Positive Magnetoresistance Research Articles

Colossal Magnetoresistance in Layered Diluted Magnetic Semiconductor Rb(Zn,Li,Mn)4As3 Single Crystals

Diluted magnetic semiconductors (DMSs) with tunable ferromagnetism are among the most promising materials for fabricating spintronic devices. Some DMS systems have sizeable magnetoresistances that can further extend their applications. Here, we report a new DMS Rb(Zn1−x−yLiyMnx)4As3 with a quasi-two-dimensional structure showing sizeable anisotropies in its ferromagnetism and transverse magnetoresistance (MR). With proper charge and spin doping, single crystals of the DMS display Curie temperatures up to 24 K. Analysis of the critical behavior via Arrott plots confirms the long-range ferromagnetic ordering in the Rb(Zn1−x−yLiyMnx)4As3 single crystals. We observed remarkable intrinsic MR effects in the single crystals (i.e., a positive MR of 85% at 0.4 T and a colossal negative MR of −93% at 7 T).

<i>x</i>Fe/Bi<sub>0.5</sub>Sb<sub>1.5</sub>Te<sub>3</sub> thermoelectromagnetic films with coexistence of positive and negative magnetoresistance

Thermoelectric (TE) films with excellent electrical transport property are key materials for developing efficient in-plane heat dissipation technology, but their low electrical transport property is a challenge that restricts their application. Recently, a new thermo-electro-magnetic coupling effect has been proposed to significantly improve the comprehensive TE performance. In order to explore the influence of the above effects on the electric transport property of TE films, we develop an integrated preparation method through ball milling dispersion, screen-printing and hot-pressing curing, obtaining a series of <i>x</i>Fe/Bi<sub>0.5</sub>Sb<sub>1.5</sub>Te<sub>3</sub> (BST)/epoxy TE films in which Fe nanoparticles serve as the second phase, resulting in the thermo-electro-magnetic coupling effect , and also we study their influence on the electrothermal transport performance. The results are shown below. The positive and negative magnetoresistance are co-existent in <i>x</i>Fe/BST/epoxy thermoelectromagnetic films; the preferred orientation factor of BST (000<i>l</i>) is positively proportional to the positive magnetoresistance (MR<sup>+</sup>), resulting in an increase of the conductivity; the spin-dependent scattering of negative magnetoresistance (MR<sup>–</sup>) derived from the local magnetic moment of strong ferromagnetic Fe nanoparticles increases the Seebeck coefficient. Hence, the power factor of Fe/BST/epoxy thermoelectromagnetic film near room temperature reaches 2.87 mW⋅K<sup>–2</sup>⋅m<sup>–1</sup>, which is 78% higher than that of BST/epoxy thermoelectric film. These results indicate that the coexistence of positive and negative magnetoresistance in thermoelectromagnetic films can not only relieve the coupling relationship between conductivity and Seebeck coefficient in TE materials, but also provide a new physical mechanism for the excellent TE conversion performance induced by magnetic nanoparticles.

Angular-dependent magnetoresistance modulated by interfacial magnetic state in Pt/LSMO heterostructures.

The interfaces between heavy metals and antiferromagnetic materials have garnered significant attention due to their interesting physical properties. La0.35Sr0.65MnO3 (LSMO), as a typical manganite, exhibits an antiferromagnetic ground state that can be controlled through epitaxial strain and interfacial spin-orbit coupling. In this work, we reported the diverse magnetoresistance, influenced by the interfacial magnetic state, in Pt (3 nm)/LSMO (6-20 nm) heterostructures. The strong spin-orbit coupling of Pt and Dzyaloshinskii-Moriya interaction alter the spin structure and enhance the electron scattering at the Pt/LSMO interface, resulting in positive magnetoresistance. The interfacial angular-dependent magnetoresistance modulated by the interfacial magnetic states was also observed in the Pt/LSMO (20 nm) heterostructures. Our findings contribute to a broader understanding of interfacial properties between heavy metals and antiferromagnetic manganites.

Interplay between superconducting fluctuations and weak localization in disordered TiN thin films.

The interplay between superconducting fluctuations (SFs) and weak localization (WL) has been probed by temperature dependent resistance [R(T)] and magnetoresistance (MR) measurements in two-dimensional disordered superconducting TiN thin films. Within a narrow range of temperature above transition temperature (Tc), the coexistence of SF-mediated positive MR and WL-led negative MR in different ranges of magnetic fields and a crossover from positive MR to negative MR with an increase in temperature are reported herein. The crossover temperature coincides with a characteristic temperature (Tmax) at which a resistance peak appears in the zero-field R(T). The resistance peak and associated magnetoresistance anomalies are addressed using quantum corrections to conductivity (QCC) theory. We show that WL can be accounted for the observed negative MR. By introducing individual coefficients to both SFs and WL contributions, the dominance of one over the other is monitored with respect to temperature. It is observed that just above Tc, SFs dominate; with an increase in temperature, the contributions from both become comparable; and finally, at Tmax, WL takes over completely. The presented approach may be adopted to compare various quantum contributions in two-dimensional superconductors, particularly in the regime where both SFs and WL are pronounced.

Unconventional room-temperature negative magnetoresistance effect in Au/n-Ge:Sb/Au devices

Non-magnetic semiconductor materials and their devices have attracted wide attention since they are usually prone to exhibit large positive magnetoresistance (MR) effect in a low static magnetic field environment at room temperature. However, how to obtain a large room-temperature negative MR effect in them remains to be studied. In this paper, by designing an Au/n-Ge:Sb/Au device with metal electrodes located on identical side, we observe an obvious room-temperature negative MR effect in a specific 50 T pulsed high magnetic field direction environment, but not in a static low magnetic field environment. Through the analysis of the experimental measurement of the Hall effect results and bipolar transport theory, we propose that this unconventional negative MR effect is mainly related to the charge accumulation on the surface of the device under the modulation of the stronger Lorentz force provided by the pulsed high magnetic field. This theoretical analytical model is further confirmed by regulating the geometry size of the device. Our work sheds light on the development of novel magnetic sensing, magnetic logic and other devices based on non-magnetic semiconductors operating in pulsed high magnetic field environment.

Structural characterization, electrical and magnetic properties of (In0.97-xFexMg0.03)2O3 films

Structural, electrical, and magnetic properties of (In0.97-xFexMg0.03)2O3 films with different Fe concentration are investigated. The doped Fe ions replace the In1 sites of In2O3 lattice with the mixed-valence of +2 and +3 states and form FeIn1+2VO complex based on the real-space multiple-scattering simulation. The room temperature ferromagnetic hysteresis loop of Fe/Mg co-doped In2O3 films shows ferromagnetic ordering with coercivity Hc of about 150-300 Oe. Obvious increase of ferromagnetic hysteresis loop and saturation magnetic moment with a maximum value of 8.45 emu/cm3 (x = 0.08) are observed due to the more incorporation of Fe ions. All the films exhibit n-type conductive behavior, which are mainly dominated by Mott variable range hopping with strong localization of carriers. Interestingly, the contribution of positive and negative magnetoresistance (MR) strongly correlates with Fe dopant and temperature. It can conclude that the FeIn1+2VO complex based on bound magnetic polaron model plays a key role for achieving the intrinsic ferromagnetism.

Influence of Ge-doping on the collinear and non-collinear antiferromagnetic phases of Mn[formula omitted]Si[formula omitted] alloy

Effect of Ge-doping at the non-magnetic site (Si-site) of the Mn-based binary alloy Mn5Si3 has been explored through temperature-dependent x-ray diffraction, dc-magnetic, and electrical transport measurements. All the doped alloys show D88 type hexagonal structure with space group P63/mcm at room temperature and undergoes two structural distortions, hexagonal (P63/mcm) → orthorhombic (Ccmm) → orthorhombic (Cc2m), on cooling. The magnetic characters of these orthorhombic (Cc2m), orthorhombic (Ccmm), and hexagonal (P63/mcm) phases are non-collinear antiferromagnetic (AFM1), collinear antiferromagnetic (AFM2), and paramagnetic (PM), respectively. Doping of Ge results in a significant increase in the AFM1 to AFM2 transition temperature (TN1). However, the AFM2 to PM transition point remains unchanged. In addition, a reasonable increase in the critical field values of the AFM1 to AFM2 transition via another non-collinear antiferromagnetic phase (AFM1′) with increasing Ge concentration has been observed, indicating the strengthening of AFM1 and AFM1′ phases over the AFM2 phase. Such behaviors make the observation of unusual magnetic properties of undoped Mn5Si3 alloys, like inverted hysteresis loop (IHL) and thermomagnetic irreversibility (TI), more evident for these Ge-doped alloys. Further, this study unfolds the presence of conventional and inverse magnetocaloric effect and they found to decrease with Ge doping. An interesting interplay for positive and negative magnetoresistance has also been observed in all the studied alloys.

Role of morphology and composition in the transport properties of highly conducting CVD grown PtTex

Platinum telluride (PtTex), a metallic noble transition-metal dichalcogenide, has emerged as a central candidate for magnetic and optoelectronic applications. Recently, PtTex has drawn great attention because of its large positive magnetoresistance and broadband photodetection owing to its astounding electron transport properties. Here, we report the role of morphology, texture, and composition in the transport properties of CVD-grown highly conducting PtTex. Two different compositions of Te atoms, named tellurium stoichiometric (TS) and tellurium rich (TR), with different morphology have been obtained in the PtTex films. The highest longitudinal conductivity was found to be ∼ 3.57 × 107 and 3.83 × 106 S m−1 at 200 K in the TR and TS-PtTex samples, respectively. The maximum carrier density in TR and TS-PtTex samples was found to be of the order of 1022 and 1021 cm−3, respectively. Further, the negative magnetoresistance has also been found to be ∼ −2.2% at 300 K in the presence of an in-plane magnetic field of 9 T. Our results, reporting extremely high conductivity along with negative magnetoresistance, promise exciting applications of PtTex for nanoelectronic devices.

Study of the electrophysical and magnetic properties of a Dirac 3D semimetal Cd3As2 with nanogranules of MnAs

We report on the main results of studying the electrical and magnetoresistance (MR) of a composite material consisting of 70 % mol. Dirac semi-metal Cd3As2 and 30 % mol. ferromagnet MnAs at pressures up to 50 GPa in a diamond anvil cell with a «rounded cone-flat» type anvils, as well as magnetization at hydrostatic pressures up to 6 GPa in a toroid-shaped high-pressure cell, both at room temperature and in the temperature range of 180 – 350 K at atmospheric pressure. A mixture of methanol and ethanol in a ratio of 4:1 was used as a pressure transmitting medium. Elemental analysis of Cd3As2 + 30 % mol MnAs composites showed that much of the volume is occupied by the Cd3As2 phase. The proportion of MnAs phase inclusions is less than 5 %. The feature of Cd3As2 + MnAs is the presence of a significant region of non-mixing of the Cd3As2 and MnAs phase melts. A negative MR was revealed with increasing pressure in the entire studied baric zone. The maximum negative MR is observed in the baric zone of 22 – 26 GPa. Further increase in the pressure up to the maximum level result in the appearance of several extrema on the ΔR/R0(P) curve, with negative MR not exceeding 4 %. Upon pressure release from 50 GPa, the baric dependence of ΔR/R0(P) is characterized by an inversion of the MR sign: at pressures around 40 GPa, a negative MR is replaced by a positive MR, and at around 20 GPa, the maximum value of positive MR of ~5.3 % is observed. Signs of the instability of the monoclinic structure of Cd3As2 resulted from its partial decomposition upon decompression were revealed. The results obtained can be used in spintronics when using appropriate composite materials.

Large positive magnetoresistance and high mobility in topological insulator candidate LaP

We reported herein the single crystal growth and the comprehensive study of basic physical properties including electronic transport, magnetic, specific heat of topological insulator candidate LaP. Single crystal LaP of rock salt type structure was synthesized by Sn flux method. Under low temperature and high magnetic field of T= 2 K and B= 9 T, large positive magnetoresistance (LMR) of 500% was discovered. The Hall effect measurements show that the conduction carriers are dominated by holes among the temperature range from 300 K to 2 K, the carrier concentration n_{h} =4.94times 10^{19} cm−3 and n_{e} =5.02times 10^{16} cm−3 and the mobility of LaP reached as high as mu _{h}=1.57times 10^{4} cm2 V−1 S−1 and mu _{e} = 1.55times 10^{3} cm2 V−1 S−1 obtained at 2 K, which can be explained by multiband model physics like other topological quantum material systems with large MR. LaP shows diamagnetism over a wide temperature range from 2 K to 300 K without any magnetic phase transition by susceptibility measurements. No evidence of phase transitions from 2 K to 300 K was observed in the specific heat measurement. The electronic specific heat coefficient is obtained 0.538 m J mol−1 K−2 for LaP single crystal, which responds to a small electron density state near the Fermi level. Our results would be helpful in renewing interest in studying emergent phenomena arisen from topological semimetals. LaP offers a platform for understanding the interactions between large magnetoresistance, high mobility and topological band structure.

Low-temperature electron transport of rutile-type GexSn1−xO2

Rutile-type wide and ultrawide band-gap oxide semiconductors are emerging materials for high-power electronics and deep ultraviolet optoelectronics applications. A rutile-type GeO2-SnO2 alloy (r-GexSn1–xO2) recently found is one of such materials. Herein, we report low-temperature electron transport properties of r-GexSn1−xO2 thin films with x = 0.28 and 0.41. Based on resistivity and magnetoresistance measurements, along with the theory of quantum interference, it is suggested that Efros–Shklovskii variable-range hopping, i.e., hopping over the states within the Coulomb gap, is dominant at lower temperatures (T ≤ 10 and 15 K) in both r-Ge0.41Sn0.59O2 and r-Ge0.28Sn0.72O2. The negative and positive magnetoresistances observed at low temperatures are attributable to the quantum interference and field-induced spin alignment, respectively. The magnetoresistance measurements at higher temperatures suggest that both Mott variable–range hopping and thermally activated band conduction occur at T < 100 K and that almost pure thermally activated band conduction takes place at T ≥ 150 K.

Colossal anomalous Hall conductivity and topological Hall effect in ferromagnetic kagome metal Nd3Al

We report a polycrystalline kagome metallic ferromagnet Nd3Al with a large unconventional positive magnetoresistance (∼80%) and a colossal anomalous Hall conductivity of 3 × 104 S/cm. We find that, though it is predominantly ferromagnetic, the low temperature phase is rather complex. The reduction in the effective moment, thermomagnetic irreversibility, anomalous temperature dependence of magnetization, large and non-saturating positive magnetoresistance, and existence of the finite topological Hall effect make this compound quite interesting. Various experimental proofs point toward topological band structure and topological spin texture in the frustrated kagome lattice. Ab initio calculations broadly confirm the presence of flatbands and Weyl points originating from the itinerant Nd-moments. The non-trivial band structure, enhanced skew scattering, and topological spin texture in a frustrated kagome lattice are found to be responsible for the colossal Hall conductivity and the topological Hall effect.

Colossal magnetoresistance in the multiple wave vector charge density wave regime of an antiferromagnetic Dirac semimetal.

Colossal negative magnetoresistance is a well-known phenomenon, notably observed in hole-doped ferromagnetic manganites. It remains a major research topic due to its potential in technological applications. In contrast, topological semimetals show large but positive magnetoresistance, originated from the high-mobility charge carriers. Here, we show that in the highly electron-doped region, the Dirac semimetal CeSbTe demonstrates similar properties as the manganites. CeSb0.11Te1.90 hosts multiple charge density wave modulation vectors and has a complex magnetic phase diagram. We confirm that this compound is an antiferromagnetic Dirac semimetal. Despite having a metallic Fermi surface, the electronic transport properties are semiconductor-like and deviate from known theoretical models. An external magnetic field induces a semiconductor metal-like transition, which results in a colossal negative magnetoresistance. Moreover, signatures of the coupling between the charge density wave and a spin modulation are observed in resistivity. This spin modulation also produces a giant anomalous Hall response.

Tunneling conductance regulated by the electrostatic barrier in monolayer black phosphorene

We investigate the tunneling conductance of monolayer black phosphorene through double magnetic barriers modulated by the electrostatic barrier. This magnetic barrier is generated by two ferromagnetic strips deposited on monolayer phosphorene and can form parallel (P) and antiparallel (AP) structures. Applying a voltage to a ferromagnetic strip will create an electrostatic barrier. The transmission of P and AP magnetic structures is calculated using the transfer matrix. Tunneling conductance is given by Landauer–Büttiker theory. Our results show that under double electrostatic barriers modulation, the AP conductance of the system is zero except for sharp peaks, while the P conductance has a certain value, which implies a large tunneling magnetoresistance. However, in the case of single electrostatic barrier modulation, the conductance becomes flat. For the Fermi level in the valence band, the movement of the Fermi level leads to the severe mismatching of transmitted wave vectors in the barrier region, resulting a positive and negative oscillation magnetoresistance. This may be useful for designing memory using a two-dimensional electron gas system.

The Co2＋-Ir5＋ orbital hybridization in LaCaCoIrO6 double perovskite

Here, we report on the structural, electronic, and magnetic properties of a polycrystalline sample of the LaCaCoIrO6 double-perovskite investigated by means of synchrotron x-ray powder diffraction, x-ray absorption spectroscopy, and x-ray magnetic circular dichroism at the Co and Ir L2,3 edges, magnetometry, and electrical transport. Our results indicate a configuration of nearly Co2+/Ir5+ configuration for the transition-metal ions, with spin canting within the Co antiferromagnetic superstructure responsible for the ferromagnetic-like behavior observed below 100 K. The highly insulating character of LaCaCoIrO6 and its positive magnetoresistance further suggest that this antiferromagnetic superexchange interaction occurs through an indirect hybridization between the Co eg orbitals.

Detailed investigation on structural, optical, dielectric and magneto-dielectric properties with enhanced magneto-impedance characteristic of NdFeO3 nanoparticles

NdFeO3 (NFO) was synthesized using sol-gel citrate method and subsequent calcination at 1023 K. Utilizing Rietveld refinement analysis of the XRD pattern, it has been verified that NFO exhibits an orthorhombic crystal structure, with space group Pbnm. NFO grains were seen to be strongly agglomerated in a SEM image, despite their irregular shapes. The analysis of optical properties revealed a transmittance range of ∼20%–∼50% and an optical band gap of 2.15 eV for the NFO material. The dielectric properties of NFO were analyzed with respect to their dependence on frequency and temperature, while the ac electrical conductivity was studied in terms of its frequency variation. The dielectric dispersion behavior of NFO is explained by Maxwell Wagner-type polarization. A negative magneto-dielectric (MD) coupling of −19% and −35% was measured for ε and tanδ at 1 kHz for NFO. Magneto-impedance measurements on NFO showed positive magneto-resistance and both positive and negative magneto-capacitance, suggesting that the grain effect had a substantial role in the material's magnetic properties. These results suggest that NFO is an excellent choice for memory-based electronic devices with an appropriate band gap for optoelectronic applications having a large MD effect.

Highly sensitive magnetic properties and large linear magnetoresistance in antiferromagnetic CrxSe（0.875 ≤x ≤ 1）single crystals

CrxSe (x ≤ 1) is a class of quasi-layered binary compounds with potential applications in spintronics due to its intriguing antiferromagnetic properties. In this work, CrxSe single crystals with high Cr content (x = 0.87, 0.91 and 0.95) were grown, and their magnetic and transport properties were investigated in detail. It is found that with small increase of Cr content, the Néel temperature (TN) of the samples can dramatically increase from 147 K to 257 K, accompanied with obvious changes in the magnetic anisotropy and hysteresis. The phenomena of field-induced spin-flop transitions were unveiled in these alloys, indicating their comparatively low anisotropy. The magnetoresistance (MR) of the three compounds showed positive dependence at low temperatures and particularly, non-saturated linear positive MR was observed in Cr0.91Se and Cr0.95Se, with a large value of 16.2% achieved in Cr0.91Se (10 K, 9 T). The calculated Fermi surface and MR showed that the quasi-linear MR is a product of carrier compensation. Our work revealed highly sensitive magnetic and transport properties in the Cr-Se compounds, which can lay foundation when constructing further antiferromagnetic spintronic devices based on them.

Magnetic Properties of Silicon with Paramagnetic Impurity Atoms

One of the possible ways to obtain silicon with magnetic properties is the introduction of paramagnetic impurities into silicon: Cr, Mn, Fe, Ni, and Co. In our opinion, silicon materials containing magnetic nanosized clusters are most suitable for spintronic devices. The possibility of obtaining silicon with magnetic properties by diffusion doping was studied in this work. To obtain silicon doped with Cr, Mn, Fe and Ni impurity atoms, p-type single-crystal silicon with a specific resistance of ρ = 5 Ohm·cm and ρ = 0.5 Ohm·cm was used, and for doping with Co atoms, n-type silicon with resistivity ρ=10 Ohm·cm was used. The diffusion temperature and time were chosen such that, after diffusion annealing, the samples with impurity Cr, Fe, and Mn atoms remained highly compensated p-type, and when doped with impurity Co atoms, they remained high-resistance n-type. The results of the study showed that with decreasing temperature, the value of the negative magnetoresistance Δρ/ρ in the Si<Mn> samples increases and reaches its maximum value (about 800%) at T = 240 K, a further decrease in temperature leads to a decrease in the magnetoresistance, and at a temperature T = 170 K, the sign of the magnetoresistance is inverted. In Si <Cr> samples, with decreasing temperature, the positive magnetoresistance turns into a negative one, the value of which increases with decreasing temperature, and is achieved at T=100 K Δρ/ρ = 45–50%. In Si<Fe> samples, with decreasing temperature, the value of negative magnetoresistance increases monotonically and at T=100 K its value is Δρ/ρ = (100÷120) %. The study in Si<Сo> samples showed that with decreasing temperature the value of positive magnetoresistance increases and at Т=100 K it reaches Δρ/ρ = (17÷20) %. The study of magnetoresistance in samples - Si<Ni> showed that with decreasing temperature the value of positive magnetoresistance increases and at T=100 K it reaches Δρ/ρ = (10÷15) %. When studying the magnetic properties of p-Si <B, Mn> samples at low temperatures (below T=30 K), a ferromagnetic state was found, i.e. succeeded in obtaining a magnetic semiconductor material by the method of diffusion of a paramagnetic impurity. In the overcompensated Si <B, Mn> (n‑type) samples, no magnetic hysteresis was found. This shows a significant effect on the magnetic properties of the manganese impurity in silicon of its charge and, accordingly, spin state. Based on the results obtained, it can be argued that diffusion doping of silicon with manganese can be used to obtain silicon with magnetic properties.

Crystal structure and magnetic properties of Gd8Mn3Sb19

In this study, a novel magnetic semimetal compound, Gd8Mn3Sb19, was synthesized successfully via high-temperature solid-state reaction. The crystal structure of Gd8Mn3Sb19 was determined using both single crystal and powder X-ray diffraction techniques, revealing a non-centrosymmetric orthorhombic space group, Pmn21 (No. 31). The Sb atoms in Gd8Mn3Sb19 form five-atom-wide Sb57− ribbons, narrower three-atom-wide Sb35− ribbons, and single Sb3− anions. On the other hand, both Gd3+ and Mn2+ ions form the distorted Gd3 and Mn3 triangular lattices, respectively. The magnetic measurements suggest the complex magnetic interactions contributed by both Gd3+ and Mn2+ ions. A sharp peak observed in the magnetic susceptibility plot at approximately 25 K corresponds to the antiferromagnetic-type transition in Gd8Mn3Sb19. Furthermore, the magnetic measurements along different directions indicate the strong magnetic anisotropy present in Gd8Mn3Sb19, which is likely due to the complex magnetic interactions arising from the existence of Gd and Mn ions. Finally, the electrical resistivity measurements of Gd8Mn3Sb19 indicate semimetallic behavior with a positive magnetoresistance.

Low-temperature resistivity upturn and weak antilocalization in layered Ta1.04Ru0.78Te4 bulk single crystal

Quantum corrections to conductivity, which reflect charge carriers' quantum behavior, are a significant topic in condensed state physics and device design. A resistivity upturn at low temperature or weak antilocalization due to quantum corrections has been often observed experimentally. However, the coexistence of the low-temperature resistivity upturn and weak antilocalization from quantum corrections in bulk single crystals is seldom reported. Here, we report the transport properties of bulk Ta1.04Ru0.78Te4 single crystals. The samples showed a metallic behavior with a resistivity upturn below ∼8.6 K, which may be the result of quantum correction to the resistivity. The magnetic field enhances the upturn feature. The weakly nonlinear Hall resistivity with a positive slope suggests a p-type and multiband feature for bulk Ta1.04Ru0.78Te4; the electron and hole concentrations and mobilities of the samples are very close to each other and have the same order of magnitude. The Ta1.04Ru0.78Te4 single crystals displayed small and positive magnetoresistance, and the 3 K magnetoresistance at 9 T was about 15%. A lack of overlap of Kohler's plot curves at different temperature implies the violation of Kohler's rule. At low temperature, the dip-like magnetoresistance at low field strengths suggests a weak antilocalization in the Ta1.04Ru0.78Te4 single crystal. A small phase coherence length implies weakened screening and enhancing electron–electron interaction effects. These results reveal the quantum transport properties of Ta1.04Ru0.78Te4 single crystals, which can be considered in the future device design.