Multi-functional devices are the recent trends in research, as they are cost-effective and reduce e-waste. In this study, detailed current-voltage measurement is performed on electro-polymerized Poly 3-methylthiophene (P3MT) thin film sandwiched between stainless steel (SS) and silver (Ag) electrodes, and the fabricated two-terminal device consisting of geometry SS/P3MT/Ag. Systematic and comparative measurements on partially doped P3MT devices with three dopants (TBAPF6, LiClO4 & TBABF4) helped in realizing multi-functionality. In all the devices the following multifunctional features are demonstrated: negative differential resistance (NDR), sweep voltage-controlled resistive switching, analog memory, and synaptic plasticity. Charge transport in all the devices is modeled based on charge accumulation, trapping, and de-trapping of injected carriers.