Polarization Splitter-rotator Research Articles

Thin-film lithium niobate polarization-independent modulators for mode and polarization multiplexing

We demonstrated a high-order mode modulator based on thin-film lithium niobate (TFLN). By introducing a mode converter and a polarization splitter-rotator (PSR), the modulator can achieve dual-mode modulation. Additionally, we designed a periodic capacitively loaded traveling-wave electrode on TFLN to enhance modulation efficiency and bandwidth. The modulator exhibits a polarization extinction ratio greater than 20 dB at a wavelength of 1550 nm, a modulation efficiency of V π LTE0=2.541V⋅cm and V π LTM0=2.570V⋅cm, and a 3 dB bandwidth exceeding 60 GHz. This not only meets the requirements for polarization-independent modulators but also supports on-chip multimode applications such as mode and polarization multiplexing.

High-performance and scalable polarization splitter-rotator based on photonic crystal nanobeam reflection

The polarization splitter-rotator (PSR) is a key device for polarization processing in polarization diversity systems, which has wide applications in achieving polarization independence and mixed multiplexing. However, it remains a significant challenge to simultaneously achieve a better balance in bandwidth, crosstalk (CT), polarization extinction ratio (PER), and compact footprint of the PSR. In this article, a photonic crystal nanobeam (PCN) structure is introduced to PSR for large bandwidth and compact size, with a device length of only 104 µm. Additionally, to achieve lower CT, a bridge waveguide is introduced for primary filtering. Simulation results show that the insertion loss (IL) is less than 0.55 dB, CT less than -35 dB, and PER greater than 35 dB within a bandwidth exceeding 110 nm, while maintaining a large process tolerance. Furthermore, the proposed PSR design breaks through the limitations of traditional schemes by extending its functionality effectively. To further improve integration, a novel approach to PSR using mode hybridization followed by spatial beam splitting is proposed. By controlling the phase-matching condition of various modes in different waveguides, the designed spatial beam splitting achieves lower CT and better compactness. Simulation results verify that the IL of the improved scheme is less than 1 dB, CT less than -24 dB, and PER greater than 22 dB within an 85 nm bandwidth, while reducing the overall length to less than 20 µm.

Compact polarization splitter-rotator based on lithium niobate-on-insulator platform

We propose a compact mode-coupled polarization splitter-rotator (PSR) based on the lithium niobate-on-insulator platform. The PSR is composed of an asymmetric directional coupler, a taper, and an S-bend. Cross-polarization mode coupling is achieved using a ridge waveguide and air cladding to break the symmetry of the waveguide cross section with a length of only 61 μm. Simulation results show that the insertion losses of this device in the 1500–1600 nm range are less than 1.85 and 0.31 dB for TM0 and TE0 modes, respectively, and the extinction ratios are more than 22.5 and 22.7 dB, respectively. In addition, the PSR exhibits a polarization conversion efficiency of 99.97% at 1550 nm. The proposed PSR has great potential for applications in polarization-division multiplexing transmitters and on-chip polarization controllers.

CMOS photonic integrated source of broadband polarization-entangled photons

We showcase a fully on-chip CMOS-fabricated silicon photonic integrated circuit employing a bidirectionally pumped microring and polarization splitter-rotators tailored for the generation of broadband (>9 THz), high-fidelity (90–98%) polarization-entangled photons. Spanning the optical C+L-band and producing over 116 frequency-bin pairs on a 38.4-GHz-spaced grid, this source is ideal for flex-grid wavelength-multiplexed entanglement distribution in multiuser networks.

Polarization splitter-rotator on thin film lithium niobate based on multimode interference.

Polarization splitter-rotators (PSRs) are the key elements to realize on-chip polarization manipulation. Current PSRs on thin film lithium niobate (TFLN) rely on sub-micron gaps to realize mode separation, which increases the difficulties of lithography and etching. In this paper, a PSR on TFLN based on multimode interference (MMI) is demonstrated. Mode division is achieved by an MMI-based mode demultiplexer. The minimum feature size of the PSR is 1.5 µm, which can be fabricated with low-priced i-line contact aligners. Experimental results show a polarization extinction ratio (PER) > 16 dB and an insertion loss (IL) < 1.0 dB are achieved in a wavelength range of 1530-1578 nm for TE-polarized light. And a PER > 10.0 dB and an IL <2.1 dB are achieved in a wavelength range of 1530-1569 nm for TM-polarized light. This PSR could find application in the low-cost fabrication of dual-polarization TFLN-integrated photonic devices.

Photonic Metamaterial‐Inspired Polarization Manipulating Devices on Etchless Thin Film Lithium Niobate Platform

AbstractPhotonic metamaterials interact with light at the micro–nano scale, enabling unprecedented optical manipulation capabilities, which play a key role in nonlinear optics, spin optics, negative index, and zero index materials. Recently, thin‐film lithium niobate on insulator (LNOI) has emerged as a promising platform for integrated photonics due to its unique material properties, including an excellent electro–optic effect, wide transparency window, and low waveguide losses. Metamaterial structures are promising for constructing novel integrated photonic circuit building blocks on LNOI as they can provide advantageous circuit functionality. In this work, as a proof of concept, high‐performance polarization manipulating devices including polarization splitter rotator (PSR), polarization rotator (PR), and polarizer are demonstrated using photonic metamaterials on the etchless LNOI platform by introducing a silicon nitride layer on the top of LNOI wafer as the loading material. In this way, full advantage of lithium niobate (LN) can be taken to achieve various high‐performance integrated photonic devices, while avoiding the etching of LN and simplifying the fabrication process greatly, which can bring bright prospects for achieving large‐scale lithium niobate integrated photonic circuits.

Compact and broadband silicon polarization splitter-rotator using adiabaticity engineering.

We propose and demonstrate a short and broadband silicon mode-conversion polarization splitter-rotator (PSR) consisting of a mode-conversion taper and an adiabatic coupler-based mode sorter both optimized by adiabaticity engineering (AE). AE is used to optimize the distribution of adiabaticity parameter over the length of the PSR, providing shortcut to adiabaticity at a shorter device length. The total length of the PSR is 85 µm. The design is compatible with standard silicon photonics platforms and requires only one patterning step. Fabricated PSR has a polarization cross talk of less than -20 dB over the entire O-band for the TE polarization and a polarization cross talk of less than -15 dB from 1267 to 1348 nm for the TM polarization. Overall, the PSR shows low polarization cross talk (-15 dB) over a bandwidth of 81 nm in the O-band. Cross-wafer measurements show that the PSR has good fabrication tolerance.

Low-loss integrated dynamic polarization controller based on silicon photonics

&lt;sec&gt;A dynamic polarization controller (DPC) is an important component in fiber optic communication, optical imaging, and quantum technologies. The DPC can transform any input state of polarization (SOP) into any desired SOP to overcome polarization-related impairments resulting from high internally and externally induced birefringence. In this work, a low-loss silicon photonics-integrated DPC is designed and demonstrated experimentally. The whole chip is fabricated by using industry-standard silicon-on-insulator technology. Using the edge-coupling method, the coupler loss is reduced to less than 2 dB, and the total loss of DPC is reduced to 5.7 dB. Using a variable-step simulated annealing method, for a low-noise photodetector and high-static-extinction-ratio device, a dynamic polarization extinction ratio can reach more than 30 dB. The size of the DPC on the chip is 5.20 mm × 0.12 mm × 0.80 mm.&lt;/sec&gt;&lt;sec&gt;The DPC utilizes a 0°/45°/0°/45° structure, which can realize arbitrary polarization-based coordinate conversion with endless polarization control. The 0° and 45° transform structures and matrices are presented, and the principle of the 0° and 45° structures is explained in detail by using the Poincaré sphere.&lt;/sec&gt;&lt;sec&gt;A simulation using Lumerical is conducted to optimize the polarization rotator-splitter, which can transform the TM&lt;sub&gt;0&lt;/sub&gt; mode light in one waveguide into the TE&lt;sub&gt;0&lt;/sub&gt; mode light in the other waveguide while the TE&lt;sub&gt;0&lt;/sub&gt; mode light in one waveguide remains unchanged. Based on the optimized structure, the static polarization extinction ratio of DPC can be measured to be a value greater than 40 dB.&lt;/sec&gt;&lt;sec&gt;The thermal phase shift (TPS) is characterized by using a Mach–Zehnder modulator. The length of the TPS is 400 μm, and the resistance of the metal heater is 2.00 kΩ. The maximum power consumed by the four TPSs is a total of 0.2 W. The modulation bandwidth of the DPC designed by our group is approximately 30 kHz. By considering an applied voltage of 5.6 V in the case of the TPS, the bandwidth–voltage product is 5.6 × 30 = 168 kHz·V.&lt;/sec&gt;&lt;sec&gt;To optimize the DPC parameters, such as the step length, electronic noise, and static polarization extinction ratio, numerical simulation results of the simulated annealing approach are analyzed in detail.&lt;/sec&gt;&lt;sec&gt;In conclusion, a low-loss silicon photonics-integrated DPC is designed and demonstrated experimentally. A dynamic polarization extinction ratio is obtained to be greater than 30 dB by using the variable-step simulated annealing method. The DPC is expected to be utilized in fiber or quantum communication systems to minimize size and further decrease costs.&lt;/sec&gt;

Low-loss integrated dynamic polarization controller based on silicon photonics

&lt;sec&gt;A dynamic polarization controller (DPC) is an important component in fiber optic communication, optical imaging, and quantum technologies. The DPC can transform any input state of polarization (SOP) into any desired SOP to overcome polarization-related impairments resulting from high internally and externally induced birefringence. In this work, a low-loss silicon photonics-integrated DPC is designed and demonstrated experimentally. The whole chip is fabricated by using industry-standard silicon-on-insulator technology. Using the butting coupling method, the coupler loss is reduced to less than 2 dB, and the total loss of DPC is reduced to 5.7 dB. Using a variable-step simulated annealing method, for a low-noise photodetector and high-static-extinction-ratio device, a dynamic polarization extinction ratio can reach more than 30 dB. The size of the DPC on the chip is 5.20 mm × 0.12 mm × 0.80 mm.&lt;/sec&gt;&lt;sec&gt;The DPC utilizes a 0°/45°/0°/45° structure, which can realize arbitrary polarization-based coordinate conversion with endless polarization control. The 0° and 45° transform structures and matrices are presented, and the principle of the 0° and 45° structures is explained in detail by using the Poincaré sphere.&lt;/sec&gt;&lt;sec&gt;A simulation using Lumerical is conducted to optimize the polarization rotator-splitter, which can transform the TM&lt;sub&gt;0&lt;/sub&gt; mode light in one waveguide into the TE&lt;sub&gt;0&lt;/sub&gt; mode light in the other waveguide while the TE&lt;sub&gt;0&lt;/sub&gt; mode light in one waveguide remains unchanged. Based on the optimized structure, the static polarization extinction ratio of DPC can be measured to be a value greater than 40 dB.&lt;/sec&gt;&lt;sec&gt;The thermal phase shift (TPS) is characterized by using a Mach–Zehnder modulator. The length of the TPS is 400 μm, and the resistance of the metal heater is 2.00 kΩ. The maximum power consumed by the four TPSs is a total of 0.2 W. The modulation bandwidth of the DPC designed by our group is approximately 30 kHz. By considering an applied voltage of 5.6 V in the case of the TPS, the bandwidth–voltage product is 5.6 × 30 = 168 kHz·V.&lt;/sec&gt;&lt;sec&gt;To optimize the DPC parameters, such as the step length, electronic noise, and static polarization extinction ratio, numerical simulation results of the simulated annealing approach are analyzed in detail.&lt;/sec&gt;&lt;sec&gt;In conclusion, a low-loss silicon photonics-integrated DPC is designed and demonstrated experimentally. A dynamic polarization extinction ratio is obtained to be greater than 30 dB by using the variable-step simulated annealing method. The DPC is expected to be utilized in fiber or quantum communication systems to minimize size and further decrease costs.&lt;/sec&gt;

Polarization multiplexing silicon photonic optical phased array with a wide scanning range.

We propose and experimentally demonstrate a polarization multiplexed silicon optical phased array (OPA) with a wide scanning range. The two polarization states share the same power splitter tree and the phase shifter array. A polarization switch is introduced in front of the power splitter tree to manipulate the polarization state of the light in OPA. Through a polarization splitter-rotator (PSR), the light of two polarization states propagates into the superlattice grating antenna array. The wavelength tuning efficiency could be doubled by optimizing the parameters of the waveguide grating. We demonstrate the scheme on the commonly used 220 nm silicon-on-insulator (SOI) platform. Experimental results indicate that the 24.8° vertical scanning range could be realized with a high wavelength tuning efficiency of 0.31°/nm. The measured field of view (FOV) is 24.8 × 60°.

Silicon-Nanowire-Type Polarization-Diversified CWDM Demultiplexer for Low Polarization Crosstalk.

Coarse wavelength division multiplexing (CWDM)-targeted novel silicon (Si)-nanowire-type polarization-diversified optical demultiplexers were numerically analyzed and experimentally verified. The optical demultiplexer comprised a hybrid mode conversion-type polarization splitter rotator (PSR) and a delayed Mach-Zehnder interferometric demultiplexer. Si-nanowire-based devices were fabricated using a commercially available Si photonics foundry process, exhibiting nearly identical spectral responses regardless of the polarization states of the input signals under the PSR. The experiment demonstrated a low insertion loss of 1.0 dB and a polarization-dependent loss of 1.0 dB, effectively suppressing spectral crosstalk from other channels by less than -15 dB. Furthermore, a TM-mode rejection-filter-integrated optical demultiplexer was designed and experimentally validated to mitigate unwanted TM-mode-related polarization crosstalk that arose from the PSR. It exhibited an improved polarization crosstalk rejection efficiency of -25 dB to -50 dB within the whole CWDM spectral range.

Fully adiabatic polarization rotator-splitter based on thin-film lithium niobate platform.

A Polarization Rotator-Splitter (PRS) based on thin-film lithium niobate (TFLN) is demonstrated in this work. The PRS consists of a partially etched polarization rotating taper and an adiabatic coupler, which enables the input TE0 and TM0 to be output as TE0 from two ports, respectively. The fabricated PRS using standard i-line photolithography achieved large polarization extinction ratios (PERs) of > 20 dB across the whole C-band. Excellent polarization characteristics are maintained when the width is changed by ±150 nm. The on-chip insertion losses of TE0 and TM0 are less than 1.5 dB and 1 dB, respectively.

Silicon-based decoder for polarization-encoding quantum key distribution

Silicon-based polarization-encoding quantum key distribution (QKD) has been widely studied, owing to its low cost and robustness. However, prior studies have utilized off-chip devices to demodulate the quantum states or perform polarization compensation, given the difficulty of fabricating polarized independent components on the chip. In this paper we propose a fully chip-based decoder for polarization-encoding QKD. The chip realizes a polarization state analyzer and compensates for the BB84 protocol without requiring additional hardware. It is based on a polarization-to-path conversion method that uses a polarization splitter-rotator. The chip was fabricated using a standard silicon photonics foundry; it has a compact design and is suitable for mass production. In the experimental stability test, an average quantum bit error rate of 0.59% was achieved through continuous operation for 10 h without any polarization feedback. Furthermore, using the developed feedback algorithm, the chip enabled the automatic compensation of the fiber polarization drift, which was emulated by a random fiber polarization scrambler. In the case of the QKD demonstration, we obtained a finite-key secret rate of 240 bps over a fiber spool of 100 km. This study represents an important step toward the integrated, practical, and large-scale deployment of QKD systems.

Broadband polarization splitter-rotator on a thin-film lithium niobate with conversion-enhanced adiabatic tapers.

In this work, we propose and experimentally demonstrate a broadband polarization splitter-rotator (PSR) on the lithium niobate on insulator (LNOI). With multiple sequentially connected adiabatic tapers for waveguide mode conversion and directional coupling, the PSR shows a 160-nm bandwidth covering the C and L bands, an insertion loss of less than 2 dB, and an extinction ratio of more than 11 dB. Benefiting from the conversion-enhanced adiabatic tapers, the broadband device has a short length of 405 µm. Further optimization is performed to reduce the device length to 271 µm and comparable performances are achieved, demonstrating the feasibility of higher device compactness. The proposed design and principle can contribute to high-performance polarization management for integrated lithium niobate photonics.

Broadband Polarization Splitter-Rotator on Lithium Niobate-on-Insulator Platform

Polarization splitter-rotators (PSRs) are crucial components for controlling the polarization states of light in polarization-division multiplexing systems. However, current PSRs on the lithium niobate-on-insulator (LNOI) platform suffer from fabrication difficulty in high-precision shallow-etching and minimal feature size. In this letter, a large-bandwidth PSR is proposed based on LNOI strip-waveguide which only requires a single full etching step. The device is composed of an adiabatic taper, a Y-splitter, and a multi-mode interferometer. The minimal feature size is larger than 500 nm, which greatly reduces the difficulty of etching. Experimental results show that the insertion loss of such PSR is less than 1.5 dB with a polarization extinction ratio (PER) of more than 20 dB in a wide wavelength range of 1514–1640 nm for the TE0 mode. Additionally, a PER of 10 dB over 47 nm bandwidth (1502-1549 nm) for the TM0 mode is also demonstrated with our device. This LNOI-based PSR is promising in on-chip polarization-division multiplexing optical transmissions.

On-chip converter of waveguide polarization mode to free-space optical angular momentum mode

An integrated photonic device for converting on-chip waveguide modes to free-space optical angular momentum beams is proposed, which is composed of a polarization splitter rotator and a waveguide surface holographic grating. The output orbital angular momentum (OAM) state can be manipulated by the input polarization state. Therefore, the superposition of OAM states can be realized by controlling the on-chip input. According to the numerical results, the conversion efficiency of the transverse-magnetic (transverse-electric) mode to the optical angular momentum mode with l=−1(+1) is above 14% (18%), with the highest fidelity up to 0.84 and a working bandwidth of approximately 40 nm for a fidelity above 0.8. The proposed device provides a feasible information channel between the integrated optics and the free space and holds the potential for applications including the on-chip detection of the optical angular momentum beam.

Inverse-Designed Ultra-Compact Polarization Splitter–Rotator in Standard Silicon Photonic Platforms With Large Fabrication Tolerance

Polarization splitter-rotators (PSRs) are crucial components for controlling the polarization states of the input light in photonic integrated circuits. In this paper, we designed, fabricated and characterized a high-performance CMOS-compatible O-band PSR based on silicon-on-insulator (SOI) platform by using inverse design technique. The PSR mainly consists of a polarization rotator designed by our new proposed bi-level shape adjoint method and a mode demultiplexer designed by topology adjoint method. The device robustness against fabrication errors is significantly strengthened by properly designing optimization strategies. The proposed PSR displays a low insertion loss (<1 dB) and low crosstalk (<−20 dB) within a bandwidth of 50 nm by measurements. The device footprint is 3 × 17 μm, making this the smallest PSR based on standard silicon photonic platforms with no extra layers or an air cladding.

Ultracompact Polarization Splitter–Rotator Based on Shallowly Etched Subwavelength Gratings and Anisotropic Metasurfaces

Polarization splitter–rotators (PSRs) are an essential component in on-chip polarization-sensitive and polarization–division multiplexing systems. In this work, we propose an ultracompact and high-performance silicon-based polarization splitter–rotator utilizing anisotropic metasurfaces, which is the first to combine the two, to our knowledge. The tilted periodic metasurface structure has different modulation effects on different polarized light fields, such as the transverse–electric (TE) mode and the transverse–magnetic (TM) mode, which are beneficial for designing polarization management devices. According to the results, the entire length of the silicon PSR was ~13.5 μm. The TE-to-TM conversion loss and polarization conversion ratio ere −0.154 dB and 96.5% at 1.55 μm, respectively. In the meanwhile, the cross talk and reflection loss were −27.0 dB and −37.3 dB, when the fundamental TE mode was input. The insertion loss and cross talk were −0.19 dB and −25.01 dB at the central wavelength when the fundamental TM mode was input. In addition, the bandwidth reached up to ~112 nm with polarization conversion loss and insertion loss higher than −0.46 dB and −0.36 dB. The simulations also show that the designed devices had good fabrication tolerance.

Fabrication tolerant and broadband polarization splitter-rotator based on adiabatic mode evolution on thin-film lithium niobate

A polarization splitter-rotator device can facilitate on-chip polarization-division multiplexing to enhance the transmission data rate. Here, we propose and experimentally demonstrate a polarization splitter-rotator based on adiabatic mode evolution on the thin-film lithium niobate platform. The measured results for a fabricated device show low insertion losses of <-0.5 dB and large extinction ratios of >20 dB over the 110-nm band. Large fabrication tolerance is also demonstrated with extinction ratios of >15 dB in the wavelength range of 1465-1630 nm for a waveguide width variation of 80 nm.

Broadband ultra-compact polarization splitter-rotator using diagonally overlapped bi-layer architecture.

A broadband and ultra-compact polarization splitter-rotator based on diagonally overlapped bi-layer architecture and an asymmetrical directional coupler is proposed on a silicon-on-insulator platform. By leveraging the structure over supermode theory, a 1-dB bandwidth of 220 nm, extinction ratio (ER) of <19dB, and cross talk (XT) of <-15.85dB within the span of 1400-1700 nm and coupling length of 4.62 µm are achieved. In addition, TM0-TE0 conversion loss of ∼0.19dB, ER of 35.88 dB, and XT of -30.46dB can be obtained at 1550 nm. The fabrication tolerances are also analyzed, indicating that the insertion losses remain below 1 dB over 1460-1620 nm in terms of width errors and layer-to-layer misalignments within ±10nm. The results show that the proposed device is very suitable to utilize between fibers and for polarization diversity of on-chip systems for broadband operation as well as ultra-compact integration.