Polarization Splitter-rotator Research Articles

Photonic Metamaterial‐Inspired Polarization Manipulating Devices on Etchless Thin Film Lithium Niobate Platform

AbstractPhotonic metamaterials interact with light at the micro–nano scale, enabling unprecedented optical manipulation capabilities, which play a key role in nonlinear optics, spin optics, negative index, and zero index materials. Recently, thin‐film lithium niobate on insulator (LNOI) has emerged as a promising platform for integrated photonics due to its unique material properties, including an excellent electro–optic effect, wide transparency window, and low waveguide losses. Metamaterial structures are promising for constructing novel integrated photonic circuit building blocks on LNOI as they can provide advantageous circuit functionality. In this work, as a proof of concept, high‐performance polarization manipulating devices including polarization splitter rotator (PSR), polarization rotator (PR), and polarizer are demonstrated using photonic metamaterials on the etchless LNOI platform by introducing a silicon nitride layer on the top of LNOI wafer as the loading material. In this way, full advantage of lithium niobate (LN) can be taken to achieve various high‐performance integrated photonic devices, while avoiding the etching of LN and simplifying the fabrication process greatly, which can bring bright prospects for achieving large‐scale lithium niobate integrated photonic circuits.

Compact and broadband silicon polarization splitter-rotator using adiabaticity engineering.

We propose and demonstrate a short and broadband silicon mode-conversion polarization splitter-rotator (PSR) consisting of a mode-conversion taper and an adiabatic coupler-based mode sorter both optimized by adiabaticity engineering (AE). AE is used to optimize the distribution of adiabaticity parameter over the length of the PSR, providing shortcut to adiabaticity at a shorter device length. The total length of the PSR is 85 µm. The design is compatible with standard silicon photonics platforms and requires only one patterning step. Fabricated PSR has a polarization cross talk of less than -20 dB over the entire O-band for the TE polarization and a polarization cross talk of less than -15 dB from 1267 to 1348 nm for the TM polarization. Overall, the PSR shows low polarization cross talk (-15 dB) over a bandwidth of 81 nm in the O-band. Cross-wafer measurements show that the PSR has good fabrication tolerance.

Low-loss integrated dynamic polarization controller based on silicon photonics

<sec>A dynamic polarization controller (DPC) is an important component in fiber optic communication, optical imaging, and quantum technologies. The DPC can transform any input state of polarization (SOP) into any desired SOP to overcome polarization-related impairments resulting from high internally and externally induced birefringence. In this work, a low-loss silicon photonics-integrated DPC is designed and demonstrated experimentally. The whole chip is fabricated by using industry-standard silicon-on-insulator technology. Using the edge-coupling method, the coupler loss is reduced to less than 2 dB, and the total loss of DPC is reduced to 5.7 dB. Using a variable-step simulated annealing method, for a low-noise photodetector and high-static-extinction-ratio device, a dynamic polarization extinction ratio can reach more than 30 dB. The size of the DPC on the chip is 5.20 mm × 0.12 mm × 0.80 mm.</sec><sec>The DPC utilizes a 0°/45°/0°/45° structure, which can realize arbitrary polarization-based coordinate conversion with endless polarization control. The 0° and 45° transform structures and matrices are presented, and the principle of the 0° and 45° structures is explained in detail by using the Poincaré sphere.</sec><sec>A simulation using Lumerical is conducted to optimize the polarization rotator-splitter, which can transform the TM<sub>0</sub> mode light in one waveguide into the TE<sub>0</sub> mode light in the other waveguide while the TE<sub>0</sub> mode light in one waveguide remains unchanged. Based on the optimized structure, the static polarization extinction ratio of DPC can be measured to be a value greater than 40 dB.</sec><sec>The thermal phase shift (TPS) is characterized by using a Mach–Zehnder modulator. The length of the TPS is 400 μm, and the resistance of the metal heater is 2.00 kΩ. The maximum power consumed by the four TPSs is a total of 0.2 W. The modulation bandwidth of the DPC designed by our group is approximately 30 kHz. By considering an applied voltage of 5.6 V in the case of the TPS, the bandwidth–voltage product is 5.6 × 30 = 168 kHz·V.</sec><sec>To optimize the DPC parameters, such as the step length, electronic noise, and static polarization extinction ratio, numerical simulation results of the simulated annealing approach are analyzed in detail.</sec><sec>In conclusion, a low-loss silicon photonics-integrated DPC is designed and demonstrated experimentally. A dynamic polarization extinction ratio is obtained to be greater than 30 dB by using the variable-step simulated annealing method. The DPC is expected to be utilized in fiber or quantum communication systems to minimize size and further decrease costs.</sec>

Low-loss integrated dynamic polarization controller based on silicon photonics

<sec>A dynamic polarization controller (DPC) is an important component in fiber optic communication, optical imaging, and quantum technologies. The DPC can transform any input state of polarization (SOP) into any desired SOP to overcome polarization-related impairments resulting from high internally and externally induced birefringence. In this work, a low-loss silicon photonics-integrated DPC is designed and demonstrated experimentally. The whole chip is fabricated by using industry-standard silicon-on-insulator technology. Using the butting coupling method, the coupler loss is reduced to less than 2 dB, and the total loss of DPC is reduced to 5.7 dB. Using a variable-step simulated annealing method, for a low-noise photodetector and high-static-extinction-ratio device, a dynamic polarization extinction ratio can reach more than 30 dB. The size of the DPC on the chip is 5.20 mm × 0.12 mm × 0.80 mm.</sec><sec>The DPC utilizes a 0°/45°/0°/45° structure, which can realize arbitrary polarization-based coordinate conversion with endless polarization control. The 0° and 45° transform structures and matrices are presented, and the principle of the 0° and 45° structures is explained in detail by using the Poincaré sphere.</sec><sec>A simulation using Lumerical is conducted to optimize the polarization rotator-splitter, which can transform the TM<sub>0</sub> mode light in one waveguide into the TE<sub>0</sub> mode light in the other waveguide while the TE<sub>0</sub> mode light in one waveguide remains unchanged. Based on the optimized structure, the static polarization extinction ratio of DPC can be measured to be a value greater than 40 dB.</sec><sec>The thermal phase shift (TPS) is characterized by using a Mach–Zehnder modulator. The length of the TPS is 400 μm, and the resistance of the metal heater is 2.00 kΩ. The maximum power consumed by the four TPSs is a total of 0.2 W. The modulation bandwidth of the DPC designed by our group is approximately 30 kHz. By considering an applied voltage of 5.6 V in the case of the TPS, the bandwidth–voltage product is 5.6 × 30 = 168 kHz·V.</sec><sec>To optimize the DPC parameters, such as the step length, electronic noise, and static polarization extinction ratio, numerical simulation results of the simulated annealing approach are analyzed in detail.</sec><sec>In conclusion, a low-loss silicon photonics-integrated DPC is designed and demonstrated experimentally. A dynamic polarization extinction ratio is obtained to be greater than 30 dB by using the variable-step simulated annealing method. The DPC is expected to be utilized in fiber or quantum communication systems to minimize size and further decrease costs.</sec>

Polarization multiplexing silicon photonic optical phased array with a wide scanning range.

We propose and experimentally demonstrate a polarization multiplexed silicon optical phased array (OPA) with a wide scanning range. The two polarization states share the same power splitter tree and the phase shifter array. A polarization switch is introduced in front of the power splitter tree to manipulate the polarization state of the light in OPA. Through a polarization splitter-rotator (PSR), the light of two polarization states propagates into the superlattice grating antenna array. The wavelength tuning efficiency could be doubled by optimizing the parameters of the waveguide grating. We demonstrate the scheme on the commonly used 220 nm silicon-on-insulator (SOI) platform. Experimental results indicate that the 24.8° vertical scanning range could be realized with a high wavelength tuning efficiency of 0.31°/nm. The measured field of view (FOV) is 24.8 × 60°.

Silicon-Nanowire-Type Polarization-Diversified CWDM Demultiplexer for Low Polarization Crosstalk.

Coarse wavelength division multiplexing (CWDM)-targeted novel silicon (Si)-nanowire-type polarization-diversified optical demultiplexers were numerically analyzed and experimentally verified. The optical demultiplexer comprised a hybrid mode conversion-type polarization splitter rotator (PSR) and a delayed Mach-Zehnder interferometric demultiplexer. Si-nanowire-based devices were fabricated using a commercially available Si photonics foundry process, exhibiting nearly identical spectral responses regardless of the polarization states of the input signals under the PSR. The experiment demonstrated a low insertion loss of 1.0 dB and a polarization-dependent loss of 1.0 dB, effectively suppressing spectral crosstalk from other channels by less than -15 dB. Furthermore, a TM-mode rejection-filter-integrated optical demultiplexer was designed and experimentally validated to mitigate unwanted TM-mode-related polarization crosstalk that arose from the PSR. It exhibited an improved polarization crosstalk rejection efficiency of -25 dB to -50 dB within the whole CWDM spectral range.

Fully adiabatic polarization rotator-splitter based on thin-film lithium niobate platform.

A Polarization Rotator-Splitter (PRS) based on thin-film lithium niobate (TFLN) is demonstrated in this work. The PRS consists of a partially etched polarization rotating taper and an adiabatic coupler, which enables the input TE0 and TM0 to be output as TE0 from two ports, respectively. The fabricated PRS using standard i-line photolithography achieved large polarization extinction ratios (PERs) of > 20 dB across the whole C-band. Excellent polarization characteristics are maintained when the width is changed by ±150 nm. The on-chip insertion losses of TE0 and TM0 are less than 1.5 dB and 1 dB, respectively.

Silicon-based decoder for polarization-encoding quantum key distribution

Silicon-based polarization-encoding quantum key distribution (QKD) has been widely studied, owing to its low cost and robustness. However, prior studies have utilized off-chip devices to demodulate the quantum states or perform polarization compensation, given the difficulty of fabricating polarized independent components on the chip. In this paper we propose a fully chip-based decoder for polarization-encoding QKD. The chip realizes a polarization state analyzer and compensates for the BB84 protocol without requiring additional hardware. It is based on a polarization-to-path conversion method that uses a polarization splitter-rotator. The chip was fabricated using a standard silicon photonics foundry; it has a compact design and is suitable for mass production. In the experimental stability test, an average quantum bit error rate of 0.59% was achieved through continuous operation for 10 h without any polarization feedback. Furthermore, using the developed feedback algorithm, the chip enabled the automatic compensation of the fiber polarization drift, which was emulated by a random fiber polarization scrambler. In the case of the QKD demonstration, we obtained a finite-key secret rate of 240 bps over a fiber spool of 100 km. This study represents an important step toward the integrated, practical, and large-scale deployment of QKD systems.

Broadband polarization splitter-rotator on a thin-film lithium niobate with conversion-enhanced adiabatic tapers.

In this work, we propose and experimentally demonstrate a broadband polarization splitter-rotator (PSR) on the lithium niobate on insulator (LNOI). With multiple sequentially connected adiabatic tapers for waveguide mode conversion and directional coupling, the PSR shows a 160-nm bandwidth covering the C and L bands, an insertion loss of less than 2 dB, and an extinction ratio of more than 11 dB. Benefiting from the conversion-enhanced adiabatic tapers, the broadband device has a short length of 405 µm. Further optimization is performed to reduce the device length to 271 µm and comparable performances are achieved, demonstrating the feasibility of higher device compactness. The proposed design and principle can contribute to high-performance polarization management for integrated lithium niobate photonics.

Broadband Polarization Splitter-Rotator on Lithium Niobate-on-Insulator Platform

Polarization splitter-rotators (PSRs) are crucial components for controlling the polarization states of light in polarization-division multiplexing systems. However, current PSRs on the lithium niobate-on-insulator (LNOI) platform suffer from fabrication difficulty in high-precision shallow-etching and minimal feature size. In this letter, a large-bandwidth PSR is proposed based on LNOI strip-waveguide which only requires a single full etching step. The device is composed of an adiabatic taper, a Y-splitter, and a multi-mode interferometer. The minimal feature size is larger than 500 nm, which greatly reduces the difficulty of etching. Experimental results show that the insertion loss of such PSR is less than 1.5 dB with a polarization extinction ratio (PER) of more than 20 dB in a wide wavelength range of 1514–1640 nm for the TE0 mode. Additionally, a PER of 10 dB over 47 nm bandwidth (1502-1549 nm) for the TM0 mode is also demonstrated with our device. This LNOI-based PSR is promising in on-chip polarization-division multiplexing optical transmissions.

On-chip converter of waveguide polarization mode to free-space optical angular momentum mode

An integrated photonic device for converting on-chip waveguide modes to free-space optical angular momentum beams is proposed, which is composed of a polarization splitter rotator and a waveguide surface holographic grating. The output orbital angular momentum (OAM) state can be manipulated by the input polarization state. Therefore, the superposition of OAM states can be realized by controlling the on-chip input. According to the numerical results, the conversion efficiency of the transverse-magnetic (transverse-electric) mode to the optical angular momentum mode with l=−1(+1) is above 14% (18%), with the highest fidelity up to 0.84 and a working bandwidth of approximately 40 nm for a fidelity above 0.8. The proposed device provides a feasible information channel between the integrated optics and the free space and holds the potential for applications including the on-chip detection of the optical angular momentum beam.

Inverse-Designed Ultra-Compact Polarization Splitter–Rotator in Standard Silicon Photonic Platforms With Large Fabrication Tolerance

Polarization splitter-rotators (PSRs) are crucial components for controlling the polarization states of the input light in photonic integrated circuits. In this paper, we designed, fabricated and characterized a high-performance CMOS-compatible O-band PSR based on silicon-on-insulator (SOI) platform by using inverse design technique. The PSR mainly consists of a polarization rotator designed by our new proposed bi-level shape adjoint method and a mode demultiplexer designed by topology adjoint method. The device robustness against fabrication errors is significantly strengthened by properly designing optimization strategies. The proposed PSR displays a low insertion loss (<1 dB) and low crosstalk (<−20 dB) within a bandwidth of 50 nm by measurements. The device footprint is 3 × 17 μm, making this the smallest PSR based on standard silicon photonic platforms with no extra layers or an air cladding.

Ultracompact Polarization Splitter–Rotator Based on Shallowly Etched Subwavelength Gratings and Anisotropic Metasurfaces

Polarization splitter–rotators (PSRs) are an essential component in on-chip polarization-sensitive and polarization–division multiplexing systems. In this work, we propose an ultracompact and high-performance silicon-based polarization splitter–rotator utilizing anisotropic metasurfaces, which is the first to combine the two, to our knowledge. The tilted periodic metasurface structure has different modulation effects on different polarized light fields, such as the transverse–electric (TE) mode and the transverse–magnetic (TM) mode, which are beneficial for designing polarization management devices. According to the results, the entire length of the silicon PSR was ~13.5 μm. The TE-to-TM conversion loss and polarization conversion ratio ere −0.154 dB and 96.5% at 1.55 μm, respectively. In the meanwhile, the cross talk and reflection loss were −27.0 dB and −37.3 dB, when the fundamental TE mode was input. The insertion loss and cross talk were −0.19 dB and −25.01 dB at the central wavelength when the fundamental TM mode was input. In addition, the bandwidth reached up to ~112 nm with polarization conversion loss and insertion loss higher than −0.46 dB and −0.36 dB. The simulations also show that the designed devices had good fabrication tolerance.

Fabrication tolerant and broadband polarization splitter-rotator based on adiabatic mode evolution on thin-film lithium niobate

A polarization splitter-rotator device can facilitate on-chip polarization-division multiplexing to enhance the transmission data rate. Here, we propose and experimentally demonstrate a polarization splitter-rotator based on adiabatic mode evolution on the thin-film lithium niobate platform. The measured results for a fabricated device show low insertion losses of <-0.5 dB and large extinction ratios of >20 dB over the 110-nm band. Large fabrication tolerance is also demonstrated with extinction ratios of >15 dB in the wavelength range of 1465-1630 nm for a waveguide width variation of 80 nm.

Broadband ultra-compact polarization splitter-rotator using diagonally overlapped bi-layer architecture.

A broadband and ultra-compact polarization splitter-rotator based on diagonally overlapped bi-layer architecture and an asymmetrical directional coupler is proposed on a silicon-on-insulator platform. By leveraging the structure over supermode theory, a 1-dB bandwidth of 220 nm, extinction ratio (ER) of <19dB, and cross talk (XT) of <-15.85dB within the span of 1400-1700 nm and coupling length of 4.62 µm are achieved. In addition, TM0-TE0 conversion loss of ∼0.19dB, ER of 35.88 dB, and XT of -30.46dB can be obtained at 1550 nm. The fabrication tolerances are also analyzed, indicating that the insertion losses remain below 1 dB over 1460-1620 nm in terms of width errors and layer-to-layer misalignments within ±10nm. The results show that the proposed device is very suitable to utilize between fibers and for polarization diversity of on-chip systems for broadband operation as well as ultra-compact integration.

96-Channel on-chip reconfigurable optical add-drop multiplexer for multidimensional multiplexing systems

Abstract The multi-dimensional multiplexing technology is very promising for further increasing the link capacity of optical interconnects. A 96-channel silicon-based on-chip reconfigurable optical add-drop multiplexer (ROADM) is proposed and demonstrated for the first time to satisfy the demands in hybrid mode/polarization/wavelengthdivision-multiplexing systems. The present ROADM consists of a six-channel mode/polarization de-multiplexer, a 6 × 16 array of microring-resonator (MRR)-based wavelength-selective switches, and a six-channel mode/polarization multiplexer. With such a ROADM, one can add/drop optical signals to/from any channels of the multimode bus waveguide arbitrarily. For the designed and fabricated ROADM chip, there are more than 1000 elements integrated monolithically, including 96 MRRs, 576 waveguide crossings, 192 grating couplers, 96 micro-heaters, 112 pads, six polarization-splitter-rotators (PSRs), four asymmetric adiabatic couplers and four asymmetric directional couplers. For any channel added/dropped with the fabricated ROADM, the on-chip excess loss is about 5–20 dB, the inter-mode crosstalk is &lt;−12 dB, and the inter-wavelength crosstalk is &lt;−24 dB. The system experiments are demonstrated by using 10-GBaud quadrature phase shift keying (QPSK) signals, showing that the observed optical signal noise ratio (OSNR) power penalties induced by the ROADM are less than 2 dB at a BER of 3.8 × 10−3.

Dual Polarization and Bi-Directional Silicon-Photonic Optical Phased Array With Large Scanning Range

We propose a large scanning range silicon optical phased array (OPA), which is polarization multiplexed and bi-directional with only one waveguide grating antenna array. Mach-Zehnder interferometers (MZIs) and polarization splitter-rotator (PSR) are utilized to select the polarization states and propagation directions of the input light to the waveguide grating emitter array. By optimizing the parameters of the waveguide grating, the longitudinal far-field steering range is increased by four times compared to that of the conventional ones among the same wavelength range. The simulation results show that the 54.5° longitudinal scanning range could be realized with the tuning wavelength ranging from 1500 nm to 1600 nm. The high wavelength tuning efficiency is up to 0.545 °/nm. The beam steering range in the lateral direction is 77.8° via phase tuning.

Shortcut to adiabaticity in a silicon polarization splitter rotator using multi-wavelength adiabaticity engineering

We introduce adiabaticity engineering in coupled waveguide devices to achieve shortcuts to adiabaticity in multi-wavelength systems. By engineering the adiabaticity distribution using a single control parameter, we obtain large operating bandwidth in a compact device. Multi-wavelength adiabaticity engineering is applied to the design of silicon polarization splitter-rotators. The total length of the designed polarization splitter-rotator is 141 μm, and simulations show that the device exhibits extinction ratios above 28 dB and 16 dB for the TE0 and TM0 modes, respectively, with a bandwidth of 300 nm (from 1.4 μm to 1.7 μm). The fabrication tolerance of the designed device is also simulated.

Polarization-Insensitive Silicon Microring Modulator for Single Sideband Modulation

We propose and experimentally demonstrate a polarization-insensitive single sideband modulator based on silicon microring modulators (MRM). The proposed modulator splits and modulates the two orthogonal polarization states of an input laser in a loopback structure, with an on-chip silicon polarization splitter rotator (PSR), overcoming the polarization dependence of the silicon photonic modulator. The IQ configuration of the modulator enables single sideband modulation, thus improving the resistance of the modulated signal to chromatic dispersion and extending the transmission reach. The adoption of an MRM relieves the bandwidth limitation in polarization-diverse versions of SiP Mach-Zehnder modulators (MZM). Our experiments validate the proposed modulator polarization insensitivity and transmission performance.

Compact symmetric polarization rotator-splitter on InP.

Symmetric polarization rotator-splitter (PRS) is proposed and experimentally demonstrated on InP for the first time. Instead of integrating a mode-selective splitter, we employ a symmetric multimode-interference (MMI) splitter at the output of an adiabatic taper section to extract the linear superpositions of the transverse-electric (TE) and the transverse-magnetic (TM) components of the input signal. As a result, the entire device functions as a PRS with its basis on the S2-S3 plane of the Poincaré sphere, whereas we can fully eliminate complicated asymmetric structures that are challenging to fabricate on InP. Moreover, the adiabatic taper, which operates as a mode-evolution-based polarization converter, is designed judiciously to minimize the overall length. The designed InP PRS with a total length of 750 µm is fabricated by a simple single-etching process. A polarization extinction ratio of more than 16.3 dB and a polarization-dependent loss of 0.67 dB are demonstrated experimentally at a 1550-nm wavelength.