PMN PT Research Articles

Electrophysical Properties of the PMN⁻PT⁻PS Solid Solution.

The (1 − y) ((1 − x)Pb(Mg1/3Nb2/3)O3–xPbTiO3)–yPbSnO3 solid solution (PMN–PT–PS) was obtained and investigated in the present paper. For the analysis of the influence of the PbSnO3 component on the electrophysical parameters, the compositions from the rhombohedral phase, tetragonal phase, and a mixture of these phases were selected. The six compositions of the PMN–PT have been obtained using sol–gel methods (for values of x equal to 0.25, 0.28, 0.31, 0.34, 0.37, and 0.40). The ceramic samples of the 0.9(PMN–PT)–0.1(PS) solid solution have been obtained using the conventional ceramic route. X-ray diffraction (XRD), energy dispersive spectrometry (EDS), and microstructure measurements were performed, as well as tests regarding the dielectric, ferroelectric, piezoelectric properties and electric conductivity of the PMN–PT–PS ceramic samples versus temperature. Results of the measurements show that the obtained PMN–PT–PS materials have good electrophysical properties and are well suited for use in micromechatronic and microelectronic applications.

Structure analysis and systematical electric properties investigation of PSN–PMN–PT single crystal

A novel Pb(Sc1/2Nb1/2)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 (PSN–PMN–PT) single crystal with large size ϕ25 mm × 40 mm was grown by the Bridgman technique. The crystal was cut along [100] orientation with composition of 6PSN–63PMN–31PT, and then its structure and electric properties were investigated systematically. Raman test demonstrates that the crystal is typical relaxor ferroelectrics with perovskite structure. At room temperature, [100]-oriented 6PSN–63PMN–31PT crystal shows the excellent electric properties, such as the dielectric constant er = 4793, the piezoelectric constant d33 = 1237 pC/N, and the remanent polarization Pr = 34.41 µC/cm2, respectively. It is more important that the large coercive field Ec = 8.17 kV/cm in [100]-oriented 6PSN–63PMN–31PT crystal is almost four times than that of PMN–PT, even higher than that of Pb(In1/2Nb1/2)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 (PIN–PMN–PT) and Pb(Lu1/2Nb1/2)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 (PLN–PMN–PT), indicating its potential application for high-power transducers. With elevating temperature, the [100]-oriented 6PSN–63PMN–31PT crystal shows the large pyroelectric coefficient p = 3.49 × 10−2 C/m2/K at phase transition temperature, and the related figures of merit (FOMs) for current responsivity Fi, for voltage responsivity Fv and for detectivity FD increase from 1.968 × 10−10 m/V, 0.00485 m2/C and 0.59 × 10−5 Pa−1/2 to 1.396 × 10−8 m/V, 0.054 m2/C, and 52.94 × 10−5 Pa−1/2, respectively. Furthermore, the thermal strain at heating process was analyzed for unpoled and poled crystal.

Thickness and temperature dependences of dielectric properties of {111}-oriented epitaxial Pb(Mg1/3Nb2/3)O3 and 0.6Pb(Mg1/3Nb2/3)O3–0.4PbTiO3 films

The effects of film thickness and composition on crystal structure and dielectric properties were investigated for {111}-oriented epitaxial Pb(Mg1/3Nb2/3)O3 (PMN) and 0.6Pb(Mg1/3Nb2/3)O3–0.4PbTiO3 (0.6PMN–0.4PT) films of various thicknesses grown on (111)cSrRuO3//(111)SrTiO3 substrates by pulsed metal organic chemical vapor deposition (MOCVD). When the film thickness of {111}-oriented PMN films increased from 500 to 1300 nm, the relative dielectric constant at room temperature increased from 1600 to 2800 at 10 kHz. This tendency was similar to our previous result for {100}-oriented PMN films. On the other hand, the relative dielectric constant at room temperature slightly increased from 2500 to 2700 at 10 kHz with the increase in film thickness from 750 to 2500 nm in the case of {111}-oriented 0.6PMN–0.4PT films. PMN films show strong frequency dependences of maximum relative dielectric constant against temperature, εr(max), and the temperature of εr(max), T(max), together with a strong thickness dependence. On the other hand, 0.6PMN–0.4PT films show small frequency dependences of εr(max) and T(max) together with a small film thickness dependence. These results show a strong film composition dependence of the dielectric properties of the films in a PMN–PT system such as frequency and thickness.

Magnetic properties of L10 FePt thin film influenced by recoverable strains stemmed from the polarization of Pb(Mg1/3Nb2/3)O3–PbTiO3 substrate**Project supported by the National Natural Science Foundation of China (Grant Nos. 11474167, 51701091, and 11504020) and the Start-up Funds of NUIST, China (Grant Nos. 2243141601035 and 2243141601018).

The magnetic properties and magnetization reversible processes of L10 FePt (3 nm)/Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN–PT) heterostructure were investigated by using the phase field model. The simulation results show that the magnetic coercivities and magnetic domains evolution in the L10 FePt thin film are significantly influenced by the compressive strains stemming from the polarization of single crystal PMN–PT substrate under an applied electric field. It is found that the magnetic coercivities increase with increasing of the compressive strain. A large compressive strain is beneficial to aligning the magnetic moments along the out-of-plane direction and to the enhancement of perpendicular magnetic anisotropy. The variations of magnetic energy densities show that when compressive strains are different at the magnetization reversible processes, the magnetic anisotropy energies and the magnetic exchange energies firstly increase and then decrease, the negative demagnetization energy peaks appear at coercivities fields, and the magnetoelastic energies are invariable at large external magnetic field with the energy maximum appearing at coercivities fields. The variations of the magnetoelastic energies bring about the perpendicular magnetic anisotropy so that the magnetoelastic energy is lower at the large external magnetic fields, whereas the appearance of magnetoelastic energy peaks is due to the magnetization-altered direction from the normal direction of the plane of the L10 FePt thin film at coercivities fields.

Preparation and characterization of Pb(Lu1/2Nb1/2)O3–Pb(In1/2Nb1/2)O3–PbTiO3 ternary ferroelectric ceramics with high phase transition temperatures

AbstractTo explore new relaxor‐PbTiO3 systems for high‐power and high‐temperature electromechanical applications, a ternary ferroelectric ceramic system of Pb(Lu1/2Nb1/2)O3–Pb(In1/2Nb1/2)O3–PbTiO3 (PLN–PIN–PT) have been investigated. The phase structure, dielectric, piezoelectric, and ferroelectric properties of the as‐prepared PLN–PIN–PT ceramics near the morphotropic phase boundary (MPB) were characterized. A high rhombohedral‐tetragonal phase transition temperature TR‐T of 165°C and a high Curie temperature TC of 345°C, together with a good piezoelectric coefficient d33 of 420 pC/N, were obtained in 0.38PLN–0.20PIN–0.42PT ceramics. Furthermore, for (0.8−x)PLN–0.2PIN–xPT ceramics, the temperature‐dependent piezoelectric coefficients, coercive fields and electric‐field‐induced strains were further studied. At 175°C, their coercive fields were found to be above 9.5 kV/cm, which is higher than that of PMN–PT and soft P5H ceramics at room temperature, indicating PLN–PIN–PT ceramics to be one of the promising candidates in piezoelectric applications under high‐driven fields. The results presented here could benefit the development of relaxor‐PbTiO3 with enhanced phase transition temperatures and coercive fields.

Influence of composition ratio on ferroelectric, magnetic and magnetoelectric properties of PMN–PT/CFO composite thin films

Multiferroic 0.68Pb(Mg1/3Nb2/3)O3–0.32PbTiO3/CoFe2O4 (PMN–PT/CFO) composite films have been grown on Pt/Ti/SiO2/Si substrate via sol–gel spin-coating technique. PMN–PT and CFO precursor solutions were mixed before the spin-coating process to optimize the interface interaction. We investigated the influence of the composition ratio and annealing process on the property of the multiferroic PMN–PT/CFO composite films. The films which entirely consist of PMN–PT and CFO phases have a good performance in the ferroelectric, ferromagnetic property and direct magnetoelectric coupling effect when they were annealed at 730 °C and air atmosphere. It was obviously noticed that the composition ratio between PMN–PT and CFO has an effect on the properties of PMN–PT/CFO multiferroic composites.

Electric-regulated enhanced in-plane uniaxial anisotropy in FeGa/PMN–PT composite using oblique pulsed laser deposition

The FeGa film with in-plane uniaxial magnetic anisotropy was fabricated onto different oriented single-crystal lead magnesium niobate–lead titanate using oblique pulsed laser deposition. An enhanced in-plane uniaxial magnetic anisotropy field of FeGa film can be adjusted from 18 Oe to 275 Oe by tuning the oblique angle and polarizing voltage. The competitive relationship of shape anisotropy and strain anisotropy has been discussed, which was induced by oblique angle and polarizing voltage, respectively. The (100)-oriented and (110)-oriented PMN–PT show completely different characters on voltage-dependent magnetic properties, which could be attributed to various anisotropy directions depended on different strain directions.

Optical properties of Mn-doped 0.15Pb(In1/2Nb1/2)O3–0.57Pb(Mg1/3Nb2/3)O3–0.28PbTiO3 single crystal

The refractive indices, extinction coefficients, and transmittance of 1 mol% Mn-doped 0.15Pb(In1/2Nb1/2)O3–0.57Pb(Mg1/3Nb2/3)O3–0.28PbTiO3 (Mn-PIN–PMN–PT) relaxor-based single crystal were investigated. The Mn-PIN–PMN–PT single crystal exhibited a rhombohedral to tetragonal phase transition temperature Trt of 120.3 °C and Curie temperature TC of 152.4 °C. The improved Sellmeier equation for the refractive index was determined by least-squares method, which can be applied to calculate accurately the refractive index over a wide wavelength range from 350 to 5000 nm. The Sellmeier optical coefficients were found to be S0 = 1.178 × 1014 m−2, λ0 = 0.215 µm, E0 = 6.06 eV and Ed = 28.73 eV through fitting the single-term oscillator equation. The transmittance reached about 72% over a wide wavelength from 500 nm to 2.5 µm. The optical band-gap energy Eg of 3.34 eV was obtained from absorption coefficient spectra by use of the Tauc model. The results can offer essential parameters of the Mn-PIN–PMN–PT single crystal for optical device applications.

Texture-engineered ceramics—Property enhancements through crystallographic tailoring – CORRIGENDUM

doi: https://doi.org/10.1557/jmr.2017.207, Published by Cambridge University Press, 27 June 2017 In Messing et al.1, the compound Pb(Yb1/2Nb1/2)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 was incorrectly abbreviated on page 10. The sentence reading “Similar to PIN–PMN–PT, [001]c textured PIN–PMN–PT ceramics with f(00l) of 0.91 show a high level of strain (0.33%) and a higher Tc of 214 °C” should say, “Similar to PIN–PMN–PT, [001]c textured PYN–PMN–PT ceramics with f(00l) of 0.91 show a high level of strain (0.33%) and a higher Tc of 214 °C.” The authors apologize for this error.

Synthesis and properties of La-doped PMN–PT transparent ferroelectric ceramics

Transparent ferroelectric ceramics 0.88Pb(Mg1/3Nb2/3)O3–0.12PbTiO3 (0.88PMN–0.12PT) with different La-doping concentrations (0.5, 1.0, 1.5 and 2.0 mol%) were fabricated via solid-state reaction and two-stage sintering. The effects of La-doping on the microstructure and electrical properties of the 0.88PMN–0.12PT ceramics were investigated. All the La-doped 0.88PMN–0.12PT ceramics exhibit pure perovskite phase with extremely dense microstructure and high optical transmittance. Among them, the 1.0 mol% La-doped ceramics show the highest transparency around 70% in near-infrared region, which is very close to its theoretical transmittance and basically meet the requirement on the transparency of electro-optical applications. The remanent polarization Pr, coercive field Ec, emax, the temperatures Temax corresponding to emax of the 0.88PMN–0.12PT ceramics decreased, and the relaxor behavior enhanced apparently with increasing La-doping concentration, which may ascribe to the fact that the substitution of Pb2+ ions by La3+ions reduces the long-range coupling of BO6 octahedrons.

Dielectric Anomalies and Competing Magnetic Interactions in NiFe2O4–PMN–PT Nanocomposite Materials

We report on dielectric anomalies, competing magnetic interactions and relaxor ferroelectric behaviors of xPMN–PT–(1 – x)NiFe2O4 (x = 0.2 and 0.4) nanocomposites. The crystal structure and surface morphology of the pure and composite nanomaterials were examined by X-ray diffraction (XRD), transmission electron microscopy (TEM) and scanning electron microscopy (SEM). Phase formation and purity of the NiFe2O4, PMN–PT and the composites were confirmed from XRD measurements. Uniformly distributed nanoparticles and nanowires and the presence of Ni, Fe, O, Pb, Nb, Mg, and Ti in NiFe2O4 and PMN–PT are confirmed from FESEM and energy dispersive X-ray (EDX) measurements. Structural disordering due to phase transition around 453 K in both composites was examined from temperature variation Raman studies. Magnetization measurements at room temperature and at 40 K, zero field cooled (ZFC) and field cooled (FC) magnetization measurements for both composites were carried out from 2 to 350 K. Competing magnetic interacti...

Enhanced pyroelectric property of PMN–PT/P[VDF–TrFE] thick film by optimizing poling temperature

Lead magnesium niobate–lead titanate (PMN–PT) ceramic powder and Poly[VinyliDeneFluoride-co-TriFluoroEthylene] (P[VDF–TrFE]) have been used to fabricate 0–3 composites thick films on ITO substrates by tape casting. The phase structure and grain size of PMN–PT were analyzed by XRD and SEM. The distribution of ceramic powder in polymer matrix was characterized by SEM. In order to find out the optimal poling temperature, dielectric-temperature spectrums of the composite films were measured to calculate the electric field applied to the ceramic phase (Ec). Finally, PMN–PT/P[VDF–TrFE] composite films were polarized by one-step polarization under optimized polarization temperature and their pyroelectric constant were compared with these of samples poled using conventional two-step polarization method. The results showed that the pyroelectric coefficient increases to 58.6 μC m−2 K−1 at a ceramic mass fraction of 55% at the optimized polarizing temperature 110 °C.

Strain-mediated magnetoelectric effect for the electric-field control of magnetic states in nanomagnets

Electric-field control of magnetism without electric currents potentially revolutionizes spintronics toward ultralow power. Here, by using mechanically coupled phase field simulations, we computationally demonstrate the application of the strain-mediated magnetoelectric effect for the electric-field control of magnetic states in a heterostructure. In the model heterostructure constituted of the soft nanomagnet Co and the piezoelectric substrate PMN–PT, both the volatility of magnetic states and the magnetization switching dynamics excited by the electric field are explored. It is found that an electric field can drive the single-domain nanomagnet into an equilibrium vortex state. The nanomagnet remains in the vortex state even after removing the electric field or applying a reverse electric field, i.e., the vortex state is extremely stable and nonvolatile. Only by utilizing the precessional magnetization dynamics, the 180 $$^\circ $$ magnetization switching is possible in small-sized nanomagnets which are free of the stable vortex state. Electric-field pulses can realize the deterministic 180 $$^\circ $$ switching if the electric-field magnitude, pulse width, and ramp time are carefully designed. The minimum switching time is found to be less than 10 ns. These results provide useful information for the design of low-power, reliable, and fast electric-field-controlled spintronics.

High temperature‐insensitive ferro‐/piezoelectric properties and nanodomain structures of Pb(In1/2Nb1/2)O3–PbZrO3–Pb(Mg1/3Nb2/3)O3–PbTiO3 relaxor single crystals

AbstractFor rhombohedral (R) Pb(In1/2Nb1/2)O3–PbZrO3–Pb(Mg1/3Nb2/3)O3–PbTiO3 (PIN–PZ–PMN–PT) relaxor single crystal, high temperature‐insensitive behaviors under different external stimuli were observed (remnant polarization Pr from 30°C to 180°C and piezoelectric strain d33* from 30°C to 116°C). When electric field E ≥ 50 kV/cm in the case of an activation field Ea = 40‐50 kV/cm was applied, it was found that the domain switching was accompanied by a phase transition. The high relaxor nature of the R phase PIN–PZ–PMN–PT was speculated to account for the large Ea and high piezoelectric response. The short‐range correlation lengths extracted from the out‐of‐plane (OP) and in‐plane (IP) nanodomain images, were 64 nm and 89 nm, respectively, which proved the high relaxor nature due to In3+ and Zr4+ ions entering the B‐site in the ABO3‐lattice and enhancing the disorder of B‐site cations in the R phase PIN–PZ–PMN–PT. The switching process of R nanodomain variants under the step‐increased tip DC voltage was visually revealed. Moreover, the time‐dependent domain evolution confirmed the high relaxor nature of the R phase PIN–PZ–PMN–PT single crystal.

Comparison of PMN–PT transparent ceramics processed by three different sintering methods

La-doped 0.75Pb(Mg1/3Nb2/3)O3–0.25PbTiO3 (PMN–PT) transparent ceramics were fabricated by uniaxial hot-pressing sintering, oxygen atmosphere sintering and two-stage sintering technology, respectively. PMN–PT ceramics fabricated by two-stage sintering method show the best densification and highest transparency. Its optical transmittance reaches to 70% at 900 nm which is very close to its theoretical transmittance 71%. The temperature dependent dielectric properties and P–E hysteresis loops of these three ceramics show that they all exhibit relaxor characteristics. Effects of sintering methods on the dielectric and ferroelectric properties, diffusivity coefficient, and polarization current density were investigated.

Improvement in dielectric, piezoelectric and ferroelectric properties of 0.64PMN–0.36PT ceramics by Sb modification

Pure and Sb-doped 0.64PMN–0.36PT (PMN–PT) ceramics near MPB have been prepared using columbite precursor technique. The effects of Sb-doping on microstructure and electrical properties were studied systematically. Powder XRD and SEM exhibited the formation of pure perovskite phase with homogeneous microstructure. As compared to the pure PMN–PT ceramics, enhanced dielectric constant, and reduced transition temperature (Tm) and dielectric loss (tan δ) were observed for Sb-doped PMN–PT ceramics. Displacement–Voltage (D–V) butterfly hysteresis loops and quasi-static d33 meter revealed a higher value of piezoelectric charge coefficient (d33) for Sb-doped sample (644 pm/V and 551 pC/N) as compared to pure ceramic (435 pm/V and 410 pC/N). P–E hysteresis curves showed improved ferroelectric properties after Sb doping. A high value of pyroelectric coefficient (p ∼ −1170.4 µC m−2 °C−1) for Sb-doped PMN–PT ceramic was obtained. Sb-doped PMN–PT ceramic showed an excellent anti-fatigue nature over 107 switching cycles. Small leakage current was evident from J–E analysis for both the ceramics. Therefore, Sb-doped PMN–PT ceramic proved to be a better choice for applications in the electronic ceramic industries.

Experimental Demonstration of Complete 180° Reversal of Magnetization in Isolated Co Nanomagnets on a PMN-PT Substrate with Voltage Generated Strain.

Rotating the magnetization of a shape anisotropic magnetostrictive nanomagnet with voltage-generated stress/strain dissipates much less energy than most other magnetization rotation schemes, but its application to writing bits in nonvolatile magnetic memory has been hindered by the fundamental inability of stress/strain to rotate magnetization by full 180°. Normally, stress/strain can rotate the magnetization of a shape anisotropic elliptical nanomagnet by only up to 90°, resulting in incomplete magnetization reversal. Recently, we predicted that applying uniaxial stress sequentially along two different axes that are not collinear with the major or minor axis of the elliptical nanomagnet will rotate the magnetization by full 180°. Here, we demonstrate this complete 180° rotation in elliptical Co nanomagnets (fabricated on a piezoelectric substrate) at room temperature. The two stresses are generated by sequentially applying voltages to two pairs of shorted electrodes placed on the substrate such that the line joining the centers of the electrodes in one pair intersects the major axis of a nanomagnet at ∼ +30° and the line joining the centers of the electrodes in the other pair intersects at ∼ -30°. A finite element analysis has been performed to determine the stress distribution underneath the nanomagnets when one or both pairs of electrodes are activated, and this has been approximately incorporated into a micromagnetic simulation of magnetization dynamics to confirm that the generated stress can produce the observed magnetization rotations. This result portends an extremely energy-efficient nonvolatile "straintronic" memory technology predicated on writing bits in nanomagnets with electrically generated stress.

Mechanisms of DC conduction in smart PMN–PT/paint nanocomposite films

Understanding conduction mechanisms in dielectric films are critical to their successful applications in devices. DC conduction mechanisms in lead magnesium niobate–lead titanate (0.67Pb (Mg1/3Nb2/3)O3–0.33PbTiO3)/Paint nanocomposite (PMN–PT/Paint) films are presented and discussed. The conventional cost-effective paint brushing technique was utilized to fabricate PMN–PT/paint nanocomposite films on copper substrate. Atomic force microscopy (AFM) has been recognized as one of the most powerful techniques for the analysis of surface morphologies because it creates 3D images at angstrom and nano scale. It has been exhaustively utilized in the analysis of dispersion of nano-metric components in nanocomposites and polymer blends. Thus, AFM analysis is applied in the present work for the surface morphological and dispersion of nanoparticles investigations in paint-based nanocomposites at different loading of PMN–PT nanoparticles. It is found that the PMN–PT nanoparticles are dispersed uniformly inside the paint matrix. The spatial distribution of PMN–PT in PMN–PT/Paint films is denser with higher PMN–PT content sample. A metal–insulator–metal capacitor was fabricated and the leakage current across was measured with varying voltage and temperature. The governing conduction mechanisms were examined and depicted. The activation energy of nanocomposite films fabricated with 2.5 and 8.98 wt% PMN–PT nanoparticles in the paint mixture are found to be 1.08 and 1.24 eV, respectively. The DC activation energy for former was found to be slightly lower then later and follow the Arrhenius relationship. Thus, showing the conduction was electronic and thermally activated.

Pb(In1/2Nb1/2)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 Piezoelectric Single-Crystal Rectangular Beams: Mode-Coupling Effect and Its Application to Ultrasonic Array Transducers

Pb(In1/2Nb1/2)O3–Pb(Mg1/3Nb2/3)O3–PbTiO3 (PIN–PMN–PT) piezoelectric single-crystal rectangular beams with the PIN:PMN:PT ratio of 0.33:0.35:0.32 are prepared, and their mode-coupling effect is investigated both theoretically and experimentally for ultrasonic array transducer applications. The PIN–PMN–PT rectangular beams become a tall-narrow beam and a short-wide plate, and so exhibiting an uncoupled height-extensional (beam) mode and an uncoupled thickness-extensional (plate) mode, at a width-to-height ratio G (= L / H) of 6.0, respectively. With G varying in the range of 1.6 to 3.1, the beam mode not only couples strongly with the width (lateral) mode, but also coexists obviously with the plate mode, giving high electromechanical coupling coefficients k_33^' and k_t of ~0.75 and ~0.50, respectively. With the guide of the mode-coupling results, a multifrequency ultrasonic array transducer having three distinct operational frequencies of 1.52, 2.60, and 6.01 MHz, corresponding to the coupled/coexistent beam mode, lateral mode, and plate mode, respectively, is developed using a mode-coupled rectangular beam of G = 1.6. Two different single-frequency ultrasonic array transducers, fabricated using two different uncoupled rectangular beams, one operating in uncoupled beam mode with G = 0.6 at 2.24 MHz and one working in uncoupled plate mode with G = 10.0 at 5.75 MHz, are also developed for comparison.

Piezoelectric energy harvesting from a PMN–PT single nanowire

A piezoelectric PMN–PT single nanowire connected to an electrode-patterned plastic substrate using FIB deposition is characterized under mechanical bending.