High performance thin film composite (TFC) membranes for reverse osmosis applications were fabricated by coating solutions of highly chlorine-tolerant disulfonated directly copolymerized poly(arylene ether sulfone) random copolymers (BPS-XX, e.g., BPS-20 and 32) on a commercially available porous polysulfone ( e.g., Udel ®) support. Solvents used in the formation of the TFCs must dissolve the sulfonated polysulfones used as the skin materials, while not harming the non-sulfonated polysulfone support membrane. For this purpose, environmentally friendly solvents were selected via a systematic screening process using a triangular solubility diagram. However, these benign solvents [ e.g., di(ethylene glycol)] generally have high boiling points (>∼190 °C). Thus, they necessitate the use of a special TFC formation process, since solvent evaporation at high temperatures caused pore shrinkage in the polysulfone support membrane and could lead to a catastrophic decrease in membrane water permeance. Support membranes were initially immersed in an IPA/glycerin mixture, after which the IPA was allowed to evaporate, leaving glycerin within the membrane pore structure. After a repeated coating procedure using dilute BPS-XX solutions, the TFC membranes were dried under vacuum at elevated temperatures. During this process, the glycerin reduced pore penetration of BPS-XX and prevented pore collapse during the drying procedures. Finally, water-miscible glycerin was eliminated via water treatment. The newly developed coating method formed ultra-thin and defect-free BPS-XX layers on a micro-porous Udel ® support membrane. For example, BPS-32 TFC membranes showed NaCl rejection (∼97%), similar to that of its dense membranes. Furthermore, decreasing the amount of coating solution and, therefore, the BPS-32 coating thickness, resulted in improved pure water flux. The TFC water flux was further improved and was accompanied by small reduction in salt rejection after various TFC membrane treatments ( e.g., in situ acidification or IPA treatment).
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