Power Electronics Research Articles

Stretching Aligned Hydrogen Bonding Network to Evoke Mechanically Robust and High-Energy-Density P(VDF-HFP) Dielectric Film Capacitors.

Polymer-based dielectric film capacitors are essential energy storage components in electronic and power systems due to their ultrahigh power density and ultra-fast charge storage/release capability. Nonetheless, their relatively low energy density does not fully meet the requirements of power electronics and pulsed power systems. Herein, a scalable composite dielectric film based on a ferroelectric polymer with edge hydroxylated boron nitride nanosheets (BNNS-OH) is fabricated via the construction of a hydrogen bonding network and stretching orientation strategy. The presence of hydroxyl groups on boron nitride aids in forming a robust hydrogen bonding network within the ferroelectric polymer, leading to a significant increase in Young's modulus and superior dielectric performance. Furthermore, the stretching process aligns the BNNS-OH and the hydrogen bonding network along the drawing direction via covalent and hydrogen bonding interaction, resulting in a remarkable tensile strength (109MPa), breakdown strength (688 MVm-1), and energy density (28.2 Jcm-3), outperformingmostrepresentative polymer-based dielectric films. In combining the advantages of a simple preparation process, extraordinary energy storage performance, and low-cost raw materials, this strategy is viable for large-scale production of polymer-based dielectric films with high mechanical and dielectric performance and opens a new path for the development of next-generation energy storage applications.

Silicon Carbide Microring Resonators for Integrated Nonlinear and Quantum Photonics Based on Optical Nonlinearities

Silicon carbide (SiC) electronics has seen a rapid development in industry over the last two decades due to its capabilities in handling high powers and high temperatures while offering a high saturated carrier mobility for power electronics applications. With the increased capacity in producing large-size, single-crystalline SiC wafers, it has recently been attracting attention from academia and industry to exploit SiC for integrated photonics owing to its large bandgap energy, wide transparent window, and moderate second-order optical nonlinearity, which is absent in other centrosymmetric silicon-based material platforms. SiC with various polytypes exhibiting second- and third-order optical nonlinearities are promising for implementing nonlinear and quantum light sources in photonic integrated circuits. By optimizing the fabrication processes of the silicon carbide-on-insulator platforms, researchers have exploited the resulting high-quality-factor microring resonators for various nonlinear frequency conversions and spontaneous parametric down-conversion in photonic integrated circuits. In this paper, we review the fundamentals and applications of SiC-based microring resonators, including the material and optical properties, the device design for nonlinear and quantum light sources, the device fabrication processes, and nascent applications in integrated nonlinear and quantum photonics.

Study of performance evaluation of various characteristics of a single phase full bridge inverter circuit using surrounded channel junctionless field effect transistor

This paper reports the characteristics study of a single phase full bridge power electronic inverter circuit with a new type of technology namely surrounded channel junctionless field effect transistor (SCJLFET) as a switch. The inverter circuit has been designed using mixed mode simulation platform of TCAD device simulator. The transient characteristics for various temperatures and work functions have been analysed. In the steady state analysis the output current and voltage variation with input voltage with various temperatures and work functions have been studied. The power factor variations with gate oxide thickness and dielectric constant of gate dielectric. The simulation and designing process along with pros and cons have been characterized. The SCJLFET would be one of the strongest participants for advanced power electronics technology as a switches, with various virtues of high-speed operation, low power consumption and low budget process integration. It has also been found that single phase full bridge inverter is giving best results when made using SCJLFET.

The electronic stopping power of self-irradiated molybdenum in different charge states

Molybdenum is not only an excellent photovoltaic material but also a crucial component in semiconductors. However, its high bandgap restricts its application in optoelectronic devices. This limitation arises primarily because the energy barrier between photogenerated electron-hole pairs cannot be directly overcome by sunlight. Self-irradiation can overcome these barriers, allowing efficient separation of photogenerated electrons and holes, making molybdenum an excellent light-absorbing material. By altering the charge state of molybdenum-based materials, their light absorption can be adjusted. This project aims to systematically study the optical properties and electronic stopping power of molybdenum-based materials in different charge states through theoretical calculations and experiments.

ResFaultyMan: An intelligent fault detection predictive model in power electronics systems using unsupervised learning isolation forest

Intelligent fault detection considered as a paramount importance in Power Electronics Systems (PELS) to ensure operational reliability along with rising complexities and critical application demands. However, most of the developed methods in real-world scenarios can have better detection, and accurate diagnosis. In this regard, ResFaultyMan, a novel unsupervised isolation forest-based model, is presented in this paper, for real-world fault/anomaly detection in PELS. Capitalizing on the dynamics of faults, ResFaultyMan utilizes a tree-based structure for effective anomaly isolation, demonstrating adaptability to diverse fault scenarios. The test bench, comprising a load, Triac switch, resistor, voltage source, and Pyboard microcontroller, provides a dynamic setting for performance evaluation. The integration of a Pyboard microcontroller and a Python-to-Python interface facilitates fast data transfer and sampling, enhancing the efficiency of ResFaultyMan in real-time fault detection scenarios. Comparative analysis with OneClassSVM and LocalOutlierFactor, utilizing Key Performance Indicators (KPIs) of Accuracy, Precision, and Recall, as well as F1 Score, manifest ResFaultyMan's fault detection capabilities for fault detection in PELSs, and its performance in the related applications.

Design and testing of a high power piezo pump for hydraulic actuation

Traditional valve-controlled hydraulic cylinders are usually very inefficient due to power loss through the control valve. An efficient alternative architecture is to distribute power electrically rather than hydraulically to a group of cylinders and drive each cylinder via individual servomotor-driven pumps. This arrangement is called electrohydrostatic actuation. Such actuators are currently available for power ratings of several hundred watts or greater, but not in the sub-100 W range. This paper details the design, simulation and testing of a piezopump which is intended to address this gap. The motivation is for aerospace applications, and in particular accessory actuators used in the landing gear system. The 10–100 W range is a high-power output for a piezopump, and to achieve this a novel design using disc-style reed valves was developed to allow pumping frequencies above 1 kHz. These high frequencies necessitated the development of custom power electronics capable of delivering 950 V peak-peak sine wave excitation to a largely capacitive load. Experimental results show that the piezopump is capable of delivering over 30 W of hydraulic power, and at no-load can deliver up to 2 L/min of flow at 1250 Hz. Future development includes a transition to multi-cylinder pumps, and improved reed-valve modelling to improve the accuracy of simulated performance.

A novel approach for improving the magnetic properties and reducing the power loss of FeSi3.5 composite at 200–500 kHz band

The easy-plane FeSi3.5 composite with excellent magnetic properties and power loss is proposed. The magnetic properties and power loss of the easy-plane FeSi3.5 composite are studied by using the none easy-plane FeSi3.5 composite as a control. This easy-plane FeSi3.5 composite has an initial permeability of 62, resonance frequencies of 100 MHz and 1.5 GHz, and frequency stability of 40 MHz. In addition, the easy-plane FeSi3.5 composite has also excellent loss properties, with a high-frequency power loss of only 108.12 kW/m3. The three kinds of power loss of the easy-plane FeSi3.5 composite are reduced compared with the none easy-plane FeSi3.5 composite through loss separation, especially the eddy current loss and the excess loss. The eddy current loss and the excess loss of the easy-plane FeSi3.5 composite are only 0.03 and 12.93 kW/m3 at 500 kHz, which reduce by 99.44% and 92% compared with the none easy-plane FeSi3.5 composite. Effective reduction of power loss and significant improvement of magnetic properties are important for solving the problem of power loss encountered by power electronic devices at the kHz band. Therefore, the application of the easy-plane FeSi3.5 composite with excellent power loss and high-frequency magnetic properties becomes a novel approach to meet the practical application of power electronics. The method that increases the working frequency and decreases the maximum magnetic flux density keeping the energy transformation efficiency constant is a new method to reduce power loss at the wide frequency band.

Design optimization of wide-gate swing E-mode GaN HEMTs with junction barrier Schottky gate

To increase the gate swing, a GaN-based high-electron-mobility transistor with a junction barrier Schottky gate (JBS-HEMT) was proposed. Compared to conventional p-GaN Schottky gate HEMTs (Conv-HEMT), the high electric field at the surface is transferred to the pn junction inside the body, and the extended depletion region of the pn junction shields the surface Schottky contact interface for the JBS-HEMT. After fitting the model to the reported device, the proposed JBS-HEMT was simulated and optimized using the Sentaurus TCAD tool. The simulation results of the optimized JBS-HEMT demonstrate a high gate breakdown voltage (17.6 V), which is 158.5% higher than the gate breakdown voltage of the Conv-HEMT (11.1 V) and a lower gate leakage current of six orders of magnitude than the Conv-HEMT at the gate-to-source voltage of 10 V. The proposed JBS-HEMT exhibits a positive threshold voltage (1.68 V) and excellent threshold voltage stability, and the maximum threshold voltage drift of the JBS-HEMT (+0.237 V) is smaller than that of the Conv-HEMT (−0.714 V) under gate stress conditions. The peak transconductance of the JBS-HEMT (186 mS mm−1) at athe drain-to-source voltage of 10 V showed almost no reduction compared to the Conv-HEMT (189 mS mm−1), which solves the problem of decreased transconductance capability of the reported GaN HEMT with a p-n junction gate (PNJ-HEMT). It was confirmed that the JBS-HEMT has excellent gate stability and potential for power electronics applications.

Adaptive Fast Integral Terminal Sliding Mode Control Strategy Based on Four-Switch Buck–Boost Converters

With the rapid development of electronic power systems, DC-DC converters are widely used, including the Four-Switch Buck–Boost (FSBB) converter, which has a unique advantage in scenarios with a wide range of voltage inputs. To improve the response speed and anti-interference capability of the FSBB converter, this paper proposes an adaptive global fast integral terminal sliding mode control method. Through an in-depth analysis of the fundamental characteristics of the FSBB converter, this study employed a global fast integral terminal sliding mode controller combined with an adaptive algorithm to significantly improve the dynamic performance and robustness of the FSBB converter. The simulation and experimental results show that the proposed method could track the reference voltage quickly and accurately in different modes, exhibiting excellent system robustness compared to conventional sliding mode control, terminal sliding mode control, and PID control methods.

Quantization Conductance of InSb Quantum-Well Two-Dimensional Electron Gas Using Novel Spilt Gate Structures

Electron transport behaviour in InSb semiconductor significantly changes when the conduction is restricted to two-dimensions. Semiconductor materials are an effective tools to characterize the electron transport in this aspect because the energy separation between transverse modes in a low-dimensional semiconductor device are always inversely proportional to the effective mass, in the same way as for sub-bands in a parabolic potential. Therefore, in this article, a range of novel device geometries were designed, fabricated and characterized to investigate ballistic transport of electrons in low-dimensional InSb structures using surface gated devices to restrict the degrees of freedom (dimensionality) of the active conducting channel. In this framework, designs of gates (i.e., line, loop and solid discussed later) have been used over a range of gate dimensions. Consistent measurement of quantised conductance would be promising for both low power electronics and low temperature transport physics where split gates are typically used for charge sensing. This article presents an experimental results of quantization conductance obtained for the range geometries of novel gates, and some model consideration of the implications of the material choice. Furthermore, the etching techniques (wet and dry) exhibited a significant decrease of ohmic contact resistance from around 35kΩ to only roughly 250Ω at room temperature. Interestingly a possible 0.7 anomaly conduction was observed with a loop gate structure. This work showed perfectly that the two-dimensional electron gases can be formed in narrow gap InSb QWs which makes this configuration device promising candidate for topological quantum computing and next generation integrated circuit applications. Keywords: Quantization conductance, InSb QW, 2DEG, spilt gate structure, ballistic transport.

Ultra-strong bonding of 30-wt% GF/PET-A2024 aluminium alloy via collaborative promotion of ultrasonic-assisted FeCl3+N2H4 corrosion and the coordination bonds by Zr4+

Enhancing the bonding strength between metals and polymers is advantageous for hybrid structures used in aerospace and power electronics applications. This study, conducted for the first time, involves the preparation of multi-scale “honeycomb-meteorite crater” morphologies on the surface of A2024 aluminium alloy through a multi-step ultrasonic-assisted corrosion treatment. The ultrasonic-assisted FeCl3/N2H4 corrosion process increased the interfacial tensile shear strength of a 30-wt% glass fibre reinforced PET-A2024 aluminium alloy joint (expressed as 30-wt% GF/PET-A2024) to 32.0 MPa. Coating Zr4+ substantially enhances the hydrophilicity of the A2024 surface; however, the coordination bonding effect of Zr4+ can only be activated after prolonged heat treatment (100 °C, 3 h). With the combined effects of multi-scale mechanical interlocking and coordination bonding of Zr4+, the tensile shear strength of the 30-wt% GF/PET-A2024 joint can reach 56.5 MPa, surpassing existing works by a significant margin. Experimental results and Density Functional Theory (DFT) calculations demonstrate that the optimal concentration for Zr4+ treatment is 1.5 wt%. Excessive Zr4+ would lead to ion-dipole interactions, which diminish the interface bonding strength; when the concentration of Zr4+ is 2 wt%, The joint strength dropped sharply to 39.1 MPa. This study provides a comprehensive discussion on ultrasonic-assisted corrosion and the effect of Zr4+, offering valuable insights for future research aimed at enhancing the interfacial bonding strength between polymers and metals.

Boron Nitride Modified Superhydrophobic Anti‐Icing Coating for Electrical Equipment Protection

AbstractAnti‐icing of superhydrophobic materials has attracted a lot of attention. The potential for applications in power electronics, transportation, engineering and other fields is enormous. However, in practical applications, the anti‐icing performance parameters of superhydrophobic materials are still far from meeting the engineering requirements. It is a feasible solution to modify superhydrophobic materials to assist surface deicing by combining the vibration and heat generated by equipment in actual engineering. In this study, conventional superhydrophobic materials are modified by h‐BN. The electrical properties are improved to meet the engineering requirements. At the same time, it reduces the ice adhesion at the interface and improves the thermal conductivity of the material. The modified material has the possibility of assisting in de‐icing in engineering applications. A feasible solution is found for the engineering interface ice‐covering problem.

Reduced trap state density in AlGaN/GaN HEMTs with low-temperature CVD-grown BN gate dielectric

In this Letter, low-temperature (400 °C) chemical vapor deposition-grown boron nitride (BN) was investigated as the gate dielectric for AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) on a Si substrate. Comprehensive characterizations using x-ray photoelectron spectroscopy, reflection electron energy loss spectroscopy, atomic force microscope, high-resolution transmission electron microscopy, and time-of-flight secondary ion mass spectrometry were conducted to analyze the deposited BN dielectric. Compared with conventional Schottky-gate HEMTs, the MISHEMTs exhibited significantly enhanced performance with 3 orders of magnitude lower reverse gate leakage current, a lower off-state current of 1 × 10−7 mA/mm, a higher on/off current ratio of 108, and lower on-resistance of 5.40 Ω mm. The frequency-dependent conductance measurement was performed to analyze the BN/HEMT interface, unveiling a low interface trap state density (Dit) on the order of 5 × 1011–6 × 1011 cm−2 eV−1. This work shows the effectiveness of low-temperature BN dielectrics and their potential for advancing GaN MISHEMTs toward high-performance power and RF electronics applications.

Improved Energy Density at High Temperatures of FPE Dielectrics by Extreme Low Loading of CQDs.

Electrostatic capacitors, with the advantages of high-power density, fast charging-discharging, and outstanding cyclic stability, have become important energy storage devices for modern power electronics. However, the insulation performance of the dielectrics in capacitors will significantly deteriorate under the conditions of high temperatures and electric fields, resulting in limited capacitive performance. In this paper, we report a method to improve the high-temperature energy storage performance of a polymer dielectric for capacitors by incorporating an extremely low loading of 0.5 wt% carbon quantum dots (CQDs) into a fluorene polyester (FPE) polymer. CQDs possess a high electron affinity energy, enabling them to capture migrating carriers and exhibit a unique Coulomb-blocking effect to scatter electrons, thereby restricting electron migration. As a result, the breakdown strength and energy storage properties of the CQD/FPE nanocomposites are significantly enhanced. For instance, the energy density of 0.5 wt% CQD/FPE nanocomposites at room temperature, with an efficiency (η) exceeding 90%, reached 9.6 J/cm3. At the discharge energy density of 0.5 wt%, the CQD/FPE nanocomposites remained at 4.53 J/cm3 with an efficiency (η) exceeding 90% at 150 °C, which surpasses lots of reported results.

Significantly enhancing the through-plane thermal conductivity of epoxy dielectrics by constructing aramid nanofiber/boron nitride three-dimensional interconnected framework

Epoxy dielectrics with high through-plane thermal conductivity (λ) hold great promise for applications in the thermal management of advanced power electronics. Intensive attempts have been made to improve the λ of epoxy by filling with boron nitride nanosheets (BNNSs). However, it remains a great challenge to achieve a satisfactory increased λ by a small amount of BNNS loading. Herein, we reported a new strategy to prepare epoxy dielectrics with internal three-dimensional phonon transport channels by vacuum freeze-drying and vacuum impregnation. Aramid nanofibers (ANFs) and BNNSs were used for the collaborative construction of a vertical interconnected thermal framework. The resultant ANF-BNNS/epoxy achieved a high through-plane λ of 0.87 W m−1 K−1 at only 1.43 vol. % BNNS, which is ∼17.1% higher than that of the BNNS/epoxy counterpart with even 18.34 vol. % randomly distributed BNNS. The increasing efficiency of λ of epoxy by ANF-BNNS is tenfold more than that of the conventional blending methods. In addition, the ANF-BNNS/epoxy composite also exhibits a low dielectric constant and low dielectric loss. The findings of this study offer an inspired venue to develop high-performance thermally conductive epoxy dielectrics with a minimal BNNS loading.

High-throughput phase field simulation and machine learning for predicting the breakdown performance of all-organic composites

All-organic dielectric polymers are materials of choice for modern power electronics and high-density energy storage, and their performance can be significantly improved by doping trace amounts of organic molecular semiconductors with strong electron-affinity energy to suppress charge conduction losses. Insight into the breakdown mechanism of polymers/organic molecular semiconductor composites is essential for the design of high-performance dielectric polymers. This study investigates the impact of the doping concentration of organic molecular semiconductors, dielectric constants, and trap depths on the breakdown performance of dielectric polymers under high temperature and electric fields. A modified phase-field model, incorporating deep traps and carriers’ coulomb capture radius, has been developed to facilitate high-throughput simulations of electrical breakdown in polymer/organic molecular semiconductor composites. This work accurately predicted the breakdown strength of all-organic composites using high-throughput phase-field simulation data as input for machine learning, which provides crucial theoretical support for designing all-organic composite dielectric polymers for energy storage capacitors under extreme conditions.

Deployment and validation of a smart bed architecture for untethered patients with wireless biomonitoring stickers.

Conventional patient monitoring in healthcare has limitations such as delayed identification of deteriorating conditions, disruptions to patient routines, and discomfort due to extensive wiring for bed-bound patients. To address these, we have recently developed an innovative IoT-based healthcare system for real-time wireless patient monitoring. This system includes a flexible epidermal patch that collects vital signs using low power electronics and transmits the data to IoT nodes in hospital beds. The nodes connect to a smart gateway that aggregates the information and interfaces with the hospital information system (HIS), facilitating the exchange of electronic health records (EHR) and enhancing access to patient vital signs for healthcare professionals. Our study validates the proposed smart bed architecture in a clinical setting, assessing its ability to meet healthcare personnel needs, patient comfort, and data transmission reliability. Technical performance assessment involves analyzing key performance indicators for communication across various interfaces, including the wearable device and the smart box, and the link between the gateway and the HIS. Also, a comparative analysis is conducted on data from our architecture and traditional hospital equipment. Usability evaluation involves questionnaires completed by patients and healthcare professionals. Results demonstrate the robustness of the architecture proposed, exhibiting reliable and efficient information flow, while offering significant improvements in patient monitoring over conventional wired methods, including unrestricted mobility and improved comfort to enhance healthcare delivery.

Development and Application of Modern Intelligent Control Theory

Modern intelligent control theory has experienced multi-stage development from classical control to fuzzy control, neural networks, and model predictive control, which not only improves the flexibility and adaptability of control systems but also promotes interdisciplinary research. With the advancement of science and technology and social development, intelligent control theory will be further combined with machine learning, big data, and other fields in the future to promote industrial automation and technological innovation. This article reviews the development history of modern intelligent control theory, its main theories, and its applications in robot manufacturing, power electronics, and other fields. It also discusses the current challenges and future development trends in the field of intelligent control.

Cooling of 1 MW Electric Motors through Submerged Oil Impinging Jets for Aeronautical Applications

Electrification of aircraft is a very challenging task as the demand for energy and power is high. While the storage and generation of electrical energy are widely studied due to the limited specific energy and specific power of batteries and fuel cells, electric machines (power electronics and motors) which have years of experience in many industrial fields must be improved when applied to aviation: they generally have a high efficiency but the increase in power levels determines significant thermal loads which, unlike internal combustion engines (ICE), cannot be rejected with the exhaust. There is therefore a need for thermal management systems (TMSs) with the main objective of maintaining operating temperatures below the maximum level required by electric machines. Turboprop aircraft, such as the ATR 72 or the Dash 8-Q400, are commonly used for regional transport and are equipped with two gas turbine engines whose combined power is in the order of 4 MW. Electric and hybrid propulsion systems for these aircraft are being studied by several leading commercial aviation industries and start-ups, and the 1MW motor size seems to be the main option as it could be used in different aircraft configurations, particularly those that exploit distributed electric propulsion. With reference to the topics mentioned above, the present work presents the design of a TMS for a high-power motor/generator whose electrical architecture is known. Once integrated with the electrical part, the TMS must allow a weight/power ratio of 14 kW/kg (or 20 kW/kg at peak power) while maintaining the temperature below the limit temperature with reasonable safety margins. Submerged jet oil is the cooling technique here applied with a focus on diathermic oil. Parameters affecting cooling, like rotor speed and filling factor, are analysed with advanced CFD.

Variable Area Jet Impingement for Enhanced Junction Temperature Control of High-Power Electronics

Abstract Convective heat transfer by jet impingement cooling offers a suitable solution for high heat flux applications. Compared to techniques that rely on bulk conduction in series with convection, direct liquid impingement reduces the thermal resistance between power device hot spots and the coolant. Although capable of highly efficient cooling, static impingement devices must be designed for the worst-case cooling requirements for a transient power profile. This can result in wasted hydraulic performance. Aircraft, highway vehicles, and heavy machinery fall into this category where a substantial factor of safety is required. This work proposes a method for improving power electronics reliability by limiting temperature fluctuations at reduced coolant pressure requirements during transient power cycling using a variable area jet. Single phase jet impingement cooling is implemented in an active control scheme using a variable diameter iris mechanism as the primary nozzle architecture. In addition to pressure drop and temperature control, the active nozzle structure introduces the ability to create pulsating jet flows to further enhance the heat transfer compared to fixed-geometry nozzles. The key underlying fluid mechanics characteristic of pulsating flows is the effect of disrupting the thermal boundary layer on the electrical device surface. By introducing a variable diameter jet, eddy formation can be fine-tuned for optimal boundary layer disruption. Using the definition of the Strouhal number, vortex shedding created by the non-steady jet flows is directly correlated with the resulting Nusselt number as a function of the iris kinematics. An experimental apparatus for jet impingement thermal-fluid testing is used to evaluate the Nusselt number versus Strouhal number for a parametric study of variable diameter iris configurations. The apparatus utilizes a voice coil actuator to achieve sine and square waveforms, to vary the amplitude of actuation, and to vary the mean of actuation. Finally, power cycling with a single emulated hot spot is performed to estimate the reliability increase as a result of maintaining constant junction temperatures with the active jet impingement scheme.