With a scaling trend of LSI interconnection, effective resistivity of Cu/barrier metal interconnect is expected to increase due to increasing electron scattering due to ultrafine dimension smaller than electron mean free path. Therefore, the trend is to substitute Co metal liner for Cu when the line width of LSI interconnect is 10 nm or less. While Chemical Vapor Deposition (CVD) or electrodeposition are discussed as formation method of Co mainly, we introduced electroless deposition (ELD) method. In electroless deposition of Co using Dimethylamine Borane (DMAB), B was incorporated in Co film, and the electric resistivity of the film after heat treatment (400℃ in vacuum, 30 minutes) was 68 µΩ∙cm. In this report, we introduced hydrazine monohydrate as a reducing agent for the purpose of forming ELD pure Co film.ELD Co bath contains cobalt chloride hexahydrate (CoCl2∙6H2O) as metal ion source and hydrazine monohydrate (N2H4∙H2O) as a reducing agent. In addition, some complexing agents were added to prevent Co hydroxide precipitation. Plating bath pH was adjusted to about 12.3 and the CVD-Co film (thickness: 20 nm) on SiO2 and Si was used as substrate for Co deposition. Obtained Co plated film were observed and analyzed by Scanning Electron Microscope (SEM), X-ray Photoelectron Spectroscopy (XPS) and X-Ray Diffraction (XRD). Furthermore, Co plating film was heat-treated at 400℃ in vacuum, and the electrical resistivity of Co film before and after the heat-treatment was measured by four-terminal method.The deposition rate of ELD cobalt bath was about 19 nm/min, and this cobalt film consisted of columnar crystals (Figure 1). If the film surface is rough, it may cause void formation during electroless Co plating in fine via. Regarding the properties of Co film, impurities derived from the reducing agent were not detected from XPS spectral analysis. Co film with few impurities leads to low resistivity because the probability of electron impurity scattering decrease. However, the resistivity of obtained and heat-treated Co film is 53 µΩ∙cm. It is necessary to form the smooth Co film to reduce the electrical resistivity. Figure 1