Potential For Quantum Information Processing Research Articles

Modulations of the work function and morphology of a single MoS2 nanotube by charge injection.

Both the miniaturization of transistor components and the ongoing investigation of material systems with potential for quantum information processing have significantly increased current interest of researchers in semiconducting inorganic nanotubes. Here we report on an additional outstanding aspect of these nanostructures, namely the intrinsic coupling of electronic and mechanical properties. We observe electronic and morphology changes in a single MoS2 nanotube, exposed to charge injections by means of an atomic-force-microscopy tip. An elliptic deformation of the nanotube and helical twisting of the nanotube are visible, consistent with the reverse piezoelectric effect. Work-function changes are found to be dependent on the polarity of the injected carriers. An unexpected long-term persistence of the shape deformations is observed and explained with accumulation of structural defects and the resultant strain, which could cause a memory-like charge confinement and a long lasting modulation of the work function.

Chiral coupling between a ferromagnetic magnon and a superconducting qubit

Chiral coupling at the single-quantum level promises to be a remarkable potential for quantum information processing. Here we propose to achieve a chiral interaction between a magnon mode in a ferromagnetic sphere and a superconducting qubit mediated by a one-dimensional coupled-cavity array. When the qubit is coupled to two lattice sites of the array and each one is encoded with a tunable phase, we can acquire a directional qubit-magnon interaction via the quantum interference effect. This work opens up a new route to construct chiral devices, which are expected to become a building block in quantum magnonic networks.

Proposal for low-power atom trapping on a GaN-on-sapphire chip

The hybrid photon-atom integrated circuits, which include photonic microcavities and trapped single neutral atom in their evanescent field, are of great potential for quantum information processing. In this platform, the atoms provide the single-photon nonlinearity and long-lived memory, which are complementary to the excellent passive photonics devices in conventional quantum photonic circuits. In this work, we propose a stable platform for realizing the hybrid photon-atom circuits based on an unsuspended photonic chip. By introducing high-order modes in the microring, a feasible evanescent-field trap potential well $\sim0.3\,\mathrm{mK}$ could be obtained by only $10\,\mathrm{mW}$-level power in the cavity, compared with $100\,\mathrm{mW}$-level power required in the scheme based on fundamental modes. Based on our scheme, stable single atom trapping with relatively low laser power is feasible for future studies on high-fidelity quantum gates, single-photon sources, as well as many-body quantum physics based on a controllable atom array in a microcavity.

Measuring the time–frequency properties of photon pairs: A short review

Encoding information in the time–frequency domain demonstrates its potential for quantum information processing. It offers a novel scheme for communications with large alphabets, computing with large quantum systems, and new approaches to metrology. It is then crucial to secure full control on the generation of time–frequency quantum states and their properties. Here, the authors present an overview of the theoretical background and the technical aspects related to the characterization of time–frequency properties of two-photon states. The authors provide a detailed account of the methodologies that have been implemented for measuring frequency correlations and for the retrieval of the full spectral wavefunction. This effort has benefited enormously from the adaptation of classical metrology schemes to the needs of operating at the single-photon level.

Single Silicon Vacancy Centers in 10 nm Diamonds for Quantum Information Applications

Ultra-small, low-strain, artificially produced diamonds with an internal, active color center have substantial potential for quantum information processing and biomedical applications. Thus, it is of great importance to be able to artificially produce such diamonds. Here, we report on the high-pressure, high-temperature synthesis of such nanodiamonds about 10 nm in size and containing an optically active, single silicon-vacancy color center. Using special sample preparation technique, we were able to prepare samples containing single nanodiamonds on the surface. By correlating atomic-force microscope images and confocal optical images we verified presents of optically active color centers in single nanocrystals, and using second-order correlation measurements proved single-photon emission statistics of this nanodiamonds. This color centers have non-blinking, spectrally narrow emission with narrow distribution of spectral width and positions of zero-phonon line thus proving high quality of the nanodiamonds produced

Picosecond dynamics of a silicon donor based terahertz detector device

We report the characteristics of a simple complementary metal-oxide-semiconductor compatible terahertz detector device with low response time (nanoseconds) determined using a short-pulse, high intensity free-electron laser. The noise equivalent power was 1 × 10−11 W Hz−1/2. The detector has an enhanced response over narrow bands, most notably at 9.5 THz, with a continuum response at higher frequencies. Using such a device, the dynamics of donors in silicon can be explored, a system which has great potential for quantum information processing.

Tuning Manganese Dopant Spin Interactions in Single GaN Nanowires at Room Temperature

Control of electron spins in individual magnetically doped semiconductor nanostructures has considerable potential for quantum information processing and storage. The manipulations of dilute magnetic interactions have largely been restricted to low temperatures, limiting their potential technological applications. Among the systems predicted to be ferromagnetic above room temperature, Mn-doped GaN has attracted particular attention, due to its attractive optical and electrical properties. However, the experimental data have been inconsistent, and the origin of the magnetic interactions remains unclear. Furthermore, there has been no demonstration of tuning the dopant exchange interactions within a single nanostructure, which is necessary for the design of nanoscale spin-electronic (spintronic) devices. Here we directly show for the first time intrinsic magnetization of manganese dopants in individual gallium nitride nanowires (NWs) at room temperature. Using high-resolution circularly polarized X-ray microscopy imaging, we demonstrate the dependence of the manganese exchange interactions on the NW orientation with respect to the external magnetic field. The crystalline anisotropy allows for the control of dilute magnetization in a single NW and the application of bottom-up approaches, such as in situ nanowire growth control or targeted positioning of individual NWs, for the design of networks for quantum information technologies.

Long live the spin

The long spin-coherence time of electrons in semiconductor quantum dots has strong potential for quantum information processing. A new study shows a way to further enhance it by controlling the interaction of electrons with light.