Power Device Applications Research Articles

Research on Application of diamond MOSFET in DCDC converter

This paper focuses on the industrial application of diamond power devices and DCDC converters, carries out the application research of diamond MOSFET in DCDC converters, analyzes the limitations of current silicon-based DCDC converters and how diamond MOSFET should make up for this limitation. This paper summarizes the research on the practical application of diamond power devices at home and abroad and points out that there is a gap in the application of diamond MOSFETs in DCDC converters. Diamond has the advantages of a large band gap, high carrier mobility, high temperature and high pressure resistance, so the application of diamond MOSFET in a DCDC converter can improve its operating frequency, input and output voltage and efficiency. This paper also discusses the difficulties encountered by diamond semiconductor materials and diamond power devices in the research and industrial fields, as well as the research status of diamond semiconductor materials at home and abroad, and gives the research method for the future application of diamond MOSFET in DCDC converters. The study can use the analogy of applying SiC or GaN to DCDC converters improving their performance, and redesigning the drive circuit to match the limiting performance of diamond power devices. By applying diamond MOSFET into the DCDC converter, its operating voltage, operating frequency, output power and efficiency will be greatly improved.

Application of semiconductor power devices in electric vehicles

Application of semiconductor power devices in electric vehicles

Al-clad Cu bond wires for power electronics packaging: Microstructure evolution, mechanical performance, and molecular dynamics simulation of diffusion behaviors

With the advancement of power electronics, aluminum-clad copper thick bonding wires have garnered attentions due to superior electrical and thermal properties, making them well-suited for high-temperature and high-current applications. However, the impact remains unveiled of whether the growth of intermetallic compounds (IMCs) at the bonding interface presents critical challenges to the reliability of wedge wire bonds. Therefore, it is necessary to investigate the evolution behavior of Cu/Al IMCs in Al-clad copper wires. In this study, Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) were firstly employed to characterize the phase composition and growth behavior of Cu/Al intermetallic compounds (IMCs) at two distinct interfaces—the bonding interface and the core-shell interface—under various annealing conditions during high-temperature storage (HTS) tests, revealing a parabolic relationship between aging time and IMCs thickness. Subsequently, shear and pull tests of Al-clad copper bond wires were conducted to evaluate the bonding strength under different aging conditions, clarifying the correlation between various failure modes of the bonds and the evolution of IMCs at the bi-interfaces of this novel composite across different aging stages. Additionally, molecular dynamics (MD) simulations were employed to explore the diffusion behavior of Cu and Al atoms. It revealed that polycrystalline structures enhanced the mutual diffusion at the interface, with copper serving as the predominant element in the interdiffusion process. In conclusion, this study integrates experimental and numerical approaches to elucidate the growth mechanisms of Cu/Al intermetallic compounds and their effects on reliability, providing valuable guidance for optimizing the performance of composite bonding wires in high-temperature power device applications.

Epitaxial growth of GaN on β-Ga2O3 via RF plasma nitridation

The lack of suitable p-type dopant for β-Ga2O3 remains a hurdle for vertical power device applications. Epitaxy of GaN on Ga2O3 substrates was demonstrated as an alternative. (–201)-oriented β-Ga2O3 was converted into (0001)-oriented hexagonal GaN via nitrogen plasma in a plasma-assisted molecular beam epitaxy chamber, as verified by XRD and RHEED. The resulting nitridated GaN layers were characterized by TEM, x-ray reflectivity, and AFM to relate the nitridation conditions to crystallinity, layer thickness, and surface roughness. The crystallinity of subsequently grown epitaxial GaN films was quantified via XRD rocking curves and related to the nitridation layer properties across varying nitridation conditions. Specifically, the effect of the grain size and nitridation layer thickness was investigated to determine their role in threading screw dislocation management.

Polarized Light Observation for Visualization of Crystalline Defects in SiC Wafers for Power Device Applications

Polarized Light Observation for Visualization of Crystalline Defects in SiC Wafers for Power Device Applications

Oxygen-close-packed (310)-plane substrates of β-Ga2O3 grown by the casting method

The highly anisotropic crystal structure of β-Ga2O3 gives rise to a variety of crystal planes, among which the (310) plane is a potentially stable close-packed plane for the O sublattice. In this paper, we report the β-Ga2O3 single crystal and substrates with a (310) major plane grown by the spontaneous nucleation technique in the casting method. High-quality crystal growth and substrate processing were confirmed by the 25.67 arc sec full width at half maximum and the 0.25 nm surface roughness. The nanoindentation experiments revealed the (310) substrate's better elastic recovery than that of (100) substrate. The Young's modulus and hardness of (310) substrates were 200 and 7.6 GPa, respectively. The surface barrier height and the Schottky barrier height were 1.25 and 0.92 eV, respectively. First principles calculations identified the (310)-Ga-I plane as the most stable surface configuration of the (310) plane under oxygen-poor condition, with a surface energy density of 1.48 J/m2. The (310) twin boundary formation around the O sublattice has a high energy density of 0.55 J/m2, suggesting its unlikelihood of spontaneous formation. These properties of (310) plane facilitate a high-quality crystal processing and epitaxial growth, thus endowing potential applications in high-quality power devices. Furthermore, the growth and fabrication of the (310) plane provide a route toward understanding the properties of β-Ga2O3 and advancing the growth techniques of oxide crystals.

Performance and Threshold Voltage Reliability of Quaternary InAlGaN/GaN MIS-HEMT on Si for Power Device Applications

Performance and Threshold Voltage Reliability of Quaternary InAlGaN/GaN MIS-HEMT on Si for Power Device Applications

Resistivity as a Witness of Local Crystal Growth Conditions

A detailed knowledge of the growth front geometry during physical vapor transport (PVT) growth of SiC single crystals is beneficial to achieve high quality n+ SiC substrates for power device applications. In this report we show how mapping of resistivity in SiC wafers can shed light on local growth conditions, which are very difficult-to-study in situ. We consider both thermodynamic quantities (absolute temperature T and partial pressure pN₂) and geometric characteristics of the growth surface relevant to growth kinetic parameters, namely atomic terrace width and atomic step velocity. Specifically, we show how an elevation map of the growth surface can be reconstructed from a spatially-resolved measurement of resistivity in a SiC wafer by integrating the spatial derivative of elevation with respect to the basal plane, which is assumed to be related to local resistivity through dependence of non-equilibrium nitrogen incorporation on the atomic step velocity.

Design and evaluation of β-Ga2O3 junction barrier schottky diode with p-GaN heterojunction

A novel design for a junction barrier Schottky (JBS) diode based on a p-GaN/n-Ga2O3 heterojunction is proposed, exhibiting superior static characteristics and a higher breakdown capability compared to the traditional Ga2O3 Schottky barrier diode (SBD). By utilizing wide-bandgap p-type GaN, the β-Ga2O3 JBS diodes demonstrate a turn-on voltage (V on ) of approximately 0.8 V. Moreover, a breakdown voltage (V br ) of 880 V and a specific on-resistance (R on,sp ) of 3.96 mΩ·cm2 are achieved, resulting in a Baliga’s figure of merit (BFOM) of approximately 0.2 GW /cm 2. A forward current density of 465 A cm−2 at a forward voltage of 3 V is attained. The simulated reverse leakage current density remains low at 9.0 mA cm−2 at 800 V. Floating field rings, in conjunction with junction termination extension (JTE), were utilized as edge termination methods to attain a high breakdown voltage. The impact of β-Ga2O3 periodic fin width fluctuations on the electrical characteristics of JBS was investigated. Due to the enhanced sidewall depletion effect caused by p-type GaN, the forward current (I F ) and reverse current (I R ) decrease when the β-Ga2O3 periodic fin width decreases. The findings of this study indicate the remarkable promise of p-GaN/n-Ga2O3 JBS diodes for power device applications.

Proposal of Damage-Free SiC Wafer Dicing Using Water Jet Guided Laser

A damage-free SiC wafer dicing method has been strongly required for practical applications of power devices. In this research, we propose water jet guided laser processing as a novel dicing method. Water jet guided laser processing, which uses a high-pressure fine water jet as waveguide, could generate no cracks or dislocations in crystal. In this paper, water jet guided laser grooving quality was evaluated to demonstrate there should be no chippings and basal plane dislocations. Scanning electron microscopic and X-ray topography observations were conducted. The results indicated the superiority of water jet guided laser dicing to a conventional dicing method.

Enhancing growth rate in homoepitaxial growth of β-Ga2O3 with flat surface via hydrochloric acid addition in mist CVD

Gallium oxide (Ga2O3) is a wide-bandgap oxide semiconductor, with a bandgap of ∼4.9 eV, making it a promising material for power device applications. This study focuses on the effect of hydrochloric acid addition on the growth rate in homoepitaxial growth of β-Ga2O3 using a mist chemical vapor deposition method. For homoepitaxial growth on a (001) β-Ga2O3 substrate, we introduced different concentrations of HCl into the source solution to assess its impact on the growth rate, crystal structures, and surface morphologies of the films. At a growth temperature of 900 °C, HCl addition linearly increased film thickness, enhancing the growth rate by 4.8 times with 9.09 vol. % HCl. No peaks associated with other phases were exhibited by each sample, indicating pure homoepitaxial growth. When comparing samples with similar film thicknesses, the root-mean-square (rms) roughness was enhanced by 1/7 with an increase in the HCl concentration. However, at 800 °C, an increasing solution concentration caused pronounced step bunching and elevated rms roughness, in contrast with the minimal effect observed at 900 °C. In experiments with hydrochloric acid addition at 900 °C, we observed a striped morphology, which maintained consistent rms roughness despite higher temperature.

Towards first-principles predict of doped α-Ga2O3 based structural and electrical properties

The α-Ga2O3 holds significant research value on high power device applications for its superior breakdown voltage performance. However, research concerning the doping of α-Ga2O3 remains scant, and the optimal dopant remains unidentified. To identify a potential n-type dopant, a theoretical study of the effects of group IV atoms (Si, Ge, Sn) on doped α-Ga2O3 was evaluated through the first principles calculations. We have systematically explored the lattice deformation, band structure, density of state, charge density difference and electron localization functions. The electron mobility is then evaluated by the deformation potential theory. The lowest formation energy of the Si-doped system suggests it forms the most readily. Meanwhile, Si loses approximately 1.5 times more electrons than Ge and Sn in the doped α-Ga2O3, as evidenced by the charge density difference and electron localization functions. Furthermore, our results reveal that Si is a superior dopant over Ge and Sn. It is owing to a small interaction between the Si 3 s state and the Ga 4 s generated host CBM, resulting in a minimal effect on the CBM even at high doping levels. The findings of this study have important consequences for improving the doping process of α-Ga2O3 and achieving the development of optoelectronic devices.

Research and Progress on Organic Semiconductor Power Devices.

Organic semiconductor power devices have been attracting increasing attention due to their advantages such as flexibility, low fabrication cost, and sustainability. They have found wide applications in fields such as flexible electronic devices and biomedical devices. However, in the field of power applications, the lack of reliable organic semiconductor power devices is mainly attributed to the limited thermal stability and electrical stability of organic materials. This article provides a detailed review of the development status of organic semiconductor power devices from three aspects: device structure, organic materials, and fabrication methods. It clarifies that the future development goal is to enhance the voltage resistance and thermal stability of organic transistors through higher-performance structure design, higher-mobility materials, and higher-quality fabrication methods. The continuous innovation and development of the structures, materials, and fabrication of these devices will generate more novel devices, offering more possibilities for the application of organic semiconductor power devices. This information is of great reference value and guidance significance for engineers in related fields.

Modeling and Suppression of Conducted Interference in Flyback Power Supplies Based on GaN Devices

The application of GaN power devices has significantly increased the power density of flyback power supplies but has also caused severe electromagnetic interference (EMI) issues. To address the challenge of conducted interference in flyback power supplies, a comprehensive analysis of the transmission mechanism of conducted common-mode noise is undertaken. This analysis involves simplifying the equivalent model of conducted interference and leveraging the circuit characteristics of conducted noise to propose a solution for attenuating common-mode noise. Considering the constraints of external compensation capacitors, a balanced winding is further introduced to mitigate the impact of noise. To enhance the efficacy of conducted interference suppression, it is suggested to change the winding structure of the transformer and incorporate a shielding winding. This configuration aims to minimize the generation and propagation of common-mode noise within the transformer. Finally, experimental verification is carried out using a 150 W GaN flyback power supply prototype. The experimental results demonstrate that the proposed method effectively suppresses common-mode noise in the circuit.

Surface characteristics and material removal mechanisms during nanogrinding on C-face and Si-face of 4H-SiC crystals: Experimental and molecular dynamics insights

4H-SiC wafers hold significant promise for applications in power devices and radiofrequency devices. In order to develop a cost-effective and efficient grinding technology for 4H-SiC wafers, it is imperative to thoroughly investigate the mechanisms underlying damage evolution on different crystal faces of 4H-SiC. Our approach involved employing a range of experimental techniques including nanoindentation, scratching, and grinding, coupled with molecular dynamics (MD) simulation to systematically analyze the material removal mechanisms on both the C-face and Si-face. Through a comprehensive comparison of mechanical properties, surface morphology, and subsurface damage distribution between the C-face and Si-face, we uncovered the plastic deformation mechanisms operating on each face. Our research findings emphasize that, compared to the Si-face, the C-face exhibits higher elastic modulus and hardness, but lower fracture toughness. Additionally, due to the C-face’s greater propensity for high-density dislocation formation compared to the Si-plane, stress release occurs in the machining area, resulting in smaller normal forces and aiding in reducing surface roughness after grinding. This study provides important guidance for the grinding of the two critical basal planes of single-crystal 4H-SiC.

A Review of β-Ga2O3 Power Diodes.

As the most stable phase of gallium oxide, β-Ga2O3 can enable high-quality, large-size, low-cost, and controllably doped wafers by the melt method. It also features a bandgap of 4.7-4.9 eV, a critical electric field strength of 8 MV/cm, and a Baliga's figure of merit (BFOM) of up to 3444, which is 10 and 4 times higher than that of SiC and GaN, respectively, showing great potential for application in power devices. However, the lack of effective p-type Ga2O3 limits the development of bipolar devices. Most research has focused on unipolar devices, with breakthroughs in recent years. This review mainly summarizes the research progress fora different structures of β-Ga2O3 power diodes and gives a brief introduction to their thermal management and circuit applications.

Ge doping of α-Ga2O3 thin films via mist chemical vapor deposition and their application in Schottky barrier diodes

We performed Ge doping of α-Ga2O3 thin films grown on m-plane sapphire substrates using mist chemical vapor deposition. Although the typical growth rate was high at 4 μm/h, the resultant α-Ga2O3 thin films exhibited high crystallinity. We controlled the carrier density in the range of 8.2 × 1016–1.6 × 1019 cm−3 using bis[2-carboxyethylgermanium(IV)]sesquioxide as the Ge source. The highest mobility achieved was 66 cm2 V−1 s−1 at a carrier concentration of 6.3 × 1017 cm−3. Through secondary ion mass spectrometry analysis, a linear relationship between the Ge concentration in the α-Ga2O3 thin films and the molar ratio of Ge to Ga in the source solution was established. The quasi-vertical Schottky barrier diode fabricated using the Ge-doped α-Ga2O3 thin films exhibited an on-resistance of 7.6 mΩ cm2 and a rectification ratio of 1010. These results highlight the good performance of the fabricated device and the significant potential of Ge-doped α-Ga2O3 for power-device applications.

Study of AlN Epitaxial Growth on Si (111) Substrate Using Pulsed Metal–Organic Chemical Vapour Deposition

A dense and smooth aluminium nitride thin film grown on a silicon (111) substrates using pulsed metal–organic chemical vapor deposition is presented. The influence of the pulsed cycle numbers on the surface morphology and crystalline quality of the aluminium nitride films are discussed in detail. It was found that 70 cycle numbers produced the most optimized aluminium nitride films. Field emission scanning electron microscopy and atomic force microscopy images show a dense and smooth morphology with a root-mean-square-roughness of 2.13 nm. The narrowest FWHM of the X-ray rocking curve for the AlN 0002 and 10–12 reflections are 2756 arcsec and 3450 arcsec, respectively. Furthermore, reciprocal space mapping reveals an in-plane tensile strain of 0.28%, which was induced by the heteroepitaxial growth on the silicon (111) substrate. This work provides an alternative approach to grow aluminium nitride for possible application in optoelectronic and power devices.

Dielectric properties of low-temperature-grown homoepitaxial (−201) β-Ga2O3 thin film by atmospheric pressure plasma-assisted CVD

The atmospheric pressure plasma-assisted chemical vapor deposition technique has successfully demonstrated unintentionally doped (UID) Ga2O3 growth at 350 °C. This technique allows independent and homogeneous multiple nuclei growth of Ga2O3, leading to three-dimensional grain growth at a rate of ⁓0.17 μm/h. In the study of Schottky barrier diodes, the Schottky-like current (I)–voltage (V) response shows typical behavior on Ga2O3. This is a good sign at an early stage of device development on the grown sample. The extracted barrier height of ⁓2.20 eV was higher, which may be due to unintentional PtOx formation on the Ga2O3 surface. Furthermore, the extracted capacitance (C)–voltage (V) depth profiling of the effective impurity concentration was nearly flat, ⁓1.5 × 1017 cm−3, in the unintentionally doped grown film. The effective impurity concentration is comparable to the UID carrier concentration of epitaxial films fabricated using the high temperature growth technique. Therefore, low-temperature-grown homoepitaxial Ga2O3 thin films grown by atmospheric pressure-plasma-assisted chemical vapor deposition can be used in future Ga2O3-based power device applications.

A hybrid cathode catalytic layer composed of M–N–C and Pt/C for direct methanol fuel cells with high methanol tolerance

Pt/C based direct methanol fuel cells (DMFCs) always suffer from a serious methanol crossover under a high concentration of methanol solution. In this paper, we report a novel hybrid cathode catalytic layer (CCL) consisting of a physical blend of Pt/C and Fe-N-C. DMFC based on the hybrid CCL with an optimized loadings (0.25 mg cm−2 Fe-N-C and 2 mgPt cm-2Pt/C) outputs a high power density of 28.87 mW cm−2 at 10 M methanol, and the single Pt/C based cell only shows a low power density of 12.04 mW cm−2 in comparison. Such a large improvement attributes to the increasing amount of reactive oxygen species (ROS), which is produced by Fe-N-C via an incomplete four-electron transfer process in oxygen reduction reaction (ORR). Inspired by this strategy, several M−N−C catalysts were synthesized, among which Cu-N-C shows the most brilliant performance to enhance the methanol tolerance of Pt/C. The peak power density of DMFC with Cu-N-C based hybrid CCL exceeds 31 mW cm−2 at 10 M methanol, which is superior to that of cells with Fe-N-C based hybrid CCL. This work provides a new approach for designing DMFCs with high energy density, which is practical for applications of portable power devices.