 0.5 M Na2SO4 electrolyte, compared to the performance of the untreated CuO-Cu2O thin film (−2.8 mA/cm2 at 0.0 V vs RHE). This catalyst demonstrated stability and a threefold increase in hydrogen production performance. The increase in photocurrent densities is closely linked to the influence of AA on two key factors: particle growth and structural defects, such as oxygen vacancies. This relationship has been confirmed through the examination of SEM, AFM, and PL spectra results. The findings of this study not only offer a novel approach to catalyst design but also propose a practical method for photoelectrochemical water splitting. This method holds great promise for achieving sustainable and renewable energy sources, as well as efficient green hydrogen production.

Chemically Tailored Growth of 2D Semiconductors via Hybrid Metal-Organic Chemical Vapor Deposition.

Two-dimensional (2D) semiconducting transition-metal dichalcogenides (TMDCs) are an exciting platform for excitonic physics and next-generation electronics, creating a strong demand to understand their growth, doping, and heterostructures. Despite significant progress in solid-source (SS-) and metal-organic chemical vapor deposition (MOCVD), further optimization is necessary to grow highly crystalline 2D TMDCs with controlled doping. Here, we report a hybrid MOCVD growth method that combines liquid-phase metal precursor deposition and vapor-phase organo-chalcogen delivery to leverage the advantages of both MOCVD and SS-CVD. Using our hybrid approach, we demonstrate WS2 growth with tunable morphologies─from separated single-crystal domains to continuous monolayer films─on a variety of substrates, including sapphire, SiO2, and Au. These WS2 films exhibit narrow neutral exciton photoluminescence line widths down to 27-28 meV and room-temperature mobility up to 34-36 cm2 V-1 s-1. Through simple modifications to the liquid precursor composition, we demonstrate the growth of V-doped WS2, MoxW1-xS2 alloys, and in-plane WS2-MoS2 heterostructures. This work presents an efficient approach for addressing a variety of TMDC synthesis needs on a laboratory scale.

Multiscale Modeling Approach to Understand Mechanism of Deposit Control by Sulfonate-Based Lubricant Detergents.

Protecting the material surfaces from deposits and insoluble sludge particles extends the engine life and reduces waste. Lubricant detergents in engine oils are essential additive technologies that prevent deposit formation in internal combustion engines. In this study, the effect of sulfonate detergent on deposit formation in a passenger car engine is investigated with experimental and multiscale molecular modeling methods to present a unified approach. First principles density-functional theory calculations, statistical sampling methods, all-atom molecular dynamics simulations, and coarse-grained simulations are examined to elucidate deposit control mechanism of sulfonate detergents. Analysis of the results reveals that sludge particles in the drain oil are similar in structure to piston deposits, and they might be the precursors of the piston deposits. Main factor for controlling the sludge particle deposition is the prevention of their colloidal aggregation at the microscale in the base oil matrix. Aggregation can be mitigated by the intercalation of detergent polar groups between the particles. This is followed by the extension of hydrophobic tails into the oil phase, which decreases further aggregation via formation of a repulsive layer.

Single-Atom Catalysts in Conductive Metal-Organic Frameworks: Enabling Reversible Gas Sensing at Room Temperature.

Conductive metal-organic frameworks (cMOFs) offer high porosity and electrical conductivity simultaneously, making them ideal for application in chemiresistive sensors. Recently, incorporating foreign elements such as catalytic nanoparticles into cMOFs has become a typical strategy to enhance their sensing properties. However, this approach has led to critical challenges, such as pore blockage that impedes gas diffusion, as well as limited improvement in reversibility. Herein, single-atom catalyst (SAC)-functionalized cMOF is presented as a robust solution to the current limitations. Facile functionalization of SACs in a cMOF can be achieved through electrochemical deposition of metal precursors. As a proof of concept, a Pd SAC-functionalized cMOF is synthesized. The Pd SACs are stabilized at the interplanar sites of cMOF with Pd-N4 coordination while preserving the porosity of the MOF matrix. Notably, the microenvironment created by Pd SACs prevents irreversible structural distortion of cMOFs and facilitates a reversible charge transfer with NO2. Consequently, the cMOF exhibits a fully recoverable NO2 response, which was not previously attainable with the nanoparticle functionalization. Additionally, with the combination of preserved porosity for gas diffusion, it demonstrates the fastest level of response and recovery speed compared to other 2D-cMOFs of this class.

Synthesis, characterization, volatility, and thermal stability of fluorinated copper(II) aminoalkoxide complexes as potential vapour deposition precursors

The sodium aminoalkoxides Na[OCR(CF3)CH2NMeR′] {R = H, R′ = Me (1a); R = R′ = Me (1b); R = CF3, R′ = Me (1c); R = Me, R′ = Et (1d); R = CF3, R′ = Et (1e)} were synthesized by reaction of the corresponding fluorinated epoxide {OCH2CR(CF3); R = H (A), Me (B), CF3 (C)} with a secondary amine (HNMe2 or HNMeEt), followed by deprotonation with sodium hydride. Compounds 1a–e were isolated as white powders and characterized by combustion elemental analysis and NMR spectroscopy. Epoxides A and C are commercially available, while epoxide B was prepared by in situ deprotonation and alkylation of A. Reactions of 1a–e with copper(II) chloride in THF afforded [Cu{OCR(CF3)CH2NMeR′}2] {R = H, R′ = Me (2a); R = R′ = Me (2b); R = CF3, R′ = Me (2c); R = Me, R′ = Et (2d); R = CF3, R′ = Et (2e)}; compounds 2b and 2c have previously been reported but not structurally characterized, while 2a, 2d, and 2e are new to this report. All copper(II) compounds were characterized by combustion elemental analysis and single crystal X-ray crystallography. The physical properties of 2a–e were also evaluated using thermogravimetric analysis, melting point, and sublimation (at 5 mTorr) data, with comparison to previously reported non-fluorinated [Cu{OCHMeCH2NMe2}2] (III; [Cu(dmap)2]).

Many-Body MYP2 Force-Field: Toward the Crystal Growth Modeling of Hybrid Perovskites.

Hybrid perovskites are well-known for their optoelectronic and photovoltaic properties. Molecular dynamics simulations allow the study of these soft and ionic crystals by including dynamical effects (e.g., molecular rotations, octahedra tilting, ionic diffusion and hysteresis), yet the high computational cost restricts the use of accurate ab initio forces for bulk or small atomic systems. Hence, great interest exists in the development of classical force-fields for hybrid perovskites of low and linear scaling computational cost, via both empirical methods and machine-learning. This work aims at extending the transferability of our MYP0 model, which has been successfully tailored to methylammonium lead iodide (MAPI) and applied to the study of molecular rotations, vibrations, diffusion of defects, and many other properties. The extended model, named MYP2, improves the description of inorganic or hybrid fragments and the processes of crystal formation while preserving a good description of bulk properties. More importantly, it allows for the direct simulation of the crystal growth of cubic MAPI from deposition of PbI and MAI precursors on the surfaces. Our findings pave the way toward classical force-fields able to model the microstructure evolution of hybrid perovskites and the crystalline synthesis from deposition in vacuo.

Synthesis, Characterization, and Thermal Properties of Liquid Iron Amidinates and Their Potential as Chemical Vapor Deposition Precursors for Producing Iron-Containing Films

Synthesis, Characterization, and Thermal Properties of Liquid Iron Amidinates and Their Potential as Chemical Vapor Deposition Precursors for Producing Iron-Containing Films

Ab Initio Prediction of Vapor Pressure for Diverse Atomic Layer Deposition Precursors.

Understanding the saturated vapor pressure (Pvap) is vital for evaluating atomic layer deposition (ALD) precursors, as it directly influences the ALD temperature window and, by extension, the processability of compounds. The early estimation of vapor pressure ranges is crucial during the initial stages of novel precursor design, reducing the reliance on empirical synthesis or experimentation. However, predicting vapor pressure through computer simulations is often impeded by the scarcity of suitable empirical force fields for molecular dynamics simulations. This challenge is further compounded by the diverse chemical substances and the introduction of new elements into modern ALD processes, necessitating robust force fields that can accommodate metals, organics, and halides. In response, this study introduces a novel approach utilizing a quantum mechanically derived force field for the prediction of vapor pressure across a wide spectrum of potential ALD precursors. This approach enables the creation of system-specific force fields through parametrization based on ab initio calculations for a single molecule. We develop a comprehensive workflow to simulate both liquid and gaseous equilibrium phases, allowing the calculation of vapor pressure across a wide temperature range. Our methodology has been validated with a diverse set of ALD precursors, demonstrating its robustness in predicting Pvap at specified temperatures. The approach yields a Pearson's correlation coefficient (R2) greater than 0.9 on a logarithmic scale and a root-mean-squared deviation in self-solvation-free energies as low as 1.3 kcal mol-1. This innovative workflow, which does not require any prior experimental data, marks a significant advancement in the computer-aided design of novel ALD precursors, paving the way for accelerating developments in technology.

Impact of deposition parameters on the optical properties of Fe2O3 thin films prepared by SILAR method

In order to explore the structures, morphology, and optical features of Fe2O3 nanofilms, the successive ionic layer adsorption and reactions (SILARs) technique was utilized to deposit the nanofilms onto glassy slides at varying concentrations of the precursor. Three precursor concentrations (0.025, 0.05 and 0.075) M were used. Analysis using X-ray diffraction (XRD) presented the crystalline structure of the Fe2O3 thin films. Field emission-scanning electron microscopy (FE-SEM) was used to evaluate the morphological features of the films. The results demonstrate that the surfaces of the films are nonporous and that there is a good distribution for spherical nanosize particles. The number of cycles is another important parameter that has been tested and its effect on the optical properties of prepared films was evaluated. The optical properties like optical absorption and energy gaps are affected directionally by changing the concentration and cycle numbers during the preparation. The latest objective of our study is to determine the role of precursor concentrations and deposition cycles in preparing thin films that have electronic applications such as sensors and solar cells.