AbstractWe report a new integration approach to produce arrays of ZnO microcrystals for optoelectronic and photovoltaic applications. Demonstrated applications are n-ZnO/p-GaN heterojunction LEDs and photovoltaic cells. The integration process uses an oxygen plasma treatment in combination with a photoresist pattern on Magnesium doped GaN substrates to define a narrow sub-100nm width nucleation region. ZnO is synthesized in the defined areas by a hydrothermal technique using zinc acetate and hexamethylenetetramine precursors. Nucleation is followed by lateral epitaxial overgrowth producing single crystal disks of ZnO. The process provides control over the dimension and location of the ZnO crystals. The quality of the patterned ZnO is high; the commonly observed defect related emission in the electroluminescence spectra is suppressed and a single near-band-edge UV peak is observed. Transfer printing of the ZnO microcrystals onto a flexible substrate is also demonstrated in the context of transparent flexible electronics.