Polymer films with tailored dielectric properties and large electrical displacement are required for applications in microelectronics due to the need for ultrahigh speed and low transmission delays. In this study, we developed a low-k polyimide (PI) nanocomposite incorporated with metal–organic framework hollow ZIF-8 (HZIF-8) nanocrystals to achieve a high energy storage capacity. The PI nanocomposite film was prepared by solution casting a mixture of HZIF-8/polyamide acid with thermal imidization. A dielectric constant of 2.26 was obtained at 100 Hz for the 5 wt% nanocomposite with a multi-stage pore architecture. Due to improved interfacial polarization, the 1 wt% nanocomposite had a high energy density of 12.2 J/cm3 and a charge–discharge efficiency of 70% at 600 MV/m. The PI nanocomposite film exhibited dielectric reliability with inherent flexible performance, and it is expected to be a primary candidate for polymer dielectric applications in microelectronics.
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