High-frequency and low-frequency noise (LFN) performance of GaN high electron-mobility transistors (HEMTs), passivated with SiN x deposited by either $in~situ$ or low-pressure-chemical-vapor-deposition (LPCVD), are compared. From 8–26 GHz, the LPCVD sample has a lower minimum noise figure (1 dB at 8 GHz) because of lower power spectral density of noise sources and less transconductance ( $g_{m})$ dispersion. The LPCVD and the $in~situ$ SiN x passivated HEMTs exhibit similar LFN in the 1 Hz–100 kHz range (drain current noise spectra $\sim 10^{-17}~\text{A}^{2}$ /Hz at 100 kHz). Nevertheless, LPCVD should be a preferred choice for voltage-controlled oscillator (VCO) applications, since it is capable of suppressing current collapse more effectively, which results in a higher output power and, therefore, a lower phase noise. Furthermore, the low current collapse, low LFN, and minimum noise figure makes the LPCVD SiN x passivation a promising candidate for multifunctional monolithic microwave integrated circuits, including power amplifiers, low-noise amplifier, switches, mixers, and VCOs.
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