ABSTRACT Molybdenum disulfide (MoS2), a promising two-dimensional material, has attracted significant attention due to its unique electronic and thermal properties, making it a potential thermoelectric material Extensive research is underway to improve the thermoelectric properties of MoS2 by enhancing the figure of merit (ZT). However, there is currently limited research on the effects of thickness and temperature on the thermoelectric properties of MoS2 films prepared by magnetron sputtering. In this paper, amorphous MoS2 films with different thicknesses were first deposited using magnetron sputtering, ranging from 43nm to 231nm. The Frequency Domain Thermoreflectance (FDTR) system was established to measure the thermal conductivity of MoS2 film. The experimental results indicate a thermal conductivity range of 0.49 to 0.53W/m·K, with thickness showing minimal impact. The thermal boundary conductance between the sputter-deposited MoS2 film and the SiO2 substrate is measured at 12±5MW/m2 ·K. The electrical conductivity and Seebeck coefficient were measured in the temperature range of 300 K to 450 K using LSR-3 equipment. The results indicate that the MoS2 films prepared in this study were all p-type semiconductors, with electrical properties increasing with temperature. Within the temperature range of 300–430 K, the power factor of all films increases with the rise in temperature, reaching a maximum value of 0.36 µW/cm·K2
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